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    2N3151 Search Results

    2N3151 Datasheets (22)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N3151 API Electronics Short form transistor data Scan PDF
    2N3151 Diode Transistor NPN Transistor Selection Guide Scan PDF
    2N3151 Diode Transistor Transistor Short Form Data Scan PDF
    2N3151 General Diode Transistor Selection Guide Scan PDF
    2N3151 General Transistor NPN Power Transistors Scan PDF
    2N3151 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3151 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N3151 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N3151 Unknown Shortform Transistor PDF Datasheet Scan PDF
    2N3151 Unknown GE Transistor Specifications Scan PDF
    2N3151 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N3151 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
    2N3151 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
    2N3151 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N3151 Unknown Vintage Transistor Datasheets Scan PDF
    2N3151 New England Semiconductor NPN TO-53 / TO-114 Transistor Scan PDF
    2N3151 New England Semiconductor NPN Transistors, TO-63 / TO-114 Scan PDF
    2N3151 Pirgo Electronics Low Frequency Silicon Power Transistor Scan PDF
    2N3151 Semitronics Silicon Power Transistors Scan PDF
    2N3151 Silicon Transistor JAN / Consumer / Military / Industrial / Automotive / Hi-Rel Scan PDF

    2N3151 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N2819

    Abstract: 2N3149 2N3150 2N3151 2N5575 2N5587 2N5588 AP1066 AP1068 AP1110
    Text: 0043592 A P I A P I ELECTRONICS ELECTRONICS INC 26C INC Ëb d ÊT| 00240 00435^2 0 *T=‘ 3 3 - .Û I □□□□E4D 1 COLLECTOR CURRENT = 7 0 AMPS N PN TYPES D ev ice No C ase 2N3149 TO114 TO114 TO114 TO114 TO 114 TO114 2N3150 2N3151 A P1068 A P1110 AP1123


    OCR Scan     		PDF 2N3149 2N3150 2N3151 AP1068 AP1110 AP1123 2N5250 2N5251 AP1067 AP1091 2N2819 2N5575 2N5587 2N5588 AP1066

    AP1110

    Abstract: 2N4866 AP1123 2N2819 2N3149 2N3150 2N3151 2N5575 2N5587 2N5588
    Text: 0043592 A P I A P I ELECTRONICS INC _26C 00240 ELEC T RO N IC S INC 2b D-7Î.33.ÛI D E :| Q Q 4 3 S C1S 0000240 1 f COLLECTOR CURRENT = 7 0 AMPS NPN TYPES Device No 2N3149 2N3150 2N3151 AP1068 AP1110 AP1123 Case TO114 TO114 TO114 TO114 TO114 TO 114


    OCR Scan     		PDF D043ST2 2N3149 2N3150 2N3151 AP1068 AP1110 AP1123 2N4866 2N5250 2N5251 2N2819 2N5575 2N5587 2N5588

    ap1110

    Abstract: TO114 2N5251 AP1123 2N2819 2N3150 2N4866 2N3149 2N3151 2N5575
    Text: 0043592 A P I A P I ELECTRONICS ELECTRONICS INC 2 6C I NC Ëb d ÊT| 00240 0 0 4 3 5 ^2 0 *T=‘ 3 3 - . Û I □□□□E4D 1 COLLECTOR CURRENT = 7 0 AMPS N PN TYPES D ev ice No C ase 2N3149 TO114 TO114 TO114 TO114 TO 114 TO114 2N3150 2N3151 A P1068 A P1110


    OCR Scan     		PDF 2N3149 2N3150 2N3151 AP1068 AP1110 AP1123 2N5250 2N5251 AP1067 AP1091 TO114 2N2819 2N4866 2N5575

    2N1479

    Abstract: 2N1480 2N1481 2N1482 2N1700 2N5781 2N5782 2N5784 2N5785 2N5786
    Text: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863


