Q67006-A9171
Abstract: hall current sensor 3A 4921-3U AEP01694 TLE4921-3U siemens magnetic sensors Siemens Hall AEA01259 AED01707 AED01709
Text: SIEM ENS Dynamic Differential Hall Effect Sensor 1C TLE4921-3U Bipolar IC Features • • • • • • • • • • • • • • • Advanced performance High sensitivity Symmetrical thresholds High piezo resistivity Reduced power consumption South and north pole pre-induction possible
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TLE4921-3U
4921-3U
Q67006-A9171
23SbQS
23Sb0S
4921-3U
hall current sensor 3A
AEP01694
TLE4921-3U
siemens magnetic sensors
Siemens Hall
AEA01259
AED01707
AED01709
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Untitled
Abstract: No abstract text available
Text: SIEMENS PNP Silicon AF Transistors SMBTA 55 SMBTA 56 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: SMBTA 05, SMBTA 06 NPN Type Marking Ordering Code (tape and reel) PinC:onflgur ation 1 2 3 Package1) SMBTA 55
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Q68000-A3386
Q68000-A2882
OT-23
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ras 0910
Abstract: BUZ47A C67078-A1604-A2 KDS - 5A
Text: aa» » • a 23SbQS o o m t i a b ■ _ s i EG 8 8D 14618 D 'p '" ^<7 BUZ47A SIEMENS AKTIENGESELLSCHAF -Main ratings Draln-source voltage Continuous drain current Draln-source on-reslstance Description Case VD3 /„ = 500 V = 3,9 A floS on “ 2,0 iî
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235bos
BUZ47A
C67078-A1604-A2
fl235fe
Q014b25
535b05
0ai4b23
ras 0910
BUZ47A
C67078-A1604-A2
KDS - 5A
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BFQ70
Abstract: zo 107 NA BFq 98 transistor zo 109 zo 107 MA ST2C Q62702-F774 VCE051S1 bfq 85 zo 107
Text: SIEM ENS NPN Silicon RF Transistor • For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2 mA to 20 mA. • Hermetically sealed ceramic package • HiRel/Mil screening available. ESD: Electrostatic discharge sensitive device, observe handling precautions!
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VCE051S1
Q62702-F774
fi23SbOS
0Gb7117
BFQ70
zo 107 NA
BFq 98
transistor zo 109
zo 107 MA
ST2C
VCE051S1
bfq 85
zo 107
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EM 4093
Abstract: No abstract text available
Text: bOE D ÔS35büS ÜQ4titi07 3 m ISIEG T^/-// SFH 409 SIEMENS INFRARED EMITTER SIEMENS AKTIENÛESELLSCHAF Package Dimensions in Inches mm Surface not flat - 204 (5 2) 177 (4 5) 024 (.6) .0 1 6 ( 4 ) 100 (2 54) .0 2 8 (7 ) 0 1 6 (4 ) f L a 1 2 2 (3 1) h w 114 (2 9 )
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Q4titi07
EM 4093
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Untitled
Abstract: No abstract text available
Text: Semiconductor Group Siemens AG Consumer Electronics MOS Edition Target Specification Document number: V66100-M692-X-1 -7659 Date: 08.11.94 flE35tiDS D07c1blb 02=1 11.94 Page: ii Target Specification SDA 5650 Contents 1 General D es c rip tio n .5
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V66100-M692-X-1
flE35tiDS
0235hDS
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Untitled
Abstract: No abstract text available
Text: SIEMENS 4M X 4-Bit D yn am ic RAM H YB 5116400J-50/-60/-70/-80 Advanced Inform ation • 4 194 304 words by 4-bit organization • 0 to 70 "C operating temperature • Fast access and cycle time RAS access time: 50 ns -50 version 60 ns (-60 version) 70 ns (-70 v e rs io n )
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5116400J-50/-60/-70/-80
soj-28/24
23SLG5
P-SOJ-28/24
23SLDS
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fopf
Abstract: ob35l0s a 3116 HYB3116160BSJ-50 HYB3116160BSJ-60 HYB3116160BSJ-70 HYB3118160BSJ-50 HYB3118160BSJ-60 HYB3118160BSJ-70 71ST5
Text: S IE M E N S 1M X 16-Bit Dynamic RAM 1 k & 4k-Refresh HYB 3116160BSJ-50/-60/-70 HYB 3118160BSJ-50/-60/-70 Advanced Inform ation Output unlatched at cycle end allows tw o dim ensional chip selection Read, write, read-m odify-write, CAS-before-RAS refresh, RAS-only refresh,
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16-Bit
3116160BSJ-50/-60/-70
3118160BSJ-50/-60/-70
HYB3118160BSJ-50)
HYB3118160BSJ-60)
HYB3118160BSJ-70)
J-////////////S77X
I/01-I/016
fl235b05
fopf
ob35l0s
a 3116
HYB3116160BSJ-50
HYB3116160BSJ-60
HYB3116160BSJ-70
HYB3118160BSJ-50
HYB3118160BSJ-60
HYB3118160BSJ-70
71ST5
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siemens b 58 468 la intel 80
Abstract: siemens "b 58 468" la intel 80 siemens MFAB alco ff 4-4 dah PEB2055n CDS2C MOD1024 siemens b 58 468 la intel 80 0/siemens "b 58 468" la intel 80
Text: SIEMENS Extended PCM Interface Controller EPIC PEB 2055 CMOS 1C Preliminary Data 1 Introduction 1.1 Features * Board Controller for up to 32 ISDN or 64 voice subscribers * Nonblocking switch tor 128 channels (16.32. or 64 kbps bandwidth) * Two consecutive 64 kbps channels can be switched as a single 128 kbps channel.
