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    Balluff Inc BCC0FUL (ALTERNATE: BCC S4A5-0000-1A-010-VX0434-100)

    Connector/cable, Female M12, PVC, 10.00 m, Drag chain compatible | Balluff BCC0FUL
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    Balluff Inc BCC0FUK (ALTERNATE: BCC S4A5-0000-1A-010-VX0434-050)

    Connector/cable, Female M12, PVC, 5.00 m, Drag chain compatible | Balluff BCC0FUK
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    Balluff Inc BCC0FUN (ALTERNATE: BCC S4A5-0000-1A-010-VX0434-300)

    Connector/cable, Female M12, PVC, 30.00 m, Drag chain compatible | Balluff BCC0FUN
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    Balluff Inc BCC0FUP (ALTERNATE: BCC S4A5-0000-1A-010-VX0434-400)

    Connector/cable, Female M12, PVC, 40.00 m, Drag chain compatible | Balluff BCC0FUP
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    Balluff Inc BCC0FUM (ALTERNATE: BCC S4A5-0000-1A-010-VX0434-250)

    Connector/cable, Female M12, PVC, 25.00 m, Drag chain compatible | Balluff BCC0FUM
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    10VX0 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SB1299

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1299 Silicon PNP epitaxial planar type For power amplification 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)


    Original     		2002/95/EC) 2SB1299 2SB1299 PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB1317 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1975 Unit: mm 2.0 2.7±0.3 3.0±0.3 1.0±0.2 0.6±0.2 5.45±0.3 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −180


    Original     		2SB1317 2SD1975 PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB1054 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SD1485 5.0±0.2 φ 3.2±0.1 15.0±0.2 • Excellent current IC characteristics of forward current transfer ratio hFE vs. collector • Wide area of safe operation ASO


    Original     		2SB1054 2SD1485 PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB1254 Silicon PNP epitaxial planar type darlington Unit: mm For power amplification Complementary to 2SD1894 5.0±0.2 3.2 11.0±0.2 φ 3.2±0.1 15.0±0.2 (3.5) Solder Dip • Optimum for 60 W HiFi output • High forward current transfer ratio hFE


    Original     		2SB1254 2SD1894 PDF

    2sc3979

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC3979, 2SC3979A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching • Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage


    Original     		2002/95/EC) 2SC3979, 2SC3979A 2SC3979 2SC3979A PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB1255 Silicon PNP epitaxial planar type darlington Unit: mm For power amplification Complementary to 2SD1895 5.0±0.2 3.2 11.0±0.2 φ 3.2±0.1 15.0±0.2 (3.5) Solder Dip • Optimum for 90 W HiFi output • High forward current transfer ratio hFE


    Original     		2SB1255 2SD1895 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC3507 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 5.0±0.2 (0.7) 15.0±0.3 21.0±0.5 16.2±0.5 • Absolute Maximum Ratings TC = 25°C


    Original     		2002/95/EC) 2SC3507 PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD2250 Silicon NPN triple diffusion planar type darlington Unit: mm • Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector-base voltage Emitter open VCBO 160 V Collector-emitter voltage (Base open) VCEO 140 V Emitter-base voltage (Collector open)


    Original     		2SD2250 2SB1490 PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB1347 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2029 Unit: mm 2.0±0.3 3.0±0.3 Unit Collector-base voltage Emitter open VCBO −160 V Collector-emitter voltage (Base open) VCEO −160 V


    Original     		2SB1347 2SD2029 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC3979, 2SC3979A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching • Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage


    Original     		2002/95/EC) 2SC3979, 2SC3979A 2SC3979 2SC3979A PDF

    2SD1707

    Abstract: No abstract text available
    Text: Power Transistors 2SD1707 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1156 5.0±0.2 • Absolute Maximum Ratings TC = 25°C φ 3.2±0.1 15.0±0.2 • Low collector to emitter saturation voltage VCE sat • Satisfactory linearity of forward current transfer ratio hFE


    Original     		2SD1707 2SB1156 2SD1707 PDF

    2SD1705

    Abstract: 2SB1154 2sd170
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1705 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1154 5.0±0.2 (0.7) 15.0±0.3 (3.2) Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)


