2SB1052
Abstract: 2SD1480 IC 4090
Text: Inchange Semiconductor Product Specification 2SB1052 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SD1480 ・Low collector saturation voltage APPLICATIONS ・For power amplifier applications PINNING PIN DESCRIPTION
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2SB1052
O-220Fa
2SD1480
2SB1052
2SD1480
IC 4090
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2SB1055
Abstract: 2SD1486
Text: JMnic Product Specification 2SB1055 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1486 ・High fT ・Satisfactory linearity of hFE ・Wide area of safe operation APPLICATIONS ・For high power amplifier applications
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2SB1055
2SD1486
-120V;
-20mA
2SB1055
2SD1486
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2SB1052
Abstract: 2SD1480
Text: SavantIC Semiconductor Product Specification 2SB1052 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Complement to type 2SD1480 ·Low collector saturation voltage APPLICATIONS ·For power amplifier applications PINNING PIN DESCRIPTION 1
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2SB1052
O-220Fa
2SD1480
2SB1052
2SD1480
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2SD1488
Abstract: 2SB1057
Text: SavantIC Semiconductor Product Specification 2SB1057 Silicon PNP Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SD1488 ·High fT ·Satisfactory linearity of hFE ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications
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2SB1057
2SD1488
-150V;
-20mA
2SD1488
2SB1057
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2SB1056
Abstract: 2SD1487
Text: SavantIC Semiconductor Product Specification 2SB1056 Silicon PNP Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SD1487 ·High fT ·Satisfactory linearity of hFE ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications
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2SB1056
2SD1487
-140V;
-20mA
2SB1056
2SD1487
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Untitled
Abstract: No abstract text available
Text: Transistors 2SB1050 Silicon PNP epitaxial planar type For low-frequency amplification Unit: mm 2.5±0.1 1.0 (1.0) (1.5) 4.5±0.1 2.0±0.2 R 0.9 R 0.7 3.5±0.1 (1.5) 4.1±0.2 • Absolute Maximum Ratings Ta = 25°C 2.4±0.2 1.0±0.1 d p lan inc ea se ed lud
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2SB1050
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SB1054 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SD1485 5.0±0.2 φ 3.2±0.1 15.0±0.2 • Excellent current IC characteristics of forward current transfer ratio hFE vs. collector • Wide area of safe operation ASO
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2SB1054
2SD1485
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD1480 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1052 10.0±0.2 0.7±0.1 Features 4.2±0.2 5.5±0.2 2.7±0.2 TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage
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2SD1480
2SB1052
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2SB1055
Abstract: 2SD1486
Text: Inchange Semiconductor Product Specification 2SB1055 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1486 ・High fT ・Satisfactory linearity of hFE ・Wide area of safe operation APPLICATIONS ・For high power amplifier applications
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2SB1055
2SD1486
2SB1055
2SD1486
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2SD1480
Abstract: 2SB1052
Text: Power Transistors 2SD1480 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1052 0.7±0.1 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage
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2SD1480
2SB1052
2SD1480
2SB1052
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2SB1050
Abstract: No abstract text available
Text: Transistor 2SB1050 Silicon PNP epitaxial planer type For low-frequency amplification Unit: mm 2.5±0.1 1.0 4.5±0.1 R 0.9 R 0.7 4.1±0.2 ● Low collector to emitter saturation voltage VCE(sat). Large collector current IC. M type package allowing easy automatic and manual insertion as
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2SB1050
2SB1050
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2SB1054
Abstract: 2SD1485
Text: Power Transistors 2SB1054 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1485 Unit: mm 5.0±0.2 0.7 15.0±0.3 (3.2) 11.0±0.2 15.0±0.2 φ 3.2±0.1 (3.5) Solder Dip 16.2±0.5 • Excellent collector current IC characteristics of forward current
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2SB1054
2SD1485
2SB1054
2SD1485
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2SB1054
Abstract: 2SD1485
