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    2N6496 Price and Stock

    Microchip Technology Inc 2N6496

    POWER BJT
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    2N6496 Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N6496 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N6496 API Electronics 15 AMPS / 20 AMPS NPN Transistors Scan PDF
    2N6496 API Electronics Short form transistor data Short Form PDF
    2N6496 API Electronics Short form transistor data Short Form PDF
    2N6496 Crimson Semiconductor MULTIEPITAXIAL Transistors Scan PDF
    2N6496 General Electric High current, high power, high speed silicon N-P-N planar transistor. - Pol=NPN / Pkg=TO3 / Vceo=130 / Ic=15 / Hfe=12-100 / fT(Hz)=60M / Pwr(W)=80 Scan PDF
    2N6496 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N6496 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6496 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N6496 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6496 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6496 Unknown Transistor Replacements Scan PDF
    2N6496 Unknown Transistor Replacements Scan PDF
    2N6496 Unknown Transistor Replacements Scan PDF
    2N6496 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6496 Unknown Shortform Electronic Component Datasheets Short Form PDF
    2N6496 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N6496 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6496 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6496 PPC Products Transistor Short Form Data Scan PDF

    2N6496 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6496

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2N6496 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High collector current rating ·High power dissipation capability ·Wide area of safe operation APPLICATIONS ·For switching and amplifier circuits in


    Original     		PDF 2N6496 2N6496

    Untitled

    Abstract: No abstract text available
    Text: 2N6496 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)110 V(BR)CBO (V)150 I(C) Max. (A)15 Absolute Max. Power Diss. (W)80# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)20m¶ @V(CBO) (V) (Test Condition)130 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)8.0


    Original     		PDF 2N6496 Freq60M time500n

    2N6496

    Abstract: T257
    Text: SEME 2N6496–T257 LAB MECHANICAL DATA Dimensions in mm inches 4.83 (0.190) 5.08 (0.200) 0.89 (0.035) 1.14 (0.045) 3.56 (0.140) Dia. 3.81 (0.150) 10.41 (0.410) 10.92 (0.430) 13.38 (0.527) 13.64 (0.537) 16.38 (0.645) 16.89 (0.665) 10.41 (0.410) 10.67 (0.420)


    Original     		PDF 2N6496 350ms, T257

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    Untitled

    Abstract: No abstract text available
    Text: 0043592 A P I ELECTRONICS INC A P I 26C 00234 ELECTRONICS INC 2b D » F | d D4 3 S c12 D 00 0 2 3 4 b COLLECTOR CURRENT = 15 AMPS NPN TYPES - CONTINUED Device No C ase 2N6496 2N6579 2N6580 2N6581 2N6582 2N6583 2N6584 2N6585 TO-3 T O -3 TO-3 TO-3 TO-3 TO-3


    OCR Scan     		PDF 2N6496 2N6579 2N6580 2N6581 2N6582 2N6583 2N6584 2N6585 O61/1

    U3540

    Abstract: 2n5039
    Text: 2N5038, 2N5039, 2N6496 HARRIS SEMICOND SECTOR File Number SbE ]> • 698 43G2271 GD4044fl STI H H A S High-Current, High-Power High-Speed Silicon N-P-N Planar Transistors lz z 32'-‘/3 Devices for Switching and Amplifier Circuits in Industrial and Commercial Applications


    OCR Scan     		PDF 2N5038, 2N5039, 2N6496 43G2271 GD4044fl 2NS038, 2NS039 2N6496 22377R' U3540 2n5039

    BUW23

    Abstract: No abstract text available
    Text: M U L T IE P IT A X IA L P LAN A R - TO -3 c o n tin u e d NPN BUX41 , BUX41N BUX42 2N5038 2N5039 2N5671 2N5672 2N6032 2N6033 2N6354 2N6496 ' to« Vcio (V) Veto (V) lc (*) P» (W) 250 220 300 150 120 120 150 120 150 150 150 200 160 250 90 75 90 120 90 120


    OCR Scan     		PDF BUX41 BUX41N BUX42 2N5038 2N5039 2N5671 2N5672 2N6032 2N6033 2N6354 BUW23

    Untitled

    Abstract: No abstract text available
    Text: mI m J E L E C T R O N IC S , INC. |-17 COLLECTOR CURRENT = 15 AMPS NPN TYPES VCEO sus Volts v CBO Volts 2N3055 JA N 2N3055 JT X 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882 2N6253 2N6254 2N6470 2N6471 2N6472 2N6496 TO -3 TO -3 100


