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    2N633 Search Results

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    2N633 Price and Stock

    Rochester Electronics LLC 2N6338G

    POWER BIPOLAR TRANSISTOR, 25A, 1
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    Microchip Technology Inc 2N6331

    TRANS PNP 100V 30A TO3
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    Microchip Technology Inc 2N6330

    NPN TRANSISTOR
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    Microchip Technology Inc 2N6339

    NPN TRANSISTOR
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    onsemi 2N6338

    TRANS NPN 100V 25A TO204
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    2N633 Datasheets (178)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N633 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N633 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N633 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N633 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N633 Unknown GE Transistor Specifications Scan PDF
    2N633 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N633 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N633 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N633 Unknown Vintage Transistor Datasheets Scan PDF
    2N633 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6330 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N6330 API Electronics Transistor Selection Guide Scan PDF
    2N6330 API Electronics Short form transistor data Short Form PDF
    2N6330 Diode Transistor Transistor Short Form Data Scan PDF
    2N6330 General Transistor Power Transistor Selection Guide Scan PDF
    2N6330 Magnatec PNP SILICON POWER TRANSISTORS Scan PDF
    2N6330 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N6330 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6330 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6330 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    ...

    2N633 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6339

    Abstract: 2N6340 2N6338 2N6341 2N6436
    Text: SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N6338 2N6339 2N6340 2N6341 DESCRIPTION •With TO-3 package ·Fast switching times ·Low collector saturation voltage ·Complement to type 2N6436~38 APPLICATIONS ·For use in industrial-military power amplifier


    Original     		PDF 2N6338 2N6339 2N6340 2N6341 2N6436 2N6338 2N6339 2N6340 2N6341

    GE C106Y

    Abstract: SFOR1A42 TO-202AB To226AB DRA03A 2SF101B TO202AB 2SF101 SN200 HS34S
    Text: SILICON CONTROLLED RECTIFIERS Item Number Part Number SCRs, VDRM 5 10 MMBS5060 BRX44 BRX44 C103Y C203Y S1Y BRY55•30 BRY55S30 MCR102 2N5060 ~~~gg1 15 20 S031E C205Y C205Y C205Y 2N1876A 2N1876 2N1870 2N1870A ~~3~1~1 25 30 2N3559 C106Y SN200 2N6332 C107Y2 C107Y4


    Original     		PDF MMBS5060 BRX44 C103Y C203Y BRY55 BRY55S30 MCR102 2N5060 S031E GE C106Y SFOR1A42 TO-202AB To226AB DRA03A 2SF101B TO202AB 2SF101 SN200 HS34S

    2N3265

    Abstract: 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341 DSASW0036858
    Text: Device Type 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341 VCEO V 90 60 60 80 100 120 140 150 hFE VCE @ IC (A) (sat) Max @ IC (A) Min/Max (V) 20/55 15.0 1.00 20.0 20/80 15.0 1.60 20.0 20/100 10.0 1.00 15.0 20/100 10.0 1.00 15.0 30/120 10.0 1.00


    Original     		PDF 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341 DSASW0036858

    Untitled

    Abstract: No abstract text available
    Text: 2N6338X Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N6338X O204AA) 18-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: 2N6339X Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N6339X O204AA) 16-Jul-02

    equivalent to tip162

    Abstract: 2SA1046 2N3055 BU108 2n6258 BU326 BU100 BD262 buv23 2n5632
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors 2N6338 2N6339 2N6340 2N6341* . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage — VCEO sus = 100 Vdc (Min) — 2N6338


    Original     		PDF 2N6338 2N6339 2N6340 2N6341 2N6436 Continu32 TIP73B TIP74 TIP74A TIP74B equivalent to tip162 2SA1046 2N3055 BU108 2n6258 BU326 BU100 BD262 buv23 2n5632

    2N6341

    Abstract: 2N6338G 2N6338 2N6341G
    Text: 2N6338, 2N6341 High-Power NPN Silicon Transistors . . . designed for use in industrial−military power amplifier and switching circuit applications. • High Collector−Emitter Sustaining Voltage − VCEO sus = 100 Vdc (Min) − 2N6338 = 150 Vdc (Min) − 2N6341


    Original     		PDF 2N6338, 2N6341 2N6338 2N6341 2N6338/D 2N6338G 2N6338 2N6341G

    2N6339

    Abstract: motorola 2n6338 2N6338 2N6340 20Vdc 1N4933 2N6341 2N6436 2N6338-D
    Text: MOTOROLA Order this document by 2N6338/D SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors 2N6338 2N6339 2N6340 2N6341* . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage —


    Original     		PDF 2N6338/D 2N6338 2N6339 2N6340 2N6341* 2N6341 2N6436 2N6339 motorola 2n6338 2N6338 2N6340 20Vdc 1N4933 2N6341 2N6338-D

    1N4933

    Abstract: 2N6338 2N6341
    Text: ON Semiconductort High-Power NPN Silicon Transistors 2N6338 2N6341* . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage – VCEO sus = 100 Vdc (Min) – 2N6338