Text: Power Transistors 2SB1054 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SD1485 5.0±0.2 φ 3.2±0.1 15.0±0.2 • Excellent current IC characteristics of forward current transfer ratio hFE vs. collector • Wide area of safe operation ASO
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2SB1054
2SD1485
2SB1054
2SD1485
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2SD1487
Abstract: 2SB1056
Text: JMnic Product Specification 2SB1056 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1487 ・High fT ・Satisfactory linearity of hFE ・Wide area of safe operation APPLICATIONS ・For high power amplifier applications
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2SB1056
2SD1487
-140V;
-20mA
2SD1487
2SB1056
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Untitled
Abstract: No abstract text available
Text: Transistors 2SB1050 Silicon PNP epitaxial planar type For low-frequency amplification Unit: mm 2.5±0.1 1.0 4.5±0.1 R 0.9 R 0.7 4.1±0.2 ● Low collector to emitter saturation voltage VCE(sat). Large collector current IC. M type package allowing easy automatic and manual insertion as
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2SB1050
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2SB1054
Abstract: 2SD1485
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1485 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1054 5.0±0.2 (0.7) 15.0±0.3 (3.2) 15.0±0.2 φ 3.2±0.1 (3.5) Solder Dip
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2002/95/EC)
2SD1485
2SB1054
2SB1054
2SD1485
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2SB1054
Abstract: 2SD1485
Text: Power Transistors 2SD1485 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1054 Unit: mm ● ● • Absolute Maximum Ratings TC=25˚C Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage
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2SD1485
2SB1054
2SB1054
2SD1485
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2SB1054
Abstract: 2SD1485
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1485 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1054 5.0±0.2 (0.7) 15.0±0.3 (3.2) 15.0±0.2 φ 3.2±0.1 (3.5) Solder Dip
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2002/95/EC)
2SD1485
2SB1054
2SB1054
2SD1485
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2SB1054
Abstract: 2SD1485
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1054 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1485 Unit: mm 5.0±0.2 M Di ain sc te on na tin nc ue e/ d (0.7) 15.0±0.3 15.0±0.2
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2002/95/EC)
2SB1054
2SD1485
2SB1054
2SD1485
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2SB1050
Abstract: 2sB105
Text: Transistors 2SB1050 Silicon PNP epitaxial planar type For low-frequency amplification Unit: mm 2.5±0.1 Collector-emitter voltage Base open Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation * Junction temperature
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2SB1050
2SB1050
2sB105
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1054 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1485 Unit: mm 5.0±0.2 M Di ain sc te on na tin nc ue e/ d (0.7) 15.0±0.3 15.0±0.2
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2002/95/EC)
2SB1054
2SD1485
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2SB1052
Abstract: 2SD1480 8MA11
Text: Power T ransistòrs 2SB1052 2SB 1052 Silicon PNP Triple-Diffused Planar Type Package Dimensions Power Amplifier Complementary Pair with 2SD1480 • Features . • High DC c u rre n t gain I i f e and good linearity • Low collector-eim itter saturation voltage (VcEcsao)
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2SB1052
2SD1480
b13Efl55
0QlbS13
2SB1052
2SD1480
8MA11
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2SD1488
Abstract: 2SB1057 7A20 33SI 2sB105
Text: 2SD1488 2 SD 1 4 8 8 U H V NPN /' —•^■Jl^/Si N P N T rip le D iffused P lanar Power Amplifier i] /'Complementary Pair with 2SB1057 U n it : mm 5 .2 m a x . 2SB1057 4 ~ ■ # n d> CM it/F e a tu r e s ■X 3§ L 4J* -1 o • £ k , ¡ t S t S i X i f 1 > ii£ h FE
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2SD1488
2SB1057
2SB1057
33-SI/hFE2
2SD1488
7A20
33SI
2sB105
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2SB1051K
Abstract: T146 T147 2sb1051
Text: h ÿ "yv7> £ /Transistors 1 1 2SB1051K Epitaxial Planer PNP Silicon Transistor fô ll'/& S :friitiffl/L o w Freq. Power Amp. * ÿfft^i& lll/D im en sio n s Unit : mm IC = 1 A 2) V c E l s a t ) ^ ' » VCE ( s a t ) = - 0 2 V (T yp.) (lc /lB = -5 0 0 m A /-5 0 m A )
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2SB1051K
-500mA/-50mA)
SC-59
10X10-Â
T146
T147
2sb1051
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