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    2N130 Search Results

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    Amphenol Communications Solutions 70232-N130

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    2N130 Datasheets (223)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N130 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N130 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N130 Unknown GE Transistor Specifications Scan PDF
    2N130 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N130 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N130 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N130 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N130 Unknown Vintage Transistor Datasheets Scan PDF
    2N130 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N1300 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N1300 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N1300 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N1300 Unknown GE Transistor Specifications Scan PDF
    2N1300 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N1300 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N1300 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N1300 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N1300 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N1300 Unknown Vintage Transistor Datasheets Scan PDF
    2N1300 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    ...

    2N130 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    1N1307

    Abstract: 2N1303 2N1309
    Text: ^Ssmi-^onductoi ^Piodacti, TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TYPES 2N1303, 2N1305, 2N1307, AND 2N1309 P-N-P ALLOY-JUNCTION GERMANIUM TRANSISTORS electrical characteristics at 25°C free-air temperature


    Original     		2N1303, 2N1305, 2N1307, 2N1309 1N130J N1309 N1307 N1J09 2N1305 IN1303 1N1307 2N1303 2N1309 PDF

    germanium transistors NPN

    Abstract: 2N1306 germanium NPN
    Text: 2N1306 Ge NPN Lo-Pwr BJT 7.63 Transistors Bipolar Germanium NPN Low-Power Tra. Page 1 of 1 Enter Your Part # Home Part Number: 2N1306 Online Store 2N1306 Diodes Ge N PN L o -Pw r B JT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics


    Original     		2N1306 2N1306 com/2n1306 germanium transistors NPN germanium NPN PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N1307 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)30 I(C) Max. (A)300m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)6.0uØ @V(CBO) (V) (Test Condition)25 h(FE) Min. Current gain.60 h(FE) Max. Current gain.300


    Original     		2N1307 Freq10MÂ PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N1302+JAN Transistors Ge NPN Lo-Pwr BJT Military/High-RelY V BR CEO (V) V(BR)CBO (V)25 I(C) Max. (A)300m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)6.0u @V(CBO) (V) (Test Condition)25 h(FE) Min. Current gain.20 h(FE) Max. Current gain.


    Original     		2N1302 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N130 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)22 V(BR)CBO (V)25 I(C) Max. (A)10m Absolute Max. Power Diss. (W)85m Maximum Operating Temp (øC) I(CBO) Max. (A)12u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.22 h(FE) Max. Current gain.


    Original     		2N130 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N1308+JAN Transistors Ge NPN Lo-Pwr BJT Military/High-RelY V BR CEO (V) V(BR)CBO (V)25 I(C) Max. (A)300m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)6.0u @V(CBO) (V) (Test Condition)25 h(FE) Min. Current gain.80 h(FE) Max. Current gain.


    Original     		2N1308 Freq15MÂ PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N1309A Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)35 I(C) Max. (A)300m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)6.0u @V(CBO) (V) (Test Condition)25 h(FE) Min. Current gain.20 h(FE) Max. Current gain.


    Original     		2N1309A Freq15MÂ eq15MÂ PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N1303+JAN Transistors Ge PNP Lo-Pwr BJT Military/High-RelY V BR CEO (V) V(BR)CBO (V)30 I(C) Max. (A)300m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)6.0uØ @V(CBO) (V) (Test Condition)25 h(FE) Min. Current gain.20 h(FE) Max. Current gain.


    Original     		2N1303 PDF

    Low-Power Germanium PNP

    Abstract: 2N218 ASZ20 2N295 Diode 13M 2N2374 2n274 CK66A 2N466 TO9 package
    Text: LOW-POWER GERMANIUM PNP Item Number Part Number 5 10 15 20 25 30 2N422 2Nl09 2N217 2N274 2N633 2N1415 2N1866 2N1998 2N598 GT125SZ GT125V 2N602A 2N1175 2N1175A 2N1309A 2S8461 2Nl174 CK668 CK66C 2N466 eK66 CK66A GT125G 2N600 2N2374 PTC145 CK678 CK67C 2N467 CK67


    Original     		2N422 2Nl09 2N217 2N274 2N633 2N1415 2N1866 2N1998 2N598 GT125SZ Low-Power Germanium PNP 2N218 ASZ20 2N295 Diode 13M 2N2374 CK66A 2N466 TO9 package PDF

    2n1304

    Abstract: Low-Power Germanium NPN
    Text: 2N1304 Ge NPN Lo-Pwr BJT 2.90 Transistors Bipolar Germanium NPN Low-Power Tra. Page 1 of 1 Enter Your Part # Home Part Number: 2N1304 Online Store 2N1304 Diodes Ge N PN L o -Pw r B JT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics


    Original     		2N1304 2N1304 com/2n1304 Low-Power Germanium NPN PDF

    2N1308

    Abstract: motorola 20p
    Text: 2N1308 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N1308 Availability Online Store


    Original     		2N1308 2N1308 STV3208 LM3909N LM3909 motorola 20p PDF

    2N1306 JAN

    Abstract: No abstract text available
    Text: 2N1306+JAN Transistors Ge NPN Lo-Pwr BJT Military/High-RelY V BR CEO (V) V(BR)CBO (V)25 I(C) Max. (A)300m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)6.0u @V(CBO) (V) (Test Condition)25 h(FE) Min. Current gain.60 h(FE) Max. Current gain.300


    Original     		2N1306 Freq10MÂ 2N1306 JAN PDF

    2N1309

    Abstract: No abstract text available
    Text: 2N1309 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)30 I(C) Max. (A)300m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)6.0uØ @V(CBO) (V) (Test Condition)25 h(FE) Min. Current gain.80 h(FE) Max. Current gain.


