Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SC2982 Search Results

    SF Impression Pixel

    2SC2982 Price and Stock

    Toshiba America Electronic Components 2SC2982-B (TE12R,C)

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics 2SC2982-B (TE12R,C) 8,600
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Toshiba America Electronic Components 2SC2982-B(TE12L,C)

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SC2982-B(TE12L,C) 23,341
    • 1 $0.86
    • 10 $0.86
    • 100 $0.86
    • 1000 $0.86
    • 10000 $0.1505
    		Buy Now

    Toshiba America Electronic Components 2SC2982BSBTE12L

    Electronic Component
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA 2SC2982BSBTE12L 980
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Toshiba America Electronic Components 2SC2982-C(TE12L,CF

    Bipolar Transistor (BJT)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip1Stop 2SC2982-C(TE12L,CF 1,100
    • 1 -
    • 10 -
    • 100 $1.35
    • 1000 $1.1
    • 10000 $1.1
    		Buy Now

    2SC2982 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC2982 Kexin Medium Power Amplifier Applications Original PDF
    2SC2982 Toshiba NPN Transistor Original PDF
    2SC2982 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SC2982 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC2982 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC2982 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC2982 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC2982 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SC2982 Toshiba Silicon NPN transistor for strobo flash applications and medium power amplifier applications Scan PDF
    2SC2982 Toshiba SOT-89 Transistors Scan PDF
    2SC2982 Toshiba SILICON NPN EPITAXIAL TYPE (PCT PROCESS) TRANSISTOR Scan PDF
    2SC2982-? Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC2982-A Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC2982A Toshiba Silicon NPN Transistor Scan PDF
    2SC2982-B Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC2982B Toshiba Silicon NPN Transistor Scan PDF
    2SC2982C Toshiba Silicon NPN Transistor Scan PDF
    2SC2982-D Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC2982D Toshiba Silicon NPN Transistor Scan PDF

    2SC2982 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smd transistor 2A

    Abstract: smd transistor MARKING 2A 2SA1314 2SC2982
    Text: Transistors SMD Type Audio Power Applications 2SA1314 Features Low Saturation Voltage : VCE sat = -0.5V (max) (IC = -2A, IB = -50mA) Small Flat Package Complementary to 2SC2982 Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-Base Voltage Parameter


    Original     		PDF 2SA1314 -50mA) 2SC2982 -10mA -50mA smd transistor 2A smd transistor MARKING 2A 2SA1314 2SC2982

    2SC2982

    Abstract: 2SA1314
    Text: 2SC2982 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2982 Storobo Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 140 (typ.), (VCE = 1 V, IC = 2 A)


    Original     		PDF 2SC2982 2SA1314 2SC2982 2SA1314

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Product specification 2SA1314 Features Low Saturation Voltage : VCE sat = -0.5V (max) (IC = -2A, IB = -50mA) Small Flat Package Complementary to 2SC2982 Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-Base Voltage Parameter VCBO -20


    Original     		PDF 2SA1314 -50mA) 2SC2982 -50mA

    2SA1314

    Abstract: 2SC2982
    Text: 2SC2982 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2982 Storobo Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 140 (typ.), (VCE = 1 V, IC = 2 A)


    Original     		PDF 2SC2982 2SA1314 2SA1314 2SC2982

    Untitled

    Abstract: No abstract text available
    Text: 2SC2982 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2982 Storobo Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 140 (typ.), (VCE = 1 V, IC = 2 A)


    Original     		PDF 2SC2982 2SA1314

    2SA1314

    Abstract: 2SC2982
    Text: 2SC2982 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC2982 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm 直流電流増幅率が高くリニアリティが優れています。 : hFE (1) = 140~600 (VCE = 1 V, IC = 0.5 A)


    Original     		PDF 2SC2982 2SA1314 SC-62 20070701-JA 2SA1314 2SC2982

    2SA1314

    Abstract: 2SC2982
    Text: 2SC2982 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2982 Storobo Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 140 (typ.), (VCE = 1 V, IC = 2 A)


    Original     		PDF 2SC2982 2SA1314 2SA1314 2SC2982

    2SC2982

    Abstract: 2SA1314 jeita sc-62
    Text: 2SC2982 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC2982 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm 直流電流増幅率が高くリニアリティが優れています。 : hFE (1) = 140~600 (VCE = 1 V, IC = 0.5 A)


