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    2N6297 Price and Stock

    Microchip Technology Inc 2N6297

    PNP TRANSISTOR
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    Central Semiconductor Corp 2N6297

    Trans Darlington PNP 80V 4A 2-Pin TO-66 Bag - Rail/Tube (Alt: 2N6297)
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    2N6297 11
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    Central Semiconductor Corp 2N6297 PBFREE

    Transistor Darlington PNP 80V 4A 3-Pin TO-220AB Sleeve (Alt: 2N6297 PBFREE)
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    Central Semiconductor Corp 2N6297 TIN LEAD

    Transistor Darlington PNP 80V 4A 3-Pin TO-66 (Alt: 2N6297 TIN/LEAD)
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    Central Semiconductor Corp 2N6297 TIN/LEAD

    Bipolar Transistors - BJT PNP 80Vcbo 80Vceo 5.0Vebo 5.0A 50W
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    Find more 2N6297 price and stock on Findchips.com

    2N6297 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N6297 Central Semiconductor Power Transistors Original PDF
    2N6297 Semelab Bipolar PNP Device in a Hermetically Sealed TO66 Metal Package - Pol=PNP / Pkg=TO66 / Vceo=80 / Ic=4 / Hfe=750-18k / fT(Hz)=4M / Pwr(W)=50 Original PDF
    2N6297 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N6297 Motorola European Master Selection Guide 1986 Scan PDF
    2N6297 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N6297 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6297 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N6297 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6297 Unknown Transistor Replacements Scan PDF
    2N6297 Unknown Transistor Replacements Scan PDF
    2N6297 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6297 Unknown Silicon PNP-darlington-tranistor+diode Scan PDF
    2N6297 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6297 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N6297 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6297 New England Semiconductor TRANS DARLINGTON PNP 80V 4A 2TO-66 - Pol=PNP / Pkg=TO66 / Vceo=80 / Ic=4 / Hfe=750-18k / fT(Hz)=4M / Pwr(W)=50 Scan PDF
    2N6297 New England Semiconductor Darlington Complementary Silicon Power Transistor Scan PDF

    2N6297 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6296

    Abstract: 2N6297 2N6298
    Text: SavantIC Semiconductor Product Specification 2N6296 2N6297 Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·DARLINGTON ·Complement to type 2N6294/6295 APPLICATIONS ·For high gain amplifier and medium speed switching applications PINNING See Fig.2


    Original     		PDF 2N6296 2N6297 2N6294/6295 2N6296 2N6298 2N6297 2N6298

    Untitled

    Abstract: No abstract text available
    Text: 2N6297 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a


    Original     		PDF 2N6297 O213AA) 30-Jul-02

    2N6296

    Abstract: 2N6297 2N6294 2N6298
    Text: Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6296 2N6297 DESCRIPTION ・With TO-66 package ・DARLINGTON ・Complement to type 2N6294/6295 APPLICATIONS ・For high gain amplifier and medium speed switching applications PINNING See Fig.2


    Original     		PDF 2N6296 2N6297 2N6294/6295 2N6296 2N6298 2N6297 2N6294 2N6298

    2N6297

    Abstract: No abstract text available
    Text: 2N6297 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a


    Original     		PDF 2N6297 O213AA) 1-Aug-02 2N6297

    Darlington 40A

    Abstract: 2N6297 2N6294
    Text: 2N6294 2N6295 2N6296 2N6297 NPN PNP w w w. c e n t r a l s e m i . c o m COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6294, 2N6296 series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base


    Original     		PDF 2N6294 2N6295 2N6296 2N6297 2N6294, 2N6297 Darlington 40A

    Untitled

    Abstract: No abstract text available
    Text: 2N6294 2N6295 2N6296 2N6297 NPN PNP COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6294, 2N6296 series devices are complementary silicon Darlington power transistors, manufactured by the epitaxial base


    Original     		PDF 2N6294 2N6295 2N6296 2N6297 2N6294, 2N6296 100kHz

    2N6297

    Abstract: 2N6296 2N6298
    Text: Product Specification www.jmnic.com 2N6296 2N6297 Silicon PNP Power Transistors DESCRIPTION ・With TO-66 package ・DARLINGTON ・Complement to type 2N6294/6295 APPLICATIONS ・For high gain amplifier and medium speed switching applications PINNING See Fig.2


