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    2SC 102 Search Results

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    2SC 102 Price and Stock

    Kyocera AVX Components 1812SC102MAT1A

    CAP CER 1000PF 1.5KV X7R 1812
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    DigiKey 1812SC102MAT1A Reel 1,000
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    Avnet Americas 1812SC102MAT1A Reel 14 Weeks 1,000
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    Newark 1812SC102MAT1A Reel 1,000
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    • 10000 $0.426
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    Kyocera AVX Components 1812SC102ZAT1A

    CAP CER 1000PF 1.5KV X7R 1812
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    DigiKey 1812SC102ZAT1A Reel 2,000
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    Kyocera AVX Components 1812SC102KA11A

    Cap Ceramic 0.001uF 1500V X7R 10% SMD 1812 125?C T/R - Tape and Reel (Alt: 1812SC102KA11A)
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    1812SC102KA11A Reel 1,000
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    Kyocera AVX Components 1812SC102KAZ1A

    R102 HIGH VOLT - Tape and Reel (Alt: 1812SC102KAZ1A)
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    Avnet Americas 1812SC102KAZ1A Reel 12 Weeks 1,000
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    Kyocera AVX Components 1812SC102MAZ1A

    R102 HIGH VOLT - Tape and Reel (Alt: 1812SC102MAZ1A)
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    Avnet Americas 1812SC102MAZ1A Reel 12 Weeks 1,000
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    2SC 102 Datasheets (91)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC102 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC102 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC102 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC102 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SC102 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC102 Unknown Vintage Transistor Datasheets Scan PDF
    2SC102 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC102 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC102 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC102 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC102 Unknown Cross Reference Datasheet Scan PDF
    2SC1020 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC1020 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC1020 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC1020 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC1020 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC1021 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC1021 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC1021 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC1021 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    2SC 102 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SC521A

    Abstract: 2sc1684 2SC1359 2SC1687 2SC2229 2SC2258 2SC4455 C2258 2SC549 2SC102
    Text: - * * * * * * * * * * * * * * * * * * * * * * * * * * * S € Type No. 2SC 64 2SC 65 *' 2SC 66 2SC 67 2SC 68 2SC 69 2SC 70 2SC 71 2SC 72 2SC 73 2SC 74 2SC 75 ^ 2SC 76 s 2SC 77 2SC 78 2SC 79 ; 2SC 80 /2SC 81 2SC 82 2SC 83 2SC 84 2SC 85 2SC 86 2SC 92 2SC 95


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    2SC2258 2SC2229 2SC4455 2SC2230 C2258 2SC521A 2sc1684 2SC1359 2SC1687 2SC2229 2SC2258 2SC4455 C2258 2SC549 2SC102 PDF

    sc 1046

    Abstract: 2SD350 2SC 1026 2SC1957 mitsubishi 2sc 1018 2sc943 2SD226A 2SC2036 2SD371 2SC763
    Text: - 104 - m « Type No. tt € Manuf. * 2SC 1014 * 2SC 1015 — • z * 2SC 1016 * 2SC 1017 ^ * * 2SC 1018— ^ h 2SC 1021 z * 2SC 1022 = * * 2SC 1023 * 2SC 1025 * * * 2SC 1026 = .E ^ £ SANYO 2SD612 m m IC TOSHIBA HITACHI ÍL 2SC790 2SC998 2SC2221 2SC2036 s


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    2SD612 2SC790 2SC1226A 2SD1380 2SC2183 2SC2083 2SC2993 2SC1968A 2SC998 2SC2221 sc 1046 2SD350 2SC 1026 2SC1957 mitsubishi 2sc 1018 2sc943 2SD226A 2SC2036 2SD371 2SC763 PDF

    2SC3480

    Abstract: 2SC3479 2SC3675 2SC3676
    Text: 2SC3675 2 SCI 7 5 5 2 SCI 7 5 6 2 SCI 7 5 7 2SC367 6 2 SB 1 0 3 7 2 SDÌ 4 5 9 2 SAI 0 1 1 2SC2344 2 SD3 8 6A 2 SD3 8 7A 2SD 38 6 2 SD3 8 7 2 SD 8 23 2 SDÌ 1 5 9 2SC 3 18 9 2SC3173 2SC 3 174 2 SC 3 175 2SC 3176 2SC3589 2SC3590 2SC3591 10220 10220 10220 10220


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    2SC3675 2SC1755 2SC1756 2SC1757 2SC3676 2SB1037 2SD1459 2SA1011 2SC2344 2SD386A 2SC3480 2SC3479 PDF

