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    2SJ164 Search Results

    2SJ164 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SJ164 Panasonic Silicon P-Channel Junction FET Original PDF
    2SJ164 Panasonic FETs, IPD, IGBTs, GaAs MMICs Original PDF
    2SJ164 Panasonic P-Channel Junction FET Original PDF
    2SJ164 Unknown FET Data Book Scan PDF
    2SJ164 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SJ164 Panasonic Silicon MOS FETs Scan PDF
    2SJ164O Panasonic TRANS JFET P-CH 1mA 3S Original PDF
    2SJ164P Panasonic TRANS JFET P-CH 1.5mA 3S Original PDF
    2SJ164Q Panasonic TRANS JFET P-CH 3mA 3S Original PDF
    2SJ164R Panasonic TRANS JFET P-CH 6mA 3S Original PDF

    2SJ164 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK1104

    Abstract: 2SJ0164 2SJ164
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0164 (2SJ164) Silicon P-channel junction FET For switching circuits Complementary to 2SK1104 • Package Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b


    Original     		PDF 2002/95/EC) 2SJ0164 2SJ164) 2SK1104 2SK1104 2SJ0164 2SJ164

    2SK1104

    Abstract: 2SJ164 SC-72
    Text: Silicon Junction FETs Small Signal 2SK1104 Silicon N-Channel Junction FET For switching Complementary to 2SJ164 unit: mm 3.0±0.2 4.0±0.2 • Features 15.6±0.5 ● Low ON-resistance ● Low-noise characteristics Ratings Unit Gate to Drain voltage VGDS


    Original     		PDF 2SK1104 2SJ164 SC-72 2SK1104 2SJ164 SC-72

    2SK1104

    Abstract: 2SJ164
    Text: Silicon Junction FETs Small Signal 2SK1104 Silicon N-Channel Junction FET For switching Complementary to 2SJ164 unit: mm 2.0±0.2 (0.8) 3.0±0.2 4.0±0.2 ● Low ON-resistance ● Low-noise characteristics 7.6 • Features 15.6±0.5 ■ Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SK1104 2SJ164 2SK1104 2SJ164

    Untitled

    Abstract: No abstract text available
    Text: Silicon Junction FETs Small Signal 2SK1104 Silicon N-Channel Junction FET For switching Complementary to 2SJ164 unit: mm 2.0±0.2 (0.8) 3.0±0.2 M Di ain sc te on na tin nc ue e/ d 4.0±0.2 ● Low ON-resistance ● Low-noise characteristics 7.6 • Features


    Original     		PDF 2SK1104 2SJ164

    2SK1104

    Abstract: 2SJ164 2sj16
    Text: Silicon Junction FETs Small Signal 2SK1104 Silicon N-Channel Junction FET For switching Complementary to 2SJ164 M Di ain sc te on na tin nc ue e/ d unit: mm 2.0±0.2 ● Low ON-resistance ● Low-noise characteristics 15.6±0.5 • Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SK1104 2SJ164 2SK1104 2SJ164 2sj16

    2SK1104

    Abstract: 2SJ0164 2SJ164
    Text: Silicon Junction FETs Small Signal 2SJ0164 (2SJ164) Silicon P-Channel Junction FET For switching Complementary to 2SK1104 unit: mm 4.0±0.2 (0.8) 3.0±0.2 2.0±0.2 ● Low ON-resistance ● Low-noise characteristics 7.6 • Features 15.6±0.5 ■ Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SJ0164 2SJ164) 2SK1104 2SK1104 2SJ0164 2SJ164

    2SJ0164

    Abstract: 2SJ164 2SK1104
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0164 (2SJ164) Silicon P-channel junction FET For switching circuits Complementary to 2SK1104 • Package Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b


    Original     		PDF 2002/95/EC) 2SJ0164 2SJ164) 2SK1104 2SJ0164 2SJ164 2SK1104

    2SK1104

    Abstract: 2SJ0164 2SJ164
    Text: Silicon Junction FETs Small Signal 2SJ0164 (2SJ164) Silicon P-channel junction FET Unit: mm 2.0±0.2 4.0±0.2 (0.8) 3.0±0.2 For switching circuits Complementary to 2SK1104 (0.8) 0.75 max. • Features 15.6±0.5 • Low ON resistance • Low-noise characteristics


