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    Toshiba America Electronic Components 2SC3672-O(T2ASH,FM

    TRANS NPN 300V 0.1A MSTM
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    2SC367 Datasheets (124)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC367 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC367 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC367 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC367 Unknown Cross Reference Datasheet Scan PDF
    2SC367 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC367 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC367 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC367 Unknown Vintage Transistor Datasheets Scan PDF
    2SC367 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC367 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SC3670 Toshiba High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: MSTM; Number Of Pins: 3; Viewing Angle: radial taping; Publication Class: High Frequency Switching Power Transistor; Part Number: 2SA1430 Original PDF
    2SC3670 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3670 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC3670 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC3670 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC3670 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC3670 Toshiba Silicon NPN transistor for strobo flash applications and medium power amplifier applications Scan PDF
    2SC3670 Toshiba TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) Scan PDF
    2SC3670A Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3670A Toshiba Silicon NPN Epitaxial Type Transistor Scan PDF
    ...

    2SC367 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC3678

    Abstract: No abstract text available
    Text: Product Specification www.jmnic.com 2SC3678 Silicon NPN Power Transistors ESCRIPTION ・High Voltage Switching ・With TO-3PN package APPLICATIONS ・ Switching Regulator ・ General Purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base


    Original     		PDF 2SC3678 2SC3678

    2SC3678

    Abstract: transistor ,12v ,Ic 1A ,NPN transistor 12v 1A NPN transistor npn 12V 1A Collector Current
    Text: SavantIC Semiconductor Product Specification 2SC3678 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High voltage switching transistor APPLICATIONS ·Switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to


    Original     		PDF 2SC3678 2SC3678 transistor ,12v ,Ic 1A ,NPN transistor 12v 1A NPN transistor npn 12V 1A Collector Current

    2SC3676

    Abstract: ITR05795 ITR05797 ITR05798 VITR05796
    Text: Ordering number:ENN1801E NPN Triple Diffused Planar Silicon Transistor 2SC3676 900V/300mA High-Voltage Amplifier High-Voltage Switching Applications Applications Package Dimensions • High voltage amplifiers. · High-voltage switching applications. · Dynamic focus applications.


    Original     		PDF ENN1801E 2SC3676 00V/300mA 2010C 2SC3676] O-220AB 2SC3676 ITR05795 ITR05797 ITR05798 VITR05796

    2-7D101A

    Abstract: 2SA1432 2SC3672 C3672 Display Nixie
    Text: 2SC3672 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC3672 High-Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High breakdown voltage: VCBO = 300 V, VCEO = 300 V


    Original     		PDF 2SC3672 2SA1432. 2-7D101A 2SA1432 2SC3672 C3672 Display Nixie

    2-7D101A

    Abstract: 2SC3673 C3673
    Text: 2SC3673 東芝トランジスタ シリコンNPNエピタキシャル形 2SC3673 ○ スイッチング用 ○ ソレノイドドライブ用 単位: mm • 直流電流増幅率が高い。 • コレクタ•エミッタ間飽和電圧が低い。 : VCE sat = 0.5 V (最大)


    Original     		PDF 2SC3673 2-7D101A 2-7D101A 2SC3673 C3673

    2-7D101A

    Abstract: 2SC3673 C3673
    Text: 2SC3673 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3673 Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain : hFE = 500 min (IC = 400 mA) • Low collector-emitter saturation voltage : VCE (sat) = 0.5 V (max) (IC = 300 mA)


    Original     		PDF 2SC3673 2-7D101A 2SC3673 C3673

    C3671

    Abstract: No abstract text available
    Text: 2SC3671 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3671 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A)


    Original     		PDF 2SC3671 150HIBA C3671

    2SC3679

    Abstract: No abstract text available
    Text: 2SC3679 Silicon NPN Triple Diffused Planar Transistor High Voltage Switching Transistor 5(Pulse10) A µA 800min V hFE VCE=4V, IC=2A 10 to 30 19.9±0.3 IC VEB=7V IC=10mA 2.5 A VCE(sat) IC=2A, IB=0.4A 0.5max PC 100(Tc=25°C) W VBE(sat) IC=2A, IB=0.4A 1.2max