    OCR Scan     		PDF O-39/TO-5 D00D1SS 515TQft 2N1479 2N1480 2N1481 2N1482 2N1700 2N5784 2N5785 2N5781 2N5782 2N5786

    2N558B

    Abstract: 2N3S49 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3848 2N4002
    Text: General Transistor Corporation CASE TO-63 le max = 20 to 60A V c e o (su s) NPN Power Transistors Typ*No. VCEO (•!*) <v) IC (mu) (A) hFE&C/VCE (min-mi* Q AY) VCE(SAT) QIC/IB (V0A/A) VBE ic/vce (V©A/V) VBE (SAT) ©OB (V0A/V) 2N1936 2N1937 2N3265


    OCR Scan     		PDF 0-300V 2N1936 2N1937 2N3265 2N3266 2N5250 2N5251 2N5489 2N5587 2N558B 2N558B 2N3S49 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3848 2N4002

    2N5251

    Abstract: 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3849 2N4002 TO114
    Text: NEU ENGLAND SEMICON DUC TOR bSbM'îSB 0 0 0 0 0 5 7 5RE T> 14 3 • Ic max = 2 0 to 6 0 A V ceo(sus) = 4 0 to 3 0 0 V fi = 0 .6 to 3 0 MHz IMPN TO-B3 Case 807 ' tc (MAX) (A) hFE @ IC/VCE (min-max @ A/V) 2N1936 2N1937 2N3265 2N3266 60 80 90 60 20 20 20 20


    OCR Scan     		PDF 000g05 2N1936 2N1937 2N3265 2N3266 1o05w1o 2n5250 2n5251 2n5489 2n5587 2N5251 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3849 2N4002 TO114

    2N3017

    Abstract: No abstract text available
    Text: SILICON NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Type 2N2812 2N2813 2N2814 2N2815 2N2816 2N2817 2N2818 2N2819 2N2821 2N2822 2N2823 2N2824 2N2825 2N2858 2N2859 2N2877 2N2878 2N2879 2N2880 2N2881 2N2882 2N2892 2N2893 2N2911 2N2983 2N2984


    OCR Scan     		PDF 2N2812 2N2813 2N2814 2N2815 2N2816 2N2817 2N2818 2N2819 2N2821 2N2822 2N3017

    2n2301

    Abstract: 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815
    Text: . GENERAL DIODE CORP d T J 3 f l b T 72 0 Sb GD OOB D 4 ö | 7 - - 2-*? ~ D SILICON P L A N A R TRANSISTO RS — S M A L L SIG N A L VI TYPE 2N72» 2N727 2N8E9 2N869A 2N92S 300 •300 360 360 300 2N929A 2N930 2N930A 2N1S72 2N1573 NPN NPN NPN NPN NPN • 2N1S74


    OCR Scan     		PDF 2N727 2N869A 2N929A 2N930' 2N930A 2N1572 2N1S73 2N1574 2N24S3 2N2484 2n2301 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


    OCR Scan     		PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    4233A

    Abstract: 535x 184 324 DIODE 2N5383 2N3055C
    Text: Contran ÄTTM,© STAND ARD PART LIST [continued] Devices. Inc STANDARD DIODE CHIP SELECTIONS PART No. Vr MIN. VO LTS Vp@ M AX. VO LTS If A M PS. trr N SE C . PA G E No. 5 31X C 003 531X C 004 532X C 001 532X C 002 532X C 003 100 400 50 80 100 1.3 1.8


    OCR Scan     		PDF 533XCD01 534XCD02 535XCQ01 2N1063 2N107Û 4233A 535x 184 324 DIODE 2N5383 2N3055C

    Transistors 2n551

    Abstract: Heat Sink to-39 2N1904 2N5068 2N2995 2N3916 2N3599 2N2951 2N3142 2N3444
    Text: INTEX/ SEflITRÔNICS CORP j e m i E T o 27E D • MôblEHb GD0D2Ö? S discrete devices SEMICONDUCTORS n Sem itronics Corp. 7 ^ - * 2 .7 - silicon transistors cont’d - T - 3 3 O - 0 silicon power transistors rn * Polarity Power Dissipation @ 25°C Watts


