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    2SB1020 Search Results

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    2SB1020 Price and Stock

    Toshiba America Electronic Components 2SB1020

    POWER BIPOLAR TRANSISTOR, 7A I(C), 100V V(BR)CEO, 1-ELEMENT, PNP, SILICON, PLASTIC/EPOXY, 3 PIN
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    Quest Components 2SB1020 87
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    2SB1020 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SB1020 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SB1020 Unknown Scan PDF
    2SB1020 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB1020 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB1020 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1020 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1020 Unknown Cross Reference Datasheet Scan PDF
    2SB1020 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1020 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SB1020 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1020 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SB1020 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1020 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SB1020 Toshiba Silicon PNP Darlington Transistor Scan PDF
    2SB1020A Toshiba TRANS DARLINGTON BJT PNP 100V 7A 3(2-10R1A) Original PDF
    2SB1020(A) Unknown Silicon PNP-darlington-tranistor+diode Scan PDF
    2SB1020A Toshiba Silicon PNP triple diffused type transistor for high power switching, hammer drive, pulse motor drive applications Scan PDF
    2SB1020A Toshiba Silicon PNP Triple Diffused Type Transistor Scan PDF

    2SB1020 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB1020

    Abstract: 2SD1415
    Text: JMnic Product Specification 2SB1020 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High DC current gain ・Low saturation voltage ・Complement to type 2SD1415 APPLICATIONS ・High power switching applications ・Hammer drive,pulse motor drive applications


    Original     		PDF 2SB1020 O-220Fa 2SD1415 O-220Fa) -14mA -100V; 2SB1020 2SD1415

    2SD1415

    Abstract: 2SB1020 3A 100V npn LOW SATURATION VOLTAGE
    Text: Inchange Semiconductor Product Specification 2SD1415 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High DC current gain ·Low saturation voltage ·Complement to type 2SB1020 ·DARLINGTON APPLICATIONS ·High power switching applications


    Original     		PDF 2SD1415 O-220Fa 2SB1020 O-220Fa) 2SD1415 2SB1020 3A 100V npn LOW SATURATION VOLTAGE

    B1020A

    Abstract: 2SB1020A 2SD1415A
    Text: 2SB1020A シリコンPNP三重拡散形 ダーリントン接続 東芝トランジスタ 2SB1020A 通 信 工 業 用 ○ 大電力スイッチング用 ○ ハンマドライブパルスモータドライブ用 単位: mm • 直流電流増幅率が高い。 : hFE = 2000 (最小) (VCE = −3 V, IC = −3 A)


    Original     		PDF 2SB1020A 2SD1415A 2-10R1A 20070701-JA B1020A 2SB1020A 2SD1415A

    2SD1415

    Abstract: 2SB1020 NPN POWER DARLINGTON TRANSISTORS
    Text: SavantIC Semiconductor Product Specification 2SD1415 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High DC current gain ·Low saturation voltage ·Complement to type 2SB1020 ·DARLINGTON APPLICATIONS ·High power switching applications


    Original     		PDF 2SD1415 O-220Fa 2SB1020 O-220Fa) 2SD1415 2SB1020 NPN POWER DARLINGTON TRANSISTORS

    B1020A

    Abstract: No abstract text available
    Text: 2SB1020A TOSHIBA Transistor Silicon PNP Triple Diffused Type Darlington Power 2SB1020A High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = −3 V, IC = −3 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A)


    Original     		PDF 2SB1020A 2SD1415A B1020A

    B1020A transistor

    Abstract: No abstract text available
    Text: 2SB1020A TOSHIBA Transistor Silicon PNP Triple Diffused Type Darlington Power 2SB1020A High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = −3 V, IC = −3 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A)


    Original     		PDF 2SB1020A 2SD1415A B1020A transistor

    2SB1020

    Abstract: 2SD1415
    Text: Inchange Semiconductor Product Specification 2SB1020 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High DC current gain ・Low saturation voltage ・Complement to type 2SD1415 APPLICATIONS ・High power switching applications ・Hammer drive,pulse motor drive applications


