3rn1010
Abstract: RN1010 RN1011 RN2010 RN2011
Text: RN1010, RN1011 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1010,RN1011 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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RN1010,
RN1011
RN1010
RN2010RN2011
SC-43
3rn1010
RN1011
RN2010
RN2011
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2SC1815
Abstract: 2SC1815L 2SA1015L-O 2SA1015LO 2SC1815 GR 2SA1015
Text: 2SC1815 L 東芝トランジスタ シリコンNPNエピタキシャル形 (PCT方式) 2SC1815(L) ○ 低周波電圧増幅用 ○ 励振段増幅用 • • • • • 単位: mm 高耐圧でしかも電流容量が大きい。 : VCEO = 50 V (最小), IC = 150 mA (最大)
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2SC1815
2SA1015
SC-43
2SC1815L
2SA1015L-O
2SA1015LO
2SC1815 GR
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2SA1300
Abstract: No abstract text available
Text: 2SA1300 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1300 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A)
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2SA1300
2SA1300
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2SA1296
Abstract: 2SC3266
Text: 2SA1296 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1296 ○ 低周波電力増幅用 ○ 電力スイッチング用 単位: mm • 2SC3266 とコンプリメンタリになります。 • 許容コレクタ損失が大きい。: PC = 750 mW (Ta = 25°C)
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2SA1296
2SC3266
SC-43
2SA1296
2SC3266
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RN1001
Abstract: RN1006 RN2001 RN2002 RN2003 RN2004 RN2005 RN2006
Text: RN2001~RN2006 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2001,RN2002,RN2003 RN2004,RN2005,RN2006 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z With built-in bias resistors z Simplify circuit design
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RN2001RN2006
RN2001
RN2002
RN2003
RN2004
RN2005
RN2006
RN1001
RN1006
RN2001
RN1006
RN2003
RN2006
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2SC982TM
Abstract: No abstract text available
Text: 2SC982TM 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (ダーリントン接続) 2SC982TM ○ プリンタードライブ, コアドライブ, LED ドライブ用 ○ 低周波増幅用 • 単位: mm 直流電流増幅率が高い。: hFE (1) = 5000 (最小) (IC = 10 mA)
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2SC982TM
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2SC982TM
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2SC3279
Abstract: No abstract text available
Text: 2SC3279 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 2SC3279 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm hFE が高く直線性が良好です。 : hFE (1) = 140~600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (最小), 200 (標準) (VCE = 1 V, IC = 2 A)
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2SC3279
SC-43
2SC3279
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2SC2120
Abstract: 2SA950
Text: 2SC2120 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 2SC2120 ○ 低周波電力増幅用 単位: mm • 直流電流増幅率が高い。: hFE (1) = 100~320 • B 型プッシュプルで 1 W の出力が得られます。
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2SC2120
2SA950
SC-43
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2SA950
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2SA1091
Abstract: 2SC2551 SC43
Text: 2SC2551 東芝トランジスタ シリコンNPN三重拡散形 PCT方式 2SC2551 ○ 高電圧制御用 ○ プラズマディスプレイ, ニクシー管駆動用 ○ ブラウン管輝度調整用 単位: mm • 高耐圧です。 : VCBO = 300 V, VCEO = 300 V
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2SC2551
2SA1091
2SA1091
2SC2551
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2SC3266
Abstract: 2SA1296
Text: 2SC3266 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3266 ○ 低周波電力増幅用 ○ 電力スイッチング用 単位: mm • 2SA1296 とコンプリメンタリになります。 • 許容コレクタ損失が大きい。: PC = 750 mW (Ta = 25°C)
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2SC3266
2SA1296
SC-43
2SC3266
2SA1296
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2SC1815
Abstract: 2SA1015L 2SA1015
Text: 2SA1015 L TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Low Noise Amplifier Applications • Unit: mm High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max) • Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = −6 V, IC = −150 mA
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2SA1015
2SC1815
2SC1815
2SA1015L
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2SC752
Abstract: 2sc752 equivalent 2SC752G-TM 2sC752 transistor
Text: 2SC752 G TM TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC752(G)TM Ultra High Speed Switching Applications Computer, Counter Applications • High transition frequency: fT = 400 MHz (typ.) · Low saturation voltage: VCE (sat) = 0.3 V (max)
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2SC752
2sc752 equivalent
2SC752G-TM
2sC752 transistor
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RN2007
Abstract: RN2009 RN1007 RN1009 RN2008
