Transistor BFR 97
Abstract: Transistor BFR 39 transistor npn d 2058 Transistor BFR 35 Transistor BFR 98 Transistor BFR 38 Transistor BFR 80 Transistor BFR 91 K 2056 transistor Transistor BFR 79
Text: 2SC D • fl23SbOS Q0QMb74 T H S I E G NPN Silicon Transistor for Low-Noise RF Broadband Amplifiers and High-Speed Switching Applications BFR 35 A BFR 35 AR 0 '7 Z3 I - / S 2 N 6619 SIEMENS AKTIENGESELLSCHAF ’4 BFR 35 A is an epitaxial NPN silicon planar RF transistor in TO 2 3 6 plastic package
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fl23SbOS
Q0QMb74
2N6619,
023SbOS
00G4b77
BFR35A
2N6619
Transistor BFR 97
Transistor BFR 39
transistor npn d 2058
Transistor BFR 35
Transistor BFR 98
Transistor BFR 38
Transistor BFR 80
Transistor BFR 91
K 2056 transistor
Transistor BFR 79
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tca 335 A
Abstract: tca 765 TCA335A
Text: 47E ]> • fl23SbOS □□3L b4fl 5 ■ SIEG SIEMENS AKTIENGESELLSCHAF T -1 ^ - O lSingle Operational Amplifier with Darlington Input O TCA 332 TCA 335 Features • • • • • • • • • \ Bipolar 1C High input impedance Wide common-mode range Large supply-voltage range
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fl23SbOS
Q67000-A2272
Q67000-A227Ã
fl235b05
0034b5M
TCA335
tca 335 A
tca 765
TCA335A
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sab 8031a-p
Abstract: 8031a microcontroller Siemens SAB 8031 sab 8031a SAB 8051A-P 8031a
Text: SIEM EN S 47E D • fl23SbOS 0G2ÔÜ5Ô 0 I SI Ef i SIEMENS AKTIENGESELLSCHAF SAB 8051A/8031A Ext. Temp 8-Bit Single-Chip Microcontroller Extended Temperature Range: -4 0 *0 to +85°C -4 0 'C to +110*0 Mask-Programmable ROM SAB 8051A-12-P-T40/85 SAB 8051A-10-P-T40/110
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fl23SbOS
051A/8031A
051A-12-P-T40/85
051A-10-P-T40/110
031A-12-P-T40/85
031A-10-P-T40/110
-12-T40/85:
-10-T40/110:
16-Bit
fl235bQ5
sab 8031a-p
8031a microcontroller
Siemens SAB 8031
sab 8031a
SAB 8051A-P
8031a
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E3043
Abstract: E3062A
Text: fl23Sb05 0001337 4ñ0 S IE M E N S HITFET BTS 949 Smart Lowside Power Switch Features Product Summary • Logic Level Input Continious drain source • Input protection ESO On-state resistance • Thermal shutdown Current limitation • Overload protection
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23SbDS
235bOS
TQ220/5
Q67060-XX
GPT0S165
T0220/5
E3043
TQ220/5
E3062A
E3043
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transistor BD 430
Abstract: 0436L
Text: 2SC D • fl23Sb05 000435" 5 » S I E S - PNP Silicon Planar Transistor * BD 430 ', c r . 0 4 3 5 9 D SIEMENS AKTIEN6ESELLSCHAF T ~ .3 3 ~ / .Z - BO 4 3 0 is an epitaxial PNP silicon planar transistor in a plastic package similar to TO 2 0 2 . Together with its complementary transistor BD 4 2 9 it is particularly suitable for use in
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fl23Sb05
0D043fal
0436L
fl335b05
Q0043b2
transistor BD 430
0436L
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transistor s0014
Abstract: S0014
Text: SIEMENS AKTIENGESEL LSCH AF ISIEG fl23SbOS 00272flb b 47E D SFH 601G SERIES SIEM EN S PHOTOTRANSiSTOR OPTOCOUPLER -=^-6 3 Package Dimensions in Inches mm 1 343ÍB71 3»(BS) 138(3.5) 130(33) - Ï - (0 5) f Ita 142(36) 122(3 I) 1 E Œ E 11 H " ( 2 $4) Spaong
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fl23SbOS
00272flb
CATH00E
transistor s0014
S0014
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SAB 8051a p
Abstract: intel 8051A SAB 8051 p SAB 81 C 50 P 8352-5-16-P-T3 SiEMENS EC 350 98 SIEMENS SAB 8051A-P
