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    Sensata Technologies MX64CBC

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    TTI MX64CBC 20
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    Sensata Technologies MX64CCB

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    Others 256MB32MX64,PC133

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    2MX64 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    642006EGM1G09TD

    Abstract: DIMM 1998
    Text: 2M x 64 Bit 3.3V UNBUFFERED EDO DIMM Extended Data Out EDO DRAM DIMM 642006EGM1G09TD 168 Pin 2Mx64 EDO DIMM Unbuffered, 1k Refresh, 3.3V with SPD Pin Assignment Pin# General Description The module is a 2Mx64 bit, 9 chip, 3.3V, 168 Pin DIMM module consisting of (8) 1Mx16 (TSOP) DRAM


    Original     		PDF 642006EGM1G09TD 2Mx64 DS390-1 DIMM 1998

    Untitled

    Abstract: No abstract text available
    Text: WEDPF2M64-XBX3 HI-RELIABILITY PRODUCT 2Mx64 3.3V Simultaneous Operation Multi-Chip Package FEATURES • Access Times of 100, 120, 150ns ■ Unlock Bypass Program command • Reduces overall programming time when issuing multiple program command sequences ■ Packaging


    Original     		PDF WEDPF2M64-XBX3 2Mx64 150ns 16KByte, 32KByte, 64kBytes

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM366F224CJ1 KMM366F224CJ1 EDO Mode without buffer 2M x 64 DRAM DIMM using 1Mx16, Dual Bank, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F224CJ1 is a 2Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F224CJ1 consists of eight CMOS 1Mx16bits DRAMs in SOJ 400mil


    Original     		PDF KMM366F224CJ1 1Mx16, 2Mx64bits 1Mx16bits 400mil 168-pin KMM366F224CJ1

    hym7v64200

    Abstract: No abstract text available
    Text: HYM7V64200B F-Series Unbuffered 2Mx64 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V64200B is high speed 3.3Volt synchronous dynamic RAM module consisting of eight 2Mx8 bit Synchronous DRAMs in TSOPII and 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy circuit


    Original     		PDF HYM7V64200B 2Mx64 168-pin 168Pin hym7v64200

    W72M64V-XBX

    Abstract: No abstract text available
    Text: W72M64V-XBX 2Mx64 3.3V Simultaneous Operation Flash Multi-Chip Package *Preliminary FEATURES ! Access Times of 100, 120, 150ns ! Unlock Bypass Program command ! Packaging • Reduces overall programming time when issuing multiple program command sequences


    Original     		PDF W72M64V-XBX 2Mx64 150ns 13x22mm 100ns 120ns W72M64V-XBX

    ga15 engine wiring diagram

    Abstract: IBM11M4730C4M IBM13T2649JC10T
    Text: Discontinued 12/98 - last order; 9/99 last ship IBM11M4730C4M x 72 E12/10, 5.0V, Au. IBM13T2649JC 2M x 64 SDRAM SO DIMM Features • 144 Pin (emerging) JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module • 2Mx64 Synchronous DRAM SO DIMM • Performance:


    Original     		PDF IBM11M4730C4M E12/10, IBM13T2649JC 2Mx64 ga15 engine wiring diagram IBM13T2649JC10T

    bsc 60h

    Abstract: No abstract text available
    Text: White Electronic Designs W72M64V-XBX 2Mx64 3.3V Simultaneous Operation Flash Multi-Chip Package *Advanced FEATURES • Access Times of 100, 120, 150ns ■ Unlock Bypass Program command ■ Packaging • • 159 PBGA, 13x22mm - 1.27mm pitch Reduces overall programming time when issuing


    Original     		PDF W72M64V-XBX 2Mx64 150ns 13x22mm 2x2Mx32 100ns 120ns 150ns bsc 60h

    km48c2104bk

    Abstract: KM48C2104 KMM364E213BK
    Text: DRAM MODULE KMM364E213BK/BS KMM364E213BK/BS Fast Page with EDO Mode 2M x 64 DRAM DIMM using 2Mx8, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364E213B is a 2Mx64bits Dynamic RAM high density memory module. The Samsung KMM364E213B consists of eight CMOS 2Mx8bits DRAMs in SOJ/TSOP-II


