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    2N6031 Search Results

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    2N6031 Price and Stock

    Microchip Technology Inc 2N6031

    POWER BJT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2N6031 Bulk 100
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    • 100 $112.3208
    • 1000 $112.3208
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    Avnet Americas 2N6031 Bulk 36 Weeks 100
    • 1 $120.94
    • 10 $120.94
    • 100 $112.32
    • 1000 $107.98
    • 10000 $107.98
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    Mouser Electronics 2N6031
    • 1 $120.94
    • 10 $120.94
    • 100 $120.94
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    Microchip Technology Inc 2N6031 1
    • 1 $120.94
    • 10 $120.94
    • 100 $120.94
    • 1000 $120.94
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    Onlinecomponents.com 2N6031
    • 1 -
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    • 100 $110.63
    • 1000 $110.63
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    NAC 2N6031 2
    • 1 $123.41
    • 10 $123.41
    • 100 $113.67
    • 1000 $105.35
    • 10000 $105.35
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    Master Electronics 2N6031
    • 1 -
    • 10 -
    • 100 $110.63
    • 1000 $110.63
    • 10000 $110.63
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    Motorola Semiconductor Products 2N6031

    Bipolar Junction Transistor, PNP Type, TO-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N6031 1
    • 1 $8.4687
    • 10 $7.0573
    • 100 $7.0573
    • 1000 $7.0573
    • 10000 $7.0573
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    2N6031 2
    • 1 $9
    • 10 $7.5
    • 100 $7.5
    • 1000 $7.5
    • 10000 $7.5
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    Solid State Devices Inc (SSDI) 2N6031

    Bipolar Junction Transistor, PNP Type, TO-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N6031 1
    • 1 $8.4687
    • 10 $8.4687
    • 100 $8.4687
    • 1000 $8.4687
    • 10000 $8.4687
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    2N6031 Datasheets (23)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N6031 Motorola Collector-emitter/base voltage: 140Vdc 16 Amp high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits - Pol=PNP / Pkg=TO3 / Vceo=140 / Ic=16 / Hfe=15-60 / fT(Hz)=- / Pwr(W)=200 Original PDF
    2N6031 On Semiconductor POWER TRANSISTORS COMPLEMENTARY SILICON - Pol=PNP / Pkg=TO3 / Vceo=140 / Ic=16 / Hfe=15-60 / fT(Hz)=- / Pwr(W)=200 Original PDF
    2N6031 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N6031 API Electronics Short form transistor data Short Form PDF
    2N6031 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N6031 Motorola The European Selection Data Book 1976 Scan PDF
    2N6031 Motorola European Master Selection Guide 1986 Scan PDF
    2N6031 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N6031 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6031 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N6031 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6031 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2N6031 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6031 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6031 Unknown Transistor Replacements Scan PDF
    2N6031 Unknown Cross Reference Datasheet Scan PDF
    2N6031 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N6031 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6031 On Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Bipolar Power, PNP, 16A, 140V, Pkg Style TO204 Scan PDF
    2N6031 PPC Products Transistor Short Form Data Scan PDF

    2N6031 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5631

    Abstract: 2N6031
    Text: Product Specification www.jmnic.com 2N5631 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N6031 ・High collector-emitter sustaining voltage ・High DC current gain ・Low collector-emitter saturation voltage APPLICATIONS


    Original     		PDF 2N5631 2N6031 2N5631 2N6031

    Motorola transistor 388 TO-204AA

    Abstract: 714 ic BC 458 2SC124 BU108 BU326 2SA1046 2SC7 BDX54 2SD214
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6030 thru 2N6031 See 2N5630 Plastic Darlington Complementary Silicon Power Transistors PNP 2N6035 . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —


    Original     		PDF 2N6030 2N6031 2N5630) 2N6035, 2N6038 2N6036, 2N6039 225AA 2N6035 2N6036* Motorola transistor 388 TO-204AA 714 ic BC 458 2SC124 BU108 BU326 2SA1046 2SC7 BDX54 2SD214

