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    2SA1244 Search Results

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    2SA1244 Price and Stock

    Toshiba America Electronic Components 2SA1244-Y(T6L1,NQ)

    PB-F POWER TRANSISTOR; PW-MOLD;
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    DigiKey 2SA1244-Y(T6L1,NQ) Cut Tape 1,904 1
    • 1 $0.91
    • 10 $0.746
    • 100 $0.5804
    • 1000 $0.40072
    • 10000 $0.40072
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    2SA1244-Y(T6L1,NQ) Reel 2,000
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    • 10000 $0.3525
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    2SA1244-Y(T6L1,NQ) Digi-Reel 1
    • 1 $0.91
    • 10 $0.746
    • 100 $0.5804
    • 1000 $0.40072
    • 10000 $0.40072
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    Mouser Electronics 2SA1244-Y(T6L1,NQ) 1,989
    • 1 $0.91
    • 10 $0.746
    • 100 $0.58
    • 1000 $0.401
    • 10000 $0.352
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    Verical 2SA1244-Y(T6L1,NQ) 1,720 31
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    • 100 $0.73
    • 1000 $0.3863
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    Quest Components 2SA1244-Y(T6L1,NQ) 1,169
    • 1 $1.13
    • 10 $1.13
    • 100 $0.565
    • 1000 $0.452
    • 10000 $0.452
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    TTI 2SA1244-Y(T6L1,NQ) Reel 2,000
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    Chip1Stop 2SA1244-Y(T6L1,NQ) Cut Tape 1,720
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    • 10 $0.819
    • 100 $0.584
    • 1000 $0.309
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    Toshiba America Electronic Components 2SA1244-Y(Q)

    TRANS PNP 50V 5A PW-MOLD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SA1244-Y(Q) Tube 200
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    • 1000 $0.4613
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    Avnet Americas 2SA1244-Y(Q) Bulk 12 Weeks 200
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    Toshiba America Electronic Components 2SA1244YT6L1NQ

    TRANSISTOR - Tape and Reel (Alt: 2SA1244-Y(T6L1,NQ))
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 2SA1244YT6L1NQ Reel 53 Weeks, 1 Days 2,000
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    • 10000 $0.4653
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    Toshiba America Electronic Components 2SA1244-Y

    Bipolar Junction Transistor, PNP Type, TO-251
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SA1244-Y 9
    • 1 $1.08
    • 10 $0.9
    • 100 $0.9
    • 1000 $0.9
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    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SA1244-Y(TE16R) 7,840
    • 1 $6.2619
    • 10 $6.2619
    • 100 $6.2619
    • 1000 $3.131
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    2SA1244 Datasheets (30)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SA1244 Toshiba Silicon PNP Transistor Original PDF
    2SA1244 Toshiba PNP transistor Original PDF
    2SA1244 Various Russian Datasheets Transistor Original PDF
    2SA1244 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SA1244 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1244 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1244 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1244 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1244 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1244 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1244 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SA1244 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SA1244 Toshiba Silicon PNP transistor for high current switching applications Scan PDF
    2SA1244(2-7J1A) Toshiba 2SA1244 - TRANSISTOR 5000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-7J1A, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SA1244O Toshiba 2SA1244 - TRANSISTOR 5000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, ROHS COMPLIANT, 2-7J1A, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SA1244-O Toshiba 2SA1244 - TRANSISTOR 5000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, ROHS COMPLIANT, 2-7J1A, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SA1244-O Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1244O Toshiba Silicon PNP Epitaxial Type Transistor Scan PDF
    2SA1244-O(2-7B1A) Toshiba 2SA1244 - TRANSISTOR 5000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original PDF
    2SA1244-O(2-7B2A) Toshiba 2SA1244 - TRANSISTOR 5000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original PDF

    2SA1244 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c3074

    Abstract: Transistor c3074 Equivalent 2SC3074 2SA1244 2SC3074 C3074 y
    Text: 2SC3074 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3074 High Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) · High speed switching time: tstg = 1.0 µs (typ) · Complementary to 2SA1244


