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    2SA1683 Search Results

    2SA1683 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SA1683 Sanyo Semiconductor Transistor - Low-Frequency General-Purpose Amplifier, Low-Frequency Power Amplifier Applications Original PDF
    2SA1683 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1683 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1683 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1683 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1683 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1683 Sanyo Semiconductor High-Frequency General-Purpose Amp, High-Frequency Power Amp Applications Scan PDF
    2SA1683R Sanyo Semiconductor PNP/NPN Epitaxial Planar Silicon Transistors Scan PDF
    2SA1683S Sanyo Semiconductor PNP/NPN Epitaxial Planar Silicon Transistors Scan PDF
    2SA1683T Sanyo Semiconductor PNP/NPN Epitaxial Planar Silicon Transistors Scan PDF

    2SA1683 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1683

    Abstract: EN3012
    Text: Ordering number:EN3012 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1683/2SC4414 Low-Frequency General-Purpose Amplifier, Low-Frequency Power Amplifier Applications Features Package Dimensions • Adoption of FBET process. · High breakdown voltage : VCEO>80V.


    Original     		PDF EN3012 2SA1683/2SC4414 2SA1683/2SC4414] 2SA1683 2SA1683 EN3012

    2SA1683

    Abstract: N1003 2SC4414 ITR04083 ITR04084 ITR04085
    Text: Ordering number:ENN3012 PNP Epitaxial Planar Silicon Transistors 2SA1683/2SC4414 Low-Frequency General-Purpose Amplifier, Low-Frequency Power Amplifier Applications Features Package Dimensions • Adoption of FBET process. · High breakdown voltage : VCEO>80V.


    Original     		PDF ENN3012 2SA1683/2SC4414 2SA1683/2SC4414] 2SA1683 2SA1683 N1003 2SC4414 ITR04083 ITR04084 ITR04085

    N3012

    Abstract: 2SA1683 2SC4414 ITR04083 ITR04084 ITR04085
    Text: 注文コード No. N 3 0 1 2 2SA1683/2SC4414 No. N3012 N3099 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ 2SA1683 / 2SC4414 特長 ・FBET プロセス採用。 ・高耐圧である VCEO ＞ 80V。 低周波一般増幅 ,


    Original     		PDF 2SA1683/2SC4414 N3012 N3099 2SA1683 2SC4414 2SA1683 400mA ITR04095 N3012 2SC4414 ITR04083 ITR04084 ITR04085

    SA1683

    Abstract: A1683 SA168 2SA1683 CS19 SA16 5C44
    Text: Ordering number : EN 3Q12 i 2SA1683/2SC4414 No.3012 PNP/NPN Epitaxial Planar Silicon Transistors SA YYO i Low-Frequency General-Purpose Amp, Low-Frequency Power Amp Applications Features •Adoption of FBET process ■High breakdown voltage : Vqeo > 80V : 2SA1683


    OCR Scan     		PDF 2SA1683/2SC4414 2SA1683 SA1683 A1683 SA168 CS19 SA16 5C44

    DD15S30

    Abstract: 2SA1683 60V PNP TO-92 DD15S
    Text: Ordering number: EN 3 0 1 2 2SA1683/2SC4414 No.3012 PNP/NPN Epitaxial P lanar Silicon Transistors SA X YO i Low-Frequency General-Purpose Amp, Low-Frequency Power Amp Applications F e a tu re s - Adoption of FBET process • High breakdown voltage: Vceo > 80V


    OCR Scan     		PDF 2SA1683/2SC4414 2SA1683 2034/2034A SC-43 7tlt17D7b DD15S30 2SA1683 60V PNP TO-92 DD15S

    SS2205

    Abstract: 2SA1628 2SB814 HSI 527 2SA1284 2SA1178 2SA1283 2SA1586 2SB1043 2SA934
    Text: 33 tt « Manuf. ft 3 SANYO M TOSHIBA m « T y p e No. o a ED - ±L HITACHI S ± FUJITSU 35 ta T DTA123YS 1505 n m w * 2SA 1506 m w m ,^ 2SA 1 507 , 2SA 1508 2SA 1509 2SA 1510 ' 2SA 1511 /• = ft 2SA 1512 & T 2SA 1 5 1 3 -■ a 2SA 1514 □ - A 2SA1257 2S A 1 1 6 3


    OCR Scan     		PDF SS2205 UN411H RT1P234S DTA123YS 2SA1781 2SA1162 2SB736 2SB709A 2SA1235 2SA1753 SS2205 2SA1628 2SB814 HSI 527 2SA1284 2SA1178 2SA1283 2SA1586 2SB1043 2SA934

