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    2SK300 Search Results

    2SK300 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    2SK3000ZY-TL-E Renesas Electronics Corporation Nch Single Power Mosfet 40V 1.0A 300Mohm Mpak/Sc-59 Visit Renesas Electronics Corporation
    SF Impression Pixel

    2SK300 Price and Stock

    Sanken Electric Co Ltd 2SK3004

    MOSFET N-CH 250V 18A TO220F
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK3004 Tube 3,750
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $2.03252
    		Buy Now
    Chip1Stop 2SK3004 80
    • 1 -
    • 10 $5.27
    • 100 $4.8
    • 1000 $4.8
    • 10000 $4.8
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    Sanken Electric Co Ltd 2SK3003

    MOSFET N-CH 200V 18A TO220F
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK3003 Tube 3,750
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.96738
    		Buy Now

    Renesas Electronics Corporation 2SK3000ZY-90TL-E

    Power MOSFET, N Channel, 40 V, 1 A, 300 Milliohms, MPAK, 3 Pins, Surface Mount - Tape and Reel (Alt: 2SK3000ZY-90TL-E)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 2SK3000ZY-90TL-E Reel 4 Weeks 699
    • 1 -
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    • 1000 $0.51925
    • 10000 $0.51925
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    Rochester Electronics 2SK3000ZY-90TL-E 30,000 1
    • 1 $0.5222
    • 10 $0.5222
    • 100 $0.4909
    • 1000 $0.4439
    • 10000 $0.4439
    		Buy Now

    Renesas Electronics Corporation 2SK3000ZY(TL-E)

    Trans MOSFET N-CH Si 40V 1A 3-Pin MPAK T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip1Stop 2SK3000ZY(TL-E) 7,100
    • 1 -
    • 10 -
    • 100 $2.03
    • 1000 $1.64
    • 10000 $1.51
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    2SK300 Datasheets (26)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK300 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SK300 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SK300 Unknown FET Data Book Scan PDF
    2SK300 Sony Scan PDF
    2SK3000 Hitachi Semiconductor Silicon N Channel MOS FET Low Frequency Power Switching Original PDF
    2SK3000 Renesas Technology Silicon N Channel MOS FET Low Frequency Power Switching Original PDF
    2SK3000 Renesas Technology Silicon N Channel MOS FET Low Frequency Power Switching Original PDF
    2SK3000 Sanyo Semiconductor Very High Frequency Transistors / Amplifier Transistors Scan PDF
    2SK3001 Hitachi Semiconductor Silicon NPN Triple Diffused Original PDF
    2SK3002 Sanken Electric TRANS MOSFET N-CH 200V 8A 3TO-220F Original PDF
    2SK3002 Sanken Electric N-Channel MOSFET Original PDF
    2SK3002 Sanken Electric MOSFET Selection Guide Original PDF
    2SK3003 Sanken Electric External dimensions 1 Original PDF
    2SK3003 Sanken Electric MOSFET Selection Guide Original PDF
    2SK3003 Sanken Electric TRANS MOSFET N-CH 200V 18A 3TO-220F Original PDF
    2SK3003 Sanken Electric N-Channel MOSFET Original PDF
    2SK300-3 Unknown Scan PDF
    2SK3004 Sanken Electric TRANS MOSFET N-CH 250V 18A 3TO-220F Original PDF
    2SK3004 Sanken Electric N-Channel MOSFET Original PDF
    2SK3004 Sanken Electric MOSFET Selection Guide Original PDF

    2SK300 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Hitachi DSA0076

    Abstract: 2SK3000
    Text: 2SK3000 Silicon N Channel MOS FET Low Frequency Power Switching ADE-208-585A Z 2nd. Edition Mar. 2001 Features • Low on-resistance R DS(on) = 0. 25Ω typ. (VGS = 10 V, I D = 450 mA) • 4V gate drive devices. • Small package (MPAK) • Expansive drain to source surge power capability


    Original     		PDF 2SK3000 ADE-208-585A Hitachi DSA0076 2SK3000

    2SK3009

    Abstract: F8S60VX2
    Text: SHINDENGEN VX-2 Series Power MOSFET 2SK3009 F8S60VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : STO-220 Case E-pack (Unit : mm) 600V 8A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small.


