diode BB102
Abstract: RF TRANSISTOR 10GHZ low noise Tv tuner Diagram LG RF VCO 9GHZ 10GHZ Transistor GaAs FET Low Noise NF 1.6dB 2SC4784F ultra high frequency FETs or transistors A08 smd transistor lg tv electronic diagram SMD TRANSISTOR fet
Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products December, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,
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ADE-A08-003G
diode BB102
RF TRANSISTOR 10GHZ low noise
Tv tuner Diagram LG RF
VCO 9GHZ 10GHZ
Transistor GaAs FET Low Noise NF 1.6dB
2SC4784F
ultra high frequency FETs or transistors
A08 smd transistor
lg tv electronic diagram
SMD TRANSISTOR fet
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Untitled
Abstract: No abstract text available
Text: 2SK2144 Silicon N Channel MOS FET REJ03G1001-0200 Previous: ADE-208-1349 Rev.2.00 Sep 07,2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for switching regulator, DC-DC converter
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2SK2144
REJ03G1001-0200
ADE-208-1349)
PRSS0003AE-A
O-220Câ
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6679gi
Abstract: AP6679GI
Text: AP6679GI RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Single Drive Requirement ▼ Lower On-resistance G BVDSS -30V RDS ON 9mΩ ID -48A S Description Advanced Power MOSFETs from APEC provide the
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AP6679GI
O-220CFM
O-220CFM
6679GI
6679gi
AP6679GI
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TO-220CFM
Abstract: TO220CFM
Text: 富鼎先進電子股份有限公司 ADVANCED POWER ELECTRONICS CORP. 產 品 尺 寸 圖 Package Outline : TO-220CFM E A Millimeters SYMBOLS c2 φ L4 MIN NOM MAX A 4.30 4.60 4.90 A1 2.30 2.65 3.00 b b1 c c2 0.50 0.70 0.90 0.95 1.20 1.50 0.45 0.65 0.80 2.30
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O-220CFM
QWQAD-7701
TO-220CFM
TO220CFM
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AP05FN50I
Abstract: TO220C
Text: AP05FN50I RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Fast trr Performance D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G BVDSS 500V RDS ON 1.6Ω ID 4.5A S Description AP05FN50 provide high blocking voltage to overcome voltage surge
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AP05FN50I
AP05FN50
O-220CFM
O-220CFM
05FN50I
AP05FN50I
TO220C
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04n70bi
Abstract: 04N70B 04N70 TO220CFM AP04N70BI-H TO-220CFM
Text: AP04N70BI-H RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 700V RDS ON 2.4Ω ID G 4A S Description AP04N70 series are specially designed as main switching devices for
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AP04N70BI-H
AP04N70
265VAC
O-220CFM
O-220CFM
04N70BI
04n70bi
04N70B
04N70
TO220CFM
AP04N70BI-H
TO-220CFM
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70t03g
Abstract: 70t03 70T03GI diode marking 33a on semiconductor marking 33a on semiconductor
Text: AP70T03GI RoHS-compliant Product Advanced Power Electronics Corp. ▼ Fast Switching Performance N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Single Drive Requirement ▼ Full Isolation Package BVDSS 30V RDS ON 9mΩ ID 60A G S Description Advanced Power MOSFETs from APEC provide the designer with
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AP70T03GI
O-220CFM
O-220CFM
70T03GI
70t03g
70t03
70T03GI
diode marking 33a on semiconductor
marking 33a on semiconductor
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a 2763i
Abstract: 2763I ap2763I ap2763 AP2763I-A AP2763IA apec TO220C A/fet 2763i
Text: AP2763I-A RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Isolation Full Package BVDSS 750V RDS ON 1.45Ω ID ▼ Fast Switching Characteristics 8.0A G S Description AP2763 series are specially designed as main switching devices for
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AP2763I-A
AP2763
265VAC
O-220CFM
O-220CFM
2763I
a 2763i
2763I
ap2763I
AP2763I-A
AP2763IA
apec
TO220C
A/fet 2763i
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AP3989I
Abstract: TO220CFM
Text: AP3989I RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS 600V RDS ON 0.75Ω ID G 9A S Description Advanced Power MOSFETs from APEC provide the designer with the best
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AP3989I
O-220CFM
O-220CFM
3989I
AP3989I
TO220CFM
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AP04N60
Abstract: AP04N60I
Text: AP04N60I RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 600V RDS ON 2.35Ω ID 4A G S Description G AP04N60 series are specially designed as main switching devices for
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AP04N60I
AP04N60
265VAC
O-220CFM
100us
100ms
AP04N60I
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Untitled
Abstract: No abstract text available
