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    2SA1015 TOSHIBA Search Results

    2SA1015 TOSHIBA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    2SA1015 TOSHIBA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC1815

    Abstract: 2sa1015 toshiba
    Text: 2SA1015 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1015 Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications • Unit: mm High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max) •


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    PDF 2SA1015 2SC1815. 2SC1815 2sa1015 toshiba

    2sa1015

    Abstract: 2SC1815 ma2580 toshiba 2sa1015
    Text: 2SA1015 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1015 Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications • Unit: mm High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max) •


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    PDF 2SA1015 2SC1815. 2sa1015 2SC1815 ma2580 toshiba 2sa1015

    2sa1015

    Abstract: 2sa1015 datasheet 2sa1015 equivalent 2SC1815 2Sa1015 toshiba
    Text: 2SA1015 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1015 Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications • Unit: mm High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max) ·


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    PDF 2SA1015 2SC1815. 2sa1015 2sa1015 datasheet 2sa1015 equivalent 2SC1815 2Sa1015 toshiba

    2SA1015

    Abstract: 2SC1815 data 2sa1015
    Text: 2SA1015 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1015 Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications • High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max) • Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = −6 V, IC = −150 mA


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    PDF 2SA1015 2SC1815. 2SA1015 2SC1815 data 2sa1015

    2sa1015

    Abstract: 2sa1015 datasheet 2sa1015 equivalent 2sa1015 transistor 2SA1015L transistor 2sa1015 2SC1815 2SA1015 Toshiba
    Text: 2SA1015 L TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Low Noise Amplifier Applications • Unit: mm High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max) · Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = −6 V, IC = −150 mA


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    PDF 2SA1015 2SC1815 2sa1015 datasheet 2sa1015 equivalent 2sa1015 transistor 2SA1015L transistor 2sa1015 2SC1815 2SA1015 Toshiba

    2sa1015

    Abstract: 2SA1015L 2SC1815 2sa1015 transistor
    Text: 2SA1015 L TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Low Noise Amplifier Applications • Unit: mm High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max) • Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = −6 V, IC = −150 mA


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    PDF 2SA1015 2SC1815 2SA1015L 2SC1815 2sa1015 transistor

    2SC1815

    Abstract: 2SA1015L 2SA1015
    Text: 2SA1015 L TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Low Noise Amplifier Applications • Unit: mm High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max) • Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = −6 V, IC = −150 mA


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    PDF 2SA1015 2SC1815 2SC1815 2SA1015L

    25F1B

    Abstract: 2SC1815 2SA1015L 2SC1815 2SA1015
    Text: 2SA1015 L TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Low Noise Amplifier Applications • Unit: mm High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max) • Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = −6 V, IC = −150 mA


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    PDF 2SA1015 2SC1815 25F1B 2SC1815 2SA1015L 2SC1815 2SA1015

    Untitled

    Abstract: No abstract text available
    Text: 2SA1015 TOSHIBA 2SA1015© TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY AM PLIFIER APPLICATIONS LO W NOISE AM PLIFIER APPLICATIONS • High Voltage and High Current : V q E q = _ 50V (Min.), Iq = - 150mA (Max.) Excellent hFE Linearity


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    PDF 2SA1015Â 150mA 2SC1815Ã Temperatu00 961001EAA2'

    2SA1015

    Abstract: toshiba 2sa1015 2sc1815a 2SC1815
    Text: 2SA1015 TO SH IBA 2SA1015© TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY AMPLIFIER APPLICATIONS LOW NOISE AMPLIFIER APPLICATIONS • • • • High Voltage and High Current : V çjeO = - 50V (Min.), 10 = - 150mA (Max.)