    Original     		PDF KMM364E213BK/BS KMM364E213BK/BS KMM364E213B 2Mx64bits KMM364E213B 300mil 16bits 48pin 168-pin km48c2104bk KM48C2104 KMM364E213BK

    HY5117804B

    Abstract: HY5117804 HYM564214AHG HYM564214ATHG
    Text: HYM564214A H-Series Buffered 2Mx64 bit CMOS DRAM MODULE based on 2Mx8 DRAM, EDO, 2K-Refresh GENERAL DESCRIPTION The HYM564214A H-Series is a 2Mx64-bit Extended Data Out mode CMOS DRAM module consisting of eight HY5117804B in 28 pin SOJ or TSOPII and two 16-bit BiCMOS line driver in TSSOP on a 168 pin


    Original     		PDF HYM564214A 2Mx64 2Mx64-bit HY5117804B 16-bit HYM564214AHG 168-Pin HY5117804 HYM564214ATHG

    Untitled

    Abstract: No abstract text available
    Text: IBM13T2649JC 2M x 64 S D R A M SO DIMM Features • 144 Pin emerging JEDEC Standard, 8 Byte Small Outline Dual-In-Iine Memory Module • 2Mx64 Synchronous DRAM SO DIMM • Performance: 10 CAS Latency J Units j 3 jfcK I Clock Frequency j 100 j MHz ! jtcK


    OCR Scan     		PDF IBM13T2649JC 2Mx64

    Untitled

    Abstract: No abstract text available
    Text: IBM13T2649NC 2M x 64 SDRAM SO DIMM Features • 144 Pin emerging JEDEC Standard, 8 Byte Small Outline Dual-In-Iine Memory Module • 2Mx64 Synchronous DRAM SO DIMM • Performance: 10 CAS Latency § Units 3 jfcK I Clock Frequency I 100 j MHz jtcK j Clock Cycle


    OCR Scan     		PDF IBM13T2649NC 2Mx64

    Untitled

    Abstract: No abstract text available
    Text: IBM11M2645H 2M x 64 DRAM MODULE Features System Performance Benefits: • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 2Mx64 Extended Data Out Page Mode DIMM • Performance: -60 -70 -Buffered inputs except RAS, Data -Reduced noise (32 Vss/Vcc pins)


    OCR Scan     		PDF IBM11M2645H 2Mx64 104ns 124ns

    Untitled

    Abstract: No abstract text available
    Text: IB M 1 3 T 1 6 4 9 N C Preliminary 1M x 64 1 Bank SDRAM SO DIMM Features • 144 Pin emerging JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module • 2Mx64 Synchronous DRAM SO DIMM • Performance: I 10 CAS Latency 3 ! 12 j Units ! 3 jfcK I Clock Frequency


    OCR Scan     		PDF 2Mx64 IBM13T1649NC 75H5936 GA14-4477-00

    Untitled

    Abstract: No abstract text available
    Text: I = = = = ¥ = = = ’ = IB M 1 1 N 2 6 4 5 H IB M 1 1 N 2 7 3 5 H 2M x 64/72 DRAM MODULE Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • 2Mx64, 2Mx72 Extended Data Out Page Mode DIMMs applications • System Performance Benefits:


    OCR Scan     		PDF 2Mx64, 2Mx72 104ns

    Untitled

    Abstract: No abstract text available
    Text: IBM11 M2640H IBM11 M2640HB 2M x 64 DRAM MODULE Features • Optimized for byte-write non-parity applications • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • System Performance Benefits: • 2Mx64 Fast Page Mode DIMM • Performance: ; tRAC


    OCR Scan     		PDF IBM11 M2640H M2640HB 2Mx64 SA14-4612-04

    Untitled

    Abstract: No abstract text available
    Text: KMM364Ë224AJ DRAM MODULE KMM364E224AJ Fast Page with EDO Mode 2Mx64 DRAM DIMM based on 1M x 1 6 ,1 K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364F224AJ is a 2M bit X 64 Dynamic RAM high density memory module. The Samsung KMM364E224AJ consists of eight CMOS


    OCR Scan     		PDF KMM364Ã 224AJ KMM364E224AJ 2Mx64 KMM364F224AJ 1Mx16bit 44-pin 400mil 48pin