Text: m fl23SbOS OOS'ISM'i 0 « S I E G 47E D SIEM EN S SIEMENS AKTIENGESELLSCHAF 7= V ?-/?-£> r 8-Bit Single Chip Microcontroller SAB 80513/80513-16 SAB 8352-5/8352-5-16 Preliminary Data SAB 80513/80513-16 SAB 8352-5/8352-5-16 • • • • • • • • •
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fl23SbOS
Hz/16
16-bit
D0S157S
SAB80513/8352-5
2-12MHZ
12-16MHZ)
CS00747
SAB 8051a p
intel 8051A
SAB 8051 p
SAB 81 C 50 P
8352-5-16-P-T3
SiEMENS EC 350 98
SIEMENS SAB 8051A-P
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Untitled
Abstract: No abstract text available
Text: ESC D • fl23SbOS 000MS21 7 « S I E G NPN Silicon RF Transistor SIEMENS AKTIENGESELLSCHAF : l T '2 f - / 7 BF 562 , ° BF 562 is an NPN silicon RF transistor in TO 92 plastic package 10 A 3 DIN 41868 . The transistor is particularly suitable for controllable VHF input stages in TV tuners.
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fl23SbOS
000MS21
62702-F542
82-02t"
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9 ELEMENT photoDIODE ARRAY
Abstract: photodiode linear array
Text: SIEMENS AKTIENGESELLSCHAF 47E D fl23Sb05 0 D 2 7 4 4 ‘Ì fi « S I E G SIEM ENS KOM 0622045 8-CHIP SILICON PHOTODIODE ARRAY VERY LOW DARK CURRENT ~ ~ p 4 i- 5 5 Outline Drawing Dimensions mm P C board Strip Chip •L Jki f LT^Lr 13.7 . 13.1 —I— 111 11j 11j 111
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fl23Sb05
125x2
9 ELEMENT photoDIODE ARRAY
photodiode linear array
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d880
Abstract: No abstract text available
Text: öflD D • fl23SbGS 00150^0 G « S I E G 88D 15098 D T * mS f f î ' C b BUZ 383 SIEMENS AKTIEN6ESELLSCHAF Main ratings N-Channel Drain-source voltage Continuous drain current Draln-source on-resistance Description Case voa h ^D S o n a 400V » 11,6 A = 0,5 Si
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fl23SbGS
C67078-A3308-A2
23Sb05
fl23Sb05
d880
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THYRISTOR br 403
Abstract: SIEMENS THYRISTOR thyristor 808 BR403
Text: i 2SC D • fl23SbOS 0G047bl S Silicon Miniature Thyristor I SIEG BR403 3.5-11 SIEMENS AKTIEN6ESELLSCHAF Si BR 4 0 3 is a silicon planar thyristor in a plastic package silimar to TO 202. The thyristor is especially suitable for use in switching power supplies as well as for universal applications
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fl23SbOS
0G047bl
BR403
62702-R
THYRISTOR br 403
SIEMENS THYRISTOR
thyristor 808
BR403
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MIL-D-87157
Abstract: MSD2010 MSD2011 MSD2012 MIL-STD-750 2072 Appnote44 MIL-STD-883-method 2016
Text: SIEMENS AKTIENGESELLSCHAF S IE M E N S 47E D fl23SbGS D02b'ltlfl 3 SIEG MSD2010TXV/TXVB YELLOW MSD2011TXV/TXVB h ig h e ff . r e d MSD2012TXV/TXVB HIGH EFF. GREEN MSD2013TXV/TXVB red .150" 4-Character 5x7 Dot Matrix Serial Input Alphanumeric Military Display
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AE3Sb05
MSD2010TXV/TXVBT"
MSD2011TXV/TXVB
MSD2012TXV/TXVB
MSD2013TXV/TXVB
fiE35b05
GD27QQÃ
-4I-37
-335mA
410mA
MIL-D-87157
MSD2010
MSD2011
MSD2012
MIL-STD-750 2072
Appnote44
MIL-STD-883-method 2016
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BFQ60
Abstract: BI10-M30T-AP6X Q62702-F655 bfq 85 Siemens Microwave S12PS2
Text: 2SC D m fl23Sb05 QQQ4b43 T H S I E G — *- — — • » « * w r i u u _ Low Noise NPN Silicon Microwave Transistor BFQ 60 up to 2 GHz_T ?sr. D '7 ^ 3 / - < 3 3 _ SIEMENS AKTIENGESELLSCHAF BFQ 60 is a bipolar silicon NPN microwave transistor in hermetically sealed metal
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fl23Sb05