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    PDF 2SA1015Â 150mA 2SC1815Â 2SA1015 toshiba 2sa1015 2sc1815a 2SC1815

    2sa1015

    Abstract: 2SA603 2SA1255 2SA638 2SA673 2SA778 2SA821 2SA838 2SA921 2SA952
    Text: - M £ Type No. tt « Manuf. H i# SANYO K 2Ê TOSHIBA * 2 SA 37 \0s ^ ' * * 2SA 38 ^ * * 2SA 39 ii M. 2SA 45 ¡K s 2SA1015 * 2SA 49 ï s 2SA1015 * T 2SA 50 t«^-' 2SA 51 * 2SA 52 ♦ 2SA 53 ♦ 2SA 119 drii ♦ 2SA 120 *±a * 2SA 304 ^ NEC B 1L HITACHI


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    PDF 2SA1015 2SA10Ã 2SA673 2sa1015 2SA603 2SA1255 2SA638 2SA673 2SA778 2SA821 2SA838 2SA921 2SA952

    70H40

    Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
    Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©


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    PDF 2SA1162 2SA1163 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 70H40 transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr

    2sa1015 transistor

    Abstract: 2sc1815a 2SA1015 transistor 2sa1015 2sc1815
    Text: TOSHIBA 2SA1015 Transistor U nit in m m Silicon PNP Epitaxial Type PCT Process 5.1 MA X . Audio Frequency General Purpose Amplifier Applications Features • High Voltage and High Current. - Vceo = -50V (Min.), Ic = 150mA (Max.) • Excellent hFE Linearity


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    PDF 2SA1015 150mA -150mA 2SC1815 2sa1015 transistor 2sc1815a 2SA1015 transistor 2sa1015 2sc1815

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1015 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 015 AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS DRIVER STAGE AM PLIFIER APPLICATIONS • High Voltage and High Current. : V c e O - —50V (Min.), 1^ = —150mA (Max.)


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    PDF 2SA1015 150mA 2SC1815. 961001EAA2'

    2SC1815C

    Abstract: 2SC1815C0
    Text: TOSHIBA TRANSISTOR. SEMICONDUCTOR TO SHIBA TECHNICAL 2 S A 1 01 5 DATA SILICON PNP EPITAXIAL TYPE PCT PROCESS (2SA1015©) Unit in mm AUDIO FREQUENCY AM PLIFIER APPLICATIONS LOW NOISE AMPLIFIER APPLICATIONS • • • • High Voltage and High Current


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    PDF 2SA1015 2SA1015© --150mA 2SC1815C0 -150O 2SC1815C

    2SA1015

    Abstract: 2SC1815 A101 2sc1815 toshiba transistor 2sa1015
    Text: TOSHIBA 2SA1015 2 S A 1 015 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS . 5.1 MAX. • High Voltage and High Current. : Vç;eO = - 50V (Min.), I = — 150mA (Max.)


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    PDF 2SA1015 150mA 2SC1815. 2SA1015 2SC1815 A101 2sc1815 toshiba transistor 2sa1015

    2SA1015

    Abstract: 2SC1815
    Text: TOSHIBA 2SA1015 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 015© AUDIO FREQUENCY AM PLIFIER APPLICATIONS Unit in mm LO W NOISE AM PLIFIER APPLICATIONS • . 5.1 M AX. High Voltage and High Current : v CEO “ - 50V (Min.), Iq = - 150mA (Max.)


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    PDF 2SA1015© 2SA1015 150mA 2SC1815© 961001EAA2' 2SA1015 2SC1815

    2SA1115

    Abstract: 2SA1115 E DTA124EK RT1P141C 2SA1175 2sa564 2SA1309A DTA124ES 2SA1015 2SA1018
    Text: - 28 - a S € Type No. « Manuf. = 2SA 1317 ' 2SA 1318 - ft 2SA 1319 „ m * SANYO TOSHIBA NEC iK/nruß 2SAU75 2SA1015 2SA953 tL HITACHI 2SA1032 ü it iM FUJITSU tö T MATSUSHITA = m MITSUBISHI 2SA1309A 2SA1115 □ — A ROHM 2SA933S 2SA933 2SA1309A 2SA965


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    PDF 2SAU75 2SA953 2SA1032 2SA1309A 2SA1018 2SA879 2SA1115 2SA933S 2SA933 2SA1115 2SA1115 E DTA124EK RT1P141C 2SA1175 2sa564 DTA124ES 2SA1015

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TO-92 1. TO-92 PACKAGE SERIES fsSTM ito |CJ i CD {DISCRETE/0PT0> 'N TO o > TRANSISTOR < Application NPN General Purpose 2SC1815 ! PNP i i 2SA1015 General Purpose 2SC2888 ! 2SA1158 V c e Sat MAX. hFE Type No. v CEO (V) •c PC (mA) (mW) 50 150 400