    Original     		PDF 2SJ0164 2SJ164) 2SK1104 2SK1104 2SJ0164 2SJ164

    Untitled

    Abstract: No abstract text available
    Text: 2SK1104 Silicon Junction FETs Small Signal 2SK1104 Silicon N-Channel Junction Unit : mm For switching Complementary with 2SJ164 3.0±0.2 4.0±0.2 Low-noise characteristics marking 1 2 3 2.0±0.2 ● 0.7±0.1 Low ON-resistance +0.2 0.45–0.1 ● 15.6±0.5


    Original     		PDF 2SK1104 2SJ164

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0164 (2SJ164) Silicon P-channel junction FET For switching circuits Complementary to 2SK1104 • Package ■ Features • Code NS-A1 • Pin Name • Low ON resistance


    Original     		PDF 2002/95/EC) 2SJ0164 2SJ164) 2SK1104

    Junction-FET

    Abstract: 2SJ164 2SK1104 SC-72
    Text: Silicon Junction FETs Small Signal 2SJ164 Silicon P-Channel Junction FET For switching Complementary to 2SK1104 unit: mm 3.0±0.2 4.0±0.2 • Features 15.6±0.5 ● Low ON-resistance ● Low-noise characteristics Ratings Unit Gate to Drain voltage VGDS


    Original     		PDF 2SJ164 2SK1104 SC-72 Junction-FET 2SJ164 2SK1104 SC-72

    2SJ0164

    Abstract: 2SJ164 2SK1104
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0164 (2SJ164) Silicon P-channel junction FET M Di ain sc te on na tin nc ue e/ d For switching circuits Complementary to 2SK1104 ue pl d in an c se ed lud


    Original     		PDF 2002/95/EC) 2SJ0164 2SJ164) 2SK1104 2SJ0164 2SJ164 2SK1104

    2SK1104

    Abstract: 2SJ164 SC-72 2SK110
    Text: Silicon Junction FETs Small Signal 2SK1104 Silicon N-Channel Junction FET For switching Complementary to 2SJ164 unit: mm 3.0±0.2 4.0±0.2 • Features 15.6±0.5 ● Low ON-resistance ● Low-noise characteristics Ratings Unit Gate to Drain voltage VGDS


    Original     		PDF 2SK1104 2SJ164 SC-72 2SK1104 2SJ164 SC-72 2SK110

    2SK1104

    Abstract: 2SJ0164 2SJ164 SC-72
    Text: Silicon Junction FETs Small Signal 2SJ0164 (2SJ164) Silicon P-Channel Junction FET For switching Complementary to 2SK1104 unit: mm 3.0±0.2 4.0±0.2 • Features 15.6±0.5 ● Low ON-resistance ● Low-noise characteristics Ratings Unit Gate to Drain voltage


    Original     		PDF 2SJ0164 2SJ164) 2SK1104 SC-72 2SK1104 2SJ0164 2SJ164 SC-72

    Untitled

    Abstract: No abstract text available
    Text: Silicon Junction FETs Small Signal 2SK1104 Silicon N-Channel Junction FET For switching Complementary to 2SJ164 unit: mm 4.0±0.2 (0.8) 3.0±0.2 2.0±0.2 ● Low ON-resistance ● Low-noise characteristics 7.6 M Di ain sc te on na tin nc ue e/ d • Features


    Original     		PDF 2SK1104 2SJ164

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0164 (2SJ164) Silicon P-channel junction FET M Di ain sc te on na tin nc ue e/ d For switching circuits Complementary to 2SK1104 • Package ■ Features


    Original     		PDF 2002/95/EC) 2SJ0164 2SJ164) 2SK1104

    2sj111

    Abstract: 2SJ131 2sj110 2SJ112 2sj155 2SJ124 transistor 2sj162 2SJ109 2SJ113 2SJ122
    Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) ID Pd/Pch Tj/Tch min 2SJ101 2SJ102 2SJ103 2SJ104 2SJ105 2SJ106 2SJ107 2SJ108 2SJ109 2SJ110 2SJ111 2SJ112 2SJ113 2SJ114 2SJ115 2SJ116 2SJ117 2SJ118


    Original     		PDF 2SJ101 2SJ102 2SJ103 2SJ104 2SJ105 2SJ106 2SJ107 2SJ108 2SJ109 2SJ110 2sj111 2SJ131 2sj110 2SJ112 2sj155 2SJ124 transistor 2sj162 2SJ109 2SJ113 2SJ122

