Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SB788 Search Results

    2SB788 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SB788 Panasonic Silicon PNP Transistor Original PDF
    2SB788 Panasonic Silicon PNP epitaxial planer type Original PDF
    2SB788 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB788 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB788 Unknown Cross Reference Datasheet Scan PDF
    2SB788 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SB788 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB788 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB788 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SB788 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB788 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    2SB788 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SB0788 2SB788 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SD0958 (2SD958) Unit: mm (1.0) (1.0) (1.5) Rating Unit VCBO −120 V Collector-emitter voltage (Base open) VCEO −120 V VEBO


    Original     		PDF 2SB0788 2SB788) 2SD0958 2SD958)

    2SB788

    Abstract: 2SB0788 2SD0958 2SD958
    Text: Transistor 2SD0958 2SD958 Silicon NPN epitaxial planer type For high breakdown voltage and low-noise amplification Complementary to 2SB0788 (2SB788) Unit: mm 6.9±0.1 1.0 0.85 Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage


    Original     		PDF 2SD0958 2SD958) 2SB0788 2SB788) 2SB788 2SB0788 2SD0958 2SD958

    2SB0788

    Abstract: 2SB788 2SD0958 2SD958
    Text: Transistors 2SD0958 2SD958 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SB0788 (2SB788) Unit: mm 2.5±0.1 (1.0) (1.0) (1.5) (1.5) R 0.9 2.4±0.2 (0.85) • Absolute Maximum Ratings Ta = 25°C Rating Unit


    Original     		PDF 2SD0958 2SD958) 2SB0788 2SB788) 2SB0788 2SB788 2SD0958 2SD958

    2SA114

    Abstract: 2SA912 2SA554 MALLORY 150 BSW23 2sb807 2sa1285af LOW-POWER SILICON PNP 2sb788 2SA119
    Text: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 PTC103 A5T3498 2N3494 2N3498 MMBT8599 HSE175 BCX28 BC558B BCX35 PTC127 ~~~1b71 15 20 2SA1285E 2SA1285F 2SA1285G 2SB788 SOR5400 (A) 2SA1145 2SA912 2SA11450 ~~~~~~~XE 25 2SA1123 2SB792 2SB807 2SA1285AF


    Original     		PDF PTC103 A5T3498 2N3494 2N3498 MMBT8599 HSE175 BCX28 BC558B BCX35 PTC127 2SA114 2SA912 2SA554 MALLORY 150 BSW23 2sb807 2sa1285af LOW-POWER SILICON PNP 2sb788 2SA119

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SD0958 2SD958 Silicon NPN epitaxial planar type For high breakdown voltage and low-noise amplification Complementary to 2SB0788 (2SB788) Unit: mm 2.5±0.1 (1.0) 4.5±0.1 3.5±0.1 R 0.9 R 0.7 4.1±0.2 ● High collector to emitter voltage VCEO.


    Original     		PDF 2SD0958 2SD958) 2SB0788 2SB788)

    2SD958

    Abstract: 2SB788
    Text: Transistor 2SD958 Silicon NPN epitaxial planer type For high breakdown voltage and low-noise amplification Complementary to 2SB788 Unit: mm 6.9±0.1 1.0 0.85 Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO


    Original     		PDF 2SD958 2SB788 2SD958 2SB788

    2SB0788

    Abstract: 2SB788 2SD0958 2SD958
    Text: Transistor 2SB0788 2SB788 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD0958 (2SD958) Unit: mm 6.9±0.1 1.0 0.85 (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –120 V Collector to emitter voltage


    Original     		PDF 2SB0788 2SB788) 2SD0958 2SD958) 2SB0788 2SB788 2SD0958 2SD958

    2SB0788

    Abstract: 2SB788 2SD0958 2SD958
    Text: Transistor 2SD0958 2SD958 Silicon NPN epitaxial planer type For high breakdown voltage and low-noise amplification Complementary to 2SB0788 (2SB788) Unit: mm 6.9±0.1 1.0 0.85 Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage


    Original     		PDF 2SD0958 2SD958) 2SB0788 2SB788) 2SB0788 2SB788 2SD0958 2SD958

    2SB788

    Abstract: 2SD958
    Text: Transistor 2SB788 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD958 Unit: mm 6.9±0.1 1.0 0.85 Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –120 V Collector to emitter voltage


    Original     		PDF 2SB788 2SD958 2SB788 2SD958

    2SB788

    Abstract: 2SB0788 2SD0958 2SD958
    Text: Transistors 2SD0958 2SD958 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SB0788 (2SB788) Unit: mm 2.5±0.1 Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current


    Original     		PDF 2SD0958 2SD958) 2SB0788 2SB788) 2SB788 2SB0788 2SD0958 2SD958

    2SB788

    Abstract: 2SB0788 2SD0958 2SD958
    Text: Transistors 2SB0788 2SB788 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SD0958 (2SD958) Unit: mm (1.0) 4.1±0.2 2.0±0.2 (0.85) • Absolute Maximum Ratings Ta = 25°C 0.45±0.05 Parameter Symbol


    Original     		PDF 2SB0788 2SB788) 2SD0958 2SD958) 2SB788 2SB0788 2SD0958 2SD958

    2SB0788

    Abstract: 2SB788 2SD0958 2SD958
    Text: Transistors 2SD0958 2SD958 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SB0788 (2SB788) Unit: mm 2.5±0.1 (1.0) (1.5) R 0.9 1.0±0.1 2.4±0.2 4.1±0.2 2.0±0.2 R 0.7 4.5±0.1 • Features • High collector-emitter voltage (Base open) VCEO


    Original     		PDF 2SD0958 2SD958) 2SB0788 2SB788) 2SB0788 2SB788 2SD0958 2SD958

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SB0788 2SB788 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SD0958 (2SD958) Unit: mm 2.5±0.1 • Absolute Maximum Ratings (Ta=25˚C) (1.0) 4.5±0.1 3.5±0.1 4.1±0.2 (0.85) Parameter


    Original     		PDF 2SB0788 2SB788) 2SD0958 2SD958)

    2SB788

    Abstract: 2SB0788 2SD0958 2SD958
    Text: Transistors 2SB0788 2SB788 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SD0958 (2SD958) Unit: mm 2.5±0.1 Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current


    Original     		PDF 2SB0788 2SB788) 2SD0958 2SD958) 2SB788 2SB0788 2SD0958 2SD958

    2SB0788

    Abstract: 2SB788 2SD0958 2SD958
    Text: Transistor 2SB0788 2SB788 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD0958 (2SD958) Unit: mm 2.5±0.1 • Absolute Maximum Ratings (Ta=25˚C) (1.0) 4.5±0.1 3.5±0.1 4.1±0.2 (0.85) Parameter Symbol


    Original     		PDF 2SB0788 2SB788) 2SD0958 2SD958) 2SB0788 2SB788 2SD0958 2SD958

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    2SA1015

    Abstract: 2SA1091 2SA1371 2SA562TM 2SB548 2SB814 2SA1243 2SB642 2SB793 2SA1306A
    Text: - 34 - m s Type No. £ M a n u f. 2SA 1535 , tö T 2SA 1535A tö T = * SANYO 2SB1037 X 3E TOSHIBA B 'S NEC 1 Tn« B tL HITACHI H ± il FUJITSU tö T MATSUSHITA — M MITSUBISHI 2SB649A = 2SA 1542 □—A 2SA 1543 □— A 2SA1015 2SB642 2SA 1544 b m. 2SA1624


    OCR Scan     		PDF 2SB1037 2SB649A 2SB1186A 2SA1306A 2SB1186B 2SB548 2SB1314 2SA1783 2SA1015 2SA733 2SA1091 2SA1371 2SA562TM 2SB548 2SB814 2SA1243 2SB642 2SB793 2SA1306A

