Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SD1221 Search Results

    SF Impression Pixel

    2SD1221 Price and Stock

    Toshiba America Electronic Components 2SD1221-Y(Q)

    TRANS NPN 60V 3A PW-MOLD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SD1221-Y(Q) Bulk 200
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.5875
    • 10000 $0.5875
    		Buy Now

    Toshiba America Electronic Components 2SD1221

    Our Stock
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Velocity Electronics 2SD1221 135
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    2SD1221 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SD1221 Toshiba NPN Transistor Original PDF
    2SD1221 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1221 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1221 Unknown Scan PDF
    2SD1221 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1221 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1221 Unknown Cross Reference Datasheet Scan PDF
    2SD1221 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SD1221 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SD1221 Toshiba Silicon NPN transistor for audio frequency power amplifier applications Scan PDF
    2SD1221 Toshiba Silicon NPN Triple Diffused Type Transistor Scan PDF
    2SD1221-Y(Q) Toshiba Transistors (BJT) - Single, Discrete Semiconductor Products, TRANSISTOR NPN 60V 3A PW MOLD Original PDF

    2SD1221 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    B906

    Abstract: 2SB906 2SD1221
    Text: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 Unit: mm : VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A)


    Original     		PDF 2SB906 2SD1221 B906 2SB906 2SD1221

    transistor B906

    Abstract: 2SB906 7B1A B-906 B906 2SD1221
    Text: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 • ハイブリッド対応外形の (B) 2SB906 (LB) もあります。


    Original     		PDF 2SB906 2SD1221 transistor B906 2SB906 7B1A B-906 B906 2SD1221

    transistor B906

    Abstract: B906 2SB906 2SD1221 B-906
    Text: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 Unit: mm : VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A)


    Original     		PDF 2SB906 2SD1221 transistor B906 B906 2SB906 2SD1221 B-906

    D1221

    Abstract: 2SD1221 2SB906
    Text: 2SD1221 東芝トランジスタ シリコンNPN三重拡散形 PCT方式 2SD1221 ○ 低周波電力増幅用 単位: mm • 飽和電圧が低い。 • コレクタ損失が大きい。 : PC = 20 W (Tc = 25°C) • 2SB906 とコンプリメンタリになります。


    Original     		PDF 2SD1221 2SB906 20070701-JA D1221 2SD1221 2SB906

    Untitled

    Abstract: No abstract text available
    Text: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 Unit: mm : VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A)


    Original     		PDF 2SB906 2SD1221

    2SB906

    Abstract: 2SD1221 D1221
    Text: 2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type PCT Process 2SD1221 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SB906 Unit: mm : VCE (sat) = 0.4 V (typ.) (IC = 3 A, IB = 0.3 A)


    Original     		PDF 2SD1221 2SB906 2SB906 2SD1221 D1221

    2SB906

    Abstract: 2SD1221 B906
    Text: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 Unit: mm : VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A)


    Original     		PDF 2SB906 2SD1221 2SB906 2SD1221 B906

    D1221

    Abstract: 2SB906 2SD1221
    Text: 2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type PCT process 2SD1221 Audio Frequency Power Amplifier Application • Low collector saturation voltage · High power dissipation: PC = 20 W (Tc = 25°C) · Complementary to 2SB906 Unit: mm : VCE (sat) = 4.0 V (typ.) (IC = 3 A, IB = 0.3 A)


    Original     		PDF 2SD1221 2SB906 D1221 2SB906 2SD1221

    Untitled

    Abstract: No abstract text available
    Text: 2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type PCT Process 2SD1221 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SB906 Unit: mm : VCE (sat) = 4.0 V (typ.) (IC = 3 A, IB = 0.3 A)


    Original     		PDF 2SD1221 2SB906

    2sd1221 toshiba

    Abstract: D1221 2SB906 2SD1221
    Text: 2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type PCT Process 2SD1221 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SB906 Unit: mm : VCE (sat) = 4.0 V (typ.) (IC = 3 A, IB = 0.3 A)


    Original     		PDF 2SD1221 2SB906 2sd1221 toshiba D1221 2SB906 2SD1221

    B906

    Abstract: 2SB906 2SD1221
    Text: 2SB906 東芝トランジスタ シリコンPNP三重拡散形 PCT方式 2SB906 ○ 低周波電力増幅用 • 単位: mm 飽和電圧が低い。 : VCE (sat) = −1.0 V (標準) (IC = −3 A, IB = −0.3 A) • コレクタ損失が大きい。 • 2SD1221 とコンプリメンタリになります。


    Original     		PDF 2SB906 2SD1221 20070701-JA B906 2SB906 2SD1221

    Untitled

    Abstract: No abstract text available
    Text: 2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type PCT Process 2SD1221 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SB906 Unit: mm : VCE (sat) = 4.0 V (typ.) (IC = 3 A, IB = 0.3 A)


