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    C3076 Search Results

    C3076 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    SiT3373AC-2E9-33NC307.695484 SiTime 220 to 725 MHz Ultra-low Jitter Differential VCXO Datasheet
    SiT3373AC-4B3-30NC307.695484 SiTime 220 to 725 MHz Ultra-low Jitter Differential VCXO Datasheet
    SiT3373AC-4B9-30NC307.695484 SiTime 220 to 725 MHz Ultra-low Jitter Differential VCXO Datasheet
    SiT3373AC-4E2-33NC307.695484 SiTime 220 to 725 MHz Ultra-low Jitter Differential VCXO Datasheet
    SiT3373AC-4E9-28NC307.695484 SiTime 220 to 725 MHz Ultra-low Jitter Differential VCXO Datasheet
    SiT3373AI-1B3-30NC307.695484 SiTime 220 to 725 MHz Ultra-low Jitter Differential VCXO Datasheet
    SF Impression Pixel

    C3076 Price and Stock

    3M Interconnect 8KC3-0761

    TWIN AXIAL PCI EXPRESS X16 EXTEN
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    DigiKey 8KC3-0761 Bulk 100
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    KEMET Corporation C0402C100K5GAC3076

    CAP CER 10PF 50V C0G/NP0 0402
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    DigiKey C0402C100K5GAC3076 Reel 60,000
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    KEMET Corporation C0603C104K5RAC3076

    CAP CER 0.1UF 50V X7R 0603
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    DigiKey C0603C104K5RAC3076 Reel 20,000
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    KEMET Corporation C0603C473K4RAC3076

    CAP CER 0.047UF 16V X7R 0603
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    DigiKey C0603C473K4RAC3076 Reel 16,000
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    TTI C0603C473K4RAC3076 Reel 16,000
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    KEMET Corporation C0402C471K5RAC3076

    CAP CER 470PF 50V X7R 0402
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    DigiKey C0402C471K5RAC3076 Reel 50,000
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    Find more C3076 price and stock on Findchips.com

    C3076 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C3076

    Abstract: 2SC3076
    Text: Transistors SMD Type Silicon NPN Epitaxial C3076 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 Low Collectror Saturation Voltage:VCE sat =0.5V(Max.)(IC=1A) +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 3 .8 0 +0.15


    Original     		PDF 2SC3076 O-252 C3076 C3076 2SC3076

    Untitled

    Abstract: No abstract text available
    Text: C3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 µs (typ.)


    Original     		PDF 2SC3076 2SA1241

    transistor c3076

    Abstract: C3076 2SC3076 2SA1241
    Text: C3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 µs (typ.)


    Original     		PDF 2SC3076 2SA1241 transistor c3076 C3076 2SC3076 2SA1241

    MAX8770

    Abstract: ICS954310 motherboard samsung ba41 MDB41 PC87541 QUANTA C3229 C3198 PC87541 sil3512 quanta
    Text: 1 2 3 4 5 CPU Yonah/Merom 478 PIN micro FC-PGA 1 RJ9 Block Diagram P3,4 14.318MHz FSB 667 MHz(166X4) A LVDS LCD A LVDS P7 CLOCK GEN DDRII 400/533/667 Calistoga DVI M56 UNBUFFERED DDRII SODIMM CRT P11 P2 P12 945GM/PM R/G/B ICS954310 R/G/B 1466 PIN (micro FCBGA)


    Original     		PDF 318MHz 166X4) ICS954310 945GM/PM P5-10 16Lanes P36-40 88E8053 ALC260 TI-TPA6011A4 MAX8770 ICS954310 motherboard samsung ba41 MDB41 PC87541 QUANTA C3229 C3198 PC87541 sil3512 quanta

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    Untitled

    Abstract: No abstract text available
    Text: C3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 s (typ.)


    Original     		PDF 2SC3076 2SA1241

    SW461

    Abstract: CXA1810AQ SG45 DIODE CXA1810AR SW30 rv107 AR2524
    Text: CXA1810AQ/AR Luminance and Color Signal Processing for 8mm VCR For the availability of this product, please contact the sales office. Description The CXA1810AQ/AR is an IC designed for 8mm VCR Y/C main signal processing for consumer use. Equipped with many built-in filters, the


    Original     		PDF CXA1810AQ/AR CXA1810AQ/AR CXA1810AQ CXA1810AR 64PIN LQFP-64P-L01 LQFP064-P-1010 SW461 CXA1810AQ SG45 DIODE CXA1810AR SW30 rv107 AR2524

    SG45 DIODE

    Abstract: CXA1810AQ CXA1810AR SW30 rf tRAP fILTER dds AR2524 3579545Hz C2021M FCE22 fnc4
    Text: CXA1810AQ/AR Luminance and Color Signal Processing for 8mm VCR Description The CXA1810AQ/AR is an IC designed for 8mm VCR Y/C main signal processing for consumer use. Equipped with many built-in filters, the CXA1810AQ/AR is a one-chip main signal processing system that greatly reduces the number


    Original     		PDF CXA1810AQ/AR CXA1810AQ/AR CXA1810AQ CXA1810AR dissipa1420 42/COPPER 64PIN LQFP-64P-L01 SG45 DIODE CXA1810AQ CXA1810AR SW30 rf tRAP fILTER dds AR2524 3579545Hz C2021M FCE22 fnc4

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    C3076

    Abstract: 2SA1241 2SC3076
    Text: C3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 µs (typ.)