    2SK3585

    Abstract: Infrared-Sensor 2SK3578 2SK3584 2sk0301 2SK3583 PUB4701 2SK1104 2SK1860 2SK3585 equivalent
    Text: FETs, IPD, IGBTs, GaAs MMICs • Power Transistor Arrays F-MOS FETs Application Part No. Non-contact solenoid drive. Motor drive. Control equipment switching equipment. ✽: Ta=25 °C PUB4753 (PU7457) PUB4701 PUB4702 Absolute Maximum Ratings (TC = 25 °C)


    Original     		PDF PUB4753 PU7457) PUB4701 PUB4702 450/600o 380/680o SIP10-A1 2SK0301 2SK663) 2SK301) 2SK3585 Infrared-Sensor 2SK3578 2SK3584 2SK3583 PUB4701 2SK1104 2SK1860 2SK3585 equivalent

    2SK1216

    Abstract: 3SK139 2SJ364 FETs Field Effect Transistors 3SK268 3SK269 3SK192 2SK1104 2SK374 3SK286
    Text: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta =25 “CÍ Package (No. Application General-use low frequency amplifier SS Mini Type S Mini Type (D1) (D5) 2SJ0385 Mini Type (D10) 2SK198 2SK374 2SK123 Capacitor microphone APreliminary


    OCR Scan     		PDF 2SJ0385 2SJ364 2SK1103 2SJ163 2SK1104 2SJ164 2SK662 2SK663 2SK198 2SK374 2SK1216 3SK139 FETs Field Effect Transistors 3SK268 3SK269 3SK192 2SK374 3SK286

    3866S

    Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
    Text: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series


    OCR Scan     		PDF 1020G N12861 N12B62 MN1381 MN13811 MN13821 15P0802 15P5402 58851A 70803A 3866S transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515

    2SK620

    Abstract: 3SK268 3SK269 2SK1104 3SK286 CAMERA MOS 2SJ0385 2SJ163 2SJ164 2SJ364
    Text: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta=25“C Package (No.) Application Mini Type (D10) SS Mini Type S Mini Type (D 1) General-use low frequency amplifier (D 5) New S Type (D39) 2 SKIIO 3 2SJ0385 2SJ364 2SK662 2SK663


    OCR Scan     		PDF 2SJ0385 2SJ364 2SK1103 2SJ163 2SK1104 2SJ164 2SK662 2SK663 2SK198 2SK374 2SK620 3SK268 3SK269 3SK286 CAMERA MOS 2SJ164

    Untitled

    Abstract: No abstract text available
    Text: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta Package (No. Application (D1) General-use low frequency amplifier 2SJ0385 General-use Capacitor microphone Video camera pre-amp. Infrared sensor A2SK2380 APrelim inary Mini Type


    OCR Scan     		PDF 2SJ0385 A2SK2380 2SK1103 2SJ364 2SJ163 2SK662 2SK198 2SK663 2SK374 2SK123

    3SK192

    Abstract: 2SK651
    Text: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Electrical Characteristics Ta =25 °C (Ta = 2 5 “C) Package (No.) Application SS Mini Type S Mini Type (D5) (D1) Mini Type (D12) New S Type (D34) TO-92 (D46) V dso * V gds (V )


    OCR Scan     		PDF 2SK2380 2SJ0385 2SJ364 2SK662 2SK663 2SK1103 2SJ163 2SK198 2SK374 2SK123 3SK192 2SK651

    ic501

    Abstract: RVD1SS133TA RVSGP2S24BC XLJ93LC46A 2SD2374PQAU MA165TA KSD471ACYGTA an7357fb AN7356SC-E2 mtzj6r2bta
    Text: O RDER NO. AD9510251S5 A2 Service Manual Cassette Deck Dolby NR-Equipped Stereo Double Cassette Deck RS-TR474 Colour D O L B Y B «C N R H X P R O <K .Black Type Area Suffix for Model No. * Dolby noise reduction and HX Pro headroom extension m anufactured under license from Dolby Laboratories


    OCR Scan     		PDF AD9510251S5 RS-TR474 RS-TR474, AD9401007C5. No111TX MA112TX MA8056MTX MA152WATX LN28RPX ic501 RVD1SS133TA RVSGP2S24BC XLJ93LC46A 2SD2374PQAU MA165TA KSD471ACYGTA an7357fb AN7356SC-E2 mtzj6r2bta