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    KM48C2104 Price and Stock

    Samsung Semiconductor KM48C2104CS-5

    Dynamic RAM, EDO, 2M x 8, 28 Pin, Plastic, TSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components KM48C2104CS-5 1,964
    • 1 $5.937
    • 10 $5.937
    • 100 $5.937
    • 1000 $2.9685
    • 10000 $2.9685
    		Buy Now

    Samsung Semiconductor KM48C2104BS-6

    2M X 8 EDO DRAM, 60 ns, PDSO28
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components KM48C2104BS-6 22
    • 1 $7.5
    • 10 $3.75
    • 100 $3.75
    • 1000 $3.75
    • 10000 $3.75
    		Buy Now

    Samsung Semiconductor KM48C2104CKL6

    2M X 8BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT EDO DRAM, 2MX8, 60ns, CMOS, PDSO28
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA KM48C2104CKL6 922
    • 1 -
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    KM48C2104 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    KM48C2104CK-5 Samsung Electronics 2M x 8-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM48C2104CK-6 Samsung Electronics 2M x 8-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM48C2104CK-L-5 Samsung Electronics 2M x 8-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM48C2104CK-L-6 Samsung Electronics 2M x 8-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM48C2104CS-6 Samsung Electronics 2M x 8-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM48C2104CS-L-5 Samsung Electronics 2M x 8-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM48C2104CS-L-6 Samsung Electronics 2M x 8-Bit CMOS Dynamic RAM with Extended Data Out Original PDF

    KM48C2104 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C2004C

    Abstract: No abstract text available
    Text: KM48C2004C, KM48C2104C KM48V2004C, KM48V2104C CMOS DRAM 2M x 8Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K


    Original     		PDF KM48C2004C, KM48C2104C KM48V2004C, KM48V2104C ad04C, 300mil C2004C

    km48c2104

    Abstract: No abstract text available
    Text: KM48C2004C, KM48C2104C KM48V2004C, KM48V2104C CMOS DRAM 2M x 8Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K


    Original     		PDF KM48C2004C, KM48C2104C KM48V2004C, KM48V2104C ad04C, 300mil km48c2104

    km48c2104bk

    Abstract: No abstract text available
    Text: DRAM MODULE KMM372E213BK/BS KMM372E213BK/BS Fast Page with EDO Mode 2Mx72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372E213B is a 2Mx72bits Dynamic RAM high density memory module. The Samsung KMM372E213B consists of nine CMOS 2Mx8bits DRAMs in SOJ/TSOP-II


    Original     		PDF KMM372E213BK/BS KMM372E213BK/BS 2Mx72 KMM372E213B 2Mx72bits KMM372E213B 300mil 16bits 48pin 168-pin km48c2104bk

    km48c2104bk

    Abstract: KM48C2104 KMM364E213BK
    Text: DRAM MODULE KMM364E213BK/BS KMM364E213BK/BS Fast Page with EDO Mode 2M x 64 DRAM DIMM using 2Mx8, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364E213B is a 2Mx64bits Dynamic RAM high density memory module. The Samsung KMM364E213B consists of eight CMOS 2Mx8bits DRAMs in SOJ/TSOP-II


    Original     		PDF KMM364E213BK/BS KMM364E213BK/BS KMM364E213B 2Mx64bits KMM364E213B 300mil 16bits 48pin 168-pin km48c2104bk KM48C2104 KMM364E213BK

    C2004A

    Abstract: KM48C2104A C2104A C2104 km48v2104a
    Text: KM48C2004A, KM48C2104A KM48V2004A, KM48V2104A CMOS DRAM 2M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply


    OCR Scan     		PDF KM48C2004A, KM48C2104A KM48V2004A, KM48V2104A b4142 C2004A KM48C2104A C2104A C2104 km48v2104a

    A10CE

    Abstract: OYNN KM48C2104B km4e KM48V2104B
    Text: KM48C2004B, KM48C2104B KM48V2004B, KM48V2104B CMOS DRAM 2M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fa m ily of 2,097,152 x 8 bit Extended Data Out CM OS DRAMs. Extended Data O ut M ode offers high speed random access of m em ory cells w ithin the sam e row, so called H yper Page Mode. Power


