2SC594 Search Results

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

Contextual Info: Reliability Tests Report Product Name: 2SC5948 Package Name: TO-3P N 1. Thermal tests Test Item Heat resistance (Flow) Heat resistance (Iron) Temperature cycling - Test Condition Peak : 260 deg.C Immersion time : 10 s (Up to 1.5mm from the Root shall be immersed)

Contextual Info: 2SA2121 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2121 Power Amplifier Applications Unit: mm Complementary to 2SC5949 Recommended for audio frequency amplifier output stage. Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit

Contextual Info: 2SC5945 Si NPN Epitaxial High Frequency Medium Power Amplifier REJ03G0443-0200 Rev.2.00 Jan 27, 2006 Features • Excellent Linearity P1dB at output = +26 dBm typ. f = 2.4 GHz • High Collector to Emitter Voltage VCEO = 5 V • Ideal for 2 GHz Band applications. e.g 2.4 GHz WLAN, Digital cordless phone.

Contextual Info: 2SA2121 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2121 Power Amplifier Applications Unit: mm PC = 220W Complementary to 2SC5949 Maximum Ratings Tc = 25°C Characteristic Symbol Rating Unit Collector-base voltage VCBO −200 V Collector-emitter voltage

2SA2120

Abstract: 2SC5948 a2120 2SA21
Contextual Info: 2SA2120 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2120 Power Amplifier Applications Unit: mm • Complementary to 2SC5948 • Recommended for audio frequency amplifier output stage. Absolute Maximum Ratings Tc = 25°C Characteristic Symbol Rating

2SC5946

Abstract: 2SC5946G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5946G Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing • Package ■ Features • Code SSSMini3-F2 • Marking Symbol: 9N • Pin Name 1: Base

Contextual Info: 2SA2120 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2120 Power Amplifier Applications Unit: mm • Complementary to 2SC5948 • Recommended for audio frequency amplifier output stage. Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating

2sc5949

Abstract: 2-21F1A 2SA2121
Contextual Info: 2SC5949 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5949 Power Amplifier Applications • PC = 220W • Complementary to 2SA2121 Unit: mm Maximum Ratings Tc = 25°C Characteristic Symbol Rating Unit Collector-base voltage VCBO 200 V Collector-emitter voltage

2SC5946G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5946G Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing • Package ■ Features • High transition frequency fT • SSS-Mini type package, allowing downsizing of the equipment

ZO 607 MA

Abstract: 149-5 zo 607 150-1 2SC5945
Contextual Info: 2SC5945 Si NPN Epitaxial High Frequency Medium Power Amplifier REJ03G0443-0100 Rev.1.00 Oct.28.2004 Features • Excellent Linearity P1dB at output = +26 dBm typ. f = 2.4 GHz • High Collector to Emitter Voltage VCEO = 5 V • Ideal for 2 GHz Band applications. e.g 2.4 GHz WLAN, Digital cordless phone.

2SC108A

Abstract: 2SC109A 2SA503 2SC524 2SB678 2SC512 2sc497
Contextual Info: TO-39 PACKAGE S ER IES TOSHIBA 16 TO-39 { D I S CRETE/OPT0> Application •c T vdb No. NPN High Voltage SW 2SC507 High Frequency Amp. 2SC594 High Voltage SW 2SC506 PNP v CEO hF E PC fX T Y P . v CE(sat) M A X . Ta=2E?C *Tc=2d>C V CE •c •c • b (V) (A)

2SC5948

Abstract: 2SA2120 A2120
Contextual Info: 2SA2120 東芝トランジスタ シリコンPNP三重拡散形 2SA2120 ○ 電力増幅用 単位: mm • 2SC5948 とコンプリメンタリになります。 • オーディオアンプ出力段に最適です。 絶対最大定格 Tc = 25°C 項 目

2sc5949

Abstract: 2SA2121 2-21F1A
Contextual Info: 2SC5949 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5949 Power Amplifier Applications Unit: mm • Complementary to 2SA2121 • Recommended for audio frequency amplifier output stage. Absolute Maximum Ratings Tc = 25°C Characteristic Symbol Rating

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5946 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing Unit: mm 0.33+0.05 –0.02 • Features 0.10+0.05 –0.02 5˚ 1.20±0.05 0.80±0.05 • High transition frequency fT

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5946 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing Unit: mm 0.33+0.05 –0.02 • Features 0.10+0.05 –0.02 5˚ 1.20±0.05 0.80±0.05 • High transition frequency fT

2SA2120

Abstract: 2SC5948 2SA21
Contextual Info: 2SC5948 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5948 Power Amplifier Applications Unit: mm • Complementary to 2SA2120 • Recommended for audio frequency amplifier output stage. Absolute Maximum Ratings Tc = 25°C Characteristic Symbol Rating

2SC5946G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5946G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-frequency amplification/oscillation/mixing • Package ■ Features ■ Absolute Maximum Ratings Ta = 25°C

2-21F1A

Abstract: 2SA2121 2SC5949
Contextual Info: 2SA2121 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2121 Power Amplifier Applications Unit: mm z Complementary to 2SC5949 z Recommended for audio frequency amplifier output stage. Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating

2SA2121

Abstract: 2SC5949 2-21F1A
Contextual Info: 2SA2121 東芝トランジスタ シリコンPNP三重拡散形 2SA2121 ○ 電力増幅用 単位: mm • 2SC5949 とコンプリメンタリになります。 • オーディオアンプ出力段に最適です。 絶対最大定格 Tc = 25°C 項 目

Contextual Info: Transistors 2SC5946 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing Unit: mm 0.10+0.05 –0.02 0.33+0.05 –0.02 • Features 5˚ 1.20±0.05 0.80±0.05 • High transition frequency fT • SSS-Mini type package, allowing downsizing of the equipment

SSSMini3-F1

Abstract: 2SC5946
Contextual Info: トランジスタ 2SC5946 シリコンNPNエピタキシャルプレーナ形 高周波増幅・発振・混合用 Unit : mm 0.10+0.05 –0.02 0.33+0.05 –0.02 • 特 長 5˚ 0.80±0.05 0.80±0.05 1.20±0.05 ■ 絶対最大定格 Ta = 25°C 定格 単位

2SA21

Contextual Info: 2SA2120 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2120 Power Amplifier Applications Unit: mm • Complementary to 2SC5948 • Recommended for audio frequency amplifier output stage. Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating

2SC5948

Contextual Info: 2SC5948 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5948 Power Amplifier Applications Unit: mm • Complementary to 2SA2120 • Recommended for audio frequency amplifier output stage. Absolute Maximum Ratings Tc = 25°C Characteristic Symbol Rating