2SB0939
Abstract: 2SB0939A 2SB939 2SB939A 2SD1262 2SD1262A
Text: Power Transistors 2SB0939, 2SB0939A 2SB939, 2SB939A Silicon PNP epitaxial planar type Darlington For midium-speed power switching Complementary to 2SD1262 and 2SD1262A –60 VEBO –7 V Peak collector current ICP –12 A Collector current IC –8 A dissipation
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2SB0939,
2SB0939A
2SB939,
2SB939A)
2SD1262
2SD1262A
2SB0939
2SB0939
2SB0939A
2SB939
2SB939A
2SD1262A
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2SB0939
Abstract: 2SB0939A 2SB939 2SB939A 2SD1262 2SD1262A
Text: Power Transistors 2SB0939 2SB939 , 2SB0939A (2SB939A) Silicon PNP epitaxial planar type Darlington Unit: mm Collector-base voltage (Emitter open) Unit VCBO −60 V 2 −80 2SB0939A Collector-emitter voltage 2SB0939 (Base open) 2SB0939A VCEO Emitter-base voltage (Collector open)
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2SB0939
2SB939)
2SB0939A
2SB939A)
2SB0939
2SB0939A
2SB939
2SB939A
2SD1262
2SD1262A
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2SB939
Abstract: 2SB939A 2SD1262 2SD1262A
Text: Power Transistors 2SD1262, 2SD1262A Silicon NPN triple diffusion planar type Darlington Unit: mm For midium speed power switching Complementary to 2SB939 and 2SB939A 2.0 Unit: mm V 80 60 VCEO Unit 8.5±0.2 3.4±0.3 6.0±0.3 1.0±0.1 V 80 Emitter to base voltage
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2SD1262,
2SD1262A
2SB939
2SB939A
2SD1262
2SB939A
2SD1262
2SD1262A
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0939 (2SB939), 2SB0939A (2SB939A) Silicon PNP epitaxial planar type Darlington Unit: mm Collector-base voltage (Emitter open) Unit VCBO −60 V 2 −80 2SB0939A Collector-emitter voltage 2SB0939
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2002/95/EC)
2SB0939
2SB939)
2SB0939A
2SB939A)
2SD1262,
2SD1262A
2SB0939
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2SB939
Abstract: 2SB939A 2SD1262 2SD1262A DSA003711
Text: Power Transistors 2SB939, 2SB939A Silicon PNP epitaxial planar type Darlington For midium-speed power switching Complementary to 2SD1262 and 2SD1262A –60 VEBO –7 V Peak collector current ICP –12 A Collector current IC –8 A dissipation Ta=25°C 45 PC
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2SB939,
2SB939A
2SD1262
2SD1262A
2SB939
2SB939
2SB939A
2SD1262A
DSA003711
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2SB0939
Abstract: 2SB0939A 2SB939 2SB939A 2SD1262 2SD1262A
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0939 (2SB939), 2SB0939A (2SB939A) Silicon PNP epitaxial planar type Darlington Unit: mm 3.4±0.3 6.0±0.2 1.0±0.1 2SB0939 Collector-base voltage (Emitter open) Unit VCBO −60
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2002/95/EC)
2SB0939
2SB939)
2SB0939A
2SB939A)
2SD1262,
2SD1262A
2SB0939
2SB0939A
2SB939
2SB939A
2SD1262
2SD1262A
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0939 (2SB939), 2SB0939A (2SB939A) Silicon PNP epitaxial planar type Darlington Unit: mm Collector-base voltage (Emitter open) Unit VCBO −60 V 2 −80 2SB0939A Collector-emitter voltage 2SB0939
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2002/95/EC)
2SB0939
2SB939)
2SB0939A
2SB939A)
2SD1262,
2SD1262A
2SB0939
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0939 (2SB939), 2SB0939A (2SB939A) Silicon PNP epitaxial planar type Darlington Unit: mm 1.0±0.1 VCBO −60 V 2 −80 Collector-emitter voltage 2SB0939 (Base open) 2SB0939A
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2002/95/EC)
2SB0939
2SB939)
2SB0939A
2SB939A)
2SD1262,
2SD1262A
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IB500
Abstract: 2SB0939 2SB939 2SB939A 2SD1262 2SD1262A
Text: Power Transistors 2SD1262, 2SD1262A Silicon NPN triple diffusion planar type Darlington Unit: mm For midium speed power switching Complementary to 2SB0939 2SB939 and 2SB939A (2SB939A) 2.0 Unit: mm V 80 60 VCEO Unit 8.5±0.2 3.4±0.3 6.0±0.3 1.0±0.1 V 80
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2SD1262,
2SD1262A
2SB0939
2SB939)
2SB939A
2SB939A)
2SD1262
IB500
2SB0939
2SB939
2SB939A
2SD1262
2SD1262A
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BOX34B
Abstract: bot64a BOX54B sgs-ates transistors bot64 B064S MJ0117 BOW94B BOV64 MJ-01
Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ie Max (A) PD Max (W) fT hFE Min Max (Hz) leBO Max (A) tr Max tf Max TOper Max (8) (8) (Oe) Package Style PNP Darlington TransisLors, (Cont'd) 2N6041 2SBS72A 2SB939A 2SB951A BOX54B B0266A
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2N6041
2SBS72A
2SB939A
2SB951A
BOX54B
B0266A
B064S
B0700
B0700A
BOX34B
bot64a
sgs-ates transistors
bot64
MJ0117
BOW94B
BOV64
MJ-01
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2SC429GTM
2SC458
2SC458LG
2SC503
2SC504
2SC510
2SC512
2SC519
2SC520A
2SC594
sn76131