    Original     		PDF 2N6338 2N6341* 2N6341 r14525 2N6338/D 1N4933 2N6338 2N6341

    Untitled

    Abstract: No abstract text available
    Text: 2N6338X Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N6338X O204AA) 16-Jul-02

    Low-Power Germanium PNP

    Abstract: 2N218 ASZ20 2N295 Diode 13M 2N2374 2n274 CK66A 2N466 TO9 package
    Text: LOW-POWER GERMANIUM PNP Item Number Part Number 5 10 15 20 25 30 2N422 2Nl09 2N217 2N274 2N633 2N1415 2N1866 2N1998 2N598 GT125SZ GT125V 2N602A 2N1175 2N1175A 2N1309A 2S8461 2Nl174 CK668 CK66C 2N466 eK66 CK66A GT125G 2N600 2N2374 PTC145 CK678 CK67C 2N467 CK67


    Original     		PDF 2N422 2Nl09 2N217 2N274 2N633 2N1415 2N1866 2N1998 2N598 GT125SZ Low-Power Germanium PNP 2N218 ASZ20 2N295 Diode 13M 2N2374 CK66A 2N466 TO9 package

    1N4933

    Abstract: 2N6338 2N6341
    Text: ON Semiconductort High−Power NPN Silicon Transistors 2N6338 2N6341* . . . designed for use in industrial−military power amplifier and switching circuit applications. • High Collector−Emitter Sustaining Voltage − VCEO sus = 100 Vdc (Min) − 2N6338


    Original     		PDF 2N6338 2N6341* 2N6341 2N6338/D 1N4933 2N6338 2N6341

    2N4398

    Abstract: 2N4399 2N6329 2N6330 2N6331 AP1020 AP1021 AP1048 AP1049 AP1050
    Text: 0043592 A P I A P I ELECTRONICS ELECTRONICS INC INC D yZ-SS-TX 26C 0 0 2 3 8 ' Sb DE | OOMBSTS 3 C O L L E C T O R C U R R E N T = 3 0 A M PS P N P T Y P E S D e v ic e No C a se 2N4398 2N4399 2N6329 2N 6330 2N6331 A P1020 A P1021 A P1048 A P 1049 A P1050


    OCR Scan     		PDF 2N4398 2N4399 2N6329 2N6330 2N6331 AP1020 AP1021 AP1048 AP1049 AP1124 AP1050

    2n6338 MOTOROLA

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 2N6338/D SEMICONDUCTOR TECHNICAL DATA H igh-P ow er NPN Silicon Transistors . . . designed for use in industrial—military power amplifier and switching circuit applications. • High Collector-Emitter Sustaining Voltage —


    OCR Scan     		PDF 2N6338/D 2N6338 2N6339 2N6340 2N6341 2N6436-38 2n6338 MOTOROLA

    AP1020

    Abstract: 2N4398 2N4399 2N6329 2N6330 2N6331 AP1021 AP1048 AP1049 AP1050
    Text: 0043592 A P I A P I ELECTRONICS ELECTRONICS INC INC 26C 0 0 2 3 8 ' Sb D yZ-SS-TX DE | OOMBSTS 3 C O L L E C T O R C U R R E N T = 3 0 A M PS P N P T Y P E S D e v ic e No C a se 2N4398 2N4399 2N6329 2N 6330 2N6331 A P1020 A P1021 A P1048 A P 1049 A P1050


    OCR Scan     		PDF 2N4398 2N4399 2N6329 2N6330 2N6331 AP1020 AP1021 AP1048 AP1049 AP1124 AP1050

    5305da

    Abstract: 5305d 2N6329 2N6330 2n6331
    Text: T Y P E S 2N6329, 2N6330, 2N6331 P-N -P S IN G L E -D IF F U S E D M ES A SILICON P O W ER T R A N S IS T O R S IB H C -< FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH 2N6326, 2N6327, 2N6328 • 200 W at 25° C Case Temperature


    OCR Scan     		PDF 2N6329, 2N6330, 2N6331 2N6326, 2N6327, 2N6328 200-mJ 2N6329 2N6330 2N6331 5305da 5305d

    2n6337

    Abstract: 2N6334 2N6332 2N6336
    Text: TYPES 2N6332 THRU 2N6337 PLANAR SILICON REVERSE-BLOCKING TRIODE THYRISTORS • High Operating Temperatures • High Surge Current Capability • Fast Switching Speeds • Low Forward Voltage Drop TYPES 2N6332 THRU 2N6337 BULLETIN NO. DL-S 7211633, JANUARY


    OCR Scan     		PDF 2N6332 2N6337 0i370 2N6334 2N6336

    BUT36

    Abstract: BUT14 BUT35 mj11016 transistors but35 2N5885 MOTOROLA BUS98 2N5883 2N5884 2N5885
    Text: POWER TRANSISTORS — BIPOLAR METAL continued TO-2Q4AA (FORMERLY TO-3) (continued) R esistive S w itching h lcCont VcEO (sus) Amps Max Volts Min 24 1000 25 60 2N5885 2N5883 80 2N5886 2N5884 2N6436 100 2N6338 120 2N6339 125 BUV10 BUX10 28 30 50 @ lc MHZ Watts


