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    Superapex Corp SAC3074QP3

    IC RF AMP RADAR 20MHZ-1GHZ 12QFN
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    Superapex Corp SAC3074

    IC RF AMP GPS 20MHZ-1GHZ DIE
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    onsemi KSC3074OTU

    TRANS NPN 50V 5A IPAK
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    Toshiba America Electronic Components 2SC3074-O(Q)

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    C3074 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    C30742-33-050-T1 Excelitas Technologies Sensors, Transducers - Optical Sensors - Photodiodes - PHOTOMULTIPLIER SI TO-8 TEC Original PDF

    C3074 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Overview Features and Benefits PerkinElmer’s C30741 series of N-type silicon p-i-n photodiodes provide fast response and high quantum efficiency in the spectral range of 400 to 1100 nm. The wavelength of maximum sensitivity is @ 800 nm. As different applications have different


    Original     		PDF C30741 DTS0408P

    C30741PH-15S

    Abstract: No abstract text available
    Text: High-Speed Silicon PIN Photodiodes C30741Series Overview Features and Benefits Excelitas’ C30741 series of N-type silicon p-i-n photodiodes provide fast response and high quantum efficiency in the spectral range of 400 to 1100 nm. The wavelength of maximum sensitivity is


    Original     		PDF C30741Series C30741 DTS0408P C30741PH-15S

    c3074

    Abstract: 2SC3074 C3074 y 2SA1244
    Text: C3074 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ C3074 ○ 大電力スイッチング用 • 単位: mm コレクタ飽和電圧が低い。: VCE (sat) = 0.4 V (最大) (IC = 3 A) • スイッチング時間が速い。: tstg = 1.0 s (標準)


    Original     		PDF 2SC3074 2SA1244 20070701-JA c3074 2SC3074 C3074 y 2SA1244

    c3074

    Abstract: Transistor c3074 Equivalent 2SC3074 2SA1244 2SC3074 C3074 y
    Text: C3074 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C3074 High Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) · High speed switching time: tstg = 1.0 µs (typ) · Complementary to 2SA1244


    Original     		PDF 2SC3074 2SA1244 c3074 Transistor c3074 Equivalent 2SC3074 2SA1244 2SC3074 C3074 y

    MAX8770

    Abstract: ICS954310 motherboard samsung ba41 MDB41 PC87541 QUANTA C3229 C3198 PC87541 sil3512 quanta
    Text: 1 2 3 4 5 CPU Yonah/Merom 478 PIN micro FC-PGA 1 RJ9 Block Diagram P3,4 14.318MHz FSB 667 MHz(166X4) A LVDS LCD A LVDS P7 CLOCK GEN DDRII 400/533/667 Calistoga DVI M56 UNBUFFERED DDRII SODIMM CRT P11 P2 P12 945GM/PM R/G/B ICS954310 R/G/B 1466 PIN (micro FCBGA)


    Original     		PDF 318MHz 166X4) ICS954310 945GM/PM P5-10 16Lanes P36-40 88E8053 ALC260 TI-TPA6011A4 MAX8770 ICS954310 motherboard samsung ba41 MDB41 PC87541 QUANTA C3229 C3198 PC87541 sil3512 quanta

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    L6284

    Abstract: A1273 L6283 a1046 L6278 L6559 l6262 a1583e A1154 a1273* transistor
    Text: RVCT 2.0 Build Tools - Errors and Warnings Release 1.0 – 27th August 2003 Introduction This document illustrates the errors and warning messages that are generated by the Build Tools of ARM RealView Compilation Tools 2.0 and later. If you are using ADS ADS 1.2, 1.1 or 1.0.1 or RVCT 1.2


    Original     		PDF L6875W: L6284 A1273 L6283 a1046 L6278 L6559 l6262 a1583e A1154 a1273* transistor

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    C3074

    Abstract: 2SC3074 C3074 y ta1028 2SA1244
    Text: C3074 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ C3074 ○ 大電力スイッチング用 • 単位: mm コレクタ飽和電圧が低い。: VCE (sat) = 0.4 V (最大) (IC = 3 A) • スイッチング時間が速い。: tstg = 1.0 s (標準)


    Original     		PDF 2SC3074 2SA1244 C3074 2SC3074 C3074 y ta1028 2SA1244

    c3074

    Abstract: Transistor c3074 2SC3074 C3074 y Equivalent 2SC3074 2SA1244
    Text: C3074 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C3074 High Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 µs (typ) • Complementary to 2SA1244


    Original     		PDF 2SC3074 2SA1244 c3074 Transistor c3074 2SC3074 C3074 y Equivalent 2SC3074 2SA1244

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    Untitled

    Abstract: No abstract text available
    Text: C3074 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C3074 High Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 µs (typ) • Complementary to 2SA1244


    Original     		PDF 2SC3074 2SA1244

    l6703

    Abstract: asm 1442 L6916E SVC 561 14 L6232E A1659 a1718 a1694 C2068 STR 6765
    Text: RVCT 3.0 SP1 Build Tools - Errors and Warnings Last updated March 2008 Introduction This document illustrates the errors and warning messages that are generated by the Build Tools of ARM RealView Compilation Tools 3.0, 3.0 Service Pack 1, and subsequent 3.0 patches. If you are using ADS