    Original     		PDF 2SC3679 Pulse10) 100max 800min 75typ 700mA MT-100 2SC3679

    2-7D101A

    Abstract: 2SC3673 C3673
    Text: 2SC3673 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3673 Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)


    Original     		PDF 2SC3673 2-7D101A 2SC3673 C3673

    2SC3679

    Abstract: transistor applications 2sc3679 transistor
    Text: Inchange Semiconductor Product Specification 2SC3679 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High voltage switching transistor APPLICATIONS ・For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base


    Original     		PDF 2SC3679 2SC3679 transistor applications 2sc3679 transistor

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3671 ST0R0B0 FLASH APPLICATIONS. MEDIUM POWER AMPLIFIER APPLICATIONS. Unit in ram . High DC Current Gain and Excellent hFE Linearity : hFE(l)=140~450 (VCE=2V, : h F E(2)=70(Min.) Ic =0.5A) (VC E=2V, IC=4A) . Low Saturation Voltage


    OCR Scan     		PDF 2SC3671 Q55-Q0S 10tnA,

    2SD2334

    Abstract: 2sc4814 2SD2076 2216y 2SD1546 2sd2190 2SD1930 2SD1755 2sc2562 2SC4062
    Text: - m. £ € Manuf. T y p e No. 2 SD 2174 fâ 2SD 2175 □— A 2SD 2176 - # h SANYO T 2SC4488 M 3E TO S H I B A m B NEC 2SC3677 2SD1593 2SC3665 2SD1312 B HITACHI ÎL * ± a FU JITSU tö T MATSUS H I T A z m MITSUBISHI T 2SD 2185 fe' T 2S0 2186 □— A 2SD 2187


    OCR Scan     		PDF 2SD2174 2SD2175 2SD2176 2SD2177 2SD2185 2SD2186 2SD2187 2SD2188 2SD2189 2SD2190 2SD2334 2sc4814 2SD2076 2216y 2SD1546 2SD1930 2SD1755 2sc2562 2SC4062

    Untitled

    Abstract: No abstract text available
    Text: Ordering num ber: EN 1800E _ 2SC3675 NPN Triple Diffused Planar Silicon Transistor High-Voltage Amp, High-Voltage Switching Applications A p p licatio n s • High-voltage amplifiers. • High-voltage switching applications. • Dynamic focus applications.


    OCR Scan     		PDF 1800E 2SC3675 2010C T0220AB 8-9202/4237AT/3195KI

    2-7D101A

    Abstract: 2SC3673
    Text: TOSHIBA 2SC3673 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC3673 Unit in mm SWITCHING APPLICTIONS SOLENOID DRIVE APPLICATIONS 7.1 MAX. 2.7MAX. • • High DC Current Gain : hjr^ = 500 Min. Low Saturation Voltage : VCE (sat) -0.5V (Max.) M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC3673 2-7D101A 2-7D101A 2SC3673

    2sc3714

    Abstract: 2SC3691 2SC3702 2SC3676 2SC3692 2SC3671 2SC3672 2SC3673 G1508 2SC3678
    Text: - 168 - S Ta=25cC, *EPfäTc=25°C} a s m. % 2SC3671 2SC3672 2SC3673 2SC3675 2SC3676 2SC3678 2SC3679 2SC3680 2SC3685 2SC3686 2SC3687 2SC3688 2SC3689 2SC3691 2SC3692 2SC3693 2SC3694 2SC370Q 2SC3701 2SC3702 2SC3704 2SC3705 2SC3707 2SC3708 2SC3709 2SC3710 2SC3714


    OCR Scan     		PDF 2SC3671 2SC3672 2SC3673 2SC3675 2SC3676 2SC3678 2SC3679 2S00MHz SC-59A) 2SC3707 2sc3714 2SC3691 2SC3702 2SC3676 2SC3692 2SC3671 2SC3672 G1508

    2-7D101A

    Abstract: 2SC3670
    Text: TO SH IBA 2SC3670 TOSHIBA TRANSISTOR STOROBO FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3670 Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS -iS-, 7.1 M A X • • High DC Current Gain and Excellent hjpE Linearity hjrE (1) —140—600


    OCR Scan     		PDF 2SC3670 2-7D101A 2SC3670

    2-7D101A

    Abstract: 2SC3670
    Text: TO SH IB A 2SC3670 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3670 Unit in mm STOROBO FLASH APPLICATIONS MEDIUM PO W ER AM PLIFIER APPLICATIONS • 7.1 M AX High DC Current Gain and Excellent hpg Linearity : hpE (i) = 140~600 : hFE(2) = 70 (Min.), 200 (Typ.)


