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Text: 2SC3738 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)800 V(BR)CBO (V)1.2k I(C) Max. (A)10 Absolute Max. Power Diss. (W)3.5 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)1k V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)800m
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2SC3738
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Untitled
Abstract: No abstract text available
Text: 2N415A Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)30 I(C) Max. (A)200m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)5.0u @V(CBO) (V) (Test Condition)12 h(FE) Min. Current gain. h(FE) Max. Current gain.
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2N415A
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Abstract: No abstract text available
Text: 2SC3979 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)900â V(BR)CBO (V)900 I(C) Max. (A)3 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition)900 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)800m
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2SC3979
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Untitled
Abstract: No abstract text available
Text: 2N415 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)30 I(C) Max. (A)200m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)5.0u @V(CBO) (V) (Test Condition)12 h(FE) Min. Current gain. h(FE) Max. Current gain.
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2N415
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