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023SbQS
E35b05
Q67100
Q67100H
235b05
0G703
siemens b 58 468 la intel 80
siemens "b 58 468" la intel 80
siemens
MFAB
alco ff 4-4 dah
PEB2055n
CDS2C
MOD1024
siemens b 58 468 la intel 80
0/siemens "b 58 468" la intel 80
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 1 0 L Not for new design SIPMOS Power transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Type BUZ 1 0 L Vbs 50 V 1D ^DS on Package Ordering Code 23 A 0.07 Q TO-220 AB C67078-S1329-A2 Maximum Ratings Continuous drain current
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O-220
C67078-S1329-A2
fl23ShQ5
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BC 148 transistor
Abstract: transistor BC 147 NPN transistor bc 148 bc 147 transistor of transistor bc 148 bc 148 npn transistor S1000 Siemens 8C121 transistor bc 148 bc 149 transistor
Text: .25C D • MSIEG ■ _ 023SbOS GQGMCH? *? W ~/l NPN Silicon Transistors SIEMENS AKTIENGESELLSCHAF C121 i B C 122 ! - B C 123 Î BC 121, BC 122, and BC 123 are miniature epitaxial NPN silicon planar transistors in U 32
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023SbOS
BC1211)
BC-121
Q60203-Q60203-Q60203-Q60203-Q60203-Q60203
Q60203-Q60203
Q60203
bc121.
bc122,
bc123
BC 148 transistor
transistor BC 147
NPN transistor bc 148
bc 147 transistor
of transistor bc 148
bc 148 npn transistor
S1000 Siemens
8C121
transistor bc 148
bc 149 transistor
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Untitled
Abstract: No abstract text available
Text: SIEMENS PEB 20550 PEF 20550 Overview 1 Overview The PEB 20550 Extended Line Card Controller is a highly integrated controller circuit optimized for line card and key system applications. It combines all functional blocks necessary to manage up to 32 digital (ISDN or proprietary) or 64 analog subscribers.
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fi235bG5
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dda09
Abstract: siemens 286
Text: 47E SIEM EN S » • ñ23SbOS SIEMENS GDaasm 7 «SIEG AKTIENGESELLSCHAF ^ •5 2 -3 3 -1 ^ SAB 82C257 Advanced DMA Controller for 8-/16-Bit Microcomputer Systems 10MHz Advanced Information • High-performance 16-bit DMA controller for 16-bit family processors SAB 80286,
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23SbOS
82C257
8-/16-Bit
10MHz
16-bit
16/8-bit
82C257
PL-CC-68
dda09
siemens 286
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Untitled
Abstract: No abstract text available
Text: SIEM ENS NPN Silicon RF Transistor • For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2 mA to 20 mA. • Hermetically sealed ceramic package • HiRel/Mil screening available. ESD: Electrostatic discharge sensitive device, observe handling precautions!
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OCR Scan
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BFQ70
Q62702-F774
S23SbOS
0Db7117
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Untitled
Abstract: No abstract text available
Text: SIEMENS C16x-Family of High-Performance CMOS 16-Bit Microcontrollers Preliminary SAB 80C166/83C166 • • • • • • • • • • • • • • • • • • • • • • • • • • SAB 80C166/83C166 16-Bit Microcontroller High Performance 16-bit CPU with 4-Stage Pipeline
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C16x-Family
16-Bit
80C166/83C166
83C166
P-MQFP-100-2
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MIP211
Abstract: LSC series Microcontroller by MOTOROLA 007011 siemens Motorola LSC microcontroller ITP05590 siemens modules GR 60 48 V 120 A dtmfgenerator B2M marking Q67100-H6458 converter siemens modules GR 60 48 V 120 A
Text: SIEMENS Audio Ringing Codec Filter Featuring Speakerphone Function ARCOFI -SP PSB 2163 Preliminary Data BICMOS-IC 1 • • • • • • • • • • • • • • • • • • • • Features Applications in digital terminal equipment featuring voice
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NET33)
16-bit
100-mW
P-LCC-28-1
fl235fc
MIP211
LSC series Microcontroller by MOTOROLA
007011 siemens
Motorola LSC microcontroller
ITP05590
siemens modules GR 60 48 V 120 A
dtmfgenerator
B2M marking
Q67100-H6458
converter siemens modules GR 60 48 V 120 A
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siemens igbt BSM 75 gb 100
Abstract: siemens igbt BSM 150 Gb 160 d AL100-D Q102 C67076-A2104-A2 siemens igbt BSM 150 gb 100 d BSM 75 GB 120 D siemens igbt BSM 100 gb BSM 225 IGBT Power Module sieg