    Original     		PDF 2N6296 2N6297 2N6294/6295 2N6296 2N6298 2N6297 2N6298

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    BD149

    Abstract: 2N6297 Motorola LM3661TL-1.40 2SD526-0 2SB5960 Motorola 2N6297 MJE2481 MJE2483 2SD5260 idb596
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V PD (BR)CEO Max hFE »T Of) ON) Mln (Hz) ICBO t0N r Max Max (A) (8) Max (Ohms) (CE)sat Tp.r Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . -5 -10 . -15 .20 . .25


    Original     		PDF MJE800T 2N6296 MJE2481 MJE2483 2N3054A 2SD1092 2SD777 2SB604 2SD570 BD149 2N6297 Motorola LM3661TL-1.40 2SD526-0 2SB5960 Motorola 2N6297 2SD5260 idb596

    2N3738 equivalent

    Abstract: 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420
    Text: Power Transistors TO-66 Case TYPE NO. NPN 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 PNP 2N6049 2N6420 2N6421 2N6422 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N3767 2N4231 2N4231A 2N4232 2N4232A 2N4233 2N4233A 2N4240 2N4296 2N4298 2N4299 2N4910 2N4911 2N4912


    Original     		PDF 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420 2N6421 2N3738 equivalent 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420

    LM1011N

    Abstract: JRC386D X0238CE UA78GKC M51725L MJ13005 AN6677 HA11749 MN8303 sn76131n
    Text: TCG/NTE/ECG To JEDEC and Japanese ECG/TCG/NTE ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 ECG20 ECG21 ECG22 ECG23 ECG24 ECG25 ECG26 ECG27 ECG28 ECG29 ECG30 ECG31 ECG32 ECG33 ECG34 ECG35 ECG36 ECG37 ECG38 ECG39 ECG40 ECG41 ECG42 ECG43 ECG44


    Original     		PDF ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 LM1011N JRC386D X0238CE UA78GKC M51725L MJ13005 AN6677 HA11749 MN8303 sn76131n

    2N6294

    Abstract: 2N6297 2N6295 2N6296 ic1.5a
    Text: Datasheet 2N6294 2N6295 NPN 2N6296 2N6297 PNP C OM P LE ME NT AR Y SILICON DARLI NG T O N POWER TR AN SISTORS 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-66 CASE Manufacturers of World Class Discrete Semiconductors


    OCR Scan     		PDF 2N6294 2N6295 2N6296 2N6297 T0-66 2N629b 2N6295 2N6296 2N6297 ic1.5a

    semelab 2N6287

    Abstract: 2N6378E
    Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No 2N6270 2N6271 2N6274 2N6274A 2N6275 2N6275A 2N6276 2N6276A 2N6277 2N6277A 2N6278 2N6279 2N6280 2N6281 2N6282 2N6283 2N6284 2N6285 2N6286 2N6287 2N6294 2N6295 2N6296 2N6297 2N6298 2N6299 2N6300


    OCR Scan     		PDF 2N6270 2N6271 2N6274 2N6274A 2N6275 2N6275A 2N6276 2N6276A 2N6277 2N6277A semelab 2N6287 2N6378E

    2N6297

    Abstract: 2N6295 2N6294 2N5295 2N6296
    Text: NPN PNP 2N6294 2N6296 2N6295 2N6297 DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS .designed for general-purpose am plifier, low-frequency sw itching and hammer driver applications. • H igh DC C urrent Gain hFE = 3000 Typ @ Ic = 2.0 Adc • L ow C ollector-Em itter Saturation V oltage -


    OCR Scan     		PDF 2N6294 2N6296 2N6295 2N6297 2N6294, 2N6296 2N6295, 2N6297 2N5295

    FT152

    Abstract: 2N6297 Motorola
    Text: MOTORCLA SC XSTRS/R F 15E D I b3b?2S4 OOflMbSa T | 7 "-3 3 -¿ 9 7^33-3/ NPN MOTOROLA 2N6294, 2N629S SEMICONDUCTOR TECHNICAL DATA PNP 2N6296, 2N6297 DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed fo r general-purpose amplifier, low-frequency switching


