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    2SD600 Search Results

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    2SD600 Price and Stock

    Crydom Inc F1892SD600

    MODULE SCR/DIODE 90A 240VAC
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    TME F1892SD600 1
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    Samtec Inc EW-01-12-S-D-600

    CONN HDR 2POS STACK T/H GOLD
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    Samtec Inc DW-08-12-S-D-600

    CONN HDR 16POS 0.1 STACK T/H
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    Samtec Inc DW-09-12-S-D-600

    CONN HDR 18POS 0.1 STACK T/H
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    Powell Electronics DW-09-12-S-D-600 487 1
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    Samtec Inc ZSS-115-02-S-D-600

    CONN HDR .100" 30POS
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    2SD600 Datasheets (27)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SD600 Sanyo Semiconductor 100V/120V, 1A Low-Frequency Power Amp Applications Original PDF
    2SD600 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD600 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SD600 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SD600 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD600 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD600 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD600 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SD600 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD600 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD600 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD600 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD600 Unknown Cross Reference Datasheet Scan PDF
    2SD600 Sanyo Semiconductor PNP/NPN Epitaxial Planar Silicon Transistors 100V/120V, 1A Scan PDF
    2SD600 Sanyo Semiconductor Sanyo Datasheets, Cross References and Circuit Examples Scan PDF
    2SD600E Sanyo Semiconductor PNP/NPN Epitaxial Planar Silicon Transistors 100V/120V, 1A Scan PDF
    2SD600K Sanyo Semiconductor NPN Epitaxial Planar Silicon Transistor 100V-120V, Original PDF
    2SD600K Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD600K Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD600K Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    2SD600 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB631

    Abstract: 2SB631K
    Text: JMnic Product Specification 2SB631 2SB631K Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SD600/K ・High breakdown voltage VCEO:-100/-120V ・High current: -1A ・Low saturation voltage,excellent hFE linearity


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    PDF 2SB631 2SB631K O-126 2SD600/K -100/-120V 2SB631 -50mA 2SB631K

    2SD600K

    Abstract: 2sd600* transistor Spice Parameter, Bipolar Transistor
    Text: 2SD600K SPICE PARAMETER NPN Bipolar Transistor model : Gummel-Poon Parameter Value IS 210.0f NF 1 IKF 500.0m NE 2 NR 1 IKR 240.0m NC 2 IRB 20.00m RE 125.0m XTB XTI 3 VJE 680.0m TF 1.5n VTF 100 PTF VJC 500.0m XCJC 1 FC 500.0m AF 1 Temp = Date : Unit A A A A


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    PDF 2SD600K 2SD600K 2sd600* transistor Spice Parameter, Bipolar Transistor

    transistor D600k

    Abstract: transistor d600 D600K D600k transistor transistor b631 b631k b631 transistor 2SB631 transistor B631K k b631k
    Text: Ordering number:ENN346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions • High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.


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    PDF ENN346G 2SB631 631K/2SD600 00V/120V, 100/120V, 2009B 2SB631, 631K/2SD600, O-126 transistor D600k transistor d600 D600K D600k transistor transistor b631 b631k b631 transistor transistor B631K k b631k

    2sb631 transistor

    Abstract: 2sd600* transistor 2SB631 2SD600 high gain low voltage PNP transistor transistor 2sb631 transistor PNP 10A
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB631 DESCRIPTION •High Collector Current-IC=-1.0A ·High Collector-Emitter Breakdown Voltage: V BR CEO=-100V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SD600


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    PDF 2SB631 -100V 2SD600 -50mA -500mA 2sb631 transistor 2sd600* transistor 2SB631 2SD600 high gain low voltage PNP transistor transistor 2sb631 transistor PNP 10A

    2SB631K

    Abstract: 2SD600K
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB631K DESCRIPTION •High Collector Current-IC=-1.0A ·High Collector-Emitter Breakdown Voltage: V BR CEO=-120V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SD600K


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    PDF 2SB631K -120V 2SD600K -500mA; -50mA -500mA 2SB631K 2SD600K

    2sb631

    Abstract: 2sb631k
    Text: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB631 2SB631K DESCRIPTION •With TO-126 package ·Complement to type 2SD600/K ·High breakdown voltage VCEO:-100/-120V ·High current: -1A ·Low saturation voltage,excellent hFE linearity


    Original
    PDF 2SB631 2SB631K O-126 2SD600/K -100/-120V 2SB631 -50mA 2sb631k

    2SB631K

    Abstract: D 600K
    Text: Ordering number : ENN346G 2SB631, 631K/ 2SD600, 600K PNP/NPN Epitaxial Planar Silicon Transistors 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions • High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.


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    PDF ENN346G 2SB631, 631K/ 2SD600, 00V/120V, 100/120V, 2009B 631K/2SD600, O-126 2SB631K D 600K

    transistor D600k

    Abstract: transistor d600 transistor b631 D600k transistor transistor B631K D600K b631 transistor B631K 2SB631 D600
    Text: Ordering number:346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions • High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.