    Original     		PDF 2SK3009 F8S60VX2) STO-220 00-200V 2SK3009 F8S60VX2

    2SK3000

    Abstract: DSA003726
    Text: 2SK3000 Silicon N Channel MOS FET Low Frequency Power Switching ADE-208-585 Z 1st. Edition December 1997 Features • Low on-resistance R DS(on) = 0. 25Ω typ. (V GS = 10 V, ID = 450 mA) • 4V gate drive devices. • Small package (MPAK) • Expansive drain to source surge power capability


    Original     		PDF 2SK3000 ADE-208-585 2SK3000 DSA003726

    2SK3004

    Abstract: FM20
    Text: 2SK3004 External dimensions 1 . FM20 Absolute Maximum Ratings Electrical Characteristics Ta = 25ºC Symbol Ratings Unit Symbol VDSS 250 V V(BR) DSS VGSS ±20 V ID ±18 A ±72 35 (Tc = 25ºC) (Ta = 25ºC) Ratings typ min 250 Unit max I GSS V I D = 100µA, VGS = 0V


    Original     		PDF 2SK3004 2SK3004 FM20

    2SK3004

    Abstract: FM20
    Text: 2SK3004 External dimensions 1 . FM20 Absolute Maximum Ratings Electrical Characteristics Ta = 25ºC Symbol Ratings Unit Symbol VDSS 250 V V(BR) DSS VGSS ±20 V ID ±18 A ±72 35 (Tc = 25ºC) (Ta = 25ºC) Ratings typ min 250 Unit max I GSS V I D = 100µA, VGS = 0V


    Original     		PDF 2SK3004 FM100 2SK3004 FM20

    2SK3001

    Abstract: Hitachi DSA00297
    Text: 2SK3001 GaAs HEMT Low Noise Amplifier ADE-208-597 Z 1st. Edition December 1997 Features • Excellent low noise characteristics. Fmin = 0.8 dB typ. (3 V, 5 mA, 0.9 GHz) • High associated gain. Ga = 18 dB typ. (3 V, 5 mA, 0.9 GHz) • Small package. (CMPAK-4)


    Original     		PDF 2SK3001 ADE-208-597 2SK3001 Hitachi DSA00297

    2SK3003

    Abstract: 2SK3003 equivalent FM20
    Text: 2SK3003 Absolute Maximum Ratings External dimensions 1 . FM20 Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 200 V V(BR) DSS VGSS ±20 V ID ±18 A ±72 35 (Tc = 25ºC) min 200 Ratings typ I GSS I DSS (Ta = 25ºC) max Unit V I D = 100µA, VGS = 0V


    Original     		PDF 2SK3003 FM100 2SK3003 2SK3003 equivalent FM20

    2SK3002

    Abstract: FM20
    Text: 2SK3002 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 200 V V (BR)DSS VGSS ±20 V ID ±8 A ±32 30 (Tc = 25ºC) min 200 Ratings typ I GSS I DSS (Ta = 25ºC) max Unit V I D = 100µA, VGS = 0V nA VGS = ±20V


    Original     		PDF 2SK3002 FM100 2SK3002 FM20

    2SK30

    Abstract: 2SK3009 150-C84 F8S60VX2
    Text: SHINDENGEN VX-2 Series Power MOSFET 2SK3009 F8S60VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : STO-220 (Unit : mm) 600V 8A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.