    Original
    PDF 2SC3074 2SA1244 c3074 Transistor c3074 Equivalent 2SC3074 2SA1244 2SC3074 C3074 y

    a1244

    Abstract: Transistor a1244 2SA1244 2SC3074
    Text: 2SA1244 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1244 High Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) · High speed switching time: tstg = 1.0 µs (typ.) · Complementary to 2SC3074


    Original
    PDF 2SA1244 2SC3074 a1244 Transistor a1244 2SA1244 2SC3074

    a1244

    Abstract: Transistor a1244 2SA1244 2SC3074
    Text: 2SA1244 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1244 High Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) • High speed switching time: tstg = 1.0 µs (typ.) •


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    PDF 2SA1244 2SC3074 a1244 Transistor a1244 2SA1244 2SC3074

    2SA1244

    Abstract: A1244 2SC3074
    Text: 2SA1244 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1244 ○ 大電流スイッチング用 • 単位: mm コレクタ飽和電圧が低い。 : VCE (sat) = −0.4 V (最大) (IC = −3 A) • スイッチング時間が速い。 : tstg = 1.0 s (標準)


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    PDF 2SA1244 2SC3074 2SA1244 A1244 2SC3074

    c3074

    Abstract: Transistor c3074 2SC3074 C3074 y Equivalent 2SC3074 2SA1244
    Text: 2SC3074 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3074 High Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 µs (typ) • Complementary to 2SA1244


    Original
    PDF 2SC3074 2SA1244 c3074 Transistor c3074 2SC3074 C3074 y Equivalent 2SC3074 2SA1244

    Untitled

    Abstract: No abstract text available
    Text: 2SC3074 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3074 High Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 µs (typ) • Complementary to 2SA1244


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    PDF 2SC3074 2SA1244

    A1244

    Abstract: 2SA1244 2SC3074
    Text: 2SA1244 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1244 ○ 大電流スイッチング用 • 単位: mm コレクタ飽和電圧が低い。 : VCE (sat) = −0.4 V (最大) (IC = −3 A) • スイッチング時間が速い。 : tstg = 1.0 s (標準)


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    PDF 2SA1244 2SC3074 20070701-JA A1244 2SA1244 2SC3074

    A1244

    Abstract: 2SA1244 2SC3074
    Text: 2SA1244 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1244 ○ 大電流スイッチング用 • 単位: mm コレクタ飽和電圧が低い。 : VCE (sat) = −0.4 V (最大) (IC = −3 A) • スイッチング時間が速い。 : tstg = 1.0 s (標準)


    Original
    PDF 2SA1244 2SC3074 A1244 2SA1244 2SC3074

    c3074

    Abstract: C3074 y 2SA1244 2SC3074
    Text: 2SC3074 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3074 High Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 s (typ) • Complementary to 2SA1244


    Original
    PDF 2SC3074 2SA1244 c3074 C3074 y 2SA1244 2SC3074

    Transistor c3074

    Abstract: c3074 2SC3074 2SA124 2SA1244
    Text: 2SC3074 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3074 High Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 µs (typ) • Complementary to 2SA1244


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    PDF 2SC3074 2SA1244 Transistor c3074 c3074 2SC3074 2SA124 2SA1244

    Untitled

    Abstract: No abstract text available
    Text: 2SA1244 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1244 High Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) • High speed switching time: tstg = 1.0 s (typ.) • Complementary to 2SC3074


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    PDF 2SA1244 2SC3074

    Untitled

    Abstract: No abstract text available
    Text: 2SA1244 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V)400m @I(C) (A) (Test Condition)3.0


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    PDF 2SA1244 Freq60MÃ

    Untitled

    Abstract: No abstract text available
    Text: 2SA1244Y Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V)0.4 @I(C) (A) (Test Condition)3


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    PDF 2SA1244Y Freq60MÃ

    c3074

    Abstract: Equivalent 2SC3074 2SA1244 2SC3074
    Text: 2SC3074 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3074 High Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 s (typ) • Complementary to 2SA1244