QQ04b43
-TZ3/-33_
Q62702-F655
fl23SbOS
BFQ60
BFQ60
BI10-M30T-AP6X
Q62702-F655
bfq 85
Siemens Microwave
S12PS2
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5360-J
Abstract: 5360-K lg diode C 5360 LYS360-H LG 42 t 5360-FJ 5360-DG 5360 5360E
Text: SIEMENS AKTIENGESELLSCHAF 47E D • fl23SbQS 0DS7131 T m i l SIEM EN S re d SUPER-RED YELLOW GREEN LR LS LY LG 5360 5360 5360 5360 T 1 3/4 5 m m LED LAMP Package Dimensions mm A p p ro x w e ig h t 0 ,3 5 g FEATURES * High Light Output * Diffused Lens * Wide Viewing Angie 70°
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fl23SbOS
T13/4
5360-DG
5360-GK
5360-E
LYS360-H
5360-F
5360-HL
5360-FJ
5360-J
5360-K
lg diode
C 5360
LG 42 t
5360
5360E
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a1011
Abstract: 3A21N BUZ25 C67078-A1011-A2 V103 T2030
Text: ÔÔD » • fl23SbOS 0 0 1 M S 2 2 _ 4 * SIEG SIEMENS AK TI EN GES ELL SCH AF r ~ 3 f~ '/ Main ratings BUZ 25 N-Channel = 100 V Draln-source voltage l'os =» 19 A Continuous drain current h Draln-source on-resistance ^DS on a 0,1 a Description C ase Type
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23sb0s
BUZ25
C67078-A1011-A2
fi23Sfc
fl23Sb05
a1011
3A21N
BUZ25
C67078-A1011-A2
V103
T2030
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KDS 7c
Abstract: A3116 DIODE S45 C67078-A3116-A2 156* diode
Text: flêD D SIEMENS • fl23Sb05 0Q1SQ0& h M S I E G AKTIENGESELLSCHAF T ' ' 3 ^ ,* 7 3 Main ratings BUZ 348 N-Channel Drain-source voltage Continuous drain current Drain-source on-resistance Description Case _ K>s h ^DS on = 50 V - 39 A = 0,04: SIPMOS, N-channel, enhancement mode
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fl23Sb05
C67078-A3116-A2
fl23St
QQ15012
fl23SbOS
KDS 7c
A3116
DIODE S45
C67078-A3116-A2
156* diode
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BPX38
Abstract: flux meter glass lens phototransistor
Text: SIEMENS AKTIENGESELLSCHAF M7E D fl23SbOS GG57500 H « S I E G SIEMENS BPX38 SERIES PHOTOTRANSISTOR Package Dimensions in Inches mm Maximum Ratings Operating and Storage Temperature ( T ^ , T ^ . Soldering Temperature (distance from soldering joint to package ¿2 mm)
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BPX38
fi23SbOS
D027501
flux meter
glass lens phototransistor
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transistor BC 153
Abstract: TRANSISTOR BC 141 BCY41 BC transistor series transistor BC SERIES TRANSISTOR BC140 transistor BC 310 bc 103 transistor transistor bc 103 transistor C719
Text: ESC D • fl23SbQS 0004104 2 « S I E G . NPN Silicon Transistors SIEMENS AKTIENGESELLSCHAF 3c 140 BC 141 BC 140 and BC 141 are epitaxial NPN silicon transistors in TO 39 case 5 C 3 OIN 41873 . The collector is electrically connected to the case. The transistors are intended for use in AF
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23SbQS
0Q04104
BC1401>
Q60203-X140
Q60203-X140-V6
Q60203-X140-V10
Q60203-X140-V16
Q60203-X140-P
140/BC160
Q62702-C228-S2
transistor BC 153
TRANSISTOR BC 141
BCY41
BC transistor series
transistor BC SERIES
TRANSISTOR BC140
transistor BC 310
bc 103 transistor
transistor bc 103
transistor C719
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LPD-80A
Abstract: A950
Text: SIEMENS AKTIENGESELLSCHAF i4?E » • fl23SbOS D D 2 7 S 0 A SIEMENS T «SIEG LPD-80A PHOTODARLINGTON M ¿3 Advance Data Sheet FEATURES Maximum Ratings • Silicon NPN Photodarlington • Miniature Side-Facing Package Collector Emitter Voltage Emitter Collector Voltage
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023SbOS
DD27S0Ã
LPD-80A
IRL-80A
LPD-80A
IRL-80A.