    OCR Scan     		PDF 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412

    2N3055

    Abstract: 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882
    Text: mI m J E L E C T R O N IC S , INC. |-17 COLLECTOR CURRENT = 15 AMPS NPN TYPES VCEO sus Volts v CBO Volts 2N3055 JA N 2N3055 JT X 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882 2N6253 2N6254 2N6470 2N6471 2N6472 2N6496 TO -3 TO -3 100


    OCR Scan     		PDF 2N3055 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882

    Untitled

    Abstract: No abstract text available
    Text: m 2N6496 \ \ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N6496 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE T O - 3 k. I MAX. I MAXIMUM RATINGS 15 A lc V 110 V ce 140 W @ T C = 25 °C P diss -65 °C to +200 °C Tj


    OCR Scan     		PDF 2N6496 2N6496

    Untitled

    Abstract: No abstract text available
    Text: m 7351537 005^313 6 • SCS-THOMSON S 6 S-THOMSON 2N5038/39 2N6496 3DE D HIGH CURRENT POWER SWITCH DESCRIPTION The 2N5038, 2N5039 and 2N6496 are silicon nar multiepitaxial NPN transistors in Jedec 1 metal case. They are especially intended for high current


    OCR Scan     		PDF 2N5038/39 2N6496 2N5038, 2N5039 2N6496 2N5038-2N5039-2N6496

    Jan2N3055

    Abstract: No abstract text available
    Text: Ú j i l ELECTRO N ICS, IN C . COLLECTOR CURRENT = VCEO sus Volts Device No Cáse VCBO Volts Ve BO Volts 2N3055 JAN 2N3055 JTX 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882 2N6253 2N6254 2N6470 2N6471 2N6472 2N6496 TO-3 TO-3 100 100


    OCR Scan     		PDF 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 Jan2N3055

    AP1003

    Abstract: 2N6587 2N6588 2N6496 2N6579 2N6580 2N6581 2N6582 2N6583 2N6584
    Text: 0043592 A P I ELECTRONICS A P I INC 26C 00234 EL ECTRON ICS INC 2b D ]> F | DO435^5 □□□□53M h JT C O L L E C T O R C U R R E N T = 1 5 AM PS N PN T Y PE S - CONTINUED D ev ice No 2N6496 2N6579 2N6580 2N6581 2N6582 2N6583 2N6584 2N6585 2N6586 2N6587


    OCR Scan     		PDF 2N6496 2N6579 2N6580 2N6581 2N6582 2N6583 2N6584 2N6585 2N6586 2N6587 AP1003 2N6588

    RCA-2N5038

    Abstract: 2N5038 equivalent 2N6496 2N6496 RCA 2N5039-1 AALI 2N5038 2N5039 2n5038 sol
    Text: 3875081 G E SOLID S T A T E ^ ^ | 3ö7SDai 0017117 3 ^r . S 3 ^ /3 High-Speed Power 2N5038, 2N5039, 2N6496 File Number 698 High-Current, High-Power High-Speed Silicon N-P-N Planar Transistors


    OCR Scan     		PDF STATE111 2N5038, 2N5039, 2N6496 RCA-2N5038 2N5039 2N3678 2CS-22377R' 2N5038 equivalent 2N6496 RCA 2N5039-1 AALI 2N5038 2n5038 sol

    2n5038

    Abstract: FO152
    Text: 3875081 G E SOLID STATE ^ ^ 1 3875081 0017117 3 I"> T - i W Ï High-Speed Power 2N5038, 2N5039, 2N6496 File Number 698 High-Current, High-Power High-Speed Silicon N-P-N Planar Transistors


    OCR Scan     		PDF 2N5038, 2N5039, 2N6496 2N6496 2n5038 FO152

    2N6496

    Abstract: No abstract text available
    Text: 2N6496 SILICO N NPN PO W ER T R A N SIST O R DESCRIPTION; The 2N6496 is Designed for General Purpose Amplifier and Switching Applications. PA C K A G E STYLE TO- 3 MAXIMUM RATINGS Ie 15 A V ce 110 V P d is s 140 W @ Te " 25 0C Tj -65 0C to +200 0C Ts tg -65 0C to +200 0C


    OCR Scan     		PDF 2N6496

    Untitled

    Abstract: No abstract text available
    Text: Ìl S U ELECTR O NICS, IN C . 17 COLLECTOR CURRENT = 15 AMPS NPN TYPES v CBO VCEO sus Volts Volts Device No Case 2N3055 JAN 2N3055 JT X 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882 2N6253 2N6254 2N6470 2N6471 2N6472 2N6496 T O -3