    IRF 548

    Abstract: irf 1244 IRF 547 IRF 725 irf 846 IRF 024 fsc 2n7000 IRF 850 irf818 iRF 800
    Text: Semiconductor Directory Mfr.Õs Type 13 Price Mfr.Õs Code Page Mfr.Õs Type Mfr.Õs Code Page 0.05 0.28 0.25 0.30 0.22 GIS ONS ONS ONS ONS 812 851 851 849 849 2N5886 2N6027 2N6028 2N6031 2N6035 Price Mfr.Õs Type Mfr.Õs Code Page 2.23 0.24 0.23 3.12 0.39


    Original     		PDF 1N5333B 1N914 2N5886 30WQ04FN 1N5335B 1SMB15AT3 2N6027 30WQ06FN 1N5336B 2N6028 IRF 548 irf 1244 IRF 547 IRF 725 irf 846 IRF 024 fsc 2n7000 IRF 850 irf818 iRF 800

    2N6031

    Abstract: 2N5631 1N5825 MSD6100 TF WIRE
    Text: ON Semiconductort NPN High-Voltage - High Power Transistors 2N5631 PNP 2N6031 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage – • • 16 AMPERE


    Original     		PDF 2N5631 2N6031 r14525 2N5631/D 2N6031 2N5631 1N5825 MSD6100 TF WIRE

    Untitled

    Abstract: No abstract text available
    Text: 2N6031 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)140 V(BR)CBO (V)140 I(C) Max. (A)16 Absolute Max. Power Diss. (W)200# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)2.0m @V(CBO) (V) (Test Condition)140 V(CE)sat Max. (V)2.0 @I(C) (A) (Test Condition)16


    Original     		PDF 2N6031

    2N5631

    Abstract: 2N5631 equivalent 2N6031
    Text: SavantIC Semiconductor Product Specification 2N5631 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2N6031 ·High collector-emitter sustaining voltage ·High DC current gain@IC=8A ·Low collector saturation voltage APPLICATIONS


    Original     		PDF 2N5631 2N6031 2N5631 2N5631 equivalent 2N6031

    TO-225AA

    Abstract: 2n6039 motorola 10 amp npn darlington power transistors Darlington Silicon Power Transistor darlington power transistor NPN 300 VOLTS vce POWER TRANSISTOR 1N5825 2N5630 2N6030 2N6031
    Text: MOTOROLA Order this document by 2N6035/D SEMICONDUCTOR TECHNICAL DATA 2N6030 thru 2N6031 See 2N5630 Plastic Darlington Complementary Silicon Power Transistors PNP 2N6035 . . . designed for general–purpose amplifier and low–speed switching applications.


    Original     		PDF 2N6035/D 2N6030 2N6031 2N5630) 2N6035 2N6035, 2N6038 2N6036, 2N6039 225AA TO-225AA 2n6039 motorola 10 amp npn darlington power transistors Darlington Silicon Power Transistor darlington power transistor NPN 300 VOLTS vce POWER TRANSISTOR 1N5825 2N5630 2N6031

    2n6031

    Abstract: No abstract text available
    Text: Central 2N6031 TM Semiconductor Corp. PNP SILICON POWER TRANSISTOR 140 VOLTS, 200 WATTS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6031 is a 16 Ampere PNP Silicon Power Transistor designed for use in high power amplifiers and high voltage switching regulator circuits.


    Original     		PDF 2N6031 200mA 500kHz 100kHz 27-August

    2N5631

    Abstract: 2N6031 2N5631 equivalent
    Text: Inchange Semiconductor Product Specification 2N5631 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N6031 ・High collector-emitter sustaining voltage ・High DC current gain@IC=8A ・Low collector saturation voltage APPLICATIONS


    Original     		PDF 2N5631 2N6031 2N5631 2N6031 2N5631 equivalent

    2n6031

    Abstract: 2n5631
    Text: ON Semiconductort NPN High−Voltage − High Power Transistors 2N5631 PNP 2N6031 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage − • • 16 AMPERE


    Original     		PDF 2N5631 2N6031 2n6031

    Untitled

    Abstract: No abstract text available
    Text: , Una. t/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 NPN High-Voltage - High Power Transistors 2N5631 PNP 2N6031 . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits.