    3182N

    Abstract: 2sd4242 b1375 A1015 2482S 2sc 1091 1S1658 1S2452 2Sc2074 C1172B
    Text: • TO BE DISCONTINUED T Y P E L IS T 1 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e N o. 0 4 A Z 2 .0 —3.6 0 2 C Z 2 .0 -3 .6 2SC 512 2SC 3421 2SC 2754 - 0 5 A Z 2 .2 - 3 .6


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    2SC387A 2SC1815 2SC2347 T2456 2460B 2SC2461 2461B 2SC2481 2SC2531 2SC3281 3182N 2sd4242 b1375 A1015 2482S 2sc 1091 1S1658 1S2452 2Sc2074 C1172B PDF

    2SD1966

    Abstract: 2SD1255M 2SB maintenance IMB6 2SC2808
    Text: h -7 > y 7, $ /Transistors h z 7 > y Z $ $ H n h —W h 7 > y ^ ^ i p n — f t ü / T r a n s is t o r s Summary • h 7 v 3. $ /Transistors 2SA/2SB/2SC/2SC/2SD Type V ceo (V ) fT(M H z) Cob(pF) hFE Package Page 6.5 82-390 FTR 75 Icm - 1 .5 A 300 200 5.5


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    2SA785 2SA790 2SA790M 2SA806 2SA821 2SA825 2SA825S 2SA83Û 2SA830S 2SA854 2SD1966 2SD1255M 2SB maintenance IMB6 2SC2808 PDF

    3sk fet

    Abstract: transistor 2sk 4007F 2sk711 2SC388A S3275 2sk241 3SK257 transistor 2sk 161 2SK type
    Text: 2. C H A R A C T E R IST IC S C H A R T 2.1 TRANSISTORS FOR TV TUNER MAX V e to APPLICATION E L E C T R IC A L C H A R A C T E R IS T IC S R A T IN G S le M T Y P . Pc Vce V CE V ) |m A | |mW) (V ) 2SC 362TM 40 50 2 5 0 30MIN 2SC 383TM 45 50 300 2SC388ATM


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    362TM 383TM 2SC388ATM 400MIN 2SC4317 2SC4322 3sk fet transistor 2sk 4007F 2sk711 2SC388A S3275 2sk241 3SK257 transistor 2sk 161 2SK type PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SC 3974 2SC3974 Silicon NPN Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching • Features • High sp eed switching • High collector-base voltage V Cbo • Wide area of safety operation (ASO)


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    2SC3974 001b5M PDF

    2SC2609

    Abstract: 2Sc260 transistor z ss
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2609 NPN EPITAXIAL PLANAR TY PE DESCRIPTION OUTLINE DRAWING M itsubishi 2SC 2609 is a silicon N PN epitaxial planar type transistor specifically deisgned for V H F power am plifier applications. Dim ensions in mm R1 FEATURES


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    2SC2609 2SC2609 G01fc 2Sc260 transistor z ss PDF

    transistor BD 680

    Abstract: bo680 B0678 BD878 BO676 bo67 D239 TRANSISTOR BD676 Q62702-D241 Q62702-D243
    Text: 2SC 3> m fl23SbüS QOQMBT'i 3 MSIEfi PNP Silicon Darlington Transistors T-33- •31 BD 676 BD 678 BD 680 SIEMENS AKTIENGESELLSCHAF143" Epibase power darlington transistors 40 W BD 676, BD 678, and BD 680 are monolithic PNP silicon epibase power darlington transistors


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    0235bQ5 T-33-31 676/BD BD676, BD678 BD680 BO676, BD678, transistor BD 680 bo680 B0678 BD878 BO676 bo67 D239 TRANSISTOR BD676 Q62702-D241 Q62702-D243 PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SC 4421 2SC4421 Silicon NPN Triple-Diffused Planar Type Package Dim ensions High Breakdown Voltage, High Speed Switching • Features U n it I mm 4.4m ax. 10.2m ax. 5.7m ax. • High speed sw itching jJ ' • High collector-base voltage ' V cb o


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    2SC4421 2sc442i PDF

    TRANSISTOR BC 137

    Abstract: BC107 characteristic BC 108 transistor transistor bc 102 TRANSISTOR BC 109 NT 101 bc108 b 108 b BC 107 transistor transistor bc 107
    Text: 2SC D • û23SbG5 OOGMOÛT T ■ S IE G ^ T -*?-// NPN Silicon Transistors SIEMENS A KTIEN G ESELLSCH A F IC 107 J C 108 - BC 109 B C 107, BC 108, and BC 109 are epitaxial NPN silicon planar transistors in T 0 18 metal case


