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2N1617 Datasheets (41)

Part	Manufacturer	Description	Datasheet Type	PDF
2N1617	Semelab	NPN SILICON TRANSISTOR - Pol=NPN / Pkg=TO61 / Vceo=70 / Ic=5 / Hfe=15-75 / fT(Hz)=3M / Pwr(W)=85	Original	PDF
2N1617	General Diode	Transistor Selection Guide	Scan	PDF
2N1617	General Semiconductor	Low Frequency Transistors	Scan	PDF
2N1617	Motorola	Motorola Semiconductor Datasheet Library	Scan	PDF
2N1617	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2N1617	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2N1617	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2N1617	Unknown	Vintage Transistor Datasheets	Scan	PDF
2N1617	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2N1617	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2N1617	Unknown	GE Transistor Specifications	Scan	PDF
2N1617	Unknown	Transistor Replacements	Scan	PDF
2N1617	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
2N1617	Pirgo Electronics	Power Transistors in TO-57 / TO-61	Scan	PDF

2N1617	Semelab	Bipolar Transistors (CECC and High Rel) & High Energy	Scan	PDF
2N1617	Semelab	Low Frequency Silicon Power NPN Transistor	Scan	PDF
2N1617	Semico	NPN Silicon Power Transistor Selection Guide	Scan	PDF
2N1617	Semitronics	Silicon Power Transistors	Scan	PDF
2N1617	SGS-Thomson	Transistor Datasheet	Scan	PDF
2N1617	Silicon Transistor	JAN / Consumer / Military / Industrial / Automotive / Hi-Rel	Scan	PDF