    Original     		PDF 2N5631 2N6031 140Vdc 16ollector-Emitter 16Adc, 10Adc, 10Vdc,

    2N6031

    Abstract: 2N6031 amplifier 2N5631
    Text: SavantIC Semiconductor Product Specification 2N6031 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2N5631 ·High collector sustaining voltage ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·For high power audio amplifier and


    Original     		PDF 2N6031 2N5631 2N6031 2N6031 amplifier 2N5631

    2N6031

    Abstract: 1N5825 2N5631 MSD6100
    Text: ON Semiconductort NPN High−Voltage − High Power Transistors 2N5631 PNP 2N6031 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage − • • w 16 AMPERE


    Original     		PDF 2N5631 2N6031 2N5631/D 2N6031 1N5825 2N5631 MSD6100

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    UJT 2N2646

    Abstract: 2N2646 pin diagram UJT-2N2646 PIN DIAGRAM DETAILS UJT pin diagram 2N2646 pin diagram of UJT-2N2646 GE Transient Voltage Suppression Manual UJT THEORY AND CHARACTERISTICS 957B MDA2500 pn junction DIODE 1N4001
    Text: TVS/Zener Theory and Design Considerations Handbook HBD854/D Rev. 0, Jun−2005 SCILLC, 2005 Previous Edition © 2001 as Excerpted from DL150/D “All Rights Reserved’’ http://onsemi.com 1 Technical Information, Application Notes and Articles Zener Diode Theory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3


    Original     		PDF HBD854/D Jun-2005 DL150/D NLAS3158/D UJT 2N2646 2N2646 pin diagram UJT-2N2646 PIN DIAGRAM DETAILS UJT pin diagram 2N2646 pin diagram of UJT-2N2646 GE Transient Voltage Suppression Manual UJT THEORY AND CHARACTERISTICS 957B MDA2500 pn junction DIODE 1N4001

    transistor mosfet buv18a

    Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
    Text: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9


    Original     		PDF

    BD368

    Abstract: MPC1000 MPC900 bd365 voltage regulators 20 amp to3 b0365 BD364 MJ3771 2N5629 2N5631
    Text: NPN PNP v CEO V o lts M in./M ax. •c Am p V CE sat @ >C V o lts Max. Am p. f T MHz PD Case Watts le = 16.0 A. MJ4034 BD317 2N 5629 M J4035 2N 5630 M J3773 2N5631 MJ4031 BD318 2N6029 M J4032 2 N6030 2N6031 80 100 100 100 120 140 140 1 0 0 0 /2 5 /25 /10 0


    OCR Scan     		PDF MJ4034 MJ4031 BD317 BD318 2N5629 2N6029 MJ4035 MJ4032 2N5630 2l\l6030 BD368 MPC1000 MPC900 bd365 voltage regulators 20 amp to3 b0365 BD364 MJ3771 2N5631

    transistor 2n6038

    Abstract: 2N6039
    Text: MOTOROLA Order this document by 2N6035/D SEMICONDUCTOR TECHNICAL DATA 2N6030 thru 2N6031 See 2N5630 P lastic Darlington C om plem entary Silicon Pow er Transistors PNP 2N 60 35 . . . designed for general-purpose amplifier and low -speed switching applications.


    OCR Scan     		PDF 2N6035/D 2N6035, 2N6038 2N6036, 2N6039 -225A 2N6030 2N6031 2N5630) 2N6035 transistor 2n6038

    npn darlington transistor 150 watts

    Abstract: 2n6038 2N6039 transistor 2n6038 2N6035 2N8030
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N8030 thru 2N6031 8m 2NS630J Plastic Darlington Com plem entary Silicon Power Transistors PNP 2N 6035 . . . designed for general-purpose amplifier and low-speed switching applications. • • • • • High DC Current Gain —