    Original     		2002/95/EC) 2SD1705 2SB1154 2SD1705 2SB1154 2sd170 PDF

    2SB1503

    Abstract: 2SD2276 2sb15
    Text: Power Transistors 2SD2276 Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1503 5.0±0.3 3.0 26.0±0.5 • Features ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open)


    Original     		2SD2276 2SB1503 2SB1503 2SD2276 2sb15 PDF

    2SB1154

    Abstract: 2SD1705
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1154 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1705 Unit: mm 5.0±0.2 M Di ain sc te on na tin nc ue e/ d (0.7) 15.0±0.3 (3.2) 11.0±0.2 • Features


    Original     		2002/95/EC) 2SB1154 2SD1705 SC-92 2SB1154 2SD1705 PDF

    2SC463

    Abstract: 2SC4638
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC4638 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 5.5±0.2 Collector-base voltage (Emitter open) Collector-emitter voltage (E-B short)


    Original     		2002/95/EC) 2SC4638 SC-67 O-220F-A1 2SC463 2SC4638 PDF

    2SC4960

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC4960 Silicon NPN triple diffusion planar type For power switching Unit: mm 5.0±0.2 (0.7) 15.0±0.3 Collector-base voltage (Emitter open) Collector-emitter voltage (E-B short)


    Original     		2002/95/EC) 2SC4960 SC-92 2SC4960 PDF

    2sc3743

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC3743 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 4.2±0.2 5.5±0.2 Collector-base voltage (Emitter open) Collector-emitter voltage (E-B short)


    Original     		2002/95/EC) 2SC3743 SC-67 O-220F-A1 2sc3743 PDF

    2SB1255

    Abstract: 2SD1895
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1255 Silicon PNP epitaxial planar type darlington Unit: mm For power amplification Complementary to 2SD1895 5.0±0.2 (0.7) 15.0±0.3 (3.2) 15.0±0.2 φ 3.2±0.1 (3.5) Solder Dip


    Original     		2002/95/EC) 2SB1255 2SD1895 2SB1255 2SD1895 PDF

    2SD1964

    Abstract: tf 130
    Text: Power Transistors 2SD1964 Silicon NPN epitaxial planar type Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO 130 V Collector-emitter voltage (Base open) VCEO 80 V Emitter-base voltage (Collector open)


    Original     		2SD1964 SC-67 O-220F-A1 2SD1964 tf 130 PDF

    2SC3979

    Abstract: 2SC3979A
    Text: Power Transistors 2SC3979, 2SC3979A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching • Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage Emitter open Symbol Rating Unit VCBO 900 V 2SC3979 2SC3979A


    Original     		2SC3979, 2SC3979A 2SC3979 2SC3979 2SC3979A PDF

    2SB1054

    Abstract: 2SD1485
    Text: Power Transistors 2SB1054 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1485 Unit: mm 5.0±0.2 0.7 15.0±0.3 (3.2) 11.0±0.2 15.0±0.2 φ 3.2±0.1 (3.5) Solder Dip 16.2±0.5 • Excellent collector current IC characteristics of forward current


    Original     		2SB1054 2SD1485 2SB1054 2SD1485 PDF

    2SC4960

    Abstract: No abstract text available
    Text: Power Transistors 2SC4960 Silicon NPN triple diffusion planar type For power switching Unit: mm 5.0±0.2 0.7 15.0±0.3 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 900 V Collector-emitter voltage (E-B short)


    Original     		2SC4960 2SC4960 PDF

    2SB1255

    Abstract: 2SD1895
    Text: Power Transistors 2SD1895 Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1255 15.0±0.2 φ 3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 1.1±0.1 5.45±0.3 • Absolute Maximum Ratings TC = 25°C 10.9±0.5 Parameter


    Original     		2SD1895 2SB1255 2SB1255 2SD1895 PDF

    2SD1705

    Abstract: 2SB1154
    Text: Power Transistors 2SD1705 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1154 5.0±0.2 • Absolute Maximum Ratings TC = 25°C 15.0±0.2 φ 3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 1.1±0.1 5.45±0.3 Parameter Symbol Rating Unit


    Original     		2SD1705 2SB1154 2SD1705 2SB1154 PDF