A950
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photoresistor LDR 1000
Abstract: Photoresistor photoresistor LDR Heimann LT2011 Heimann lt Diode LT 02 Siemens optocoupler IL ldr photocell Photocell LDR
Text: S I EM EN S A K T I E N G E S E L L S C H A F 47E T> fl23Sb05 4 • SIEG ~ M Ì - S I Opto-couplers Heimann op to-coupler consist of a com bi nation of extremely high-intensity light em it ting diodes LED as emitters and specific photocell as detectors. Both elements are
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/002L
LT2002
LT2001
LT2011
photoresistor LDR 1000
Photoresistor
photoresistor LDR
Heimann
Heimann lt
Diode LT 02
Siemens optocoupler IL
ldr photocell
Photocell LDR
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Untitled
Abstract: No abstract text available
Text: bGE D fl23Sb05 G04b54fi Tfll • S I E G SIEMENS SFH 2310 GE-AVALANCHE PHOTODIODE TO PACKAGE SIEMENS AKTIENGESELLSCHAF Preliminary Data Sheet Package Dimensions in mm C hip Location FEATURES Maximum Ratings * Sensitive Receiver for the 2 nd W indow 1300 nm
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fl23Sb05
G04b54fi
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Untitled
Abstract: No abstract text available
Text: bOE D fl23Sb05 SIEMENS OOSQbOÜ MMT H S I E ä S I E M EN S A K T I E N G E S E L L S C H A F Intelligent Double Low-Side Switch 2 x 0.5 A TLE 4214 Bipolar IC Features • Double low-side switch, 2 x 0.5 A • Power limitation • Overtemperature shutdown
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fl23Sb05
Q67000-A8183
Q67000-A9094
-DSO-20-l
P-DSO-20-1
fl235bG5
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LF50
Abstract: No abstract text available
Text: bOE D • fl23SbGS DDi4b551 57b « S I E G -7=<Y/-&7 SIEMENS SFH4210 SIEMENS AKTIENGESELLSCHAF INFRARED EMITTING DIODE T018PA C K A G E ^ ■L Preliminary Data Sheet FEATURES Maximum Ratings * InGaAsP/lnP IRED Operating Temperature Range at Case Tc Storage Temperature Range (T3To)
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fl23SbGS
DDi4b551
SFH4210
T018PA
LF50
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Untitled
Abstract: No abstract text available
Text: SIEMENS AKTIENGESELLSCHAF 47E D • fl23SbOS G0273b3 SIEM EN S «SIEG LD273 TWO CHIP INFRARED EMITTER -r=^f-n Package Dimensions in Inches mm Chip Location 024 (0 6) 016{0 4) 5 ft - r ~ 354(9 0» 035 {0 8) 020 (0 5 ) ^ / 1JJ g g 181(461 323 (8 2 ) T ^ -— l
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fl23SbOS
G0273b3
LD273
BP104
BP103B
6E3Sb05
Oe07D80
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