    Original     		PDF 2SC2982 2SA1314 SC-62 2SC2982 2SA1314 jeita sc-62

    2SA1314

    Abstract: 2SC2982
    Text: 2SC2982 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2982 Storobo Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 140 (typ.), (VCE = 1 V, IC = 2 A)


    Original     		PDF 2SC2982 2SA1314 2SA1314 2SC2982

    D marking amplifier

    Abstract: smd transistor 2A MARKING 2A smd 2a transistor SMD MARKING 2a smd transistor MARKING 2A 2SA1314 2SC2982 smd Amplifier marking 420
    Text: Transistors SMD Type Medium Power Amplifier Applications 2SC2982 Features Low Saturation Voltage : VCE sat = 0.5V (max) (IC = 2A, IB = 50mA) Small Flat Package Complementary to 2SA1314 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage


    Original     		PDF 2SC2982 2SA1314 D marking amplifier smd transistor 2A MARKING 2A smd 2a transistor SMD MARKING 2a smd transistor MARKING 2A 2SA1314 2SC2982 smd Amplifier marking 420

    2SC4793 2sa1837

    Abstract: 2sC5200, 2SA1943, 2sc5198 2sC5200, 2SA1943 transistor 2SA2060 power transistor npn to-220 2sc5198 equivalent transistor 2SC5359 2SC5171 transistor equivalent NPN Transistor
    Text: Part Number 2SA2058 Y 2SA1160 N 2SC2500 N 2SA1430 N 2SC3670 N 2SA1314 Y 2SC2982 Y 2SC5755 Y 2SA2066 Y 2SC5785 Y TPC6602 Y TPC6501 Y 2SA1802 Y 2SC4681 Y 2SC4682 N 2SC4683 N 2SC4781 N 2SC5713 Y TPC6D03 Y 2SA2065 Y 2SC5784 Y 2SA2069 Y 2SC5819 Y 2SA2061 Y 2SA2059 Y


    Original     		PDF 2SA2058 2SA1160 2SC2500 2SA1430 2SC3670 2SA1314 2SC2982 2SC5755 2SA2066 2SC5785 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 2sC5200, 2SA1943 transistor 2SA2060 power transistor npn to-220 2sc5198 equivalent transistor 2SC5359 2SC5171 transistor equivalent NPN Transistor

    2SA1314

    Abstract: 2SC2982
    Text: 2SC2982 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2982 Storobo Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 140 (typ.), (VCE = 1 V, IC = 2 A)


    Original     		PDF 2SC2982 2SA1314 2SA1314 2SC2982

    Untitled

    Abstract: No abstract text available
    Text: 2SA1314 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1314 Unit: mm Strobe Flash Applications Audio Power Applications • High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.), (VCE = －1 V, IC = −4 A)


    Original     		PDF 2SA1314 2SC2982

    2SC2982

    Abstract: No abstract text available
    Text: TO SHIBA 2SC2982 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2982 Unit in mm STOROBO FLASH APPLICATIONS M EDIUM PO W ER AM PLIFIER APPLICATIONS 1.6 M AX — 1.7MAX. • High DC Current Gain and Excellent hpg Linearity 0.4 ±0.05 t t - : hFE (1) = 140-600 (Vce = IV, Ie = 0.5A)


    OCR Scan     		PDF 2SC2982 250mm2x0 2SC2982

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SC2982 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2982 U nit in mm STOROBO FLASH APPLICATIONS M EDIUM PO W ER AM PLIFIER APPLICATIONS 1.6MAX —J— 1.7MAX. • High DC Current Gain and Excellent hjnE Linearity 0.4 ±0.05


    OCR Scan     		PDF 2SC2982

    2SC2982

    Abstract: marking sc-62 cj
    Text: TO SH IBA 2SC2982 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2982 Unit in mm STOROBO FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS 1.6 MAX. 4.6 MAX. • • • • 1.7MAX. High DC Current Gain and Excellent hjpg Linearity : hFE (1) = 140-600 (V ce = IV, Ie = 0.5A)