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    23SbG5 Q62702-C680 Q60203-X107-A Q60203-X107-B Q60203-X108 Q60203-X108-A Q60203-X108-B Q60203-X108-C 60203-X109 Q60203-X109-B TRANSISTOR BC 137 BC107 characteristic BC 108 transistor transistor bc 102 TRANSISTOR BC 109 NT 101 bc108 b 108 b BC 107 transistor transistor bc 107 PDF

    Siemens 1736

    Abstract: 2sc 1740 TRANSISTOR equivalent QS 100 NPN Transistor 101S BCY66 Q60203-Y66 10-lmA Scans-00145246 Q004312
    Text: 2SC D m ISIEG 023SbQS Q0Q4312 ì NPN Silicon Planar Transistor SIEMENS AKTIEN6ESELLSCHAF BCY66 $12 BCY 66 is an epitaxial NPN silicon planar transistor in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistor is particularly provided for


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    0235bG5 Q004312 BCY66 Q60203-Y66 TcaseS45Â fi23Sb05 Q0QM31? 120Hz Siemens 1736 2sc 1740 TRANSISTOR equivalent QS 100 NPN Transistor 101S BCY66 Q60203-Y66 10-lmA Scans-00145246 Q004312 PDF

    2SC 3531

    Abstract: No abstract text available
    Text: T O SH IB A 2SC5092 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC 5092 Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Low Noise Figure, High Gain. NF= 1.8dB, |S2 1 el2= 9.5dB f=2GHz MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC


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    2SC5092 2SC 3531 PDF

    TRANSISTOR BC 157

    Abstract: BC181 transistor bc160 TRANSISTOR "BC 157" transistor 2sc 1586 transistor BC 55 transistor BC SERIES f15n transistor bc 102 BC161 transistor
    Text: 2SC D • û23SbOS 0004100 T_«SIE<S^ PNP Silicon Transistors SIEMENS . AKTIENGESELLSCHAF B c160 BC 161 BC 160 and BC 161 are epitaxial PNP silicon transistors in TO 39 case 5 C 3 DIN 41873 . The collector is electrically connected to the case. The transistors are intended for use as


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    23SbOS BC160 Q62702-C228 Q62702-C228-V6 Q62702-C228-V10 Q62702-C228-V16 Q62702-C228-P 160/BC140 Q62702-C228-S2 BC1611> TRANSISTOR BC 157 BC181 transistor bc160 TRANSISTOR "BC 157" transistor 2sc 1586 transistor BC 55 transistor BC SERIES f15n transistor bc 102 BC161 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC5085 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC 508 5 V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure, High Gain. N F =l.ldB , |S2 1 el2= lldB f=lGHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage


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    2SC5085 V7-j250 PDF

    KJE transistor

    Abstract: KJE 17 transistor NT 101 transistor AC151 AC151 transistor kje KJE ZO transistor ac 151 k 151 transistor Q60103-X151-F1
    Text: 2SC D • fi235bQS 0004035 ISIE6 AC 151 AC 151 r PNP Germanium Transistors SIEMENS AKTIENGESELLSCHAF C 04035 T- 0 9 - U Not for new design for AF input and driver stages of medium performance AC 151 and AC 151 r are alloyed germanium PNP transistors in 1A 3 DIN 41871 case


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    0235bOS Q60103-X151-D Q60103-X151-D1 Q60103-X151-E Q60103-X151-E1 Q60103-X151-F Q60103-X151-F1 Q60103-X151-G Q62901-B1 AC151, KJE transistor KJE 17 transistor NT 101 transistor AC151 AC151 transistor kje KJE ZO transistor ac 151 k 151 transistor PDF

    transistor k 975

    Abstract: c 879 transistor afe 1000 BD880 darlington bd 876 BD876 d966 transistor bd 975 transistor BD878 BD 875
    Text: 2SC » • 023SbOS 0QGH421 3 ■ S I E 6 - ' NPN Silicon Planar Darlington Transistors SIEMENS AKTIEN6ESELLSCHAF 21 T-33-29 BD 875 BD 877 BD 879 ° BD 875, BD 877, and BD 879 are epitaxial NPN silicon planar darlington transistors in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . These darlington transistors


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    023SbOS T-33-29 Q62702-D902 Q62702-D903 Q62702-D904 Q62902-B63 Q62902-B62 25imi BD977 transistor k 975 c 879 transistor afe 1000 BD880 darlington bd 876 BD876 d966 transistor bd 975 transistor BD878 BD 875 PDF

    D965

    Abstract: b098 bd98 d965 hfe BD976 BD980 Q62702-D963 Q62702-D965 Q62702-D967 QQQ4430
    Text: 2SC » • 0235bDS Q0DMM2T fl « S I E G ^ PNP Silicon Darlington Transistors BD 976 BD 978 SIEMENS AKTIEN GE SEL LSC HA F 04429 ßD 98Q BD 976, BD 978, and BD 9 8 0 are epitaxial PNP silicon planar darlington transistors in plastic package similar to TO 202. These darlington transistors are designed for relay