    OCR Scan     		PDF 2N339 2N339A 2N340 2N340A 2N341 2N341A 2N342 2N342A 2N343 2N343A Transistors 2n551 Heat Sink to-39 2N1904 2N5068 2N2995 2N3916 2N3599 2N2951 2N3142 2N3444

    4010 IC

    Abstract: 2N6062 2N5927 ic 4010 2N4866 50110 TO-114 2N1936 2N1937 2N3266
    Text: NEU ENGLAND SEMICONDU CTOR b S b M ' m D000GS7 m 3 SRE D «NES Ic max — 2 0 to 6 0 A V ceo(sus) = 4 0 to 3 0 0 V fT = 0.6 to 3 0 MHz NPN TÜ-63 Case 807 V ce (sat ) @ IC/lB ( V @ A/A) VBE (SAT) @ IC/lB (V @A/A) VBE @ IC/VCE (V @ A/V) pd @ TC = 100 °C (Watts)


    OCR Scan     		PDF 0000G57 2N1936 2N1937 2N3265 102CV2 2N3266 602W2 2N4950 2N5250 507QT7 4010 IC 2N6062 2N5927 ic 4010 2N4866 50110 TO-114 2N1936 2N1937 2N3266

    RCA H 541

    Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
    Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK


    OCR Scan     		PDF

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


    OCR Scan     		PDF

    2N2222A mps

    Abstract: 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304
    Text: ¿S c iscre:e devices ^ ! jemitronicr hot line TOLL FREE NUMBER 800-777-3960 alpha-numeric index Type 1N34A 1N35 1N36 1N38.A.B 1N40 1N42 1N44/ 1N51 1N52,A 1N54,A 1N55AB 1N56,A 1N57,A 1N58.A 1N60.A 1N61 1N62 1N63,A 1N65 1N66.A 1N67.A 1N68.A 1N69,A 1N70,A 1N71


    OCR Scan     		PDF 1N34A 1N55AB 1N100 1N102 1N103 1N104 1N107 1N108 1N111/ 1N117 2N2222A mps 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304

    2N3920

    Abstract: 2N648 2N2004 2N2995 2N2202 2N2860 TO11 2N2228 2N29SA 2n4307
    Text: £ ^ I jemitronicr hot line discrete devices TOLL FREE NUMBER 800-777-3960 silicon transistors cont-d silicon small signal transistors choppers Type Polarity Power Dissipation @ 25°C mw tlFE @ lc Tj (°C) BVcbo (volts) HILL (volts) Vet (SAT @ lc (Min.)


    OCR Scan     		PDF 2N941* 2N942* 2N943* 2N944* 2N945* 2N946* 2N1676 2N1677 2N1917* 2N1918* 2N3920 2N648 2N2004 2N2995 2N2202 2N2860 TO11 2N2228 2N29SA 2n4307

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


    OCR Scan     		PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    2N1720

    Abstract: 2n2891 2N3055C 2n3198 2N1718 2N3172 2N3171 2N2632 2n2854 2N2984
    Text: ^alitran_ ^ moj©? ©atoil©© Devices. Inc. S T A N D A R D P A R T L IS T SINGLE DIFFUSED CHIP SELECTIONS MIN. VOLTS 306XC001 306XC092 331XC002 331XC0CI3 55 140 40 BO 140 333XC0D1 345XC0CI1 345XC002 345XC003 349XC001 349XC0C2 140 45


    OCR Scan     		PDF 306XC001 306XC092 33ixca 331XC002 331XC0CI3 333XC0D1 345XC0CI1 345XC002 345XC003 349XC001 2N1720 2n2891 2N3055C 2n3198 2N1718 2N3172 2N3171 2N2632 2n2854 2N2984