    Original     		PDF 2SB1020 O-220Fa 2SD1415 O-220Fa) -100V; 2SB1020 2SD1415

    2SB1020

    Abstract: 2SD1415
    Text: SavantIC Semiconductor Product Specification 2SB1020 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·High DC current gain ·Low saturation voltage ·Complement to type 2SD1415 APPLICATIONS ·High power switching applications ·Hammer drive,pulse motor drive applications


    Original     		PDF 2SB1020 O-220Fa 2SD1415 O-220Fa) -14mA -100V; 2SB1020 2SD1415

    B1020A

    Abstract: 2SB1020A 2SD1415A
    Text: 2SB1020A TOSHIBA Transistor Silicon PNP Triple Diffused Type Darlington Power 2SB1020A High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = −3 V, IC = −3 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A)


    Original     		PDF 2SB1020A 2SD1415A B1020A 2SB1020A 2SD1415A

    B1020A

    Abstract: B1020A transistor 2SB1020A 2SD1415A
    Text: 2SB1020A TOSHIBA Transistor Silicon PNP Triple Diffused Type Darlington Power 2SB1020A High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = −3 V, IC = −3 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A)


    Original     		PDF 2SB1020A 2SD1415A B1020A B1020A transistor 2SB1020A 2SD1415A

    2SB1020

    Abstract: 2SD1415 2sd1415 transistor transistor 2sb1020
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor DESCRIPTION •High DC C urrent Gain: hFE= 2000 Min. @IC= -3A ·Low Collector Saturation Voltage: VCE(sat)= -1.5V(Max)@IC= -3A ·Good Linearity of hFE ·Complement to Type 2SD1415


    Original     		PDF 2SD1415 -14mA -100V; 2SB1020 2SD1415 2sd1415 transistor transistor 2sb1020

    Untitled

    Abstract: No abstract text available
    Text: 2SB1020 SILICON PNP TRIPLE DIFFUSED TYPE DARLINGTON POWER HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. I Q 3 MAX. 7.0 FEA TU R ES: . High DC Current Gain: hpE=2000(Min.) (at V c e =-3V, Ic =-3A


    OCR Scan     		PDF 2SB1020 2SD1415.

    2SB1547

    Abstract: 2SB1301 1409L 2SB1193 2SA1719 hitachi 2sb 1391 2SB1226 2SB1255 2SB1335 2SA1718
    Text: - tt m « Type No. ! SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2 SB 1388 13 89 1390 1391 1392 1393 ¡394 1395 , 1396 1397 « Manuf. a a B a it it ÍL fâ T H = H = H ft SANYO 2SB1223 2SB1224 2SB1228 2SA1469 2SB1133 ft ft ft ft B TOSHIBA 2SB1UÜU 2SB1024 2SB1022 2SB1020


    OCR Scan     		PDF ZSB113Ã 2SB1223 2SB1024 2SA1718 2SB950 2SB1342 2SB1224 2SB1022 2SA1719 2SB1464 2SB1547 2SB1301 1409L 2SB1193 2SA1719 hitachi 2sb 1391 2SB1226 2SB1255 2SB1335 2SA1718

    2SB1020

    Abstract: No abstract text available
    Text: TO SHIBA TO SHIBA TRANSISTOR 2SB1020 SILICON PNP TRIPLE DIFFUSED TYPE D ARLING TO N POWER 2 S B 1 020 HIGH POWER SW ITCHING APPLICATIONS. H A M M E R DRIVE, PULSE M O TO R DRIVE APPLICATIONS. INDUSTRIAL APPLICATIONS . Unit in mm High DC Current Gain : hFE = 2000 (Min.) (at VCE = - 3V, IC = - 3A)


    OCR Scan     		PDF 2SB1020 2SD1415. 961001EAA2 2SB1020

    T0220

    Abstract: BDT62C 2SB1647 BC516 BCV26 BD678 BD680 BDX47 BSP61 T0-220
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 C O C TaB H bie TpaH 3M C TO pbl PNP copTMpoBKa no TOKy KonneKTopa Kofl: BC516 BCV26 MPSA64 BDX47 BSP61 TIP117 BD678 BD680 BD680A BD682 MJF127 TIP125 TIP127 2SB1624 2SB1020 2SB1254


