MA164
Abstract: MA153 2SK1267 SC-59A
Text: 2SK1267 Switching Diodes MA164 Silicon epitaxial planer type 2.8 –0.3 +0.25 1.45 +0.1 2 MA153 type with reverse wiring series connection +0.1 0.16 –0.06 0.8 1.1 –0.1 +0.2 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low
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2SK1267
MA164
MA153
MA164
2SK1267
SC-59A
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Untitled
Abstract: No abstract text available
Text: 2SK1267 Switching Diodes MA164 Silicon epitaxial planer type 2.8 –0.3 +0.25 M Di ain sc te on na tin nc ue e/ d 2 +0.1 0.16 –0.06 0.8 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo
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2SK1267
MA164
MA153
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MA162
Abstract: F056 MA-150 MA150
Text: 2SK1267 Switching Diodes MA150, MA161, MA162, MA162A Silicon epitaxial planer type For switching circuits 1 • Features ● Small capacity between pins, Ct ■ Absolute Maximum Ratings Ta= 25˚C Symbol Rating MA150 Repetitive peak reverse voltage MA161
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2SK1267
MA150,
MA161,
MA162,
MA162A
MA150
MA161
MA162
MA162A
F056
MA-150
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m4l marking
Abstract: No abstract text available
Text: 2SK1267 Switching Diodes MA200A Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 1.45 1 3 +0.1 0.4 –0.05 +0.2 0.65±0.15 0.95 2.9 –0.05 1.9±0.2 of a soft recovery type M Di ain sc te on na tin nc ue e/ d ● trr reverse current IR, with extremely small leakage current
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2SK1267
MA200A
m4l marking
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Untitled
Abstract: No abstract text available
Text: 2SK1267 Switching Diodes MA200A Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 1.45 1 3 +0.1 0.4 –0.05 +0.2 of a soft recovery type 0.65±0.15 0.95 2.9 –0.05 1.9±0.2 ● trr reverse current IR, with extremely small leakage current
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2SK1267
MA200A
O-236
SC-59
100mA
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Untitled
Abstract: No abstract text available
Text: 2SK1267 Power F-MOS FETs 2SK1267 Silicon N-Channel Power F-MOS Unit : mm • Features ON-resistance RDS on : R DS(on)1= 0.07Ω(typ) ■ Applications ● DC-DC converter ● Non-contact ● Solenoid ● Motor 4.0±0.1 4.0±0.1 drive 20.0±0.3 ● Low-voltage
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2SK1267
180ns
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Untitled
Abstract: No abstract text available
Text: 2SK1267 Switching Diodes MA124 Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 +0.25 0.65±0.15 ● Small capacity between pins, Ct 3 0 to 0.05 0.1 to 0.3 0.4±0.2 • Absolute Maximum Ratings Ta= 25˚C Parameter Rating Symbol
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2SK1267
MA124
100mA
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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MN1873287
Abstract: an6512n 2sk3190 MN171202 mn158413 mn15142 mn187164 mn6740 AN7210 MN15283
Text: Maintenance and Discontinued Types <Maintenance Types> Maintenance and Discontinued Types This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Discontinued Types>
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MN101C01C
MN15224
MN101C01D
MN15226
MN101C027
MN15261
MN101C03A
MN101C38A
MN15263
MN101C06D
MN1873287
an6512n
2sk3190
MN171202
mn158413
mn15142
mn187164
mn6740
AN7210
MN15283
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2SK1267
Abstract: SC-65
Text: Power F-MOS FET 2SK1267 2SK1267 Silicon N-channel Power F-MOS FET Package Dimensions • Features • Low ON resistan ce Rds on : R DS (on) 1 = 0 .07ft (typ.) Unit: mm • High switching rate : tf= 180ns (typ.) 1 5 .5 m ax . • No secondary breakdown 13.5max.
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2SK1267
180ns
0D171ba
-25tH
2SK1267
SC-65
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2SK12
Abstract: 2SK1267 SC-65 panasonic 2SC Scans-002934
Text: Power F-MOS FET 2SK1267 2SK12Ó7 Silicon N-channel Power F-MOS FET • Features Package Dimensions • Low ON re sistan c e RDS on : RDS (on) l = 0 .0 7 fl (typ.) • High switching ra te : tf= 180ns (typ.) Unit: mm 15.5max. 13.5max. • No secondary breakdow n
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2SK12Ã
2SK1267
180ns
2SK12
2SK1267
SC-65
panasonic 2SC
Scans-002934
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2SK1267
Abstract: SC-65 D 1169 25
Text: P ow er F-MOS FET 2SK1267 2SK1267 Silicon N-channel Power F-MOS FET Package Dimensions • Features • Low ON resista n ce R » o n : R t>; (on) 1 - 0 .0 7 il (typ.) Unt: mm • High sw itching ra te : ti = 180n s (ty p .) • No secondary breakdown • High breakdown voltage
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2SK1267
180ns
VW-10V.
