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    A1015 Search Results

    A1015 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPS7A1015PDSER Texas Instruments 300-mA low-IQ ultra-low-dropout (LDO) (70 mV at 300 mA) linear regulator 6-WSON -40 to 125 Visit Texas Instruments Buy
    TPS7A1015PYKAR Texas Instruments 300-mA low-IQ ultra-low-dropout (LDO) (70 mV at 300 mA) linear regulator 5-DSBGA -40 to 125 Visit Texas Instruments Buy
    TPS7A1015PDSET Texas Instruments 300-mA low-IQ ultra-low-dropout (LDO) (70 mV at 300 mA) linear regulator 6-WSON -40 to 125 Visit Texas Instruments Buy
    UE36A10152000T Amphenol Communications Solutions 56G QSFP-DD single SMT connector, GXT plating Visit Amphenol Communications Solutions
    UE36A10153000T Amphenol Communications Solutions 56G QSFP-DD single SMT connector, Gold plating Visit Amphenol Communications Solutions

    A1015 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Type PDF
    A1015 Fairchild Semiconductor LOW FREQUENCY AMPLIFIER Original PDF
    A1015 Hi-Sincerity Mocroelectronics PNP EPITAXIAL PLANAR TRANSISTOR Original PDF
    A1015 Panasonic Photo Interrupters Original PDF
    A1015 Philips Semiconductors PNP general purpose transistor Original PDF
    A1015 Unisonic Technologies PNP EPITAXIAL SILICON TRANSISTOR Original PDF
    A1015 Weitron PNP General Purpose Transistors Original PDF
    A1015 Micro Electronics PNP SILICON TRANSISTOR Scan PDF
    A1015 Toshiba PNP EPITAXIAL TYPE(AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER, DRIVER STAGE AMPLIFIER) Scan PDF
    A1015LT1 Jiangsu Changjiang Electronics Technology TRANSISTOR PNP Original PDF
    A1015LT1 Weitron TRANSISTOR (PNP) Original PDF
    A1015LT1-SOT-23 Jiangsu Changjiang Electronics Technology TRANSISTOR PNP Original PDF
    SF Impression Pixel

    A1015 Price and Stock

    TE Connectivity W54-XB1A4A10-15

    CIR BRKR THRM 15A 250VAC
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    DigiKey W54-XB1A4A10-15 Tray 1,731 1
    • 1 $5.54
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    • 100 $3.3406
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    Avnet Americas W54-XB1A4A10-15 Tube 1,900 19 Weeks 1
    • 1 $1.60857
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    Mouser Electronics W54-XB1A4A10-15 278
    • 1 $5.53
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    TTI W54-XB1A4A10-15 Tray 230 2
    • 1 -
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    • 100 $2.95
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    Jamicon Corporation SYA10-15WH-ET

    1 MM W TO B CONNECTOR 15P HEADER
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    DigiKey SYA10-15WH-ET Reel 1,500 1,500
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    Jamicon Corporation SYA10-15HG

    1 MM W TO B CONNECTOR 15P HOUSIN
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    DigiKey SYA10-15HG Bulk 1,000 1
    • 1 $0.22
    • 10 $0.186
    • 100 $0.1434
    • 1000 $0.0993
    • 10000 $0.09102
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    Bourns Inc PTV09A-1015U-B203

    POT 20K OHM 1/20W CARBON LINEAR
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    DigiKey PTV09A-1015U-B203 Tray 973 1
    • 1 $1.36
    • 10 $1.197
    • 100 $0.9974
    • 1000 $0.73806
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    Avnet Americas PTV09A-1015U-B203 Tray 14 Weeks 1,000
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    Mouser Electronics PTV09A-1015U-B203 1,175
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    Onlinecomponents.com PTV09A-1015U-B203
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    Master Electronics PTV09A-1015U-B203
    • 1 -
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    • 1000 $0.581
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    Century Spring Corp A10-15CS

    COMP O= .156,L= 1.63,W= .015
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey A10-15CS Box 593 1
    • 1 $1.64
    • 10 $1.64
    • 100 $1.5562
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    Find more A1015 price and stock on Findchips.com