Text: RN2007~RN2009 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2007,RN2008,RN2009 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process
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RN2007
RN2009
RN2008
RN1007
RN1009
RN2007
RN2008
RN2009
RN1009
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Untitled
Abstract: No abstract text available
Text: 2SA950 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA950 Audio Power Amplifier Applications • High hFE: hFE = 100~320 • 1 W output applications • Complementary to 2SC2120 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating
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2SA950
2SC2120
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2SA1300
Abstract: No abstract text available
Text: TOSHIBA 2SA1300 2 S A 1 300 TOSHIBA TRANSISTOR STROBO FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm M EDIUM PO W ER AM PLIFIER APPLICATIONS • High DC Current Gain and Excellent hEE Linearity : hFE (1) = 140-600 (Vqe = - IV, Iq = -0.5A)
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2SA1300
961001EAA2'
2SA1300
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SC3329 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 1çC 337Q Unit in mm FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS AND RECOMMENDED FOR THE FIRST STAGES OF MC HEAD AMPLIFIERS 5.1 M AX. • Very Low Noise in the Region of Low Signal Source Impedance
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2SC3329
2SA1316
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SC1815 2SC1815 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. DRIVER STAGE AM PLIFIER APPLICATIONS. • High Voltage and High Current : V0 EO = 50V (Min.), 10 = 150mA (Max.)
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2SC1815
150mA
2SA1015
961001EAA2'
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Untitled
Abstract: No abstract text available
Text: 2SA1300 T O SH IB A 2 S A 1 300 TO S H IB A TRANSISTOR STROBO FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm M E D IU M POWER AMPLIFIER APPLICATIONS • High DC Current Gain and Excellent hEE Linearity :h F E (l) = 14O~6OO(V0E= - I V , I q = —0.5A)
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2SA1300
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Untitled
Abstract: No abstract text available
Text: 2SC2551 TO SHIBA 2SC2551 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS HIGHT VOLTAGE CONTROL APPLICATIONS PLASM A DISPLAY, NIXIE TUBE DRIVER APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS . 5.1 M AX.
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2SC2551
2SA1091.
SC-43
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC1959 2SC1959 TO SHIBA TRANSISTOR SILOCON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm A U D IO FREQUENCY LO W POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS SW ITCHING APPLICATIONS • . 5.1 M A X . Excellent hpg Linearity : hpE (2) = 25 (Min.) : V çe = 6V, Iç = 400mA
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2SC1959
400mA
2SA562TM.
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Untitled
Abstract: No abstract text available
Text: 2SC3112 TO SHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S C3 1 1 2 Unit in mm FOR AUDIO AM PLIFIER AND SWITCHING APPLICATIONS • • • High DC Current Gain High Breakdown Voltage High Collector Current 5.1 M AX. hpE = 600~3600 VCEO = 50V
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2SC3112
150mA
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN2001-RN2006 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2001, RN2002, RN2003 RN2004, RN2005, RN2006 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS Unit in mm . 5.1 MAX. • With Built-in Bias Resistors
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RN2001-RN2006
RN2001,
RN2002,
RN2003
RN2004,
RN2005,
RN2006
RN1001
RN1006
RN2001
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2SA950
Abstract: 2SC2120
Text: TOSHIBA 2SA950 2SA950 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO PO W ER AM PLIFIER APPLICATIONS • • • . 5.1 M AX. High hpE : hRE = 100~320 IW Output Applications Complementary to 2SC2120 0.45 0.55 M A X. 0.45 M A X IM U M RATINGS (Ta = 25°C)
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2SA950
2SC2120
SC-43
2SA950
2SC2120
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN1001 ~RN1006 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1001, RN1002, RN1003 RN1004, RN1005, RN1006 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS Unit in mm . 5.1 MAX. • With Built-in Bias Resistors
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RN1001
RN1006
RN1001,
RN1002,
RN1003
RN1004,
RN1005,
RN2001
RN2006
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