    Original     		PDF x3903U: x3904U: x3905U: x3906U: x3907U: x3908U: x3910W: x3912W: x3913W: x3915W: l6703 asm 1442 L6916E SVC 561 14 L6232E A1659 a1718 a1694 C2068 STR 6765

    C3074

    Abstract: 2SC3074 2SA1244
    Text: C3074 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ C3074 ○ 大電力スイッチング用 • 単位: mm コレクタ飽和電圧が低い。: VCE (sat) = 0.4 V (最大) (IC = 3 A) • スイッチング時間が速い。: tstg = 1.0 s (標準)


    Original     		PDF 2SC3074 2SA1244 C3074 2SC3074 2SA1244

    Transistor c3074

    Abstract: c3074 2SC3074 2SA124 2SA1244
    Text: C3074 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C3074 High Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 µs (typ) • Complementary to 2SA1244


    Original     		PDF 2SC3074 2SA1244 Transistor c3074 c3074 2SC3074 2SA124 2SA1244

    c3074

    Abstract: Equivalent 2SC3074 2SA1244 2SC3074
    Text: C3074 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C3074 High Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 s (typ) • Complementary to 2SA1244


    Original     		PDF 2SC3074 2SA1244 c3074 Equivalent 2SC3074 2SA1244 2SC3074

    A1273

    Abstract: l6703 power transistor mrc 438 L6232E 2 607 335 254 a1273* transistor ARM10200 c2874 L6726 l6232
    Text: RVCT 2.2 Build Tools - Errors and Warnings Release 2.0 – 19th September 2005 Introduction This document illustrates the errors and warning messages that are generated by the Build Tools of ARM RealView Compilation Tools 2.2 and later. If you are using ADS ADS 1.2, 1.1 or 1.0.1 or RVCT 1.2


    Original     		PDF x0001U: x0002U: x0003U: x0004U: x0005U: x0006U: x0007U: x0008U: x0010W: x0012W: A1273 l6703 power transistor mrc 438 L6232E 2 607 335 254 a1273* transistor ARM10200 c2874 L6726 l6232

    C2335

    Abstract: C2331 C2458 C2491 C2314E C2021E C2275 C2271 C2987 C2499
    Text: ADS 1.2 Build Tools - Errors and Warnings Release 1.2 - 2nd September 2003 Introduction This document illustrates the errors and warning messages that are generated by the Build Tools of ARM Developer Suite ADS version 1.2 and the RealView Compilation Tools (RVCT) version 1.2. Many of


    Original     		PDF an104 L6875W: C2335 C2331 C2458 C2491 C2314E C2021E C2275 C2271 C2987 C2499

    c3207

    Abstract: C3331 c3206 C3374 C3478 C3507 c3355 C3502 Toshiba C3388 c3320
    Text: CR-1 8 7 6 5 3 4 2 1 REVISIONS ZONE DESCRIPTION LTR DATE APPR. SONY PROPRIETARY INFORMATION F F SONY CONFIDENTIAL IRX-3130 E SCHEMATICS E TV TUNER BOARD ENX-31 TABLE OF CONTENTS BLOCK TITLE D PAGE REF.NO. DESCRIPTIONS 1 XXXX - XXXX INDEX THIS PAGE HISTORY


    Original     		PDF IRX-3130 ENX-31 RB3557 RB3600 RB3601 RB3602 RB3603 RB3610 RB3611 RB3612 c3207 C3331 c3206 C3374 C3478 C3507 c3355 C3502 Toshiba C3388 c3320

    sil3512

    Abstract: C3088 CMOS Camera G966-25 C3198 PC87541 ICS9lpr310 7336A 915GM c3197 VT6212
    Text: 1 2 3 4 5 478 PIN micro FC-PGA 1 RJ6 Block Diagram CPU Yonah/Merom P3,4 14.318MHz FSB 667 MHz(166X4) A LVDS LCD A LVDS P7 CLOCK GEN DDRII 400/533/667 Calistoga DVI M56 UNBUFFERED DDRII SODIMM 945GM/PM R/G/B CRT P11 R/G/B 1466 PIN (micro FCBGA) 37.5mm x 37.5mm


    Original     		PDF 318MHz 166X4) ICS954310 945GM/PM P5-10 16Lanes P36-40 88E8055 ALC260 P13-16 sil3512 C3088 CMOS Camera G966-25 C3198 PC87541 ICS9lpr310 7336A 915GM c3197 VT6212

    GT45F122

    Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
    Text: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124

    GT30J124

    Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004I SC-43) 2SC1815 GT30J124 smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram

    InGaAs quadrant

    Abstract: C30822E UV245BG UV-215BQ C30971 C30641EH-TC FFD-100 YAG-100A
    Text: Photodiodes for High-Performance Applications PIN Photo- PIN Photodiodes InGaAs and Si PIN Diodes, Quadrant Detectors, UV-Enhanced diodes For Industrial Applications InGaAs and Si PIN Diodes – Quadrant Detectors – UV-Enhanced Applications • Telecom


    Original     		PDF C30845EH YAG-444-4AH DTC-140H InGaAs quadrant C30822E UV245BG UV-215BQ C30971 C30641EH-TC FFD-100 YAG-100A