    A1015 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A1015 gr

    Abstract: transistor A1015 GR A1015 transistor A1015 a1015 transistor Transistor TO-92 A1015 A1015 y A1015 PNP TRANSISTOR A1015 TO92 equivalent transistor A1015
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR PNP TO-92 1.EMITTER FEATURES z Power dissipation 2.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter VCBO 3.BASE Value Units


    Original     		PDF A1015 -100mA, -10mA 30MHz A1015 gr transistor A1015 GR A1015 transistor A1015 a1015 transistor Transistor TO-92 A1015 A1015 y A1015 PNP TRANSISTOR A1015 TO92 equivalent transistor A1015

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 A1015 TRANSISTOR Plastic-Encapsulate Transistors PNP SOT-23 FEATURES High voltage and high current Excellent hFE Linearity Low niose Complementary to C1815 z z z z 1. BASE 2. EMITTER 3. COLLECTOR


    Original     		PDF OT-23 A1015 C1815 -10mA 30MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR（ PNP ） TO—92 1.EMITTER FEATURES 2.COLLECTOR Power dissipation PCM : 0.4 W（Tamb=25℃） Collector current ICM : -0.15 A Collector-base voltage


    Original     		PDF A1015 30MHz 270TYP 050TYP

    Untitled

    Abstract: No abstract text available
    Text: TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR PNP TO—92 1.EMITTER FEATURES Power dissipation 2.COLLECTOR 3.BASE MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO Parameter Value Units Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage


    Original     		PDF A1015 -100mA, -10mA 30MHz

    A1015LT1

    Abstract: A1015L
    Text: A1015LT1 A1015LT1 TRANSISTOR PNP * “G” Lead(Pb)-Free SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25 ) 2. 4 1. 3 TJ, Tstg: -55 0. 95 0. 4 2. 9 Collector current ICM: -0.15 A Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range


    Original     		PDF A1015LT1 OT-23 -10mA 30MHz A1015LT1 A1015L

    transistor BA sot-23

    Abstract: A1015LT1 pnp transistor A1 sot-23 SOT-23 marking BA A1015 ba marking sot-23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors A1015LT1 SOT—23 ） TRANSISTOR（ PNP 1. BASE 2. EMITTER 3. COLLECTOR FEATURES ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Symbol １．０ Power dissipation PCM :


    Original     		PDF OT-23 A1015LT1 OT--23 -100A 30MHz 037TPY 950TPY 550REF 022REF transistor BA sot-23 A1015LT1 pnp transistor A1 sot-23 SOT-23 marking BA A1015 ba marking sot-23

    A1015 gr

    Abstract: A1015 y transistor A1015 A1015 A1015 TO92 A1015 equivalent br a1015 A1015 DATASHEET A1015 gr W A1015-pnp
    Text: A1015 PNP General Purpose Transistors TO-92 P b Lead Pb -Free 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 MAXIMUM RATINGS* (TA=25°C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage VCEO -50 V Collector-Base Voltage VCBO -50 V Emitter-Base Voltage


    Original     		PDF A1015 30MHz 14-Feb-06 270TYP A1015 gr A1015 y transistor A1015 A1015 A1015 TO92 A1015 equivalent br a1015 A1015 DATASHEET A1015 gr W A1015-pnp

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors A1015LT1 TRANSISTOR PNP SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current -0.15 A ICM: Collector-base voltage


    Original     		PDF OT-23 A1015LT1 OT-23 -10mA 30MHz

    A1015 BA

    Abstract: A1015 sot-23 c1815 pnp A1015 PNP TRANSISTOR A1015 transistor pnp a1015 marking BA sot-23 a1015 transistor c1815 SOT-23 transistor A1015
    Text: A1015 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — — High voltage and high current VCEO:=-50V(min.),IC=-150mA(max.) Excellent hFE Linearity hFE (2)=80(Typ.) at VCE=-6V,IC=-150mA hFE (IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.) Low niose: NF=1dB(Typ.) at f=1KHz