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    PDF 2SC1815 2SC2888 2SA1158 2SA1015 2SC1923 2SC380TM 2SC941TM 50vMAX

    2SA934

    Abstract: 2SA970 2sa1015 2SA953 2sa933 2sa952 2sB1064 2SA1782 2SA720 2SA836
    Text: tt € S> T y p e No. Manuf. « H $ SANYO M £ TOSHIBA B 11 NEC S ÍL HITACHI * ± a FU JITSU të T MATSUSHITA □ MITSUBISHI — A ROHM 2SA 671 — '' ÍL 2SB507 2SB596 2SA985 2SB856 2SB941 2SB1033 2 SA 672 B SL 2SA1782 2SA1015 2SA953 2SA836 2SA720 2SAS54


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    PDF 2SB507 2SB596 2SA985 2SB856 2SB941 2SB1033 2SA1782 2SA1015 2SA953 2SA836 2SA934 2SA970 2sa933 2sa952 2sB1064 2SA720 2SA836

    2SC1815 2SA1015

    Abstract: transistor 2sa1015
    Text: TOSHIBA 2SA1015 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS i <; a 1 n 1 <5 U nit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS .5.1 M AX. • High Voltage and High Current. : w V c e O — —50V (Min.), I q = - 150mA (Max.)


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    PDF 2SA1015 --50V 150mA 2SC1815. 961001EAA2' 2SC1815 2SA1015 transistor 2sa1015

    2SA101S

    Abstract: 2SA933LN 2SA970 2sa977 2SB927 2SA562TM 2SA914 2SA1783 2SA1232 Toshiba 2SB754
    Text: - m « Type No. a € Manuf. s -E SANYO TOSHIBA 2SA 1124 fé T 2SA 1125 . të T 2SA 1127- fé T 2SA1783 2SA1015 2SA 1128 K T 2SB698 2SA562TM 2SA 1129 a a 2SB919 2SB1018 2SA 1133 „ fâ T 2SA1208 S ÍL HITACHI # ± ¡I FUJITSU T MATSUSHITA 2SB921L 2SA933LN


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    PDF 2SA1208 2SA1320 2SA1482 2SA1360 2SA914 2SA1783 2SA101S 2SA933LN 2SB698 2SA562TM 2SA101S 2SA933LN 2SA970 2sa977 2SB927 2SA562TM 2SA914 2SA1232 Toshiba 2SB754

    2sc286

    Abstract: 2SC1815 2SA1015 2SC2754 2SA1015 2SA970 2SA1316 2SA1015 GR 2SA1164 2SC1815 2SC2240
    Text: Powered .TOSHIBA by TO-92 ÌSSTM \ 0 |0 iCO N ro ui o Electronic-Library > TRANSISTOR < V c e (Sat M AX. hFE 'C PC (V) (mA) (mW) (mA) General Purpose 2SC1815 ! 2SA1015 50 150 400 70~700/400 6 2 0.25/0.3 100 10 (80) 10 1 10 6 0.1 1K 10 General Purpose . i .


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    PDF 50vMAX 2SC1815 2SA1015 2SC2868 2SA1158 2SC1627 2SA817 2SC2754 2SA1164 2SC2878* 2sc286 2SC1815 2SA1015 2SA970 2SA1316 2SA1015 GR 2SC2240

    JE 1692

    Abstract: 2SB811 2SB1443 2SB1242 2SA1586 2SB1376 2SB1434 2SA1323 2SA1227 2SA1431
    Text: - 38 - S! tt « Typ e No. 2SA 1681 « Manuf. % H ft SANYO n s TOSHIBA N EC tL HITACHI s d r iS F UJ ITSU «5 T MAT S U S H I T A 2 SA 1304 2SB1096 2SB928 2SA 1685 - = & 2SA1586 2SA1613 2SB1218A 2SA 1686 □ — A 2SA1015 2SAU75 2SA 1687 h 2SA 1688 = ft 2SA 1689


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    PDF 2SB1229 2SB1410 2SA720A 2SA1606 2SA1304 2SB1096 2SB928 2SB1186 2SA1586 2SA1613 JE 1692 2SB811 2SB1443 2SB1242 2SB1376 2SB1434 2SA1323 2SA1227 2SA1431