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    235bQS Q62702-D963 Q62702-D965 Q62702-D967 fl23SbOS QQQ4432 0443Z BD976 T-33-31 BD980 D965 b098 bd98 d965 hfe BD980 Q62702-D967 QQQ4430 PDF

    3055 transistor

    Abstract: 2N3055 M 3055 power transistor transistor 3055 e 3055 t 3055 npn power transistor 3055 on 3055 j 3055 power transistor IN 3055
    Text: 2SC T> m flS3SbOS D004T11 * mZIZG . T ~ 2 3 -/ 3 NPN Transistor for Powerful A F Output Stages 2 N 3055 - SIEMENS AKTIENGESELLSCHAF-2 N 3055 is a single diffused NPN silicon transistor in TO 3 case 3 A 2 DIN 41872). The collector is electrically connected to the case. The transistor is particularly suitable for


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    D004T11 Q62702-U58 B--01 fl23Sb05 A23SbDS B--03 3055 transistor 2N3055 M 3055 power transistor transistor 3055 e 3055 t 3055 npn power transistor 3055 on 3055 j 3055 power transistor IN 3055 PDF

    2SC3611

    Abstract: No abstract text available
    Text: P o w e r T ra n s is to rs 2SC 3611 2SC3611 Silicon N P N Expitaxial Planar Type Video Am plifier Package Dim ensions • Features High transition frequency f-r • Small collector output capacitance (C„b) • Wide current range ' . I Absolute. M axim um Ratings (T a = 2 5 °C )


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    2SC3611 100x100x2 2SC3611 PDF

    2SC4820

    Abstract: 2SC402C 2sa860 2SC4503 2SA1663 2SC3858 2SA1494 2SC4517 a1695 2SC4886 2SA1666
    Text: • 2SC type Note: tLA PT * Full-Mold Absolute Maxwnun Ratings iTe=s25'C 2SC2023 2SC2837 Pc VefO W ) VCBO (V) 40 300 300 O o Type No. 150 150 (V ) Electrical Characteristic!» {Ta=25C jjjjjB I hre fr Thermal Resistance \MHi> {X :m • Dam m A o r W ln S r n a


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    2SC2023 2SC2837 2SC2921 2SC2922 2SC3179 2SC3263 2SC3264 2SC3284 2SC3519 -----2SC3519A 2SC4820 2SC402C 2sa860 2SC4503 2SA1663 2SC3858 2SA1494 2SC4517 a1695 2SC4886 2SA1666 PDF

    Transistor BSX 47-10

    Abstract: Transistor BSX 45-10 7CW Transistors S1553 7CW 02 Q60218-X45-V6 BSX 45-10 BSX45 BSX47 Transistor NF 45-10
    Text: IS I E G 2SC D • öSBSfciQS DDQ4ÖQ7 i NPN Silicon Planar Transistors Y - 1 * - '* BSX45 BSX46 BSX47 ~SIEMENS AKTIENGESELLSCHAF BSX 45, BSX 46, and BSX 47 are epitaxial NPN silicon planar transistors in TO 39 case 5 C 3 DIN 41873 . Their collectors are electrically connected to their cases. The transistors


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    BSX45 BSX46 BSX47 Q60218-X45 Q60218-X45-V6 Q60218-X45-V10 Q60218-X45-V16 Q60218-X46 Q60218-X46-V6 Q60218-X46-V10 Transistor BSX 47-10 Transistor BSX 45-10 7CW Transistors S1553 7CW 02 Q60218-X45-V6 BSX 45-10 BSX47 Transistor NF 45-10 PDF

    Q4431

    Abstract: No abstract text available
    Text: 2SC » • û235bQS 000442*1 fl ■ SIEficÄ_., PNP Silicon Darlington Transistors BO 976 BD 978 SIEMENS AKTIENGESELLSCHAF 0 ^ 2 9 ßD 980 B D 976, BD 978, and BD 9 8 0 are epitaxial PNP silicon planar darlington transistors in plastic package similar to TO 202. These darlington transistors are designed for relay


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    235bQS Q4431 T-33-31 100oC; fl235bQS QQQ4432 j-33-31 BD976 BD978 BD980 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC5097 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC 5097 Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • + 0.2 Low Noise Figure, High Gain. N F = 1.8dB, |S 2 1 el2 = 10dB f=2GHz 2 .9 - 0.3 TT -a MAXIMUM RATINGS (Ta = 25°C)


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    2SC5097 PDF