    STA6047

    Abstract: 2N1038 2n1039 LS 74151 2n2665 2N2661 germanium transistors NPN STA6048 STA9860 STA9861
    Text: silicon power transistors NPN TO-63 cont’d C(M AX) = 10 to 30A VcEO(SUS) = f T = 0.6 to 30 MHz 60 to 350V Is/b to F F tO N @ VcE ICEV Pd @ VcE(SAT) @ Ic/VcE Vbe t = 1sec Generic T r=100°c @ Ic/Ib d jc @ I c / Ib @ VCE fT (Min-Max @ I c / Ib @ Ic/VcE VcEO|SUS|


    OCR Scan     		PDF STAE046 STA6047 STA6048 2N2564 2N2565 2N2566 2N2567 2N2659 2N2660 2N2661 2N1038 2n1039 LS 74151 2n2665 germanium transistors NPN STA6048 STA9860 STA9861

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE TO-63 le max = 20 to 60A V c e o (su s) * NPN Power Transistors (A) hFE&C/VCE (mln-mu A/V) VCE(SAT) ©IC/IB (V0A/A) VBE ©IC/VCE (V© A/V) VBE(SAT) ©OB (V A/V) 60 80 90 60 20 20 20 20 10-50 @10/10 10-50 @10/10 25-55 @15/2


    OCR Scan     		PDF 2N3848 2N3S49 2N4002 2N4003 2N4210 2N4211 2N5539

    NPN 200 VOLTS 20 Amps POWER TRANSISTOR

    Abstract: 2N3021 2n3223 2N3589 NPN 20 Amps POWER TRANSISTOR to63 MT27 NPN 90 Amps POWER TRANSISTOR to63 2N3025 2NXXXX TO63 package
    Text: r ^ 3 *t3 SILICON TRANSISTOR C O R P _ 8 8 0 0 0 7 9 2 DE lflES40ea O O O O T T S b flfl NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Type Polarity lcMax Amps VCECKSUS) Volts Package Type Polarity . ^ 33^77 lc Max Amps VCEO(SUS)


    OCR Scan     		PDF flES40ea rr33T77 2N2812 2N2813 2N2814 2N2815 2N2816 2N2817 2N2818 2N2819 NPN 200 VOLTS 20 Amps POWER TRANSISTOR 2N3021 2n3223 2N3589 NPN 20 Amps POWER TRANSISTOR to63 MT27 NPN 90 Amps POWER TRANSISTOR to63 2N3025 2NXXXX TO63 package

    2NS404

    Abstract: Transistors 2n551 2N1018 2N1478 2N1620 2N551 2N2951 2N3920 2N3444 2N2204
    Text: jo m itr o n ic r discrete devices s e m ic o n d u c t o r s S em itronics Corp. silicon transistors cont'd silicon power transistors Power Dissipation @ 25°C Watts h FE @ lc BVc e (volts) (°C) BVcbo (volts) fC) |A) (Cl (Al (C) 150 200 150 200 150 55


    OCR Scan     		PDF 2N338 2N339A 2N340 2N340A 2N341 2N341A 2N342 2N342A 2N343 2N343A 2NS404 Transistors 2n551 2N1018 2N1478 2N1620 2N551 2N2951 2N3920 2N3444 2N2204

    2N5339 Diode

    Abstract: 40327 FR 302 Diode 2N4866 2N1479 2N1480 2N1481 2N1482 2N1700 2N5781
    Text: s g g g g g g g g 0 0 0 0 0 0 cncncncncncncncnroro A cn 0 Ö 0 0 Ö 0 0 Ö 0 Ö Ö Ö c o c o r o r o c o c o c o c o m m - * —i- — ^ C O C O C O —i- —i- — 0 cn cn b i c n c n c n b i c n o c n c n c n c n ö ö ö o o o o o 03 COO?COq?COJk.r*.-*>|COI'O.U


    OCR Scan     		PDF O-39/TO-5 TfiM515T0nrQ 2N1479 2N1480 2N1481 2N1482 2N1700 2N5784 2N5785 2N5786 2N5339 Diode 40327 FR 302 Diode 2N4866 2N5781