    OCR Scan     		PDF BUT36 2N5885 2N5883 2N5886 2N5884 2N6436 2N6338 2N6437 2N6339 2N6438 BUT36 BUT14 BUT35 mj11016 transistors but35 2N5885 MOTOROLA BUS98

    2N5330

    Abstract: 2N5672 2N6258 2N2823 2N2824 2N2825 2N3265 2N3266 2N3771 2N3846
    Text: - 18 l i j j i l E LE C T R O N IC S , INC. COLLECTOR CURRENT = 25 AMPS NPN TYPES Device No Case v CBO Volts 2N3265 2N3266 2N6338 2N6339 2N6340 2N6341 TO-63 TO-63 TO-3 TO-3 TO-3 TO-3 150 85 120 140 160 180 VCEO sus Volts 90 60 100 120 140 150 Veb o Volts


    OCR Scan     		PDF 2N3265 2N3266 2N6338 2N6339 2N6340 2N6341 2N2823 2N6273 2N6322 2N6323 2N5330 2N5672 2N6258 2N2824 2N2825 2N3771 2N3846

    1501-33

    Abstract: 2N5686 2N5860 2N5745 45020 2N5301 2N5303 2N5880 2N5881 2N5882
    Text: Typ#* PNP Compls- VCEUSIM lc mont Voltt) M u 2N5881 2N5882 2NS879 2NS880 2N5301 2NS302 2N5303 2N5885 2N5886 2N6326 2N6327 2N632B MJ802 MJ3771 MJ3772 2N4398 2N4399 2N5745 2N5883 2N5884 2H6329 2N6330 2N6331 2N5685 2N5686 MJ14000 MJ14002 2N5683 2N5684 MJ14001


    OCR Scan     		PDF Tc-25Â 2N5881 2N5882 2NS879 2N5880 2N5301 2NS302 2N5303 2N5885 2N5886 1501-33 2N5686 2N5860 2N5745 45020

    2N2820

    Abstract: 2N2821 2N2822 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340
    Text: "i T _ 0043592 A P I ELECTRONICS INC p I ELECTRONICS INC 26C 0 0 2 3 6 “ 7k D 7^.3? Je|WsÍ1mD53iT D | CO LLECTO R CURRENT = 2 5 AMPS NPN TY PE S D evice No C ase v CBO Volts 2N2820 2N2821 2N2822 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341 TO -63


    OCR Scan     		PDF 000D53J 2N2820 2N2821 2N2822 2N3265 2N3266 2N5885 2N5886 2N6338 2N6320 2N6339 2N6340

    2N4398

    Abstract: 2N4399 2N6329 2N6330 2N6331 AP1020 AP1021 AP1048 AP1049 AP1050
    Text: COLLECTOR CURRENT = 30 AMPS PNP TYPES Device No Case 2N4398 2N4399 2N6329 2N6330 2N6331 AP1020 AP1021 AP1048 AP1049 AP1050 AP1063 AP1071 AP1095 AP1096 AP1113 TO -3 TO-3 TO-3 TO -3 TO-3 TO-3 TO-63 TO-63 TO-3 T O -63 TO-63 TO-3 TO-63 TO-3 TO 61/1 TO-63 TO-3


    OCR Scan     		PDF 2N4398 2N4399 2N6329 2N6330 2N6331 AP1020 AP1021 AP1048 AP1049 AP1050

    2N6341

    Abstract: 2N6338 2N6339 2N6340 High-Power NPN Silicon Power Transistor
    Text: HIGH-POWER NPN SILICON TRANSISTORS NPN 2N6338 2N6339 2N6340 2N6341 . designed for use in industrial power amplifiers and switching circuit applications. FEATURES: * High DC Current Gain hFE=30-120 @ lc =10A =12 Min @lc=25A * Low Collector-Emitter Saturation Voltage


    OCR Scan     		PDF 2N6436-38 2N6338 2N6339 2N6340 2N6341 10MHz) High-Power NPN Silicon Power Transistor

    2N5330

    Abstract: No abstract text available
    Text: 18 u J j i Ê ELE C TR O N IC S , INC. COLLECTOR CURRENT = 25 AMPS NPN TYPES D evice No C ase v CBO V olts 2N3265 2N3286 2N6338 2N6339 2N6340 2N6341 TO -63 TO-63 TO-3 TO - 3 TO-3 TO-3 150 85 120 140 160 180 hFF v EBO V olts ""OTn" Max VCEO V olts 90 60 100


    OCR Scan     		PDF 2N3265 2N3286 2N6338 2N6339 2N6340 2N6341 2N2823 2N2824 2N2825 2N3771 2N5330