    Original     		PDF 2SD1221 2SB906

    B906

    Abstract: 2SB906 2SD1221
    Text: 2SB906 東芝トランジスタ シリコンPNP三重拡散形 PCT方式 2SB906 ○ 低周波電力増幅用 • 単位: mm 飽和電圧が低い。 : VCE (sat) = −1.0 V (標準) (IC = −3 A, IB = −0.3 A) • コレクタ損失が大きい。 • 2SD1221 とコンプリメンタリになります。


    Original     		PDF 2SB906 2SD1221 B906 2SB906 2SD1221

    transistor

    Abstract: power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220
    Text: Part Number 2SD1160 N 2SD1140 N 2SD1224 N 2SD1508 N 2SD1631 N 2SD1784 Y 2SD2481 N 2SB907 N 2SD1222 N 2SD1412A 2SD2686 * 2SD1658 N 2SD2088 N 2SD2352 N 2SD2461 N 2SB906 N 2SD1221 N 2SB1375 N 2SD2012 N 2SD2462 N 2SB1640 N 2SD2525 N 2SD2353 N 2SB1667 Y 2SB1642 N


    Original     		PDF 2SD1160 2SD1140 2SD1224 2SD1508 2SD1631 2SD1784 2SD2481 2SB907 2SD1222 2SD1412A transistor power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1221 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION. Unit in mm FEATURES: . Low Collector Saturation Voltage : VcE sat =0.4V(Typ.) (Ic=3A, Ib =0.3A) . High Power Dissipation : Pc=20W (Tc=25°C) . Complementary to 2SB906 MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		PDF 2SD1221 2SB906 2SD122

    2SB906

    Abstract: 2SD1221
    Text: TO SH IB A 2SD1221 T O S H IB A T RA N SIST O R SILICON NPN TRIPLE D IFFUSED T Y PE PCT PRO CESS 2 S D 1 221 A U D IO FR EQ U EN C Y P O W E R A M P L IF IE R A PPLIC A TIO N • U n it in mm Low Collector S aturation V oltage : V CE (sat) = °-4 v (TyP-)


    OCR Scan     		PDF 2SD1221 ce-30 2SB906 2SD1221

    Untitled

    Abstract: No abstract text available
    Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SB906 Unit in inm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION. 68MAX. FEATURES : . Low Collector Saturation Voltage : V C E sat =-1.0V(Typ.) (Ic— 3A, IB =-0.3A) 5.2±0.2 j . High Power Dissipation : Pç=20W (Tc-25°C) . Complementary to 2SD1221


    OCR Scan     		PDF 2SB906 68MAX. Tc-25 2SD1221 -50mA,

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SD1221 2 S D 1 221 T O SH IB A TRA NSISTO R SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm A U D IO FREQUENCY P O W ER AM PLIFIER A PPLICATIO N • • • Low Collector Saturation Voltage : v CE(sat) = °-4V (TyP-> High Power Dissipation : P0 = 20 W


    OCR Scan     		PDF 2SD1221 2SB906

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SD1221 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2 S D 1 221 AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATION U nit in mm 6.8MAX. (A) • 5.2 Low Collector Saturation Voltage ±0.2 c J : V CE (sat) = °-4 v (Typ.) • High Power Dissipation : P q = 20 W


    OCR Scan     		PDF 2SD1221 2SB906

    2SD1221

    Abstract: 2sd1221 toshiba 2SB906
    Text: 2SD1221 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2 S D 1 221 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • Unit in mm Low Collector Saturation Voltage : VCE (sat) - °-4 v (Typ.) High Power Dissipation : Pg = 20 W


    OCR Scan     		PDF 2SD1221 2SB906 2SD1221 2sd1221 toshiba

    2SB906

    Abstract: 2SD1221 2sd1221 toshiba
    Text: TO SHIBA 2SD1221 2 S D 1 221 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATION. • Low Collector Saturation Voltage : v CE(sat) = °-4V (TyP-) High Power Dissipation : P0 = 2OW Complementary to 2SB906


    OCR Scan     		PDF 2SD1221 2SB906 2SD1221 2sd1221 toshiba

    V30010

    Abstract: 20W power transistor
    Text: TOSHIBA 2SD1221 ^Transistor Silicon NPN Triple Diffused Type PCT Process Audio Frequency Power Amplifier Applications F e a tu re s • Low Collector Saturation Voltage - ^CE (Satj = 0.4V (Typ.) (Iq = 3A, lB = 0.3A) • High Power Dissipation - Pc = 20W (Tc = 25~C )


    OCR Scan     		PDF 2SD1221 2SB906 150LLECTOR-EMITTER V30010 20W power transistor

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SD1221 2 S D 1 221 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATION. • • • (A) Low Collector Saturation Voltage : v CE(sat) = °-4V (TyP-) High Power Dissipation : P q = 20W


    OCR Scan     		PDF 2SD1221 2SB906 95MAX --50mA,

    IC 933

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS -2SD1221 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION. 6 8 max . FEATURES: 5 O ci . Low Collector Saturation Voltage : VCE(sat)=0.4V(Typ.) (IC=3A, IB=0.3A) j . High Power Dissipation : Pc=20W (Tc=25°C)


    OCR Scan     		PDF -2SD1221 2SB906 Ta-25 2SD1221 50X50X08mt IC 933