    OCR Scan     		PDF KM48C2004B, KM48C2104B KM48V2004B, KM48V2104B A10CE OYNN km4e KM48V2104B

    Untitled

    Abstract: No abstract text available
    Text: KM48C2004A, KM48C2104A KM48V2004A, KM48V2104A CMOS DRAM 2M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply


    OCR Scan     		PDF KM48C2004A, KM48C2104A KM48V2004A, KM48V2104A 002D323

    KM48C2104A

    Abstract: No abstract text available
    Text: KM48C2104A/AL/ALL/ASL CMOS DRAM 2 M x 8 Bit CM OS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: tRAC tCAC tRC tHPC 13ns 90ns 20ns 24ns KM48C2104A/AL/ALL/ASL-5 50ns KM48C2104A/AIVALL/ASL-6 60ns 15ns 110ns KM48C2104A/AL/ALL/ASL-7


    OCR Scan     		PDF KM48C2104A/AL/ALL/ASL KM48C2104A/AL/ALL/ASL-5 KM48C2104A/AIVALL/ASL-6 110ns KM48C2104A/AL/ALL/ASL-7 130ns KM48C2104A/AL/ALL/ASL-8 150ns KM48C2104A/AL/ALL/ASL 28-LEAD KM48C2104A

    KM48C2104

    Abstract: KM48C2104aj KM48C2104A
    Text: CMOS DRAM KM48C2104A/AL/ALL/ASL 2M x 8 Bit CMOS Dynamic RAM with Extended Data Out GENERAL DESCRIPTION FEATURES T h e S a m s u n g K M 4 8 C 2 10 4 A /A L /A L L /A S L is a h ig h • Performance range: tRAC tCAC tRC ta re K M 4 8 C 2 1 0 4 A / A L / A L L / A S L -5


    OCR Scan     		PDF KM48C2104A/AL/ALL/ASL 150ns 28-LEAD KM48C2104 KM48C2104aj KM48C2104A

    Untitled

    Abstract: No abstract text available
    Text: KM48C2004C, KM48C2104C KM48V2004C, KM48V2104C CMOS DRAM 2M x 8Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fam ily of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data O ut Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K


    OCR Scan     		PDF KM48C2004C, KM48C2104C KM48V2004C, KM48V2104C

    KM48C2104B

    Abstract: No abstract text available
    Text: KM48C2004B, KM48C2104B KM48V2004B, KM48V2104B CMOS DRAM 2 M x 8 Bit C M O S Dynamic R A M with Extended Data Out DESCRIPTION This is a fam ily of 2,097,152 x 8 bit Extended Data O ut CM OS DRAMs. Extended Data O ut M ode offers high speed random access of m em ory cells w ithin th e sam e row, so called H yper P age M ode. Power


    OCR Scan     		PDF KM48C2004B, KM48C2104B KM48V2004B, KM48V2104B KM48C2104B

    C2004A

    Abstract: KM48C2104A
    Text: KM48C2004A, KM48C2104A KM48V2004A, KM48V2104A CMOS DRAM 2 M x 8 Bit CM OS Dynamic RAM with Extended Data Out DESCRIPTION T his is a fa m ily of 2 ,0 97 ,1 5 2 x 8 bit E xtended Data O ut C M O S DRAM s. E xtended D ata O ut M ode offers high speed random access of m em ory cells w ithin the sam e row, so called H yper Page Mode. Pow er supply


    OCR Scan     		PDF KM48C2004A, KM48C2104A KM48V2004A, KM48V2104A C2004A

    C2104C

    Abstract: No abstract text available
    Text: KM48C2004C, KM48C2104C KM48V2004C, KM48V2104C CMOS DRAM 2M x 8Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K


    OCR Scan     		PDF KM48C2004C, KM48C2104C KM48V2004C, KM48V2104C 64ms/32ms C2104C

    Untitled

    Abstract: No abstract text available
    Text: KM48C2004BK CMOS D R A M ELECTRONICS 2 M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		PDF KM48C2004BK 16Mx4, 512Kx8)

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM364E213BK/BS KMM364E213BK/BS Fast Page with EDO Mode 2Mx64 DRAM DIMM based on 2Mx8, 2K Refresh, 5V G ENERAL DESCRIPTION FEATURES The Samsung KMM364E213B is a 2M bit x 64 Dynamic RAM high density memory module. The • Part Identification Samsung KMM364E213B consists of eight CMOS


    OCR Scan     		PDF KMM364E213BK/BS KMM364E213BK/BS 2Mx64 KMM364E213B KMM364E213BS cycles/32ms 1000mil) KMM364E213BK

    VG264265B

    Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
    Text: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D


    OCR Scan     		PDF 256kxl6 256kxl6, VG264265B HM514265D HY514264B MT4C16270 uPD4244265LE KM416C254D TC5144265D TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference

    4MB DRAM

    Abstract: 4MX16 1MX16
    Text: TABLE OF CONTENTS I. GENERAL INFORMATION 1. Introduction . 11 2. Product Guide . 17 3. Ordering information . .


