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    Panasonic Electronic Components 2SD14850P

    TRANS NPN 100V 5A TOP-3F
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    2SD1485 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD1485 Panasonic NPN Transistor Original PDF
    2SD1485 Panasonic Silicon NPN triple diffusion planar type Original PDF
    2SD1485 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1485 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1485 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1485 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1485 Unknown Cross Reference Datasheet Scan PDF
    2SD14850P Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 100VCEO 5A TOP-3F Original PDF
    2SD1485P Panasonic Silicon PNP Triple Diffusion Planar Type Power Transistor Original PDF
    2SD1485Q Panasonic Silicon PNP Triple Diffusion Planar Type Power Transistor Original PDF

    2SD1485 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB1054 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SD1485 5.0±0.2 φ 3.2±0.1 15.0±0.2 • Excellent current IC characteristics of forward current transfer ratio hFE vs. collector • Wide area of safe operation ASO


    Original     		PDF 2SB1054 2SD1485

    2SB1054

    Abstract: 2SD1485
    Text: Power Transistors 2SB1054 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1485 Unit: mm 5.0±0.2 0.7 15.0±0.3 (3.2) 11.0±0.2 15.0±0.2 φ 3.2±0.1 (3.5) Solder Dip 16.2±0.5 • Excellent collector current IC characteristics of forward current


    Original     		PDF 2SB1054 2SD1485 2SB1054 2SD1485

    2SB1054

    Abstract: 2SD1485
    Text: Power Transistors 2SB1054 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SD1485 5.0±0.2 φ 3.2±0.1 15.0±0.2 • Excellent current IC characteristics of forward current transfer ratio hFE vs. collector • Wide area of safe operation ASO


    Original     		PDF 2SB1054 2SD1485 2SB1054 2SD1485

    2SB1054

    Abstract: 2SD1485
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1485 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1054 5.0±0.2 (0.7) 15.0±0.3 (3.2) 15.0±0.2 φ 3.2±0.1 (3.5) Solder Dip


    Original     		PDF 2002/95/EC) 2SD1485 2SB1054 2SB1054 2SD1485

    2SB1054

    Abstract: 2SD1485
    Text: Power Transistors 2SD1485 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1054 Unit: mm ● ● • Absolute Maximum Ratings TC=25˚C Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage


    Original     		PDF 2SD1485 2SB1054 2SB1054 2SD1485

    2SB1054

    Abstract: 2SD1485
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1485 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1054 5.0±0.2 (0.7) 15.0±0.3 (3.2) 15.0±0.2 φ 3.2±0.1 (3.5) Solder Dip


    Original     		PDF 2002/95/EC) 2SD1485 2SB1054 2SB1054 2SD1485

    2SB1054

    Abstract: 2SD1485
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1054 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1485 Unit: mm 5.0±0.2 M Di ain sc te on na tin nc ue e/ d (0.7) 15.0±0.3 15.0±0.2


    Original     		PDF 2002/95/EC) 2SB1054 2SD1485 2SB1054 2SD1485

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1054 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1485 Unit: mm 5.0±0.2 M Di ain sc te on na tin nc ue e/ d (0.7) 15.0±0.3 15.0±0.2


    Original     		PDF 2002/95/EC) 2SB1054 2SD1485

    Untitled

    Abstract: No abstract text available
    Text: 2SD1485 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)5 Absolute Max. Power Diss. (W)3 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V)2 @I(C) (A) (Test Condition)3


    Original     		PDF 2SD1485 Freq20MÃ

    2SB1054

    Abstract: 2SD1485
    Text: Power Transistors 2SB1054 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1485 Unit: mm 5.0±0.2 0.7 15.0±0.3 (3.2) 11.0±0.2 15.0±0.2 (3.5) Solder Dip 16.2±0.5 φ 3.2±0.1 2.0±0.2 1.1±0.1 • Absolute Maximum Ratings TC = 25°C


    Original     		PDF 2SB1054 2SD1485 SC-92 2SB1054 2SD1485

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1485 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1054 5.0±0.2 (3.2) 11.0±0.2 15.0±0.2 φ 3.2±0.1 (3.5) Solder Dip


