2SK1104
Abstract: 2SJ0164 2SJ164
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0164 (2SJ164) Silicon P-channel junction FET For switching circuits Complementary to 2SK1104 • Package Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b
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2002/95/EC)
2SJ0164
2SJ164)
2SK1104
2SK1104
2SJ0164
2SJ164
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2SK1104
Abstract: 2SJ164 SC-72
Text: Silicon Junction FETs Small Signal 2SK1104 Silicon N-Channel Junction FET For switching Complementary to 2SJ164 unit: mm 3.0±0.2 4.0±0.2 • Features 15.6±0.5 ● Low ON-resistance ● Low-noise characteristics Ratings Unit Gate to Drain voltage VGDS
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2SK1104
2SJ164
SC-72
2SK1104
2SJ164
SC-72
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2SK1104
Abstract: 2SJ164
Text: Silicon Junction FETs Small Signal 2SK1104 Silicon N-Channel Junction FET For switching Complementary to 2SJ164 unit: mm 2.0±0.2 (0.8) 3.0±0.2 4.0±0.2 ● Low ON-resistance ● Low-noise characteristics 7.6 • Features 15.6±0.5 ■ Absolute Maximum Ratings (Ta = 25°C)
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2SK1104
2SJ164
2SK1104
2SJ164
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Untitled
Abstract: No abstract text available
Text: Silicon Junction FETs Small Signal 2SK1104 Silicon N-Channel Junction FET For switching Complementary to 2SJ164 unit: mm 2.0±0.2 (0.8) 3.0±0.2 M Di ain sc te on na tin nc ue e/ d 4.0±0.2 ● Low ON-resistance ● Low-noise characteristics 7.6 • Features
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2SK1104
2SJ164
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2SK1104
Abstract: 2SJ164 2sj16
Text: Silicon Junction FETs Small Signal 2SK1104 Silicon N-Channel Junction FET For switching Complementary to 2SJ164 M Di ain sc te on na tin nc ue e/ d unit: mm 2.0±0.2 ● Low ON-resistance ● Low-noise characteristics 15.6±0.5 • Absolute Maximum Ratings (Ta = 25°C)
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2SK1104
2SJ164
2SK1104
2SJ164
2sj16
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2SK1104
Abstract: 2SJ0164 2SJ164
Text: Silicon Junction FETs Small Signal 2SJ0164 (2SJ164) Silicon P-Channel Junction FET For switching Complementary to 2SK1104 unit: mm 4.0±0.2 (0.8) 3.0±0.2 2.0±0.2 ● Low ON-resistance ● Low-noise characteristics 7.6 • Features 15.6±0.5 ■ Absolute Maximum Ratings (Ta = 25°C)
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2SJ0164
2SJ164)
2SK1104
2SK1104
2SJ0164
2SJ164
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PDF
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2SJ0164
Abstract: 2SJ164 2SK1104
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0164 (2SJ164) Silicon P-channel junction FET For switching circuits Complementary to 2SK1104 • Package Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b
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Original
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2002/95/EC)
2SJ0164
2SJ164)
2SK1104
2SJ0164
2SJ164
2SK1104
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PDF
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2SK1104
Abstract: 2SJ0164 2SJ164
Text: Silicon Junction FETs Small Signal 2SJ0164 (2SJ164) Silicon P-channel junction FET Unit: mm 2.0±0.2 4.0±0.2 (0.8) 3.0±0.2 For switching circuits Complementary to 2SK1104 (0.8) 0.75 max. • Features 15.6±0.5 • Low ON resistance • Low-noise characteristics
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2SJ0164
2SJ164)
2SK1104
2SK1104
2SJ0164
2SJ164
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SK1104 Silicon Junction FETs Small Signal 2SK1104 Silicon N-Channel Junction Unit : mm For switching Complementary with 2SJ164 3.0±0.2 4.0±0.2 Low-noise characteristics marking 1 2 3 2.0±0.2 ● 0.7±0.1 Low ON-resistance +0.2 0.45–0.1 ● 15.6±0.5
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2SK1104
2SJ164