    OCR Scan     		PDF 2SC2982 2SC2982 marking sc-62 cj

    2SC2978

    Abstract: 2SC2936 2SC2950 2SA1227 2SC2954 2SC2918 2SC2932 2SC2933 2SC2936H 2SC2941
    Text: - 140 - Ta=25?C 1*EP(àTc=25‘1C M 2SC2932 2SC2933 2SC2936 2SC2936H 2SC2941 2SC2944 2SC2946 2SC2946(1) 2SC2949 2SC2950 2SC2951 2SC2952 2SC2953 2SC2954 2SC2958 2SC2959 2SC296Ö 2SC2964 2SC2965 2SC2975 2SC2976 2SC2977 2SC2978 2SC2979 2SC2981 2SC2982 2SC2983


    OCR Scan     		PDF 2SC2932 2SC2933 2SC2936 2SC2936H 2SC2941 2SC2944 2SC2946 2SC2978 O-220ABB 2SC2978 2SC2950 2SA1227 2SC2954 2SC2918 2SC2932 2SC2933

    2SC2982

    Abstract: No abstract text available
    Text: SILICO N NPN EPITAXIAL T Y P E 2SC2982 Unit in mm STO RO BO FLASH APPLICATIONS. M E D IU M PO W ER AM PLIFIER APPLICATIONS. • • • • High DC Current Gain and Excellent hpE Linearity : hpEd = 140~600 Vc e = IV, Iq = 0.5A) : hFE(2) = 70(Min.), 140(Typ.) (VCE = IV, I q = 2A)


    OCR Scan     		PDF 2SC2982 250mm2 2SC2982

    2SC2982

    Abstract: No abstract text available
    Text: TOSHIBA 2SC2982 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2982 Unit in mm STOROBO FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS 1.6 MAX. 4.6 MAX. 1.7MAX. • 0.4 ±0.05 High DC Current Gain and Excellent hjpg Linearity : hFE (1 ) = 140-600 (V ce = IV, Ie = 0.5A)


    OCR Scan     		PDF 2SC2982 2SC2982

    ir131

    Abstract: No abstract text available
    Text: TOSHIBA 2SC2982 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm STOROBO FLASH APPLICATIONS M EDIUM PO W ER AM PLIFIER APPLICATIONS 1.6 M A X 4.6 M A X . • 1.7 M A X High DC Current Gain and Excellent hjrg Linearity : hFE (1) = 140-600 (VCE = IV, IC = 0.5A)


    OCR Scan     		PDF 2SC2982 ir131

    Untitled

    Abstract: No abstract text available
    Text: POWER M INI PACKAGE S E R IES ^ ! SOT-89 a.î'VîYw; 'S T T ITT Application Pc * Mounted on ceramic substratq o f 250mmJ x 0.8mm v CEO >C Pc PC* V) (A) (W) (W) 1.5 0.5 1 h FE Type No. NPN PNP f t TYP. v CE(sat) M AX- V CE >C 'c 'b V CE •e (V) Im A l


    OCR Scan     		PDF OT-89 250mmJ 2SC2883 2SC2884 2SC2873 2SC2982 2SA1203 2SA1204 2SA1213 2SA1314

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TENTATIVE TA8302F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA 8302F MOTOR DRIVER FOR CAMERA TA8302F is Multi Chip 1C incorporates 6 low saturation discrete transistors which equipped bias resistor and FreeWheeling diode. This 1C is suitable for a camera use motor drive


    OCR Scan     		PDF TA8302F 8302F TA8302F SSOP16 600mA RN5006 300mA 2SA1362 2SC2982

    2SC3941A

    Abstract: c3277 2SC3531 2sc3358 2SC3924 2SC3532 2sc3225 2SC3356 2sc3691 2SC3737
    Text: - m % tt Type No. € Manuf. 2SC 3718 = * SANYO JK S TOSHIBA fé T 2SC2791 2SC 3720 fé T 0 Sl □-A 2SC3608 2SC 3722 2SC 3723 S± £ 2SC 3724 *± w i 2SC 3725 ^ 2SC 3726 J' =~ = = s s m æ s i à m / m. 2SC 3727 2SC 3728 2SC 37 29 y 2SC 3730 2SC 37 3 ! 2SC 3732


    OCR Scan     		PDF 2SC3142 2SC3735 2SC24Q4 2SC2791 2SC3737 2SC3738 2SC3608 2SC3358 2SC3791 2SC3143 2SC3941A c3277 2SC3531 2sc3358 2SC3924 2SC3532 2sc3225 2SC3356 2sc3691 2SC3737