2N1617 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2N1617 Abstract: No abstract text available Text: 2N1617 MECHANICAL DATA Dimensions in mm inches NPN SILICON TRANSISTOR 1 0 .1 6 (0 .4 0 0 ) 1 7 .2 7 (0 .6 8 0 ) 1 9 .0 5 (0 .7 5 0 ) m in . ! • Bipolar Power Transistor 1 5 .4 2 (0 .6 0 7 ) m a x . • TO–61 Hermetic Package 7 .6 2 (0 .3 0 0 ) 8 .8 9	Original	2N1617 300mA 2N1617	PDF
Untitled Abstract: No abstract text available Text: 20 STERN AVE SPRINGFIELD, NEW JERSEY 07081 U.SA TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 378-8960 MECHANICAL DATA Dimensions in mm (inches) 2N1617 19.05 (0.750) mln. NPN SILICON TRANSISTOR to O i 31 si! Bipolar Power Transistor 15.42 (0.607) max.	Original	2N1617 100mA 250mA 300mA	PDF
2N1208 - 2N1212 Abstract: No abstract text available Text: <£s.m.i-Cond.u.ctoi ^Pr 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N1618 2N1208 - 2N1212 2N1724 2N1616/A - 2N1617/A 2N2101 POWER TRANSISTORS Sat Test Voltages Conditions PT TYPE @ NO. 25aC	Original	2N1618 2N1208 2N1212 2N1724 2N1616/A 2N1617/A 2N2101 2N1208 2N1209 2N1208 - 2N1212	PDF
Diode 400V 5A Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM	Original	2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN	PDF
2N1674 Abstract: Emihus 2N1605A 2N755 BC447 2N1724 2N2891 2N1666 BSW39 2N1664 Text: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31	Original	MPS5858 BFR50 TIPP31B ST4341 BSW65 2N1572 2N738 2N2517 2N755 2N1674 Emihus 2N1605A BC447 2N1724 2N2891 2N1666 BSW39 2N1664	PDF
b0951 Abstract: 2SC647 BLX19 BLX16 25G60 2n5979 2N4310 ST+T8+1060 Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 35 40 45 • 50 60 65 70 75 · · 80 ·85 90 · 95 912 Ie Max (A) V(BA)CEO (V) fT hFE Min Max (Hz) leBO Max (A) t, Max tf Max PD Max TOper Max (a) (a) (W) (OC) Package Style >= 5 A, (Co nt' d)	Original		PDF
2N2856 Abstract: a/TO111 Text: A P I ELECTRONICS INC ' 00 43 59 2 A P I E L E C T R O N I C S ' INC 5b Ï Ë J 00435^5 0D0DE51 fl 26C 00221 ~T ~33~Dt COLLECTOR CURRENT = 5 AMPS NPN TYPES Device No 2N1616 2N1617 2N1618 2N1702 2N2150 2N2151 2N2657 2N2658 2N2849 2N2849-1 2N2849-2 2N2849-3	OCR Scan	0D0DE51 2N1616 2N1617 2N1618 2N1702 2N2150 2N2151 2N2657 2N2658 2N2849 2N2856 a/TO111	PDF
STA9750 Abstract: 2N1616 2N1616A 2N1617 2N1617A 2N1618 2N1618A STA8650 STA9650 Text: Silicon power transistors NPN TO-61 @ Ic/VcE Type# 2N1616 2N1616A 2N1617 2N1617A 2N1618 2N1618A Typical Values STA8650 STA86S1 STA8652 VcEOISUS] Volts 60 60 70 70 80 80 80 60 100 140 (Min-Max ls/b VcE(SAT) @ I c/ I b @ A/V) 15-75@2/12 20-60 @ 2/4 15-75@2/12	OCR Scan	2N1616 2N1616A 2N1617 2N1617A 2N1618 2N1618A STA9750 STA9751 STA9752 STA8650 STA9650	PDF
2N2632 Abstract: No abstract text available Text: t le = 5.0 AMPS 4-6 DEVICE TYPE PACKAGE 2N1208 2NÎ209 2N1212 2N1616 2N1617 TO-61 TO-61 TO-61 TO-61 TO-61 2N1618 2N1702 2N1724 2N1724A 2N1725 TO-61 TO-3 TO-61 TO-61 TO-61 2N2632 2N2633 2N2634 2N2657 2N2658 hFE@ VOLTS BVeb0 VOLTS P D@ 100°C WATTS 60 45 60	OCR Scan	2N1208 2N1212 2N1616 2N1617 2N1618 2N1702 2N1724 2N1724A 2N1725 2N2632	PDF
Untitled Abstract: No abstract text available Text: 8134693 SEMICOA MO DÉ 5 1 3 ^ 3 QDDOIEb 3 -Q\ NPN SILICON POWER TRANSISTORS Cont’d) Maximum Ratings Device Dissipation Type No. @ 25°C NPN (Case) Watts 2N2880 2N2852 2N2851 2N2850 -2N2658 2N2849 2N4309 2N4305 2N5336 2N5337 2N1617 2N4897 2N4150 2N5152	OCR Scan	2N2880 2N2852 2N2851 2N2850 -2N2658 2N2849 2N4309 2N4305 2N5336 2N5337	PDF
Untitled Abstract: No abstract text available Text: GENERAL SEMICONDUCTOR 3918590 GENERAL « S EMI CON DU CT OR DE 1 3^105^0 □□□5GT5 fl 95D . 02092 D le = 5.0 AMPS - r • W 'CPi BVceo/ DEVICE TYPE PACKAGE 2N1208 2N1209 2N1212 2N1616 2N1617 TO -61 TO -61 TO -61 TO -61 TO -61 2N1618 2N1724 2N1724A 2N1725	OCR Scan	2N1208 2N1209 2N1212 2N1616 2N1617 2N1618 2N1724 2N1724A 2N1725 2N2632	PDF
2n1620 Abstract: 2n1958 oms 450 2N1617/I 2N1619 2SC114 SOT1156 Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E No. t * # § 40°c H H TYPE N o. I I M IN . M A X P c ID E R A T E	OCR Scan		PDF
2N4116 Abstract: 2N5304 2N2658 2N2849 2N2850 2N2851 2N2852 2N2880 2N4305 2N4309 Text: 8 1 3 4 6 9 3 S E M I CO A 40 j Ë~\| 6 1 3 ^ 3 OOOOlBb 3 ^~T‘<J>7 - Q \ NPN SILICON POWER TRANSISTORS C ont’d) Electrical Characteristics @ 25°C Maximum Ratings Device Dissipation Type No. @25°C NPN (Case) Watts 30 2N2880 5 2N2852 5 2N2851 5 2N2850	OCR Scan	fll34fc, 2N2880 2N2852 2N2851 2N2850 -2N2658 2N2849 2N4309 2N4305 2N5336 2N4116 2N5304 2N2658	PDF
2N1047 Abstract: SOLID POWER CORP 2n1768 2N104 2N176 2N1050A 2n1769 2N1047B 2N1048 2N1048B Text: 8 3 6 5 7 0 0 S O L I D PO WE R C O R P 95C 0 0 1 1 6 SOLID POWER CORP T5 D "T"^3 Û f DE \| fl3bS7DD DDDDllb 2 P O W E R T R A N S IS T O R S PT 2N1047 TO-57 40 aS hFE MAXIM UM RATINGS @ Ic 25°C BVcbo BV ceo BV ebo V V V A Watts TYPE NO. Ic A MIN MAX V CE	OCR Scan	2N1047 2N1048 2N1049 2N1050 2N1047A 2N1048A f2N1049A t2N1050A 2N1047B 2N1048B 2N1047 SOLID POWER CORP 2n1768 2N104 2N176 2N1050A 2n1769 2N1047B 2N1048 2N1048B	PDF

