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    2SA1683

    Abstract: N1003 2SC4414 ITR04083 ITR04084 ITR04085
    Text: Ordering number:ENN3012 PNP Epitaxial Planar Silicon Transistors 2SA1683/2SC4414 Low-Frequency General-Purpose Amplifier, Low-Frequency Power Amplifier Applications Features Package Dimensions • Adoption of FBET process. · High breakdown voltage : VCEO>80V.


    Original     		ENN3012 2SA1683/2SC4414 2SA1683/2SC4414] 2SA1683 2SA1683 N1003 2SC4414 ITR04083 ITR04084 ITR04085 PDF

    N3012

    Abstract: 2SA1683 2SC4414 ITR04083 ITR04084 ITR04085
    Text: 注文コード No. N 3 0 1 2 2SA1683/2SC4414 No. N3012 N3099 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ 2SA1683 / 2SC4414 特長 ・FBET プロセス採用。 ・高耐圧である VCEO ＞ 80V。 低周波一般増幅 ,


    Original     		2SA1683/2SC4414 N3012 N3099 2SA1683 2SC4414 2SA1683 400mA ITR04095 N3012 2SC4414 ITR04083 ITR04084 ITR04085 PDF