Text: SSM2761F,I N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Repetitive avalanche rated BV D DSS 600V Fast switching R DS ON 1.0Ω Simple drive requirement I D 10A S TO-220FM(F) S TO-220CFM(I) G S Description The SSM2761 is specially designed as a main switching device
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SSM2761F
O-220FM
O-220CFM
SSM2761
265VAC
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dc-dc converter hitachi
Abstract: HITACHI DIODE 2SK1404 2SK2118 DSA003639
Text: 2SK2118 Silicon N-Channel MOS FET ADE-208-1348 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator, DC-DC converter,Motor Control
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2SK2118
ADE-208-1348
O-220CFM
dc-dc converter hitachi
HITACHI DIODE
2SK1404
2SK2118
DSA003639
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2SJ545
Abstract: DSA003643 Hitachi 2SJ
Text: 2SJ545 Silicon P Channel MOS FET High Speed Power Switching ADE-208-643A Z 2nd. Edition Jul. 1998 Features • Low on-resistance R DS(on) = 0.11 Ω typ. • Low drive current • 4 V gete drive devices • High speed switching Outline TO–220CFM D G 1 2
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2SJ545
ADE-208-643A
220CFM
2SJ545
DSA003643
Hitachi 2SJ
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2SK1155
Abstract: 2SK1156 2SK2114 2SK2115 DSA003639
Text: 2SK2114, 2SK2115 Silicon N-Channel MOS FET ADE-208-1346 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator
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2SK2114,
2SK2115
ADE-208-1346
O-220CFM
2SK2114
2SK1155
2SK1156
2SK2114
2SK2115
DSA003639
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Untitled
Abstract: No abstract text available
Text: AP30T10GI-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower On-resistance ▼ RoHS Compliant & Halogen-Free BVDSS 100V RDS ON 55mΩ ID G 16A S Description Advanced Power MOSFETs from APEC provide the designer with the
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AP30T10GI-HF
O-220CFM
100us
100ms
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2sj172
Abstract: Hitachi 2SJ Hitachi DSA001651
Text: 2SJ443 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V Gate drive can be driven from 5 V source Suitable for Switching regulator, DC - DC converter
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2SJ443
O-220CFM
D-85622
2sj172
Hitachi 2SJ
Hitachi DSA001651
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Hitachi DSA001651
Abstract: No abstract text available
Text: 2SJ323 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter
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2SJ323
O-220CFM
Hitachi DSA001651
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Hitachi DSA001651
Abstract: No abstract text available
Text: 2SK2591 Silicon N-Channel MOS FET Preliminary November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter
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2SK2591
O-220CFM
Hitachi DSA001651
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2SK2206
Abstract: Hitachi DSA001652
Text: 2SK2206 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance Low drive current High speed switching 4 V gate drive device can be driven from 5 V source Suitable for DC-DC converter, Motor control
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2SK2206
O-220CFM
D-85622
2SK2206
Hitachi DSA001652
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Hitachi DSA001651
Abstract: No abstract text available
Text: 2SK2426 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter. Outline TO-220CFM
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2SK2426
O-220CFM
D-85622
Hitachi DSA001651
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Hitachi DSA001651
Abstract: No abstract text available
Text: 2SK2423 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter. Outline TO-220CFM
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2SK2423
O-220CFM
D-85622
Hitachi DSA001651
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2SK2390
Abstract: Hitachi DSA001651
Text: 2SK2390 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter
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2SK2390
O-220CFM
D-85622
2SK2390
Hitachi DSA001651
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2sj322
Abstract: Hitachi DSA001651
Text: 2SJ322 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter
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2SJ322
O-220CFM
2sj322
Hitachi DSA001651
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Untitled
Abstract: No abstract text available
Text: 2SK2934 Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-557B Z 3rd. Edition June 1, 1998 Features • Low on-resistance Rds =0.026 Q. typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline 2SK2934
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2SK2934
ADE-208-557B
D-85622
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