    Original
    PDF 2SB631 631K/2SD600 00V/120V, 100/120V, 2009B 2SB631, 631K/2SD600, O-126 transistor D600k transistor d600 transistor b631 D600k transistor transistor B631K D600K b631 transistor B631K D600

    2sb631 transistor

    Abstract: transistor b631 transistor D600k 2sb631 2sd600
    Text: Ordering number:ENN346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions • High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.


    Original
    PDF ENN346G 2SB631 631K/2SD600 00V/120V, 100/120V, 2009B 2SB631, 631K/2SD600, O-126 2sb631 transistor transistor b631 transistor D600k 2sd600

    D600K

    Abstract: 631k B631K 2SD600 D600K to 126 2SB631 2SB631K N346G TO-126 D600 D600
    Text: 注文コード No. N 3 4 6 G 2SB631, 631K / 2SD600, 600K N346G 41400 半導体ニューズ No.346E(’ 91 大信号トランジスタ D.B.Vol.1 No.346F)とさしかえてください。 2SB631, 631K 2SD600, 600K 特長 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ


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    PDF 2SB631, 2SD600, N346G 2SB631K, D600K B631K, D600K 631k B631K 2SD600 D600K to 126 2SB631 2SB631K N346G TO-126 D600 D600

    2SD600

    Abstract: 2sd600* transistor hFE is transistor 2sd600 transistor 2SB631 2sb631 transistor
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD600 DESCRIPTION •High Collector Current-IC= 1.0A ·High Collector-Emitter Breakdown Voltage: V BR CEO= 100V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SB631


    Original
    PDF 2SD600 2SB631 500mA 2SD600 2sd600* transistor hFE is transistor 2sd600 transistor 2SB631 2sb631 transistor

    2SD600

    Abstract: 2sd600k
    Text: Inchange Semiconductor Product Specification 2SD600 2SD600K Silicon NPN Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SB631/631K ·High breakdown voltage VCEO100/120V ·High current 1A ·Low saturation voltage APPLICATIONS ·For low-frequency power amplifier


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    PDF 2SD600 2SD600K O-126 2SB631/631K VCEO100/120V 2SD600 500mA 2sd600k

    2SB631

    Abstract: 2SB631K
    Text: Inchange Semiconductor Product Specification 2SB631 2SB631K Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SD600/K ・High breakdown voltage VCEO:-100/-120V ・High current: -1A ・Low saturation voltage,excellent hFE linearity


    Original
    PDF 2SB631 2SB631K O-126 2SD600/K -100/-120V 2SB631 -500mA -50mA 2SB631K

    2SD600

    Abstract: 2SD600K 2sd_600 to126 2sd600k
    Text: SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD600 2SD600K DESCRIPTION •With TO-126 package ·Complement to type 2SB631/631K ·High breakdown voltage VCEO100/120V ·High current 1A ·Low saturation voltage APPLICATIONS ·For low-frequency power amplifier


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    PDF 2SD600 2SD600K O-126 2SB631/631K VCEO100/120V 2SD600 500mA 2SD600K 2sd_600 to126 2sd600k

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    2SD588

    Abstract: 2SB651 2SB669A 2SB618A 2SB641 2SB615 2Sb669 2SD588A 2SB618 2SB616 2SD586
    Text: Absolutes maximum ratings Ta=25ºC DC Current Gain fab/ft* Cob ºñ°í hFE VCE Ic (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 30W 2000-5A 150 -2 -3A 2SD560 (Tc=25ºC) 15000 -500 800 175 >50 -5 -100 30W -4A 150 120 -5 -500 (Tc=25ºC) -700 800 150 200 -1 -100 120*


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    PDF 000-5A 2SD560 2SD571 15kHz 2SD586 2SD718 2SD726 2SD727 2SD728 2SD731 2SD588 2SB651 2SB669A 2SB618A 2SB641 2SB615 2Sb669 2SD588A 2SB618 2SB616 2SD586

    2SC1565

    Abstract: 2sD1392 2SC3469 2SD1431 2SC495 2SC2824 2SD1388 2SD600 2SD1876 2SD1499
    Text: - M € T y p e No. tt it 2SD 1377K eh ft 2SD 1377 - 2SD 13 7 8 □— A 2SD 1 379 € Manuf. m h SANYO 2 TOSHIBA 2SC1212A 2SD549 2SD1520L/S 2SC2877 2SD 1381 - □ —A 2SD600 2SC2824 2SD 1382 — □ —A 2SD600 2SC2824 2SD 1383 s. □ —A □ —A 2SD1207


    OCR Scan
    PDF 2SD1196 2SD633 2SD1634 2SD2024 1377K 2SD1024 2SD600 2SC495 2SC1212A 2SD946 2SC1565 2sD1392 2SC3469 2SD1431 2SC495 2SC2824 2SD1388 2SD1876 2SD1499