Text: LOE D • ä235bDS 0045flSb ^03 « S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF ? BSM 75 GB 100 D BSM 75 GAL 100 D IGBT Module Preliminary Data V CE = 1000 V / c = 2 x 100 A at r c = 25 "C / c = 2 x 75 A at T c = 80 C • • • • • Power m odule Half-bridge/Chopper
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235bDS
0045flSb
2x100
C67076-A2104-A2
C67076-A2003-A2
fl23SbDS
siemens igbt BSM 75 gb 100
siemens igbt BSM 150 Gb 160 d
AL100-D
Q102
C67076-A2104-A2
siemens igbt BSM 150 gb 100 d
BSM 75 GB 120 D
siemens igbt BSM 100 gb
BSM 225
IGBT Power Module sieg
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Untitled
Abstract: No abstract text available
Text: SIEMENS SIEGET 25 BFP 450 NPN Silicon RF Transistor • For medium power amplifiers • Compression point P.1dB = +19dB m at 1.8 GHz maximum available gain Gma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency f j = 24 GHz • Gold metalization for high reliability
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Q62702-F1590
OT-343
2200b
IS21I2
fl235bQS
0122QQ7
0235b05
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PDF
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transistor BD 680
Abstract: transistor BD 677 bd678 TRANSISTOR Bd 137
Text: ESC » • flS3 5 bOS QOOMB'îT 3 « S I E G T—33 - 3 1 BD 676 BD 678 ' BD 680 PNP Silicon Darlington Transistors SIEMENS A K T I E N G E S E L L S C H A F 143" ° Epibase power darlington transistors 40 W BD 676, BD 678, and BD 680 are monolithic PNP silicon epibasepower darlington transistors
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Type00
BD680
fi23SbOS
transistor BD 680
transistor BD 677
bd678
TRANSISTOR Bd 137
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smd diode g5 zener
Abstract: smd JS siemens air temperature sensors smd diode g5 BTS933 E3043 E3062A zener diode BN Q67060-S6701-A2 Smart 700 SIEMENS
Text: SIEMENS HITFET BTS933 Smart Lowside Power Switch Features • • • • • • • • • Product Summary Logic Level Input Continuous drain source Input protection ESD On-state resistance Thermal shutdown Current limitation Overload protection Load current (ISO)
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BTS933
TQ220/5_
Q67060-S6701-A2
T0220/5
E3043
Q67060-S6701
E3062A
smd diode g5 zener
smd JS
siemens air temperature sensors
smd diode g5
BTS933
E3043
E3062A
zener diode BN
Q67060-S6701-A2
Smart 700 SIEMENS
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5116 RAM
Abstract: bsj7 siemens fog mug 14 431 TNC 24 mk 2 HYB3116165BSJ-50 HYB3116165BSJ-60 HYB3116165BSJ-70 HYB3118165BSJ-50 HYB3118165BSJ-60
Text: SIEM EN S HYB 5116165BSJ -50/-60/-70 HYB 5118165BSJ -50/-60/-70 1M X 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode - EDO Preliminary Inform ation max. 495 active mW ( HYB3116165BSJ-60) max. 440 active mW ( HYB3116165BSJ-70) 11 mW standby (TTL) 5.5 mW standby (MOS)
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16-Bit
5116165BSJ
5118165BSJ
HYB3118165BSJ-50)
HYB3118165BSJ-60)
I/01-I/016
16-EDO
777777yÃ
5116 RAM
bsj7
siemens fog
mug 14 431
TNC 24 mk 2
HYB3116165BSJ-50
HYB3116165BSJ-60
HYB3116165BSJ-70
HYB3118165BSJ-50
HYB3118165BSJ-60
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PDF
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44e 402
Abstract: No abstract text available
Text: SIEMENS 1M X 16-Bit Dynamic RAM 4k-Refresh HYB 5116160BSJ-50/-60/-70 Advanced Inform ation • • • • • 1 048 576 w ords by 16-bit organization 0 to 70 'C operating tem perature Fast access and cycle time RAS access time: 50 ns (-50 version) 60 ns (-60 version)
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16-Bit
5116160BSJ-50/-60/-70
44e 402
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PDF
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utc 3845 D
Abstract: utc 3845
Text: SIEM ENS VPS / PDC-plus D ecoder SDA 5650/X CMOS 1 General Description The PDC plus SDA 5650 decoder chip receives all VPS and 8/30 Format 1 and 2 data together with the teletext header information for easy identification of broadcast transmitter. The SDA 5650 includes a
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5650/X
6235b05
P-DSO-20-1
utc 3845 D
utc 3845
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS TEMPFET BTS 129 Features • • • • N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Pin Type Vos BTS 129 60 V h 27 A 1 2 3 G D S RoSion Package Ordering Code 0.05 £2
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TQ-220AB
C67078-A5013-A2
235b05
fl235bQS
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PDF
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