    Original     		PDF 2002/95/EC) 2SD1485 2SB1054

    8A60

    Abstract: 2SB1054 2SD1485
    Text: Power Transistors 2SD1485 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1054 5.0±0.2 3.2 11.0±0.2 15.0±0.2 φ 3.2±0.1 (3.5) Solder Dip • Excellent collector current IC characteristics of forward current


    Original     		PDF 2SD1485 2SB1054 8A60 2SB1054 2SD1485

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1485 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1054 5.0±0.2 (3.2) 11.0±0.2 15.0±0.2 φ 3.2±0.1 (3.5) Solder Dip


    Original     		PDF 2002/95/EC) 2SD1485 2SB1054

    2SB1054

    Abstract: 2SD1485
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1054 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -2.0V(Max)@IC= -3A ·Wide Area of Safe Operation ·Complement to Type 2SD1485 APPLICATIONS ·Designed for high power amplification.


    Original     		PDF 2SB1054 2SD1485 -100V; -20mA; 2SB1054 2SD1485

    2SB1054

    Abstract: 2SD1485
    Text: Power Transistors 2SB1054 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SD1485 5.0±0.2 φ 3.2±0.1 15.0±0.2 • Excellent current IC characteristics of forward current transfer ratio hFE vs. collector • Wide area of safe operation ASO


    Original     		PDF 2SB1054 2SD1485 2SB1054 2SD1485

    2SB1054

    Abstract: 2SD1485 2sB105 EMIC 2sd148
    Text: Inchange Semiconductor Product Specification 2SB1054 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1485 ・High transition frequency ・Wide area of safe operation APPLICATIONS ・For high power amplifier applications


    Original     		PDF 2SB1054 2SD1485 -20mA 2SB1054 2SD1485 2sB105 EMIC 2sd148

    2SB1054

    Abstract: 2SD1485
    Text: JMnic Product Specification 2SB1054 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1485 ・High transition frequency ・Wide area of safe operation APPLICATIONS ・For high power amplifier applications PINNING


    Original     		PDF 2SB1054 2SD1485 -100V; -20mA 2SB1054 2SD1485

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1485 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1054 5.0±0.2 (0.7) 15.0±0.3 (3.2) 21.0±0.5 16.2±0.5 1 Parameter


    Original     		PDF 2002/95/EC) 2SD1485 2SB1054

    2SB1054

    Abstract: 2SD1485
    Text: Power Transistors 2SD1485 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1054 Unit: mm ● ● • Absolute Maximum Ratings TC=25˚C Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage


    Original     		PDF 2SD1485 2SB1054 2SB1054 2SD1485

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    2SD1485

    Abstract: 2SB1054 10VX1A
    Text: P o w er T ra n s is to rs 2SD1485 2S D 1485 Silicon PNP Triple-Diffused Planar Type P a c k a g e D im e n s io n s H igh P o w e r A m p lifie r C o m p le m e n ta ry P a ir w ith 2 S B 1 0 5 4 U n it ! mm 5.2m ax. ’ z-3.2 15^5 m a x . o • F e a tu re s


    OCR Scan     		PDF 2SD1485 2SB1054 10VX0 10VX1A 100x100x2mm 2SD1485 2SB1054

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1485 2SD1485 Silicon PNP Triple-Diffused Planar Type • Package Dimensions High Power Amplifier Complementary Pair with 2SB1054 ■ Features • V ery good linearity of DC current gain hFE • Wide area of safety operation (ASO) • High transition frequency (ft)


    OCR Scan     		PDF 2SD1485 2SB1054 bT32flS2 Di485

    2SB1531

    Abstract: 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A
    Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use lc VcE(sat) (A) (V) Darlington High-hfE Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100 5 <2 3 300 140


    OCR Scan     		PDF 2SA1185 2SB1054/2SD1485 2SB1421 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SD1457 2SD1457A 2SC4535 2SD1641 2SB1531 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A