    OCR Scan     		PDF 2N8030 2N6031 2NS630J 2N6035, 2N6038 2N6036, 2N6039 O-225AA 2N603S 2N6036 npn darlington transistor 150 watts 2n6038 transistor 2n6038 2N6035

    2N5629 MOTOROLA

    Abstract: 2N5629 2n6029 2N6030 2N6031
    Text: M O T O R O LA SC XSTRS/R F 1SE D | b3b?aSM MOTOROLA SEMICONDUCTOR TECHNICAL DATA GGÔMSSG □ | r - 33-/0 NPN PNP 2N5629 2N5630 2N5631 2N6029 2N6030 2N6031 HIGH-VOLTAGE - HIGH POWER TRANSISTORS 16 AMPERE . . . designed fo r use in high pow er audio am p lifie r applications and


    OCR Scan     		PDF 2N5629 2N5630 2N5631 2N6029 2N6030 2N6031 2N6029, 2N6030, b3t72SM 2N5629 MOTOROLA 2N6031

    23741

    Abstract: PPC 2n5683 JANTX2N6379 JANTX2N6437
    Text: Micmsemi PNP Transistors Part Number 2N6609 2N5879 2N5880 2N5678 2N5958 2N5960 2N6029 , 2N6030 2N6031 2N5745 2N5883 2N5884 2N6436 2N6437 JAN2N6437 JANTX2N6437 JANTXV2N6437 2N6436 JAN2N6438 JANTX2N6438 JANTXV2N6438 2N4398 2N4399 2N6329 2N6330 2N6331 2N5967


    OCR Scan     		PDF PNP-11 23741 PPC 2n5683 JANTX2N6379 JANTX2N6437

    Untitled

    Abstract: No abstract text available
    Text: 0043592 A P I ELECTRONICS INC A P I 26C 00234 ELECTRONICS INC 2b D » F | d D4 3 S c12 D 00 0 2 3 4 b COLLECTOR CURRENT = 15 AMPS NPN TYPES - CONTINUED Device No C ase 2N6496 2N6579 2N6580 2N6581 2N6582 2N6583 2N6584 2N6585 TO-3 T O -3 TO-3 TO-3 TO-3 TO-3


    OCR Scan     		PDF 2N6496 2N6579 2N6580 2N6581 2N6582 2N6583 2N6584 2N6585 O61/1

    2N5969

    Abstract: 2n6182 2N6031 i8080 2N6030 2N5876 2N5879 2N5880 2N5883 2N5954
    Text: PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST m hF:E SAT . VOLTA GES M 'c (A 4 M in . M ax. 6 VCE (V) 4 20 60 6 4 6 80 80 6 4 TO-3 60 60 5 2N 5884 TO-3 80 80 2N 5954 TO -66 90 2N 5955 TO -66 2N 5956 X m PNP DEVICE BR EAKDOY V OLTAGE S (V) 0.5 1 2 20


    OCR Scan     		PDF 2N5876 2N5879 2N5880 2N5883 2N5884 2N5954 2N5955 2N5956 2N5958 2N5960 2N5969 2n6182 2N6031 i8080 2N6030

    transistor buv18a

    Abstract: motorola transistor cross reference BUV18A BUX98A motorola N6030 BUT13 transistor buv10 MPSU06 transistor MJ12005 MOTOROLA MJ15021 "cross reference"
    Text: STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR COLLECTOR CONNECTED TO TAB Resistive Switching IcCont Amps Max VcEO sus) Volts Min 0.5 300 MPSU10 0.8 40 MPSU02 1 120 2 Device Type *s US Max tf US Max fT MHz Min P q (Case) Watts hFE Min/Max @ lc Amp MPSU60 30 min


    OCR Scan     		PDF MPSU10 MPSU02 MPSU03 MPSU04 MPSU01 MPSU01A MPSU45# MPSU60 MPSU52 MPSU51 transistor buv18a motorola transistor cross reference BUV18A BUX98A motorola N6030 BUT13 transistor buv10 MPSU06 transistor MJ12005 MOTOROLA MJ15021 "cross reference"