    OCR Scan     		PDF BC516 BCV26 MPSA64 BDX47 T0126 BSP61 OT223 TIP117 T0220 BD678 T0220 BDT62C 2SB1647 BD680 T0-220

    Untitled

    Abstract: No abstract text available
    Text: 2SB1020A TOSHIBA TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE DARLINGTON POWER 7 < ; R i n 7 H A INDUSTRIAL APPLICATIONS Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • High DC Current Gain : hFE = 2000 (Min.) (at VCE= -3V , I q = -3A )


    OCR Scan     		PDF 2SB1020A 2SD1415A

    2SB1020A

    Abstract: 2SD1415A 2sB102
    Text: TO SH IBA 2SB1020A TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SB1020A HIGH POWER SWITCHING APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 10 ± 0 . 3 r ^ 3 . 2 ± 0.2 -y < tY ' • High DC Current Gain


    OCR Scan     		PDF 2SB1020A 2SD1415A 2SB1020A 2sB102

    Untitled

    Abstract: No abstract text available
    Text: SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS INDUSTRIAL APPLICATIONS U nit in mm HIGH PO W ER SW ITCH IN G APPLICATIONS. H A M M E R DRIVE, PULSE M O T O R DRIVE APPLICATIONS. • • • 2SB1020 High DC Current Gain : hFE = 2000 (Min.) (at V c e = —3V, I c = - 3 A )


    OCR Scan     		PDF 2SB1020 2SD1415.

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SB1020A TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE DARLINGTON PO W ER 2SB1020A HIGH PO W ER SWITCHING APPLICATIONS H A M M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ±0.3 • • • High DC Current Gain


    OCR Scan     		PDF 2SB1020A 2SD1415A

    2SB1020A

    Abstract: 2SD1415A
    Text: TOSHIBA 2SB1020A TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE DARLINGTON PO W ER 2SB1020A HIGH PO W ER SWITCHING APPLICATIONS H A M M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • • INDUSTRIAL APPLICATIONS Unit in mm r High DC Current Gain : hpE = 2000 (Min.) (at VCE= -3V , IC= -3A )


    OCR Scan     		PDF 2SB1020A 2SD1415A 2SB1020A

    2SB1020

    Abstract: 2SD1415 IC AH1
    Text: V U 3 > P N P = *Ü A Ít M & - 2SB1020 U > h > n (2 S B 1 0 2 0 m o /N>7 - K7-f7, / t A X Ï - ÿ - îü x m h '7 - f 7 : h p ß —2000 (ft/J') (VCE = - 3 V , IC = - 3 A ) . : V cE ísat) = - 1 . 5 V ( t t * ) d c = - 3 A ) 2SD1415 i => > 7" 'J > > 9 ') IZ t¿ 19 t t o


    OCR Scan     		PDF 2SB1020 2SD1415 --14m 2SB1020 IC AH1

    MN2488

    Abstract: T0220 T0126 MJ11033-MOT 2SD2390 mn2488 pnp BCV27 BCV47 BD678 BSP61
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 C O C TaB H bie TpaH 3M C TO pbl PNP copTMpoBKa no HanpflweHMro Kofl: BCV27 MPSA64 BC516 BD675A BD678 BSP61 TIP125 BCV47 BD648 BD680 BD680A MJ2501 2N6287 2SB1020 BD682 BD712 BD902 BDV64B BDW84C


    OCR Scan     		PDF BCV27 MPSA64 BC516 BD675A T0126 BD678 BSP61 OT223 TIP125 MN2488 T0220 T0126 MJ11033-MOT 2SD2390 mn2488 pnp BCV47

    b1375

    Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
    Text: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39


    OCR Scan     		PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S b1375 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1

    Transistor 2SA 2SB 2SC 2SD

    Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
    Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)


    OCR Scan     		PDF O-126 O-126 T0-220AB, O-220 2SC4544 2SC4448 2SC3612 2BC4201 Transistor 2SA 2SB 2SC 2SD S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346