tlo72cp
TOSHIBA 2N3055
M53207P
2N3055 TOSHIBA
KIA7313AP
kia7640ap
LA5530
M5L8155P
TBB1458B
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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2SB909
Abstract: 2SB971 2SB978 2sb911 2SB901 2SB917 2SB918 2SB983 2SD1347 2SB902
Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SB901 -60 -4A 40W(Tc=25ºC) 150 120 -4 -1A 2SB902 -30 -15 -100 200 125
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2SB901
2SB902
2SB903
2SB904
2SB905
2SB906
2SB907
2SB908
2SB909
2SB910
2SB909
2SB971
2SB978
2sb911
2SB901
2SB917
2SB918
2SB983
2SD1347
2SB902
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2SD1204
Abstract: 2SD1202 2SD1278 2SD1227 2SD1300 2SD1225 2SD1297 equivalent 2sd1285 2SD1240 2SD1201
Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 100W 2SD1201 500 7 10A 150 100 3 10A (Tc=25ºC) 100W 2SD1202
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2SD1201
2SD1202
2SD1203
2SD1204
2SD1205
20002SD1205A
2SD1206
2SB894
2SD1207
2SD1208
2SD1204
2SD1202
2SD1278
2SD1227
2SD1300
2SD1225
2SD1297 equivalent
2sd1285
2SD1240
2SD1201
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2SB939
Abstract: 2SB939A 2SD1262 2SD1262A high current Darlington pair IC
Text: Power Transistors 2SB939, 2SB939A 2SB939, 2SB939A Package Dimensions Silicon PNP Epitaxial Planar Darlington Type Medium Speed Power Switching Complementary Pair with 2SD 1262, 2SD 1262A • Features • High DC current gain hFE • High speed switching
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2SB939,
2SB939A
2SD1262,
2SD1262A
2SB939
2SB939A
2SD1262
2SD1262A
high current Darlington pair IC
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2SB962
Abstract: 2SD1288 2SB938A 2SB939 2SB939A 2SB940 2SB940A 2SB941 2SB941A 2SB942
Text: - 68 T a = 2 5 cC , * T O T c = 2 5 t ; M % íí 2SB938A 2SB939 fâT 2SB939A ffl £ íé VcBO Vc e o (V) (V) Ic (D C ) (A) m Pc Pc* ICBO (W) (W) (max) (//A) VcB (V) % (min) fä (max) tí VcE (V) (T a = 2 5 ' C ) I c/ I e (A) [*EPIÍtypíS] (max) (V) PA/S»
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2SB938A
2SB939
2SB939A
2SB940
2SB940A
2SB941
2SB947A
2SB951A
2SB952
2SB952A
2SB962
2SD1288
2SB941A
2SB942
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2SB939
Abstract: 2SB939A 2SD1262 2SD1262A
Text: 2SD1262, 2SD1262A Power Transistors 2SD1262, 2SD1262A Package Dimensions Silicon NPN Triple-Diffused Planar Darlington Type Medium Speed Power Switching Complementary Pair with 2SB939, 2SB939A. • Features . • High DC c u rre n t gain Iifê • High speed switching '
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2SD1262,
2SD1262A
2SB939,
2SB939A.
2SD1262
2SB939
2SB939A
2SD1262A
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD1262, 2SD1262A 2SD1262, 2SD1262A Package Dim ensions Unit ! mm Silicon NPN Triple-Diffused Planar Darlington Type 3.7max. 8.7max. t"—* l.l.max. 6.5 max. Medium Speed Pow er Switching Com plem entary Pair with 2SB939, 2SB939A. r— i
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2SD1262,
2SD1262A
2SB939,
2SB939A.
2SD1262
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2SD1262
Abstract: panasonic 2SD
Text: Power Transistors 2SB939, 2SB939A 2SB939, 2SB939A • Package Dimensions Unit ! mm Silicon PNP Epitaxial Planar Darlington Type 3.7 max. 8.7 max. Medium Speed Power Switching Complementary Pair with 2S D 1262, 2SD 1262A I*- * l.lmax. 6.5max. ■ Features • High DC cu rre n t gain hFE
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2SB939,
2SB939A
2SB939
2SB939A
2SD1262
panasonic 2SD
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PA8080
Abstract: 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1250A 2SD1251
Text: - 240 * mXÊfâ Ta=25*0, *0](âTc=25tC m s S 2SD1245 2SD1246 m H # VCBO VcEO (V) (V) 500 400 PSW 30 PSW 30 PA 2SD1247 fè S ic(DC) Pc Pc* I.CBO, (A) (W) (W) (max) (uA) 40 Ä tt Vc b (V) 100 350 (min) [*EP(ïtypÎÜ] V c E Í s a t ) 'ÍB E ( s a t ) (max)
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2SD1245
2SD1246
2SD1247
2SD1248K
2SD1249
2SD1249A
2SD1250
2SD1259A
2SB937
2SD1260
PA8080
2SD1246
2SD1247
2SD1250A
2SD1251
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D1274A
Abstract: B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398
Text: Transistors Selection Guide by Packages • SS Mini Type Packages (D1) \ V C E 0 (V) 10 lc (mA) \ pc= i 25 mw 15 20 40 50 150 185 2SC4627 A 2SC5021 -2SA1790 >2SC4626 2SC4655 15 30 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 50 80 2SD2345 (2SA1791 i 2SC4656 2SC4691
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2SC4627
2SC5021
-2SA1790
2SC4626
2SC4655
2SC4809
2SC5295
2SC4808
2SA1806
2SD2345
D1274A
B1317
C4714
D1707
b1108
c2258 transistor
D2052 transistor
transistor b1154
2sD2504 transistor
B1398
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