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Toshiba America Electronic Components 2SB1457(TE6,F,M) TRANS PNP 100V 2A TO92MOD
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Toshiba America Electronic Components 2SB1457,T6TOTOF(J TRANS PNP 100V 2A TO92MOD
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Toshiba America Electronic Components 2SB1457(T6DW,F,M) TRANS PNP 100V 2A TO92MOD
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Toshiba America Electronic Components 2SB1457(T6CNO,A,F) TRANS PNP 100V 2A TO92MOD
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Toshiba America Electronic Components 2SB1457(T6CANO,F,M TRANS PNP 100V 2A TO92MOD
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DigiKey	2SB1457(T6CANO,F,M	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now

2SB1457 Datasheets (13)

Part	Manufacturer	Description	Datasheet Type	PDF
2SB1457	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SB1457	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SB1457	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SB1457	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SB1457	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SB1457	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SB1457	Toshiba	Silicon PNP transistor for micro motor drive, hammer drive applications power switching and power amplifier applications	Scan	PDF
2SB1457,T6TOTOF(J	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 2A 100V TO226-3	Original	PDF
2SB1457,T6YMEF(M	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 2A 100V TO226-3	Original	PDF
2SB1457(T6CANO,F,M	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 2A 100V TO226-3	Original	PDF
2SB1457(T6CNO,A,F)	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 2A 100V TO226-3	Original	PDF
2SB1457(T6DW,F,M)	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 2A 100V TO226-3	Original	PDF
2SB1457(TE6,F,M)	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 2A 100V TO226-3	Original	PDF

2SB1457 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
b1457 Abstract: B1457 transistor 2SB1457 Text: 2SB1457 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington 2SB1457 Micro Motor Drive, Hammer Drive Applications Power Switching Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1 A) • Low saturation voltage: VCE (sat) = −1.5 V (max)	Original	2SB1457 b1457 B1457 transistor 2SB1457	PDF
B1457 Abstract: 2SB1457 Text: 2SB1457 シリコンPNPエピタキシャル形ダーリントン接続東芝トランジスタ 2SB1457 ○ マイクロモータドライブハンマドライブ用 ○ スイッチング用 ○ 電力増幅用 • • 単位: mm 直流電流増幅率が高い。 : hFE = 2000 (最小) (VCE = −2 V, IC = −1 A)	Original	2SB1457 O-92MOD B1457 2SB1457	PDF
B1457 transistor Abstract: No abstract text available Text: 2SB1457 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington 2SB1457 Micro Motor Drive, Hammer Drive Applications Power Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1 A)	Original	2SB1457 B1457 transistor	PDF
b1457 Abstract: B1457 transistor Text: 2SB1457 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington 2SB1457 Micro Motor Drive, Hammer Drive Applications Power Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1 A)	Original	2SB1457 b1457 B1457 transistor	PDF
B1457 Abstract: 2SB1457 Text: 2SB1457 東芝トランジスタシリコンPNPエピタキシャル形 2SB1457 ○ マイクロモータドライブハンマドライブ用 ○ スイッチング用 ○ 電力増幅用 • • 単位: mm 直流電流増幅率が高い。 : hFE = 2000 最小 (VCE = −2 V, IC = −1 A)	Original	2SB1457 O-92MOD 20070701-JA B1457 2SB1457	PDF
B1457 transistor Abstract: b1457 2SB1457 Text: 2SB1457 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington 2SB1457 Micro Motor Drive, Hammer Drive Applications Power Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1 A)	Original	2SB1457 B1457 transistor b1457 2SB1457	PDF
B1457 Abstract: B1457 transistor 2SB1457 Text: 2SB1457 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington 2SB1457 Micro Motor Drive, Hammer Drive Applications Power Switching Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1 A) • Low saturation voltage: VCE (sat) = −1.5 V (max)	Original	2SB1457 B1457 B1457 transistor 2SB1457	PDF
GT30F131 Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01	PDF
IGBT GT30F124 Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 Text: 東芝半導体製品総覧表 2011 年 1 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075	PDF
2sC5200, 2SA1943 Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent Text: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current	Original	BCE0016D 2sC5200, 2SA1943 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent	PDF
smd transistor h2a Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output	Original	BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A	PDF
GT30F124 Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123	PDF
transistor bc 245 Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243	Original	SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122	PDF
2SA1941 amp circuit Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943 Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including	Original	BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943	PDF