    K 2411

    Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
    Text: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli­ cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type


    OCR Scan     		PDF 3SK241 T0220F K 2411 k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019

    2SB0774

    Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
    Text: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)


    OCR Scan     		PDF O-126 2SC2258 2SC3063 2SC5340 O-202 T0-220 O-220F 2SC2923 2SC4714 2SC3942 2SB0774 2SA2004 2SB160 2SB642

    D2375

    Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
    Text: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A


    OCR Scan     		PDF 125mW 2SC4627 2SC5021 2SA1790 2SC4626 2SC4655 2SC4809 2SC5295 2SC4808 2SA1806 D2375 D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526

    A1534

    Abstract: T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A
    Text: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) A Tentative ( : Com plem entary pair Panasonic 125 Part Number List ■ Discrete Devices Old Part Nos | New Part Nos [ Package Sym bol 1 SS Mini 3P: SS-Mini 3-pin


    OCR Scan     		PDF T0-92 T092L: T0220F T0220 T092NL A1534 T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A

    2SD2458

    Abstract: 2SD2436 2SD2434 2SB1600 2SB642 2SB1627 2SD2433 2SD1010 2sB774 transistor HOA1404-2
    Text: • Silicon Small Signal Transistors Package No. S9TST0D Applica­ tion Functions SS Mini Type (D1) f 2SB1462 I 2 SD 22 I 6 S Mini Type (D5) Mini Type (D10) ( 2SB709A I 2 SDI 8 I 9A I 2SD601A (2SB1219/A í 2SB710/A I 2SD1820/A I 2SD602/A 1 2SB1218A T Mini Type New S Type


    OCR Scan     		PDF O-92NL 2SB1462 2SD2216 2SB1218A I2SD1819A 2SB709A 2SD601A 2SB1627 I2SD2496 2SA1309A 2SD2458 2SD2436 2SD2434 2SB1600 2SB642 2SD2433 2SD1010 2sB774 transistor HOA1404-2

    2SD889

    Abstract: 2SB772 KT 185 2SB754 2SB793 2SB751A 2sb764 2sb774 2SB753 2SB757
    Text: - 60 - m n. Ta=25íC, *EP(3Tc=25‘ C SS £ m S ii V’ CBO V’ ceo (V) (V) Ici DC) (A) 2SB751A PA/SW -80 -80 -4 2SB753 PSW/PA -100 -80 -7 2SB754 PSW/PA -50 -50 -7 2SB757 HS PSW/PA/Audio/Reg -40 -40 LF PA -60 LF PA LF PA LF PA 2SB761 2SB76ÎA 2SB762 2SB762A


    OCR Scan     		PDF 2SB751A 2SB753 2SB754 2SB757 2SB761 2SB761A 2SB762 2SD968 SC-62 2SB789 2SD889 2SB772 KT 185 2SB754 2SB793 2sb764 2sb774 2SB753 2SB757

    2SD921

    Abstract: 2SD920 T03B 2SD983 2SB793 2SD933H 2SD947 2SD917 2SD922 2SD923
    Text: - 230 - 13=25*0. *EP(äTc=25'1C m ?± ^ m £ VcBO Vc e o (V) (V) IC ( D C ) föT T V Hout 330 200 7 2SD920 % ± im Reg/PA 200 180 5 Reg/PA 200 180 Reg/PA 150 100 Reg/PA 150 100 Reg/PA 200 HV S W / O ' t O 2SD922 2SD923 % ± im %±Gm -M ± m m 2SD929 2SD933H


    OCR Scan     		PDF 2SD917 2SD920 2SD921 2SD922 2SD923 2SD929 2SD933H 2SD946 2SB789 2SD968 2SD920 T03B 2SD983 2SB793 2SD947 2SD917 2SD922 2SD923