D2462
Abstract: 2SB1602 2SD2462
Text: 2SD2462 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2462 Power Amplifier Applications • Unit: mm High DC current gain: hFE 1 = 800 to 3200 (VCE = 5 V, IC = 0.2 A) · Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 1 A, IB = 10 mA) · Complementary to 2SB1602
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2SD2462
2SB1602
D2462
2SB1602
2SD2462
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D2462
Abstract: 2SB1602 2SD2462
Text: 2SD2462 東芝トランジスタ シリコンNPN三重拡散形 2SD2462 ○ 低周波電力増幅用 • • 単位: mm 直流電流増幅率が高い。: hFE 1 = 800~3200 (VCE = 5 V, IC = 0.2 A) 飽和電圧が低い。 : VCE (sat) = 0.4 V (標準) (IC = 1 A, IB = 10 mA)
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2SD2462
2SB1602
20070701-JA
D2462
2SB1602
2SD2462
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d2462
Abstract: 2SD2462 2SB1602
Text: 2SD2462 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2462 Power Amplifier Applications • Unit: mm High DC current gain: hFE 1 = 800 to 3200 (VCE = 5 V, IC = 0.2 A) • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 1 A, IB = 10 mA) •
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2SD2462
2SB1602
d2462
2SD2462
2SB1602
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D2462
Abstract: 2SD2462 2SB1602
Text: 2SD2462 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2462 Power Amplifier Applications Unit: mm • High DC current gain: hFE 1 = 800 to 3200 (VCE = 5 V, IC = 0.2 A) • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 1 A, IB = 10 mA) •
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2SD2462
2SB1602
D2462
2SD2462
2SB1602
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D2462
Abstract: 2SB1602 2SD2462
Text: 2SD2462 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2462 Power Amplifier Applications Unit: mm • High DC current gain: hFE 1 = 800 to 3200 (VCE = 5 V, IC = 0.2 A) • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 1 A, IB = 10 mA) •
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2SD2462
2SB1602
D2462
2SB1602
2SD2462
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PDF
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d2462
Abstract: No abstract text available
Text: 2SD2462 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2462 Power Amplifier Applications Unit: mm • High DC current gain: hFE 1 = 800 to 3200 (VCE = 5 V, IC = 0.2 A) • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 1 A, IB = 10 mA) •
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2SD2462
2SB1602
d2462
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PDF
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SD2462 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2462 PO W ER AM PLIFIER APPLICATIONS. • High DC Current Gain ; hpg i = 800~3200 Low Collector Saturation Voltage : VCE(sat) = °-4V (Typ.) Complementary to 2SB1602 • • M A X IM U M RATINGS (Ta = 25°C)
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2SD2462
2SB1602
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2SB1602
Abstract: 2SD2462
Text: TO SH IBA 2SD2462 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. • • • SILICON NPN TRIPLE DIFFUSED TYPE 2SD2462 Unit in mm 8.0 ± 0.2 High DC Current Gain : ^FE l = 800~3200 Low Collector Saturation Voltage : v CE(sat) = °-4V (TyP-) Complementary to 2SB1602
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2SD2462
2SB1602
2SD2462
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Untitled
Abstract: No abstract text available
Text: 2SB1602 SILICON PNP TRIPLE DIFFUSED TYPE DARLINGTON POWER PO W ER AM PLIFIER APPLICATIO NS • • U n it in mm High DC Current Gain : hFE = 300-1000 (V c e = - 5 V , I c = -0 .5 A ) Low Collector Saturation Voltage. : v C E(sat)= —0.4V (Typ.) ( Iq = —1A, lB = -1 0 m A )
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2SB1602
--60V,
--10mA
--10V,
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2SB1602
Abstract: 2SD2462
Text: TOSHIBA 2SD2462 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2462 PO W ER AM PLIFIER APPLICATIONS. • High DC Current Gain : ^FE 1 = 800~3200 Low Collector Saturation Voltage : v CE(sat) = °-4V (Typ.) Complementary to 2SB1602 • • M A X IM U M RATINGS (Ta = 25°C)
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2SD2462
2SB1602
2SD2462
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PDF
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d2462
Abstract: No abstract text available
Text: TOSHIBA 2SD2462 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2S D 24 62 Unit in mm PO W ER AM PLIFIER APPLICATIONS. • High DC Current Gain : hpE 1 —800^3200 Low Collector Saturation Voltage : VCE (sat) = °-4V (TyP*) Complementary to 2SB1602 •
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2SD2462
2SB1602
d2462
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SB1602 TO SHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 602 POWER AMPLIFIER APPLICATIONS • High DC Current Gain ; hjrg i = 300~ 1000 Low Collector Saturation Voltage : v CE(sat)= -0.5V (Typ.) Complementary to 2SD2462 • • M A X IM U M RATINGS (Ta = 25°C)
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2SB1602
2SD2462
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2SB1602
Abstract: 2SD2462
Text: TOSHIBA 2SB1602 TO SHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 602 POWER AMPLIFIER APPLICATIONS • High DC Current Gain : ^FE 1 = 300~1000 Low Collector Saturation Voltage : VCE (sat)“ —0.5y (Typ.) Complementary to 2SD2462 • • M A X IM U M RATINGS (Ta = 25°C)
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2SB1602
2SD2462
100ms
2SB1602
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SB1602 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS • SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 6 Q2 High DC Current Gain : ^FE 1 = 300—1000 Low Collector Saturation Voltage • VCE (sat)= —0-5V (Typ.) Complementary to 2SD2462 • •
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2SB1602
2SD2462
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2SB1602
Abstract: 2SD2462
Text: TO SH IBA 2SD2462 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • • SILICON NPN TRIPLE DIFFUSED TYPE 2SD2462 Unit in mm 8.0 ± 0.2 High DC Current Gain : ^FE l = 800~3200 Low Collector Saturation Voltage : v CE(sat) = °-4V (TyP-) Complementary to 2SB1602
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2SD2462
2SB1602
2SD2462
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15J102
Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811
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2SA949U50VI
2AC2229
2SA1145U50V)
2SC2705(
2SC2230
2SA817A
2SC1627A
2SA1811
2SC4707
2SA965
15J102
Transistor 2SC4288A
Transistor 2SA 2SB 2SC 2SD
Drive IC 2SC3346
2sa 102 transistor
transistor 2SA 101
50J301
02SC5030
T15J103
Driver IC 2SC3346
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2sC5200, 2SA1943, 2sc5198
Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428
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2SA817A
2SA940
2SA949
2SA965
2SA966
2SA1012
2SA1013
2SA1020
2SA1145
2SA1160
2sC5200, 2SA1943, 2sc5198
GTI5Q101
2sc5039
2SC4532
2SD2088
2SC3303
2sC5200, 2SA1943
2SA1803
2sc4408
GT10G102
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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TA8172AF
Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16
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015Z10
015Z11
015Z12
015Z2
015Z3
TA8172AF
TB 1226 BN
TA8859P
mg75n2ys40
t6961A
TA8242AK
ta8644n
7378P
ta8310
7628P
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