AL102 ATES Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29 Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible	OCR Scan	Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29	PDF
2n2301 Abstract: 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815 Text: . GENERAL DIODE CORP d T J 3 f l b T 72 0 Sb GD OOB D 4 ö \| 7 - - 2-*? ~ D SILICON P L A N A R TRANSISTO RS — S M A L L SIG N A L VI TYPE 2N72» 2N727 2N8E9 2N869A 2N92S 300 •300 360 360 300 2N929A 2N930 2N930A 2N1S72 2N1573 NPN NPN NPN NPN NPN • 2N1S74	OCR Scan	2N727 2N869A 2N929A 2N930' 2N930A 2N1572 2N1S73 2N1574 2N24S3 2N2484 2n2301 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815	PDF
2N2753 Abstract: S1482 JAN2N1480 jantx 2N2771 2N2034 jan2n1482 2N2580M 2n2110 Text: IN D EX Type No. 2N389 2N389A 2N424 2N424A 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B 2N1016C 2M 016D 2N1016E 2N1016F 2N1047 2N1047A 2N1047B 2N1048 2N1048A 2N1048B 2N1049 2N1049A 2N1049B 2N1050 2N1050A 2N1050B 2N1067 2N1068	OCR Scan	2N389 2N389A 2N424 2N424A 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N2753 S1482 JAN2N1480 jantx 2N2771 2N2034 jan2n1482 2N2580M 2n2110	PDF
2SD45 Abstract: SOT1156 2sc768 2N1210-1 2N1619 2N1620 SDT1152 MHT6311 MHT6312 MHT6313 Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT	OCR Scan	NPN110. SDT1156 SDT1157 400mS SDT1158 SDT1159 400ml SDT1160 SDT1161 2SD45 SOT1156 2sc768 2N1210-1 2N1619 2N1620 SDT1152 MHT6311 MHT6312 MHT6313	PDF
2n189 Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152 Text: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits	OCR Scan	2G101* 2G102* 2G103* 2G109 2G220 2G221 2G222 2G223 2G224 2n189 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152	PDF
aeg diode Si 61 L Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680 Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books	OCR Scan	11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680	PDF
2N1050A Abstract: transistor 2n1208 2N1047 2N1047A 2N1047B 2N1048 2N1048A 2N1048B 2N1049 2N1049B Text: A P I ELECTRONI CS INC blE D • GDMaS'iS □□□02'iM bfl? ■ AfIC POWER TRANSISTORS TYPE NO. TO-57 PT @ 25°C Watts MAXIMUM RATINGS B V c b o B V ceo B V ebo Ic V V V A T-33-l Sat Voltages hFE MIN MAX Ic A V CE V VCE V be v V Test Conditions IB Ic I ebo	OCR Scan	00QG2S4 2N1047 2N1048 2N1049 2N1050 2N1047A 2N1048A f2N1049A 2N1050A 2N1047B transistor 2n1208 2N1048B 2N1049B	PDF
transistor 2N4 Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748 Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: «gl —I * i ; l e c t r i ì r u c s ini. POWER TRANSISTORS PT TYPE NO SECTION 3 TO-57 @ 25°C Watts M AXIM UM RATINGS B V c b o B V c eo B V ebo le V V A V hFE Sat Voltages Cà> le A MIN MAX VCE V V ce be V V V Test Conditions Ib le A A I eb o ma 2N1047	OCR Scan	2N1047 2N1048 2N1049 2N1209 2N1212 2N1616 2N1617 2N1618 2N2101	PDF
2N2210 Abstract: 2N2223 200H 250M T018 T072 2N1724A 706A Text: MfiE D m fll331fi7 □□□□433 31T • SMLB SEMELABtSEMELAB BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Rei Code 2N 696 2N 697 2N 706 2N 706A 2N 718A 2N 720A 2N 722 2N 869 2N 869A 2N 914 2N 915 2N 916 2N 918 2N 930 2N 930A 2N1132 2N1483A 2N1484A	OCR Scan	D00aM33 40min 75min 20min l/10m 25min 5/10m 2N2210 2N2223 200H 250M T018 T072 2N1724A 706A	PDF

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2N1617 Datasheets (41)

2N1617 Datasheets Context Search

2N1617

Untitled

2N1208 - 2N1212

Diode 400V 5A

2N1674

b0951

2N2856

STA9750

2N2632

Untitled

Untitled

2n1620

2N4116

2N1047

AL102 ATES

2n2301

2N2753

2SD45

2n189

aeg diode Si 61 L

2N1050A

transistor 2N4

Untitled

2N2210