2SK1267
SC-65
D 1169 25
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OF03
Abstract: 2SK1263 2SK2377
Text: Field Effect Transistors • Power F-MOS FETs Line-up Vgs =10V \ Vdss (V) \ to 60 80 100 150 170 200 250 450 500 550 600 800 900 \ (A) \ 1 A2SK2277 Mini Power 1.0 2SK2014 U Type 10 ★2SK2047 I Type a.o (Id=1.2A) ★2SK1834 220Fro ★2SK1980 N Type 7o ★ A2SK2128
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A2SK2277
2SK2014
2SK2047
2SK1834
220Fro
2SK1980
A2SK2128
A2SK2125
2SK1833
2SK2509
OF03
2SK1263
2SK2377
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2SK1248
Abstract: 2SK1257 2SK124 2SK1250 2SK1241 2SK1249 2sk1259 2SK1243 2SK1244 2SK1245
Text: - 92 - f m. % *± « ffl m E mmi A £ V* h ft* E ft K V * (V) fé I* !xl X ft (A) P d /P c h (W) I g SS (max) (A) Vg s (V) (min) (A) «I (max) V d s (A) (V) 'te & (Ta=25tî) (min) (max) V d s (V) (V) (V) gm (min) (tys) V d s (S) (V) (S) Id (A) 2SK1241
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2SK1241
ZSK1242
2SK1243
-10/i
2SK1244
2SK1245
2SK12230
130ns
190nstyp
2SK1262
2SK1248
2SK1257
2SK124
2SK1250
2SK1241
2SK1249
2sk1259
2SK1244
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2sk2015
Abstract: 2SK2277 2SK2377 2SK1635 2SK2014 2SK2016 2SK1257 2sk1259 2SK1262 2SK2276
Text: Field Effect Transistors • Silicon MOS FETs # For Medium-Output Electrical Characteristics Ta = 2 5 °C Absolute Maximum Ratings (Ta = 2 5 °C) Type No. Application Pch 2SJ0398 2SK2014 2SK2015 Switching Nch 2SK2016 A2SK2211 A2SK2276 A2SK2277 A2SK2342 *1 0 = 2 5 ^
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2SJ0398
2SK2014
2SK2015
2SK2016
A2SK2211
A2SK2276
A2SK2277
A2SK2342
2SK1262
O-220F
2SK2277
2SK2377
2SK1635
2SK1257
2sk1259
2SK2276
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2SK2277
Abstract: 2SK2580 220E4 2SK2015 2SK2014
Text: FET, IGBT, IPD • Power F-MOS FETs Line-up Vgs =10V ÎV dss \ (V) 60 80 100 150 170 250 450 500 550 800 900 (A) \ 1 2SK2277 Mini-Powerl .0 2SK2014 UTypei.O ★2SK2047 I Type b.o (Id =1.2A) 2SK2538 220Fz.o ★2SK1834 220Fro ★2SK1980 N Type 7.0 ★ A2SK2128
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2SK2277
2SK2014
2SK2047
2SK2538
220Fz
2SK1834
220Fro
2SK1980
A2SK2128
220E-0
2SK2580
220E4
2SK2015
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K614
Abstract: K 1833 2SK 129 A gn1015 2SK1257 equivalent 2SK1962 2sk 170 Pin GN1021 IC STK411-220E CIRCUIT K996
Text: Field Effect Trarisistors _ i_ • Silicon Junction FETs Absolute Maximum Ratings Package No. S Mini Type Mini Type (05} Electrical Characteristics (Ta — 25 "C ) (Ta = 25 °C ) Application New S Type TO -92 (D10)
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2SK662
2SK1103
2SJ163
2SK198
2SK374
2SK123
2SK1216
2SK1842
2SJ164
2SK301
K614
K 1833
2SK 129 A
gn1015
2SK1257 equivalent
2SK1962
2sk 170 Pin
GN1021
IC STK411-220E CIRCUIT
K996
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