    Original     		2N1309 Freq15MÂ req15MÂ PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N130A Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)45 I(C) Max. (A)100m Absolute Max. Power Diss. (W)102m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)15uØ @V(CBO) (V) (Test Condition)20 h(FE) Min. Current gain.25 h(FE) Max. Current gain.


    Original     		2N130A Freq700k PDF

    2N1305

    Abstract: pnp germanium low power bjt
    Text: 2N1305 Ge PNP Lo-Pwr BJT 13.50 Transistors Bipolar Germanium PNP Low-Power Tra. Page 1 of 1 Enter Your Part # Home Part Number: 2N1305 Online Store 2N1305 Diodes Ge PN P Lo -Pw r B JT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics


    Original     		2N1305 2N1305 th150m com/2n1305 pnp germanium low power bjt PDF

    germanium transistors PNP

    Abstract: 2N1307 germanium PNP
    Text: 2N1307 Ge PNP Lo-Pwr BJT 2.75 Transistors Bipolar Germanium PNP Low-Power Tran. Page 1 of 1 Enter Your Part # Home Part Number: 2N1307 Online Store 2N1307 Diodes Ge PN P Lo -Pw r B JT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics


    Original     		2N1307 2N1307 com/2n1307 germanium transistors PNP germanium PNP PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N1304 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)25 I(C) Max. (A)300m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)6.0u @V(CBO) (V) (Test Condition)25 h(FE) Min. Current gain.40 h(FE) Max. Current gain.200


    Original     		2N1304 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N1302 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)25 I(C) Max. (A)300m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)6.0u @V(CBO) (V) (Test Condition)25 h(FE) Min. Current gain.20 h(FE) Max. Current gain.


    Original     		2N1302 PDF

    2N1303

    Abstract: No abstract text available
    Text: 2N1303 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)30 I(C) Max. (A)300m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)6.0uØ @V(CBO) (V) (Test Condition)25 h(FE) Min. Current gain.20 h(FE) Max. Current gain.


    Original     		2N1303 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N1306 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)25 I(C) Max. (A)300m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)6.0u @V(CBO) (V) (Test Condition)25 h(FE) Min. Current gain.60 h(FE) Max. Current gain.300


    Original     		2N1306 Freq10MÂ eq10MÂ PDF

    2n1300

    Abstract: No abstract text available
    Text: 2N1300 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)12 V(BR)CBO (V)13 I(C) Max. (A)100m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)3.0u @V(CBO) (V) (Test Condition)6.0 h(FE) Min. Current gain.30 h(FE) Max. Current gain.50Â


    Original     		2N1300 Freq25M PDF

    2N1305 TEXAS INSTRUMENTS

    Abstract: 2N1307 TEXAS INSTRUMENTS 030i TRANSISTOR 2G374 2N711 TEXAS INSTRUMENTS 2N1305 2n388 texas instruments 2N404 transistor 2N711B 2n711
    Text: Germanium Transistors T ype C a se No. C o *" " 0 0 c <u o « o “ NPN 2N388 T05 A General 2N388A T05 A Purpose 2N1302 T05 A and Switching 2N1304 T05 A 2N1305 T05 A 2N1308 T05 A S P E C IA L C h a ra c te ris tic s M axim u m R a tin g s at 25°C amb. •¿z 0>


    OCR Scan     		2N388 2N388A 2N1302 2N1304 2N1306 2N1308 2G302 TIXM107/8 2N1305 TEXAS INSTRUMENTS 2N1307 TEXAS INSTRUMENTS 030i TRANSISTOR 2G374 2N711 TEXAS INSTRUMENTS 2N1305 2n388 texas instruments 2N404 transistor 2N711B 2n711 PDF

    pnp germanium transistor

    Abstract: 2N1305 2N1303 2N1307 2N1309 transistor 2N1309 germanium transistor pnp germanium transistor power germanium transistor pnp transistor pnp Vcbo 25V
    Text: cen tra l sem iconductor € rp„ Central Semiconductor Corp. ♦I Central Sem iconductor Corp. Central Semiconductor Corp. 2N1303 2N1305 2N1307 2N1309 ! PNP GERMANIUM TRANSISTOR JE D E C TO-5 CASE 145 Adams Avenue Hauppauge, New York 117 88 DESCRIPTION


    OCR Scan     		2N1303 2N1305 2N1307 2N1309 2N1303, 2N1305, pnp germanium transistor transistor 2N1309 germanium transistor pnp germanium transistor power germanium transistor pnp transistor pnp Vcbo 25V PDF

    2N1306

    Abstract: 2N1304 2N1308 2n1302 2n1304 transistor germanium transistor germanium npn germanium transistors NPN Application of 2n1304 850C
    Text: 2N1302 2N1304 2N1306 2N1308 ♦I Central Semiconductor Corp. Central semiconductor Corp. 145 Adams Avenue Hauppauge, New York 11 788 NPN GERMANIUM TRANSISTOR JEDEC TO 5 CASE DESCRIPTION T he C E N T R A L S E M I C O N D U C T O R 2N1302, 2N1304, 2N1306 and 2N1308 a r e G erm anium


    OCR Scan     		2N1302 2N1304 2N1306 2N1308 2N1302, 2N1304, 2N1308 2n1304 transistor germanium transistor germanium npn germanium transistors NPN Application of 2n1304 850C PDF