    Original     		PDF 2SK3009 F8S60VX2) STO-220 00-200V 2SK30 2SK3009 150-C84 F8S60VX2

    2SK3003 equivalent

    Abstract: 2SK3003 FM20
    Text: 2SK3003 Absolute Maximum Ratings External dimensions 1 . FM20 Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 200 V V(BR) DSS VGSS ±20 V ID ±18 A ±72 35 (Tc = 25ºC) min 200 Ratings typ I GSS I DSS (Ta = 25ºC) max Unit V I D = 100µA, VGS = 0V


    Original     		PDF 2SK3003 100mA 2SK3003 equivalent 2SK3003 FM20

    2SK3002

    Abstract: FM20
    Text: 2SK3002 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 200 V V (BR)DSS VGSS ±20 V ID ±8 A ±32 30 (Tc = 25ºC) min 200 Ratings typ I GSS I DSS (Ta = 25ºC) max Unit V I D = 100µA, VGS = 0V nA VGS = ±20V


    Original     		PDF 2SK3002 100mA 2SK3002 FM20

    2SK3000

    Abstract: No abstract text available
    Text: 2SK3000 Silicon N Channel MOS FET Low Frequency Power Switching REJ03G0379-0300Z Previous ADE-208-585A (Z Rev.3.00 Jun.15.2004 Features • Low on-resistance RDS(on) = 0.16 Ω typ. (VGS = 10 V, ID = 450 mA) • 4 V gate drive devices. • Small package (MPAK)


    Original     		PDF 2SK3000 REJ03G0379-0300Z ADE-208-585A 2SK3000

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 2SK3000 R07DS1134EJ0400 Rev.4.00 Jan 10, 2014 Silicon N Channel MOS FET Low Frequency Power Switching Features • Low on-resistance RDS on = 0.16 Ω typ. (VGS = 10 V, ID = 450 mA) • 4 V gate drive devices. • Small package (MPAK) • Expansive drain to source surge power capability


    Original     		PDF 2SK3000 R07DS1134EJ0400

    2SK3009

    Abstract: No abstract text available
    Text: SHINDENGEN VX-2 Series Power MOSFET 2SK3009 F8S60VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : STO-220 Case E-pack (Unit : mm) 600V 8A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.


    Original     		PDF 2SK3009 F8S60VX2) STO-220 00-200V 2SK3009

    2SK245

    Abstract: 2SK270 2SK243 2sk205 2SK239A 2SK224 2SK214 2SK259H 2Sk226 2SK240
    Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch VDS min max 2SK201 2SK203 2SK205 2SK208 2SK209 2SK210 2SK211 2SK212 2SK213 2SK214 2SK215 2SK216 2SK217 2SK218 2SK219 2SK220H


    Original     		PDF 2SK201 2SK203 2SK205 2SK208 2SK209 2SK210 2SK211 2SK212 2SK213 2SK214 2SK245 2SK270 2SK243 2sk205 2SK239A 2SK224 2SK214 2SK259H 2Sk226 2SK240

    2SK3235

    Abstract: 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053
    Text: HAT2038R/HAT2038RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-666C Z 4th. Edition Feb. 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting


    Original     		PDF HAT2038R/HAT2038RJ ADE-208-666C HAT2038R HAT2038RJ pdf\7420e HAT1044M HAT1053M 2SK3235 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053

    TRANSISTOR 187

    Abstract: fkv550 2sk2943 2SK1185 2SK3460 2SK2710a 2SK3724
    Text: 2-2 MOS FET Specifications List by Part Number Absolute Maximum Ratings Part Number VDSS V VGSS (V) ID (A) ID (pulse) (A) PD (W) IGSS EAS (mJ) (nA) max VTH IDSS Conditions VGS (V) (µA) min max Conditions VDS (V) (V) min max Conditions ID VDS (V) (µA) −60


    Original     		PDF 2SJ424 2SJ425 2SK1177 2SK1179 2SK1180 2SK1181 2SK1183 2SK1184 2SK1185 2SK1186 TRANSISTOR 187 fkv550 2sk2943 2SK3460 2SK2710a 2SK3724