    Original     		PDF A1015 OT-23 OT-23 -150mA C1815 -100u -10mA 30MHz A1015 BA A1015 sot-23 c1815 pnp A1015 PNP TRANSISTOR A1015 transistor pnp a1015 marking BA sot-23 a1015 transistor c1815 SOT-23 transistor A1015

    a1015 transistor

    Abstract: transistor A1015 GR transistor A1015 A1015 PNP TRANSISTOR a1015 A1015 gr Transistor TO-92 A1015 transistor pnp a1015 a1015 TRANSISTOR pnp br a1015
    Text: A1015 Transistor PNP TO-92 1.EMITTER 2.COLLECTOR 3.BASE Features Power dissipation MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage


    Original     		PDF A1015 -100A, -100mA, -10mA 30MHz a1015 transistor transistor A1015 GR transistor A1015 A1015 PNP TRANSISTOR a1015 A1015 gr Transistor TO-92 A1015 transistor pnp a1015 a1015 TRANSISTOR pnp br a1015

    A1015 transistor

    Abstract: transistor A1015 br a1015 Transistor TO-92 A1015 transistor A1015 GR A1015 A1015 PNP TRANSISTOR A1015 gr A1015 y pnp a1015
    Text: TO-92 Plastic-Encapsulate Transistors PNP A1015 A1015 TRANSISTOR (PNP) TO-92 1. EMITTER FEATURES 2. COLLECTOR Power dissipation 3. BASE PCM: 0.4 W (Tamb=25℃) Collector current ICM: -0.15 A Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range


    Original     		PDF A1015 -100mA, -10mA 30MHz A1015 transistor transistor A1015 br a1015 Transistor TO-92 A1015 transistor A1015 GR A1015 A1015 PNP TRANSISTOR A1015 gr A1015 y pnp a1015

    Untitled

    Abstract: No abstract text available
    Text: SOT-23 Plastic-Encapsulate Transistors A1015LT1 TRANSISTOR PNP SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current -0.15 A ICM: Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range


    Original     		PDF OT-23 A1015LT1 OT-23 -10mA 30MHz

    transistor A1015 GR

    Abstract: br a1015 transistor A1015 a1015 transistor A1015 A1015 gr A1015 Y Transistor TO-92 A1015 A1015 equivalent A1015 PNP TRANSISTOR
    Text: A1015 A1015 TRANSISTOR PNP TO-92 1. EMITTER FEATURES 2. COLLECTOR Power dissipation 3. BASE PCM: 0.4 W (Tamb=25℃) Collector current ICM: -0.15 A Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55℃ to +150℃


    Original     		PDF A1015 -100mA, -10mA 30MHz transistor A1015 GR br a1015 transistor A1015 a1015 transistor A1015 A1015 gr A1015 Y Transistor TO-92 A1015 A1015 equivalent A1015 PNP TRANSISTOR

    A1015

    Abstract: A1015GR A1015Y A1015-Y A1015-GR transistor a1015y A1015 gr A1015-GR H transistor A1015 A1015 equivalent
    Text: A1015 -0.15A , -50V PNP Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES Power Dissipation G H 1Emitter 2Collector 3Base J CLASSIFICATION OF hFE A Product-Rank


    Original     		PDF A1015 A1015-O A1015-Y A1015-GR 04-Mar-2011 -100mA, -10mA 30MHz A1015 A1015GR A1015Y A1015-Y A1015-GR transistor a1015y A1015 gr A1015-GR H transistor A1015 A1015 equivalent

    transistor A1015

    Abstract: A1015 A1015 PNP TRANSISTOR A1015 equivalent transistor pnp a1015 ic a1015 c1815 pnp A1015 DATASHEET c1815 pnp a1015
    Text: A1015 A1015 Silicon PNP Epitaxial Transistor Description: The A1015 is designed for audio frequency general purpose amplifier applications and driver stage amplifier applications Features: ●Excellent hFE Linearity ●Complementary to C1815 Chip Appearance


    Original     		PDF A1015 A1015 C1815 350um 350um 110um 110um 100um 100um transistor A1015 A1015 PNP TRANSISTOR A1015 equivalent transistor pnp a1015 ic a1015 c1815 pnp A1015 DATASHEET c1815 pnp a1015

    transistor C1815

    Abstract: C1815 A1015 npn c1815 transistor C1815 NPN Transistor NPN C1815 C1815 equivalent ic c1815 c1815 symbol npn TRANSISTOR c1815
    Text: C1815 C1815 Silicon NPN Epitaxial Transistor Description : The C1815 is designed for audio frequency general purpose amplifier applications and driver stage amplifier applications Features: ●Excellent hFE Linearity ●Complementary to A1015 Chip Appearance