    OCR Scan     		PDF 2N6294, 2N629S 2N6296, 2N6297 2N6296 FT152 2N6297 Motorola

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan     		PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

    2NXXXX

    Abstract: SILICON TRANSISTOR CORP 2N6357 transistor 2N6274 2N6192 2N6193 2N6211 2N6212 2nxxx 2N6214
    Text: □ D □ a î ru ru □ Q: îC\ o o o o o CO CO co o o CM CO » E E o o o o o co co co co co o o o o o co lo io' lo r-* o o o o o r-’ n .* r-^ o o co CO co co co co co o o o d o o o o lo lo CO CO co CM CM LO LO LO o LO CM CM 1- O O O O O T- 1- CMCMCM Z Z Q -Z Z


    OCR Scan     		PDF 2N6192 2N6193 2N6211 2N6212 2N6213 2N6214 2N6215 2N6216 2N6217 2N6226 2NXXXX SILICON TRANSISTOR CORP 2N6357 transistor 2N6274 2nxxx

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


    OCR Scan     		PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    Untitled

    Abstract: No abstract text available
    Text: o H DA RLIN GTON O flffcil « M t l t t O T O N M W PACKAGE ec TO-33 < û F-24 TO-21 3/TO-66 TO-204/TO-3 PACKAGE TO-21 3/TO-66 k V O LT S 2N635Q" 2M6351“ *C @ *6 A A 1.0/5.0 1.5 5.0/0.005 1000 1.0/5.0 1.5 5.0/0.01 *C @ V C E A V ^ C E s a t m ax V O LT S


    OCR Scan     		PDF 2N635Q" 2M6351" 2N6352" 2N6353" 3/TO-66 2N6300" 2N6301" O-204/TO-3 2N6383* 2N6384M

    TO-213

    Abstract: 2N6297 WF24 2N6351
    Text: A POW ERHOUSE BIPOLAR TO-33 w b v CEO VOLTS PEAK >C AMPS hFE min/max < < o m D E /ICE TYPE PACKAGE o N PN D A R L IN G T O N POW ER T R A N S IS T O R S VCE sat max VOLTS •c @ !b A A 2N6350* 80 5.0 2000 1.0/5.0 1.5 5.0/0.005 2N6351* 150 5.0 1000 1.0/5.0


    OCR Scan     		PDF 2N6350* 2N6351* O-213/ 2N6352* 2N6353* 2N6300* 2N6301* O-204/TO-3 2N6383* 2N6384* TO-213 2N6297 WF24 2N6351

    1040B

    Abstract: 2N3910 svt6062 2n5100
    Text: =1 TYPE 1015 NPN 1 GEOMETRY PHYSICAL CHARACTERISTICS 1. 2. 3. 4. Chip size. Chip hickness. Top metal. Back metal. 5. Backside. 6. Bonding pad. 2020 PNP 1. 2. 3. 4. Chip size. Chip thickness. Top metal.


    OCR Scan     		PDF 1020B 15X19 3kA/10kA/I0kA 3kA/10kA/10kA 2N6674 2N6675 2N6676 2N6677 1040B 2N3910 svt6062 2n5100

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


    OCR Scan     		PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    SILICON TRANSISTOR CORP

    Abstract: 2NXXXX TO53 package 2nxxx transistor 2N6274 2N6353 TRANSISTOR TO63 2N6193 2N6211 2N6213
    Text: tr r- IV □ D □ îC\ o o o o o IO r r CO CO CD CO o o o o o CO CO co o o CM CO » E E o o o o o co co co co co o o o o o co lo io' lo r-* o o o o o r-’ n .* r-^ o o co CO co co co co co o o o d o o o o lo lo CO CO co CM CM LO LO LO o LO CM CM 1- O O O O O


    OCR Scan     		PDF 2N6192 2N6193 2N6211 2N6212 2N6213 2N6214 2N6215 2N6216 2N6217 2N6226 SILICON TRANSISTOR CORP 2NXXXX TO53 package 2nxxx transistor 2N6274 2N6353 TRANSISTOR TO63