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    2SC307 Price and Stock

    Rochester Electronics LLC 2SC3070-AE

    NPN SILICON TRANSISTOR
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    DigiKey 2SC3070-AE Bulk 48,000 1,402
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    2SC3070-AE Bulk 32,000 1,402
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    Rochester Electronics LLC 2SC3071-AE

    SMALL SIGNAL BIPOLAR TRANSTR NPN
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    DigiKey 2SC3071-AE Bulk 1,902
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    Toshiba America Electronic Components 2SC3074-Y(Q)

    TRANS NPN 50V 5A PW-MOLD
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    DigiKey 2SC3074-Y(Q) Tube 200
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    Toshiba America Electronic Components 2SC3074-O(Q)

    TRANS NPN 50V 5A PW-MOLD
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    DigiKey 2SC3074-O(Q) Tube 200
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    onsemi 2SC3070-AE

    Bipolar (BJT) Single Transistor, NPN, 25 V, 1.2 A, 1 W, TO-226, Through Hole - Bulk (Alt: 2SC3070-AE)
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    Avnet Americas 2SC3070-AE Bulk 4 Weeks 1,687
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    Rochester Electronics 2SC3070-AE 48,000 1
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    Find more 2SC307 price and stock on Findchips.com

    2SC307 Datasheets (190)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC307 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC307 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SC307 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC307 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SC307 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC307 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC307 Unknown Cross Reference Datasheet Scan PDF
    2SC307 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC307 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SC307 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC307 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC307 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC307 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC307 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC307 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC3070 Sanyo Semiconductor NPN Epitaxial Planar Silicon Transistor Original PDF
    2SC3070 Various Russian Datasheets Transistor Original PDF
    2SC3070 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3070 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC3070 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    ...

    2SC307 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C3076

    Abstract: 2SC3076
    Text: Transistors SMD Type Silicon NPN Epitaxial 2SC3076 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 Low Collectror Saturation Voltage:VCE sat =0.5V(Max.)(IC=1A) +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 3 .8 0 +0.15


    Original     		PDF 2SC3076 O-252 C3076 C3076 2SC3076

    Untitled

    Abstract: No abstract text available
    Text: 2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) •


    Original     		PDF 2SC3072

    Untitled

    Abstract: No abstract text available
    Text: 2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 µs (typ.)


    Original     		PDF 2SC3076 2SA1241

    toshiba c3075

    Abstract: 2SC3075 C3075
    Text: 2SC3075 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC3075 Switching Regulator and High Voltage Switching Applications DC-DC Converter Applications DC-AC Converter Applications • Excellent switching times: tr = 1.0 s (max) • High collector breakdown voltage: VCEO = 400 V


    Original     		PDF 2SC3075 toshiba c3075 2SC3075 C3075

    c3074

    Abstract: 2SC3074 C3074 y 2SA1244
    Text: 2SC3074 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3074 ○ 大電力スイッチング用 • 単位: mm コレクタ飽和電圧が低い。: VCE (sat) = 0.4 V (最大) (IC = 3 A) • スイッチング時間が速い。: tstg = 1.0 s (標準)


    Original     		PDF 2SC3074 2SA1244 20070701-JA c3074 2SC3074 C3074 y 2SA1244

    c3075

    Abstract: 2SC3075
    Text: 2SC3075 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC3075 Switching Regulator and High Voltage Switching Applications DC-DC Converter Applications DC-AC Converter Applications • Excellent switching times: tr = 1.0 µs (max) • High collector breakdown voltage: VCEO = 400 V


    Original     		PDF 2SC3075 c3075 2SC3075

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    c3074

    Abstract: Transistor c3074 Equivalent 2SC3074 2SA1244 2SC3074 C3074 y
    Text: 2SC3074 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3074 High Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) · High speed switching time: tstg = 1.0 µs (typ) · Complementary to 2SA1244


    Original     		PDF 2SC3074 2SA1244 c3074 Transistor c3074 Equivalent 2SC3074 2SA1244 2SC3074 C3074 y

    Untitled

    Abstract: No abstract text available
    Text: 2SC3076 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.70 h(FE) Max. Current gain.240


    Original     		PDF 2SC3076 Freq100M StyleTO-251

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SC3077 Silicon NPN planer type For UHF amplification/mixing Unit: mm +0.2 2.8 –0.3 M Di ain sc te on na tin nc ue e/ d • Features 0.65±0.15 1.45 0.95 1.5 –0.05 1 0.95 3 +0.1 0.4 –0.05 +0.2 ● 2.9 –0.05 ● High power gain PG. High transition frequency fT.


    Original     		PDF 2SC3077

    transistor c3076

    Abstract: C3076 2SC3076 2SA1241
    Text: 2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 µs (typ.)


    Original     		PDF 2SC3076 2SA1241 transistor c3076 C3076 2SC3076 2SA1241

    2SC3077

    Abstract: No abstract text available
    Text: Transistor 2SC3077 Silicon NPN planer type For UHF amplification/mixing M Di ain sc te on na tin nc ue e/ d Unit: mm +0.2 2.8 –0.3 0.65±0.15 1.45 0.95 1.5 –0.05 1 0.95 3 +0.1 0.4 –0.05 +0.2 ● High power gain PG. High transition frequency fT. Mini type package, allowing downsizing of the equipment and


    Original     		PDF 2SC3077 2SC3077

    Untitled

    Abstract: No abstract text available
    Text: 2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 s (typ.)