    2sk 4207

    Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
    Text: CONTENTS Index . 5 General Information . 9


    Original     		PDF D-85622 2sk 4207 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent

    dc iris driver

    Abstract: CXA1310AQ dc iris drive cont QFP-32P-L01 2SC3355 2SK152 2SK300 32PIN PQFP32 sony linear ccd
    Text: CXA1310AQ Single Chip Processing for CCD Monochrome Camera Description The CXA1310AQ is designed to perform the basic signal processing in CCD monochrome cameras with a single chip. This bipolar lC is most suitable for compact usage and low power consumption.


    Original     		PDF CXA1310AQ CXA1310AQ 32PIN QFP-32P-L01 P-QFP32-7x7-0 dc iris driver dc iris drive cont QFP-32P-L01 2SC3355 2SK152 2SK300 PQFP32 sony linear ccd

    c4468 power transistor equivalent

    Abstract: c5287 equivalent transistor c4381 power transistor equivalent SLA5096 transistor c5287 circuit diagram sla5212 B1560 equivalent c4131 equivalent transistor C4300 transistor pin out c3856
    Text: Transistors 2 ○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○ Ordering Information & Standard Packing Quantities . 154 Application Note . 156


    Original     		PDF SLA15Pin) c4468 power transistor equivalent c5287 equivalent transistor c4381 power transistor equivalent SLA5096 transistor c5287 circuit diagram sla5212 B1560 equivalent c4131 equivalent transistor C4300 transistor pin out c3856

    2SK300

    Abstract: No abstract text available
    Text: SONY CORP/COM PON ENT PROPS 2SK300 • 7^ 2 2 SONY* Silicon N-Channel Junction FET . " — Description Making the best of Epitaxy and Pattern latest technology, 2SK300 accomplishes so far unattainable levels of performance. Usage with head amplifiers for video cameras and the


    OCR Scan     		PDF D0Q3071 2SK300 2SK300 00G307b T-29-25

    2SK300

    Abstract: VCO 100mhz
    Text: 2SK300 SONY ÿt>iy3>F E T ec n e -tä H B 2 S K 3 0 0 « * « t< D X e- 9 ♦ V 4 a W t '< 9 - -y * t t : mm a ft * * « L T . « * « Ü T d ^ ô » o f:« v v f tiiÉ i S ttû ‘« ^ n i L fz. t -r*»*ÿ, VTR^O' v- , K T yrtCÂttflt-Çr^ a i t * . « §


    OCR Scan     		PDF 2SK300 2SK300UÃ U-232 Ta-25* 100MHz I0-10mA 2SK300 VCO 100mhz

    2SK300

    Abstract: E90910
    Text: 2SK300 SONY Silicon N-Channel Junction FET D escrip tio n Making the best of Epitaxy and Pattern latest technology, 2SK300 accomplishes so far unattainable levels of performance. Usage with head amplifiers for video cameras and the like, ensures the highest efficiency.


    OCR Scan     		PDF 2SK300 2SK300 E90910

    2SK613

    Abstract: G8TE 2SK613-4 2SK613-2 2SK613-3 2SK300 yr yf 2SK300U 2SK13
    Text: 2SK300 SO NY ÿt>iy3 > FET ec ne-täH B 2 S K 3 0 0 « * « t< D X e- « L T . 9 ♦ V 4 a W t '< 9 - -y * t t : mm a ft * * « * « Ü T d ^ ô » o f : « v v f t i i É i S t t û ‘« ^ n i L fz. t - r * » * ÿ , V T R ^O 'v -, K T yrtC Â ttflt-Ç r^


    OCR Scan     		PDF 2SK300 2SK300UÃ U-232 Ta-25* 2SK613-4 100MHx 100MHz 2SK613 G8TE 2SK613-2 2SK613-3 2SK300 yr yf 2SK300U 2SK13