2SB1457 Abstract: No abstract text available Text: T O S H IB A 2SB1457 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON 2 S B 1 457 Unit in mm MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. POWER SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATION. • • 5.1 MAX High DC Current Gain : hpE -200 (Min.) (Vç;e = —2V, Iç; = —1A)	OCR Scan	2SB1457 75MAX 2SB1457	PDF
lm 383 ic Abstract: No abstract text available Text: 2SB1457 SILICON PNP EPITAXIAL TYPE DARLINGTON POWER Unit in mm M ICRO M OTOR DRIVE, HAM M ER DRIVE APPLICATION S. POW ER SW ITCHIN G A PPLICATIO N S. POW ER AM PLIFIER APPLICATIO N . • • High DC C urrent Gain : hpE = 200 (M in.)(V cE= -2 V , Ic = - 1 A )	OCR Scan	2SB1457 --30V I00//8Ì lm 383 ic	PDF
aaBO Abstract: No abstract text available Text: TOSHIBA 2SB1457 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON 2 S B 1 457 Unit in mm MICRO MOTOR DRIVE, H AM M ER DRIVE APPLICATIONS. 5.1 MAX PO W ER SWITCHING APPLICATIONS. PO W ER AM PLIFIER APPLICATION. High DC Current Gain : hpE = 200 (Min.) (V(jE = —2V, Iç; = —1A)	OCR Scan	2SB1457 75MAX aaBO	PDF
2SB1457 Abstract: wv1 transistor Text: TO SH IBA 2SB1457 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON 2 S B 1 457 Unit in mm MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS 5.1 MAX. POWER SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATION • • High DC Current Gain : h^E = 200 (Min.) (V'ce = - 2V,	OCR Scan	2SB1457 75MAX. 2SB1457 wv1 transistor	PDF
2SB1457 Abstract: No abstract text available Text: TO SH IBA 2SB1457 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON 2 S B 1 457 Unit in mm MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. POWER SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATION. • • 5.1 MAX High DC Current Gain : hpE -200 (Min.) (Vç;e = —2V, Iç; = —1A)	OCR Scan	2SB1457 75MAX 2SB1457	PDF
2SD2449 Abstract: 2SD1509 2SD1410 2S01088 2SC982TM 2SD2088(F) 2sd799 Text: Darlington Transistors F1 W c E O 30V 50V 60V 80V 100V 160V 250V 300V 400V 450V 2SC982TM 0.3A 1.SA 40V 2SD1140 2SD1224 2SD1508 2SD1631 2SD2481 2SB1067 2SD1658 2A 2SD1509 2SD2088 2SD2208 2SB1411 2SD2206 2SB1457 2SB1617 2SD2480 2SB677 2SD687 3A 4A SA 2SD2129	OCR Scan	2SC982TM 2SD1140 2SD1224 2SD1508 2SD1631 2SD2481 2SB677 2SD687 2SB907 2SD1222 2SD2449 2SD1509 2SD1410 2S01088 2SC982TM 2SD2088(F) 2sd799	PDF
Untitled Abstract: No abstract text available Text: T O SH IB A 2SB1457 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. POWER SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATION. Unit in mm 5.1 M A X • High DC Current Gain : h;pE = 200 (Min.) (V q £ = —2V, I ç = —1A)	OCR Scan	2SB1457 75MAX	PDF
15J102 Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346 Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811	OCR Scan	2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346	PDF
2sC5200, 2SA1943, 2sc5198 Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102 Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428	OCR Scan	2SA817A 2SA940 2SA949 2SA965 2SA966 2SA1012 2SA1013 2SA1020 2SA1145 2SA1160 2sC5200, 2SA1943, 2sc5198 GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102	PDF
TA8172AF Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16	OCR Scan	015Z10 015Z11 015Z12 015Z2 015Z3 TA8172AF TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P	PDF

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2SB1457 Search Results

2SB1457 Price and Stock

Toshiba America Electronic Components 2SB1457(TE6,F,M)

Toshiba America Electronic Components 2SB1457,T6TOTOF(J

Toshiba America Electronic Components 2SB1457(T6DW,F,M)

Toshiba America Electronic Components 2SB1457(T6CNO,A,F)

Toshiba America Electronic Components 2SB1457(T6CANO,F,M

2SB1457 Datasheets (13)

2SB1457 Datasheets Context Search

b1457

B1457

B1457 transistor

b1457

B1457

B1457 transistor

B1457

GT30F131

IGBT GT30F124

2sC5200, 2SA1943

smd transistor h2a

GT30F124

transistor bc 245

2SA1941 amp circuit

2SB1457

lm 383 ic

aaBO

2SB1457

2SB1457

2SD2449

Untitled

15J102

2sC5200, 2SA1943, 2sc5198

TA8172AF