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0164 (2SJ164) Silicon P-channel junction FET For switching circuits Complementary to 2SK1104 • Package ■ Features • Code NS-A1 • Pin Name • Low ON resistance
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2002/95/EC)
2SJ0164
2SJ164)
2SK1104
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Junction-FET
Abstract: 2SJ164 2SK1104 SC-72
Text: Silicon Junction FETs Small Signal 2SJ164 Silicon P-Channel Junction FET For switching Complementary to 2SK1104 unit: mm 3.0±0.2 4.0±0.2 • Features 15.6±0.5 ● Low ON-resistance ● Low-noise characteristics Ratings Unit Gate to Drain voltage VGDS
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2SJ164
2SK1104
SC-72
Junction-FET
2SJ164
2SK1104
SC-72
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2SJ0164
Abstract: 2SJ164 2SK1104
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0164 (2SJ164) Silicon P-channel junction FET M Di ain sc te on na tin nc ue e/ d For switching circuits Complementary to 2SK1104 ue pl d in an c se ed lud
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2002/95/EC)
2SJ0164
2SJ164)
2SK1104
2SJ0164
2SJ164
2SK1104
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2SK1104
Abstract: 2SJ164 SC-72 2SK110
Text: Silicon Junction FETs Small Signal 2SK1104 Silicon N-Channel Junction FET For switching Complementary to 2SJ164 unit: mm 3.0±0.2 4.0±0.2 • Features 15.6±0.5 ● Low ON-resistance ● Low-noise characteristics Ratings Unit Gate to Drain voltage VGDS
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2SK1104
2SJ164
SC-72
2SK1104
2SJ164
SC-72
2SK110
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2SK1104
Abstract: 2SJ0164 2SJ164 SC-72
Text: Silicon Junction FETs Small Signal 2SJ0164 (2SJ164) Silicon P-Channel Junction FET For switching Complementary to 2SK1104 unit: mm 3.0±0.2 4.0±0.2 • Features 15.6±0.5 ● Low ON-resistance ● Low-noise characteristics Ratings Unit Gate to Drain voltage
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2SJ0164
2SJ164)
2SK1104
SC-72
2SK1104
2SJ0164
2SJ164
SC-72
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PDF
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Untitled
Abstract: No abstract text available
Text: Silicon Junction FETs Small Signal 2SK1104 Silicon N-Channel Junction FET For switching Complementary to 2SJ164 unit: mm 4.0±0.2 (0.8) 3.0±0.2 2.0±0.2 ● Low ON-resistance ● Low-noise characteristics 7.6 M Di ain sc te on na tin nc ue e/ d • Features
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2SK1104
2SJ164
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0164 (2SJ164) Silicon P-channel junction FET M Di ain sc te on na tin nc ue e/ d For switching circuits Complementary to 2SK1104 • Package ■ Features
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2002/95/EC)
2SJ0164
2SJ164)
2SK1104
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2sj111
Abstract: 2SJ131 2sj110 2SJ112 2sj155 2SJ124 transistor 2sj162 2SJ109 2SJ113 2SJ122
Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) ID Pd/Pch Tj/Tch min 2SJ101 2SJ102 2SJ103 2SJ104 2SJ105 2SJ106 2SJ107 2SJ108 2SJ109 2SJ110 2SJ111 2SJ112 2SJ113 2SJ114 2SJ115 2SJ116 2SJ117 2SJ118
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2SJ101
2SJ102
2SJ103
2SJ104
2SJ105
2SJ106
2SJ107
2SJ108
2SJ109
2SJ110
2sj111
2SJ131
2sj110
2SJ112
2sj155
2SJ124
transistor 2sj162
2SJ109
2SJ113
2SJ122
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2SK3585
Abstract: Infrared-Sensor 2SK3578 2SK3584 2sk0301 2SK3583 PUB4701 2SK1104 2SK1860 2SK3585 equivalent
Text: FETs, IPD, IGBTs, GaAs MMICs • Power Transistor Arrays F-MOS FETs Application Part No. Non-contact solenoid drive. Motor drive. Control equipment switching equipment. ✽: Ta=25 °C PUB4753 (PU7457) PUB4701 PUB4702 Absolute Maximum Ratings (TC = 25 °C)
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PUB4753
PU7457)
PUB4701
PUB4702
450/600o
380/680o
SIP10-A1
2SK0301
2SK663)
2SK301)
2SK3585
Infrared-Sensor