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM364E213BK/BS KMM364E213BK/BS Fast Page with EDO Mode 2Mx64 DRAM DIMM based on 2Mx8, 2K Refresh, 5V G ENERAL DESCRIPTION FEATURES The Samsung KMM364E213B is a 2M bit x 64 Dynamic RAM high density memory module. The • Part Identification Samsung KMM364E213B consists of eight CMOS


    OCR Scan     		PDF KMM364E213BK/BS KMM364E213BK/BS 2Mx64 KMM364E213B KMM364E213BS cycles/32ms 1000mil) KMM364E213BK

    kmm366s203b

    Abstract: KMM366S203BTN-G0 KMM366S203BTN-G2 ram kmm366s203btn-g2
    Text: KMM366S203BTN NEW JEDEC SDRAM MODULE KMM366S203BTN SDRAM DIMM 2Mx64 SDRAM DIMM based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S203BTN is a 2M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM366S203BTN KMM366S203BTN 2Mx64 400mil 168-pin kmm366s203b KMM366S203BTN-G0 KMM366S203BTN-G2 ram kmm366s203btn-g2

    KMM466S203BT-F0

    Abstract: KMM466S203BT-F2
    Text: KMM466S203BT NEW JEDEC SDRAM MODULE KMM466S203BT S D R A M SODIMM 2Mx64 SDRAM SODIMM based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S203BT is a 2M bitx 64 Synchronous Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM466S203BT KMM466S203BT 2Mx64 400mii 144-pin 7Th4142 KMM466S203BT-F0 KMM466S203BT-F2

    CQ58

    Abstract: No abstract text available
    Text: - » Y U H D f l l —• HYM7V64200B Z-SERIES SO DIMM 2MX64 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V64200B is high speed 3.3Volt synchronous dynamic RAM module consisting of eight 2Mx8 bit Synchronous DRAMs in 44-pin SOJ or TSOPli and 8-pin TSSO P 2K bit EEPROM on a 144-pin glassepoxy circuit board. Two 0.22|iF and 0.0022|_iF decoupling capacitors are mounted for each SDRAM.


    OCR Scan     		PDF HYM7V64200B 2MX64 44-pin 144-pin CQ58

    ltzg

    Abstract: No abstract text available
    Text: “ H Y U N D A I • HYM7V65200C Z-SERIES SO-DIMM 2Mx64 bit SDRAM MODULE based on 2Ux8 SDRAM, LVTTL, 4K-Re1resh DESCRIPTION The HYM7V64200C is high speed 3.3Voit CMOS Synchronous DRAM module consisting of eight 2Mx8 bit Synchronous DRAMs in 44-pin TSOPII and one 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy


    OCR Scan     		PDF HYM7V65200C 2Mx64 HYM7V64200C 44-pin 168-pin ltzg

    Untitled

    Abstract: No abstract text available
    Text: IBM13N2649JC IBM13N2739JC Preliminary 2M X 64/72 1 Bank Unbuffered SDRAM Module Features • 168 Pin emerging JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • 2Mx64/72 Synchronous DRAM DIMM • Performance: CAS Latency jfcK I Clock Frequency


    OCR Scan     		PDF IBM13N2649JC IBM13N2739JC 2Mx64/72 75H1990 SA14-4713-01

    Untitled

    Abstract: No abstract text available
    Text: IBM13T2649JC 2M x 64 1 Bank S D R A M SO DIMM Features • 144 Pin emerging JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module • 2Mx64 Synchronous DRAM SO DIMM • Performance: CAS Latency • • • • • • jfcK I Clock Frequency jtcK


    OCR Scan     		PDF IBM13T2649JC 2Mx64 75H5376 A14-4476-01

    Untitled

    Abstract: No abstract text available
    Text: KMM466F203BS-L KMM466F213BS-L DRAM MODULE KMM466F203BS-L & KMM466F213BS-L EDO Mode without buffer 2Mx64 based on 2Mx8, 2K & 4K Refresh, 3.3V, Low Power/Self-Refresh G ENER AL DESCRIPTION FEATURES The Samsung KMM466F20 1 3BS-L is a 2M bit x 64 Dynamic RAM high density memory module. The


    OCR Scan     		PDF KMM466F203BS-L KMM466F213BS-L KMM466F213BS-L 2Mx64 KMM466F20 cycles/128ms,