    Original     		PDF C1815 C1815 A1015 350um 350um 110um 110um 100um 100um transistor C1815 A1015 npn c1815 transistor C1815 NPN Transistor NPN C1815 C1815 equivalent ic c1815 c1815 symbol npn TRANSISTOR c1815

    A1015

    Abstract: A1015 equivalent transistor A1015 GR transistor A1015 A1015 y A1015 y equivalent a1015 transistor A1015 PNP TRANSISTOR pnp transistor a1015 A1015 GR
    Text: A1015 TO-92 Plastic-Encapsulate Transistors Transistor PNP FEATURES Power dissipation o P CM :0.4 W (Tamb=25 C) Collector current I CM :-0.15 A Collector-base voltage V (BR)CBO :-50 V Operating and storage junction temperature range o o T J ,T stg :-55 C to +150 C


    Original     		PDF A1015 A1015 A1015 equivalent transistor A1015 GR transistor A1015 A1015 y A1015 y equivalent a1015 transistor A1015 PNP TRANSISTOR pnp transistor a1015 A1015 GR

    a1015 transistor

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR PNP TO-92 1.EMITTER FEATURES z Power dissipation 2.COLLECTOR 3.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO


    Original     		PDF A1015 -100mA, -10mA 30MHz a1015 transistor

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR PNP TO—92 1.EMITTER FEATURES Power dissipation 2.COLLECTOR 3.BASE MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO Parameter Value Units


    Original     		PDF A1015 -100mA, -10mA 30MHz

    A1015 sot-23

    Abstract: No abstract text available
    Text: WILLAS FM120-M A1015 THRU FM1200-M SOT-23 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features process design, excellent power dissipation offers TRANSISTOR• Batch


    Original     		PDF OT-23 OD-123+ FM120-M A1015 FM1200-M OT-23 OD-123H FM120-MH FM130-MH FM140-MH A1015 sot-23

    sa1015

    Abstract: A1015 gr A1015 GSA1015 GSC1815
    Text: CORPORATION G S A1015 ISSUED DATE :2004/07/09 REVISED DATE :2004/11/29B P NP E PITAX I AL P L ANAR TANSI STOR Description The A1015 is designed for use in driver stage of AF amplifier and general purpose applications. Features *Collector-Base Voltage: VCBO =-50V


    Original     		PDF A1015 2004/11/29B GSA1015 GSC1815 sa1015 A1015 gr A1015 GSC1815

    Untitled

    Abstract: No abstract text available
    Text: A1015LT1 A1015LT1 TRANSISTOR PNP SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25 ) 2. 4 1. 3 0. 4 0. 95 TJ, Tstg: -55 2. 9 Collector current ICM: -0.15 A Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range to +150


    Original     		PDF A1015LT1 OT-23 -10mA 30MHz

    UMA1015AM

    Abstract: rf power detector voltage doubler
    Text: Philips Semiconductors Objective specification Low-power dual frequency synthesizer for radio communications U M A1015AM FEATURES GENERAL DESCRIPTION • Two fully programmable RF dividers up to 1.1 GHz The A1015AM is a low-power dual frequency synthesizer for radio communications which operates in


    OCR Scan     		PDF UMA1015AM 711DB2fc. UMA1015AM rf power detector voltage doubler

    A1015

    Abstract: A1015 y A1015 PNP TRANSISTOR br a1015 pnp a1015
    Text: M C C TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR PNP FEATU R E S P cm; 0.4W (T a m b = 2 5 t) Icm: -0.15A /voltage V(BR)CBO: -5 0 V M S M M i a tofeltetoraga Junction temperature range Tj.Tstg: -55X2- to + 150°C ELECTRICAL CHARACTERISTICS (Tam b=25°C u n l e s s o t h e r w i s e


    OCR Scan     		PDF A1015 -55X2- A1015 A1015 y A1015 PNP TRANSISTOR br a1015 pnp a1015