    Original     		PDF 2SC3076 2SA1241 C3076 2SA1241 2SC3076

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    c3076

    Abstract: 2SA1241 2SC3076 transistor c3076
    Text: C3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) · Excellent switching time: tstg = 1.0 µs (typ.)


    Original     		PDF 2SC3076 2SA1241 c3076 2SA1241 2SC3076 transistor c3076

    C3076

    Abstract: 2SC3076 2SA1241
    Text: C3076 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ C3076 ○ 電力増幅用 ○ 電力スイッチング用 単位: mm • 飽和電圧が低い。 • スイッチング時間が速い。 : tstg = 1.0 s (標準) 2SA1241 とコンプリメンタリになります。


    Original     		PDF 2SC3076 2SA1241 20070701-JA C3076 2SC3076 2SA1241

    transistor c3076

    Abstract: C3076 2SA1241 2SC3076 024 marking code
    Text: C3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 µs (typ.)


    Original     		PDF 2SC3076 2SA1241 transistor c3076 C3076 2SA1241 2SC3076 024 marking code

    sil3512

    Abstract: C3088 CMOS Camera G966-25 C3198 PC87541 ICS9lpr310 7336A 915GM c3197 VT6212
    Text: 1 2 3 4 5 478 PIN micro FC-PGA 1 RJ6 Block Diagram CPU Yonah/Merom P3,4 14.318MHz FSB 667 MHz(166X4) A LVDS LCD A LVDS P7 CLOCK GEN DDRII 400/533/667 Calistoga DVI M56 UNBUFFERED DDRII SODIMM 945GM/PM R/G/B CRT P11 R/G/B 1466 PIN (micro FCBGA) 37.5mm x 37.5mm


    Original     		PDF 318MHz 166X4) ICS954310 945GM/PM P5-10 16Lanes P36-40 88E8055 ALC260 P13-16 sil3512 C3088 CMOS Camera G966-25 C3198 PC87541 ICS9lpr310 7336A 915GM c3197 VT6212

    2SC3076

    Abstract: C3076 2SA1241
    Text: C3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 s (typ.)


    Original     		PDF 2SC3076 2SA1241 2SC3076 C3076 2SA1241

    GT45F122

    Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
    Text: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124

    GT30J124

    Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004I SC-43) 2SC1815 GT30J124 smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram

    Untitled

    Abstract: No abstract text available
    Text: C3076 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ C3076 ○ 電力増幅用 ○ 電力スイッチング用 単位: mm • 飽和電圧が低い。 • スイッチング時間が速い。 : tstg = 1.0 s (標準) 2SA1241 とコンプリメンタリになります。


    Original     		PDF 2SC3076 2SA1241

    SG45 DIODE

    Abstract: dds fm modulator diode SG54 sg32 diode FNC10 3m color dropout compensation AM/FM ic sony SG45 CXA1810AQ CXA1810AR
    Text: CXA1810AQ/AR Luminance and Color Signal Processing for 8mm VCR Description The CXA1810AQ/AR is an IC designed for 8mm VCR Y/C main signal processing for consumer use. Equipped with many built-in filters, the CXA1810AQ/AR is a one-chip main signal processing system that greatly reduces the number


    Original     		PDF CXA1810AQ/AR CXA1810AQ/AR CXA1810AQ CXA1810AR 64PIN LQFP-64P-L01 LQFP064-P-1010 SG45 DIODE dds fm modulator diode SG54 sg32 diode FNC10 3m color dropout compensation AM/FM ic sony SG45 CXA1810AQ CXA1810AR

    Untitled

    Abstract: No abstract text available
    Text: C3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 s (typ.)


    Original     		PDF 2SC3076 2SA1241

    6265A

    Abstract: M96-SCE RTL8111d kb3926 RTL8103 RTL8111DL SLG8SP626V C3198 RTL8103E p2003bvg
    Text: 1 2 3 A 1 2 3 4 5 6 : : : : : : 5 6 7 8 01 UT12 SYSTEM DIAGRAM PCB STACK UP LAYER LAYER LAYER LAYER LAYER LAYER 4 DDRII DDRII-SODIMM1 TOP IN1 IN2 VCC IN3 BOT 667/800 MHz AMD Lion Sabie Griffin PAGE 7,8 DDRII DDRII-SODIMM2 CPU THERMAL SENSOR S1G2 Processor


    Original     		PDF 318MHz ICS9LPRS476AKLFT-- SLG8SP626VTR-- RTM880N-795 RJ-45 Pin99 Pin34 Pin101 Pin101 6265A M96-SCE RTL8111d kb3926 RTL8103 RTL8111DL SLG8SP626V C3198 RTL8103E p2003bvg

    Untitled

    Abstract: No abstract text available
    Text: m DOUBLE HETEROJUNCTION AIGaAs RED LOW CURRENT DISPLAYS OPTOELECTRflHiCS 7.6mm 0.3in 14.2mm (0.56in) 20.0mm (0.8in) MAN30X0A MAN60X0 MAN80X0 DESCRIPTION This line of solid state LED displays uses newly developed Double Heterojunction (HD) AIGaAs/GaAs material to emit deep red light at 650 nm. This material


    OCR Scan     		PDF MAN30X0A MAN60X0 MAN80X0 MAN8000 650/xcd/seg MAN3010 MAN3020 C3072 MAN6060 MAN6080