    Original
    PDF 2SC3074 2SA1244 c3074 Equivalent 2SC3074 2SA1244 2SC3074

    Transistor a1244

    Abstract: a1244 2SA1244 2SC3074
    Text: 2SA1244 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1244 High Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) • High speed switching time: tstg = 1.0 s (typ.) •


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    PDF 2SA1244 2SC3074 Transistor a1244 a1244 2SA1244 2SC3074

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SA1244 Transistor Unit in mm Silicon PNP Epitaxial Type PCT Process * High Current Switching Applications s rJ- Features CM Ö •H • Low Collector Saturation Voltage " V ce (Sat) = -0.4 V (Max.) at lc = -3A • High Speed Switching Time


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    PDF 2SA1244 2SC3074

    2SA1244

    Abstract: No abstract text available
    Text: 2SA1244 TO SHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1244 HIGH CURRENT SWITCHING APPLICATIONS • Low Collector Saturation Voltage : v CE(sat) = - 0 .4 V (Max.) at I q = - 3 A • High Speed Switching Time : tstg = 1.0 /¿s (Typ.)


    OCR Scan
    PDF 2SA1244 2SC3074 961001EAA2 2SA1244

    A1244

    Abstract: 2SA1244 2SC3074
    Text: 2SA1244 TO SH IBA 2 S A 1 244 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS • • • Low Collector Saturation Voltage : v CE(sat) = -0 .4 V (Max.) at I q = - 3 A High Speed Switching Time : tstg = 1.0 /us (Typ.)


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    PDF 2SA1244 2SC3074 A1244 2SA1244

    2SA1244

    Abstract: a1244 2SC3074 SA1244
    Text: 2SA1244 TOSHIBA 2 S A 1 244 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS • Low Collector Saturation Voltage : v CE(sat) = -0 .4 V (Max.) at I q = - 3 A • High Speed Switching Time : tstg = 1.0 /us (Typ.)


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    PDF 2SA1244 2SC3074 961001EAA1 2SA1244 a1244 2SC3074 SA1244

    2SA1244

    Abstract: 2SC3074
    Text: TOSHIBA 2SC3074 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3074 HIGH CURRENT SWITCHING APPLICATIONS. • Low Collector Saturation Voltage : VCE (sat) = °-4V (Max.) (at Ie = 3A) High Speed Switching Time : ts^g^l.O/^s (Typ.) Complementary to 2SA1244


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    PDF 2SC3074 2SA1244 95MAX 2SA1244 2SC3074

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TRANSISTOR 2SC3074 SILICON NPN EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SWITCHING APPLICATIONS. Unit in mm FEATURES: . Low Collector Saturation Voltage : VcE(sat)=0.4V(Max.) a (at Ic=3A) . High Speed Switching Time : tstg=l-0^s(Typ.) . Complementary to 2SA1244


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    PDF 2SC3074 2SA1244 Collector80

    2SA1244

    Abstract: A1244 2SC3074
    Text: 2SA1244 TOSHIBA 2 S A 1 244 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS • Low Collector Saturation Voltage : v CE(sat) = -0 .4 V (Max.) at I q = - 3 A • High Speed Switching Time : tstg = 1.0 /us (Typ.)


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    PDF 2SA1244 2SC3074 961001EAA2 2SA1244 A1244 2SC3074

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SW ITCHING APPLICATIONS. • • • Low Collector Saturation Voltage : v CE(sat) = °-4V (Max.) (at Ic = 3A) High Speed Switching Time : tgtg= 1.0/^s (Typ.) Complementary to 2SA1244 M A X IM U M RATINGS (Ta = 25°C)


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    PDF 2SA1244 2SC3074

    2SA1244

    Abstract: No abstract text available
    Text: SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1244 HIGH CURRENT SWITCHING APPLICATIONS. • U n it in mm Low Collector S aturation Voltage : v C E(sat)= -0 .4 V (M a x .)a t I c = - 3 A • High Speed Sw itching Time : ts(,g = 1.0^s(Typ.) • Complementary to 2SC3074


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    PDF 2SA1244 2SC3074 2SA1244