    2SC783

    Abstract: 2SC2290 2SC3421 2SC1174 2SC1275 2SD1577 2SC1175 2sc 1177 2SC1167 2SC2329
    Text: % T ype No. tt B £ Manuf. SANYO TOSHIBA m NEC B ±L HITACHI Ä ± Ä F U JIT S U tö T MATSUSHITA h m M IT SU B IS H I □ — A ROHM * 2SC 1153 * 2SC 1154 ~ X * 2SC 1155 E. # 2SD600 2SC3421 2SD1378 * 2S0 1156 EL g 2SD6Ü0 2SC3421 2SD1378 * 2SC 1157 H 2SC3421


    OCR Scan
    PDF 2SD819 2SD600 2SC3421 2SD1378 2SD137S 2SD1563 2SC783 2SC2290 2SC3421 2SC1174 2SC1275 2SD1577 2SC1175 2sc 1177 2SC1167 2SC2329

    D600K

    Abstract: B631k b631 k b631k D600K to 126 2SB631 TO-126 D600 d600 2SB6 2Sd600
    Text: Ordering num ber: EN346G 2SB631,631K/2SD600,600K PNP/NPN Epitaxial Planar Silicon Transistors SANYO 100V/120V, 1A Low-Frequency Power Amp Applications i F e a tu re s • High breakdown voltage V ceo 100/120V, High current 1A. •Low saturation voltage, excellent hpE linearity.


    OCR Scan
    PDF EN346G 2SB631 631K/2SD600 00V/120V, 100/120V, 2SB631, 2SB631K, D600K 2SD60 D600K B631k b631 k b631k D600K to 126 TO-126 D600 d600 2SB6 2Sd600

    D600K

    Abstract: B631K PNP 2SD 2SB631 631k D600K to 126
    Text: Ordering number:EN34SG 2SB631,631K/2SD600,600K PNP/NPN Epitaxial Planar Silicon Transistors 100V/120V, 1A Low-Frequency Power Amp Applications F e a tu re s • High breakdown voltage Vceo 100/120V, High current 1A. • Low saturation voltage, excellent hpE linearity.


    OCR Scan
    PDF EN34SG 2SB631 631K/2SD600 00V/120V, 100/120V, 2SB631, 2SB631K, D600K B631K, D600K B631K PNP 2SD 631k D600K to 126

    transistor 2SB1142

    Abstract: sanyo transistor tt series 2SB612K 2SB1143 2SA1750 2sc3788
    Text: SA0YO M IC A LE SS T 0-126M L T R A N SIST O R S F e a t u r e s ♦ Reduced cost and man-hour because of no insulator required for mounting ♦ Plastic-covered heat sink facilitating high-density mounting ♦ Increased collector dissipation when a transistor alone is operated


    OCR Scan
    PDF 0-126M T0-126ML) T0-126ML O-126 MT950123TR transistor 2SB1142 sanyo transistor tt series 2SB612K 2SB1143 2SA1750 2sc3788

    2SD977

    Abstract: 2SD600K 2sc2233 2sc2373 2SD849 2SD1953 2SD763 ROHM 1004 nec 2sd560 2SD1162
    Text: 228 - s « « tt Manuf. Type No. 2SD 973 -s-virv fc' T 2SD 973A K T 2SD 974 B ÎL tt y 2SD 972 2SD H ï¥ SANYO JÜ ^ TOSHIBA Vy>TV 2SD 971 CD - 975> 2SD 976 g fr 2SD 976A B ÎL 2SD 977 E. & 2SD 978 H H & 2S0 979 2SD1190 a m NEC B ÎL H ITACH I 2SD1162 2SD 11 1 4 K


    OCR Scan
    PDF 2SD971 2SD972 2SD973 2SD973A 2SD974 2SD560 2SD1162 2SD76800 2SD1190 2SD863 2SD977 2SD600K 2sc2233 2sc2373 2SD849 2SD1953 2SD763 ROHM 1004 nec 2sd560 2SD1162

    2S0880

    Abstract: 2SD427 SD 338 2Sd428 2sc790 2sd880 2SD313 2SD2023 2SC2320 2SC1815
    Text: - 212 - M € T ype No. *t 2S0 330 ' = $ * 2SD 331 ✓ = m * 2SD 334 ✓ te T * 2SD 335 ^ m * 2SD 336 m ¿ni * 2SD 338 * 2SD 339 ^ * * * 2S0 340 * - 2SD 341 2SD 342 SANYO 3C 2 TOSHIBA 2SD313 2SC79Û L B € Manuf. 2SC790 NEC 2SD795 Ä HITACHI 3 ± F U JIT S U


    OCR Scan
    PDF 2SC790 2SD795 2SD1135 2SD389 2SD2023 2SD313 2SC79Ã 2SD390 2S0880 2SD427 SD 338 2Sd428 2sd880 2SD2023 2SC2320 2SC1815

    RTIP144C

    Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
    Text: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.


    OCR Scan
    PDF 2SB1186 2SB1186A 2SA1304 2SA1306 2SA1305 2SB1274 2SB1015 2SB1133 2SB1287 2SB1185 RTIP144C RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C