    Original     		PDF 2SC3076 2SA1241

    Untitled

    Abstract: No abstract text available
    Text: 2SC3075 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC3075 Switching Regulator and High Voltage Switching Applications Unit: mm DC-DC Converter Applications DC-AC Converter Applications • Excellent switching times: tr = 1.0 µs (max)


    Original     		PDF 2SC3075

    Untitled

    Abstract: No abstract text available
    Text: 2SC3072 SILICON NPN EPITAXIAL T Y P E STROBO FLASH APPLICATIONS. Unit in iran MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES: . High DC Current Gain: hFE=140-~450 VCE=2V, IC=0.5A hFE=70(Min.) (VcE=2V, Ic =4A) . Low Collector Saturation Voltage : VCE(sat)=1.0V(Max.) (Ic=4A, Ib =0.1A)


    OCR Scan     		PDF 2SC3072 T11RAT10

    J600 transistor

    Abstract: transistor J600 2SC3070 VEBO-15V
    Text: Ordering number: EN 923G _ 2SC3070 No.923G NPN Epitaxial Planar Silicon Transistor High hpE> Low-Frequency General-Purpose Amp Applications Applications • Low-frequency, general-purpose amp., various drivers, muting circuit Features • High DC current gain hpE=800 to 3200}


    OCR Scan     		PDF 2SC3070 Ratings/Ta-25Â J600 transistor transistor J600 VEBO-15V

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3075 TOSHIBA TRANSISTOR ? SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS <; r 3 n i * INDUSTRIAL APPLICATIONS Unit in mm SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS HIGH SPEED DC-DC CONVERTER APPLICATIONS 6.8MAX. (A ) • i^H 5.2 ±0.2


    OCR Scan     		PDF 2SC3075

    lth7

    Abstract: 2SC3079M 2SC4013
    Text: ROHM CO LTD 4GE D • 76S6TÌ1 /I ransistors 0005745 7 BRHM 2SC3079M/2SC4013 T-Zl-iS 2SC3079u 2SC4013 y y 3 > h 7 > y ^ 5 isiii^ la Ìiffl/R F Amplifier Epitaxial Planar NPN Silicon Transistors • W f i 't f iill/ D im e n s io n s Unit : mm 1) fT=500M H z Typ. (at 1mA)


    OCR Scan     		PDF 2SC4013 2SC3079M/2SC4013 500MHz 500MHz 2SC3079M lth7 2SC3079M 2SC4013

    2SA1241

    Abstract: 2SC3076 30J40
    Text: TO SH IBA 2SC3076 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3076 POWER SWITCHING APPLICATIONS • • • Low Collector Saturation Voltage : VCE (sat) = °-5 v (Max.) (Iç; = 1 A) Excellent Switching Time : tstg = 1.0 /us (Typ.)


    OCR Scan     		PDF 2SC3076 2SA1241 2SA1241 2SC3076 30J40

    2SC3072

    Abstract: No abstract text available
    Text: TO SH IBA 2SC3072 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3072 Unit in mm STROBE FLASH APPLICATIONS (A) MEDIUM POWER AMPLIFIER APPLICATIONS 6.8MAX., 5 .2 1 0 .2 r- • • • I 'l P in 0.6M AX. - t f - High DC Current Gain : hpE = 140~450


    OCR Scan     		PDF 2SC3072 2SC3072

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC3075 TOSHIBA TRANSISTOR i SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS < ; r n 3 i * INDUSTRIAL APPLICATIONS Unit in mm SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS. w jiixceuenL o w n c n in g n m e s


    OCR Scan     		PDF 2SC3075

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC3072 TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3072 MEDIUM POWER AMPLIFIER APPLICATIONS. • High DC Current Gain : hpE —140~450 (Vç e = 2V, I ç = 0.5A) h p E -7 0 (Min.) (Vç e = 2V, I ç = 4A)


    OCR Scan     		PDF 2SC3072

    2SC3071

    Abstract: 3CS5 946G
    Text: Ordering number: EN 946G 2SC3071 No.946G NPN Epitaxial Planar Silicon Transistor High hpE, Low-Frequency General-Purpose Amp Applications A pplications •Low-frequency general-purpose amplifiers, various drivers, muting circuits. F e a tu re s • High DC current gain hpE = 500 to 2000 .


    OCR Scan     		PDF 2SC3071 3CS5 946G

    2SC3077

    Abstract: JT MARKING marking AIJ I
    Text: 2SC3077 2SC3077 '> V =1 V NPN y l— -tm /Si NPN Planar U H F igig, îS ê f f l/U H F Amplifier, Mixer • 1$ ^ /F e a tu r e s • PG ^ ^ 0/ H i g h PG . >Wfcik U ¿ ^ ' o / H i g h fT • >3 £Z>êMm A ^ -n T tL ; MINI Type package suitable for small equipment, tape and


    OCR Scan     		PDF 2SC3077 S059A Ik--10 VCB-10 2SC3077 JT MARKING marking AIJ I