    OCR Scan     		PDF 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412

    Untitled

    Abstract: No abstract text available
    Text: CRIMSON SEMICONDUCTOR INC ^ DE | 2514011, 0000336 t 2514096 C R IMSON SEMIC O N D U C T O R INC 00338 MULTIEPITAXIAL PLANAR - TO-3 continued Vcm Vein (V) (V) NPN BUX41 B U X41N B U X4 2 2N5038 2N5039 2N5671 2N5672 2N6032 2N6033 2N6354 2N6496 * ton 250 220


    OCR Scan     		PDF BUX41 2N5038 2N5039 2N5671 2N5672 2N6032 2N6033 2N6354 2N6496

    TIC 2260

    Abstract: si5464 RF Transistor 2n5038
    Text: 2N5038, 2N5039, 2N6496 File N um ber 698 High-Current, High-Power High-Speed Silicon N-P-N Planar Transistors D evices for S w itchin g and A m p lifie r C ircuits in Industrial and C o m m ercial A p p licatio n s Features: • ■ ■ ■ M axim um operating area curves for dc and pulse operation


    OCR Scan     		PDF 2N5038, 2N5039, 2N6496 TIC 2260 si5464 RF Transistor 2n5038

    AP1012

    Abstract: AP1013 AP1005 2N6030 2N6583 2N6496 2N6579 2N6580 2N6581 2N6582
    Text: 0043592 A P I A P I ELECTRONICS ELECTRONICS INC 26C 2b INC 00234 D ]> F | DO435^5 □□□□53M h JT C O L L E C T O R C U R R E N T = 1 5 AM PS N PN T Y PE S - CONTINUED D ev ice No 2N6496 2N6579 2N6580 2N6581 2N6582 2N6583 2N6584 2N6585 2N6586 2N6587 2N6588


    OCR Scan     		PDF 2N6496 2N6579 2N6580 2N6581 2N6582 2N6583 2N6584 2N6585 2N6586 2N5629 AP1012 AP1013 AP1005 2N6030

    Untitled

    Abstract: No abstract text available
    Text: I SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeNo 2N6423 2N6424 2N6425 2N6425A 2N6436 2N6437 2N6438 2N6448 2N6461 2N6462 2N6463 2N6464 2N6465 2N6466 2N6467 2N6468 2N6469 2N6496 2N6500 2N6511 2N6512 2N6513 2N6514 2N6534 2N6535 2N6536 2N6537 2N6542


    OCR Scan     		PDF 2N6423 2N6424 2N6425 2N6425A 2N6436 2N6437 2N6438 2N6448 2N6461 2N6462

    2n3053A complementary

    Abstract: 40362 2N4036 BUX40A 40319 2n4314 2N1893 2N2102 2N2270 2N3053
    Text: THOflSON/ D IS T R IB U T O R SÔE D • =102^073 000572b OflO ■ TCSK Bipolar Power Transistors High-Speed Switching h p E at V c e “ 10V V c E » a t 'V C u rren t - mA T yp e No. v CEO<su9> V vc er (* u ) Pt w V 7W max 2N2102 FA M ILY (n-p-n) 2N697


    OCR Scan     		PDF a00S72b 2N2102 2N4036 120MHz 2N697 2N1613 2N3053 2N2270 T0205AD/ 2N3053A 2n3053A complementary 40362 BUX40A 40319 2n4314 2N1893

    buw24

    Abstract: BUW32 BUW35 BU326S buw23 BUX41N 2N5038 2N5039 2N5671 2N6032
    Text: CRIMSON SEMICONDUCTOR INC • DE | aSlMOIt □0DD33fi t 2514096 CRIMSON SEMICONDUCTOR INC ' 99D M U LTIEP IT A XIA L P L A N A R - TO-3 continued Vc*o (V) V«n (V) BU X41 2S0 200 15 120 1.6 8/1 08 BUX41N 220 160 18 120 1.6 1 2/ 1 .5 0 .8 NPN *c (A) Pm <W)


    OCR Scan     		PDF 2S1401L 0DD33fi BUX41 BUX41N BUX42 2N5038 2N5039 2N5671 2NS672 2N6032 buw24 BUW32 BUW35 BU326S buw23

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE le MAX V c e o (SUS) = = TO-3 2-50A 35-500V NPN Power Transistors PNP VCEO (WS) 1C (max) M (A) hFE@ic/Vc* (min-max @ A/V) 40 55 40 55 6 6 6 6 15-45 0 1.5/4 15*4501.5/4 25-75 0 1.5/4 25-75 @1.5/4 40 60 140 60 80 5 15 10


    OCR Scan     		PDF 5-500V 2N3773 2N3788 2N3902 2N4070 2N4071 2N4347 2N4348 2N4913 2N1487