    2SB1406

    Abstract: 2SK715
    Text: Product Selection Guide by Function Very High Frequency Applications Classified by package and arran g ed in order of decreasing fr. M inus sign for P N P is om itted due to space lim itations. PG tM A G ,N F:f= 0.9G H z Type N um ber Pilgt* 2SC3779 NP NP


    OCR Scan     		PDF 2SC3779 2SC3778 2SC3777 2SC3776 2SB1406 2SK715

    TO-32-070

    Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
    Text: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)


    OCR Scan     		PDF T0220ML TO-32-070 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124

    2SC4415

    Abstract: 2SC4418 2SC4398 2SC4427 2SC4393 2SC4394 2SC4396 2SC4397 2SC4399 2SC4400
    Text: - 200 - W. n Ta=25T . *EP(àTc=25‘C) m % ffl iâ , , VCEO (V) 2SC4393 2SC4394 2SC4396 2SC4397 2SC4398 2SC4399 2SC4400 2SC4401 2SC4402 2SC4403 2SC4404 2SC4405 2SC4406 2SC4407 2SC4408 2SC4409 2SC4410 2SC4411 2SC4412 2SC4413 2SC4414 2SC4415 2SC4416 2SC4417


    OCR Scan     		PDF 2SC4393 2SC4394 2SC4396 2SC4397 2SC4398 2SC4399 2SC4400 900MHz 2SC4416 2SC4417 2SC4415 2SC4418 2SC4398 2SC4427 2SC4393 2SC4394 2SC4396 2SC4399 2SC4400

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan     		PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    2SC308

    Abstract: 2SA1699 2SA1392
    Text: S m a l 1- s i g n a l SA\YO Transistors For low noise, h i g h v o l t a g e a n d g e n e r a l use We have other smal 1-signal transistors which are not included in any classified types nor packages in this document. They are for low noise, high voltage and general use.


    OCR Scan     		PDF SC-51 2SA1683 2SC4414 2SA1392 2SC3383 T0-126 2SA1450 2SB631, 2SD600, O-126 2SC308 2SA1699

    AUDIO AMPLIFIER

    Abstract: audio amplifier POWER TRANSISTORS 2SA1766 2SC3650 2SC3651 2SC4390 2SC4705 2SK304 2SK404 2SK546
    Text: Absolute maximum ratings Device Package type Electrical characteristics Ta = 25 "C Icbo max @ VCB Applications VCBO (V) Vceo (V) VEBO (V) lc (A) PC (W ) Tj (C ) hFE (£• Vce - lc Icbo max (|iA) VCB (V) hFE 0.1/0.1 20/40 fT @ Vce - lc VcE (V) lc (mA) fr


    OCR Scan     		PDF FC150 2SC3651 2SC3650 2SA1766 2SC4705 2SC4390 2SK596 2SK546 2SA1813/2SC4413) 2SK304 AUDIO AMPLIFIER audio amplifier POWER TRANSISTORS 2SK404

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan     		PDF

    2SA1249

    Abstract: 2SB63
    Text: S m a l 1- s ig n al ÄMIVO Transistors For low noise, h ig h v o l t a g e and general use ffe have o t h e r s m a l l - s i g n a l low n o i s e , t r a n s i s t o r s which a r e not inc lud ed in any c l a s s i f i e d types nor packages in t h i s document.


    OCR Scan     		PDF 2SA1016 2SC2362, 2SA1391 2SC3382 SC-51 O-126 2SA1450 2SC3708 2SB63 2SD600 2SA1249

    2SA1692

    Abstract: 2SA1719 2SA1712 2SA1715 2SA1107 2SC4490 MP40 2SA1699 2sa1115 2SA1680
    Text: - 46 - m X Ë fà s ít £ ffl & Vcbo V 2SA1678 Hi# INV/SW/D ' 50 (Ta=25‘ C , * E P ( á T c = 2 5 cC ) VcEO (V} - 50 I c (DC) 0.15 2SA1680 PA/PSW - 60 -50 -2 0. 9 PA/PSW '60 - 50 -2 0.5 HV D -300 -300 -0.05 0. 25 -100 -80 -0.5 0. 3 -40 -20 -0.15 0.15


    OCR Scan     		PDF 2SA1678 2SA1680 2SA1681 2SA168Z 2SA1683 2SA1685 2SA1707 2SC4488 2SA1708 2SC4489 2SA1692 2SA1719 2SA1712 2SA1715 2SA1107 2SC4490 MP40 2SA1699 2sa1115 2SA1680