    OCR Scan     		PDF 2SC3670 961001EAA2' 2-7D101A 2SC3670

    2SC3480

    Abstract: 2SC3479 2SC3675 2SC3676
    Text: 2SC3675 2 SCI 7 5 5 2 SCI 7 5 6 2 SCI 7 5 7 2SC367 6 2 SB 1 0 3 7 2 SDÌ 4 5 9 2 SAI 0 1 1 2SC2344 2 SD3 8 6A 2 SD3 8 7A 2SD 38 6 2 SD3 8 7 2 SD 8 23 2 SDÌ 1 5 9 2SC 3 18 9 2SC3173 2SC 3 174 2 SC 3 175 2SC 3176 2SC3589 2SC3590 2SC3591 10220 10220 10220 10220


    OCR Scan     		PDF 2SC3675 2SC1755 2SC1756 2SC1757 2SC3676 2SB1037 2SD1459 2SA1011 2SC2344 2SD386A 2SC3480 2SC3479

    2-7D101A

    Abstract: 2SC3671
    Text: TOSHIBA 2SC3671 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3671 STOROBE FLASH APPLICATIONS U nit in mm MEDIUM PO W ER AM PLIFIER APPLICATIONS 7.1 M AX. • High DC Current Gain and Excellent h p g Linearity : hpE (i) = 140~450 : h F E ( 2) = 70 (Min.)


    OCR Scan     		PDF 2SC3671 CYCLES30% 961001EAA2' 2-7D101A 2SC3671

    2-7D101A

    Abstract: 2SC3670
    Text: TO SH IBA 2SC3670 TOSHIBA TRANSISTOR STOROBO FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3670 Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS 7.1 MAX • • High DC Current Gain and Excellent hEE Linearity hEE (1) —140—600 ^FE (2) “ 70 (Min.), 200 (Typ.)


    OCR Scan     		PDF 2SC3670 2-7D101A 2SC3670

    High-Voltage Amplifiers

    Abstract: 2SC3675
    Text: Ordering num ber: EN1800E 2SC3675 NPN Triple Diffused Planar Silicon Transistor High-Voltage Amp, High-Voltage Switching Applications Applications • High-voltage amplifiers. • High-voltage switching applications. • Dynamic focuB applications. Features


    OCR Scan     		PDF EN1800E High-Voltage Amplifiers 2SC3675

    2-7D101A

    Abstract: 2SC3671
    Text: TOSHIBA 2SC3671 2SC3671 TO SHIBA TRANSISTOR STOROBE FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm M E D IU M POWER AMPLIFIER APPLICATIONS • 7.1 MAX. High DC Current Gain and Excellent hpg Linearity : ^FE (1) —140—450 : hFE(2) = 70 (Min.)


    OCR Scan     		PDF 2SC3671 CYCLED30% 961001EAA2' 2-7D101A 2SC3671

    2-7D101A

    Abstract: 2SC3670
    Text: TOSHIBA 2SC3670 TOSHIBA TRANSISTOR STOROBO FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3670 Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS • • 7.1 MAX High DC Current Gain and Excellent hpE Linearity : ^FE (1) —140—600 : hFE( 2 ) = ?0 (Min.), 200 (Typ.)


    OCR Scan     		PDF 2SC3670 961001EAA2' 2-7D101A 2SC3670

    2-7D101A

    Abstract: 2SC3673
    Text: TO SH IBA 2SC3673 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC3673 SWITCHING APPLICTIONS Unit in mm SOLENOID DRIVE APPLICATIONS 7.1 M A X • • High DC Current Gain : hjpg —500 Min. Low Saturation Voltage : VcE (sat) -0.5V (Max.) MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC3673 2-7D101A 2-7D101A 2SC3673