2SK3578
2SK3584
2SK3583
PUB4701
2SK1104
2SK1860
2SK3585 equivalent
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2SK1216
Abstract: 3SK139 2SJ364 FETs Field Effect Transistors 3SK268 3SK269 3SK192 2SK1104 2SK374 3SK286
Text: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta =25 “CÍ Package (No. Application General-use low frequency amplifier SS Mini Type S Mini Type (D1) (D5) 2SJ0385 Mini Type (D10) 2SK198 2SK374 2SK123 Capacitor microphone APreliminary
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OCR Scan
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2SJ0385
2SJ364
2SK1103
2SJ163
2SK1104
2SJ164
2SK662
2SK663
2SK198
2SK374
2SK1216
3SK139
FETs Field Effect Transistors
3SK268
3SK269
3SK192
2SK374
3SK286
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3866S
Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Text: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series
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OCR Scan
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1020G
N12861
N12B62
MN1381
MN13811
MN13821
15P0802
15P5402
58851A
70803A
3866S
transistor a999
bs 7818 -1995
transistor tt 2206
A999 transistor
TT 2206 transistor
a1535A
8340UAS
transistor 3866S
2SD 4515
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2SK620
Abstract: 3SK268 3SK269 2SK1104 3SK286 CAMERA MOS 2SJ0385 2SJ163 2SJ164 2SJ364
Text: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta=25“C Package (No.) Application Mini Type (D10) SS Mini Type S Mini Type (D 1) General-use low frequency amplifier (D 5) New S Type (D39) 2 SKIIO 3 2SJ0385 2SJ364 2SK662 2SK663
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OCR Scan
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2SJ0385
2SJ364
2SK1103
2SJ163
2SK1104
2SJ164
2SK662
2SK663
2SK198
2SK374
2SK620
3SK268
3SK269
3SK286
CAMERA MOS
2SJ164
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PDF
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Untitled
Abstract: No abstract text available
Text: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta Package (No. Application (D1) General-use low frequency amplifier 2SJ0385 General-use Capacitor microphone Video camera pre-amp. Infrared sensor A2SK2380 APrelim inary Mini Type
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OCR Scan
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2SJ0385
A2SK2380
2SK1103
2SJ364
2SJ163
2SK662
2SK198
2SK663
2SK374
2SK123
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PDF
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3SK192
Abstract: 2SK651
Text: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Electrical Characteristics Ta =25 °C (Ta = 2 5 “C) Package (No.) Application SS Mini Type S Mini Type (D5) (D1) Mini Type (D12) New S Type (D34) TO-92 (D46) V dso * V gds (V )
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OCR Scan
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2SK2380
2SJ0385
2SJ364
2SK662
2SK663
2SK1103
2SJ163
2SK198
2SK374
2SK123
3SK192
2SK651
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PDF
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ic501
Abstract: RVD1SS133TA RVSGP2S24BC XLJ93LC46A 2SD2374PQAU MA165TA KSD471ACYGTA an7357fb AN7356SC-E2 mtzj6r2bta
Text: O RDER NO. AD9510251S5 A2 Service Manual Cassette Deck Dolby NR-Equipped Stereo Double Cassette Deck RS-TR474 Colour D O L B Y B «C N R H X P R O <K .Black Type Area Suffix for Model No. * Dolby noise reduction and HX Pro headroom extension m anufactured under license from Dolby Laboratories
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OCR Scan
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AD9510251S5
RS-TR474
RS-TR474,
AD9401007C5.
No111TX
MA112TX
MA8056MTX
MA152WATX
LN28RPX
ic501
RVD1SS133TA
RVSGP2S24BC
XLJ93LC46A
2SD2374PQAU
MA165TA
KSD471ACYGTA
an7357fb
AN7356SC-E2
mtzj6r2bta
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PDF
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