    OCR Scan     		PDF KM41C4000D/KM41V4000D. KM44C1000D/KM44V1000D. KM44C1003D -KM44C1004D/KM44V1004D. KM44C1005D -KM48C512D/KM48V512D. KM48C512D 4MB DRAM 4MX16 1MX16

    KM44C4000aS 6

    Abstract: KM44C4000AS KM44C4000A-S km44c4100as KM48V2100AL KM416V256BL
    Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION DRAM 4 M b it 4Mx1 1Mx4 KM41C4000C-6 KM41C4000C-7 " KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7 KM41C4000CL-8 - KM41C4002C-5 KM41C4002C-6 KM41C4002C-7 KM41C4002C-8 - KM41V4000C-6 KM41V4000C-7 KM41V4000C-8 - KM41V4000CL-6


    OCR Scan     		PDF KM41C4000C-5 KM41C4000CL-5 KM41C4002C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000CL-7 KM41C4002C-7 KM41V4000C-7 KM41V4000CL-7 KM41C4000C-8 KM44C4000aS 6 KM44C4000AS KM44C4000A-S km44c4100as KM48V2100AL KM416V256BL

    Untitled

    Abstract: No abstract text available
    Text: TABLE OF CONTENTS I. PRODUCT GUIDE 1. Introduction. 11 2. Product G u id e . 18 3. DRAM Ordering System. 23


    OCR Scan     		PDF KM41C1000D KM44C256D. KM41C4000C KM41V4000C.

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5322104CKU/CKUG KMM5322104CKU/CKUG Fast Page Mode with Extended Data Out 2M x 32 DRAM SIMM using 2Mx8 , 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5322104CKU is a 2Mx32bits RAM high density memory module. The Dynamic Part Identification


    OCR Scan     		PDF KMM5322104CKU/CKUG KMM5322104CKU/CKUG KMM5322104CKU 2Mx32bits cycles/32ms 5322104CKUG 28-pin

    Untitled

    Abstract: No abstract text available
    Text: K M 4 8 C 2 10 4 B S CMOS D R A M ELECTRONICS 2M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		PDF 16Mx4, 512Kx8) KM48C2104BS

    23C1001

    Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
    Text: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5


    OCR Scan     		PDF KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 44C256CL-8 KM44C256CSL-6 23C1001 KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000

    KM44C4105C-6

    Abstract: KM44C16004
    Text: General Information CMOS DRAM 1. introduction 4Mbit 4Mx1 KM41C4000D-5 - KM41C4000D-6 - KM41C4000D-7 KM41C4000D-L5 1Mx4 KM41C4000D-L6 KM41C4000D-L7 KM41V4000D-6 KM41V4000D-7 KM41V4000D-L6 KM41V4000D-L7 KM44C1000D-5 - KM44C1000D-6 - KM44C1000D-7 KM44C1000D-L5 - KM44C1000D-L6 - KM44C1000D-L7


    OCR Scan     		PDF KM41C4000D-5 KM41C4000D-6 KM41C4000D-7 KM41C4000D-L5 KM41C4000D-L6 KM41V4000D-6 KM41V4000D-L6 KM41C4000D-L7 KM41V4000D-7 KM41V4000D-L7 KM44C4105C-6 KM44C16004

    KM418C256

    Abstract: KM48C2100AL KM416C254 KM44V4100AL KM44C1003
    Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE DRAM Density 1M bil Org. 1Mx1 Power Supply 5V±10% Part Number KM41C1000D# Speed(ns) 60/70/80 Features Fast Page 5V±10% KM44C256D# 60/70/80 Fast Page 4Mx1 5V±10% KM41C4000C# 50/60/70/80 Fast Page KM41C4002C# 60/70/80


    OCR Scan     		PDF KM41C1000D# KM41C10OOD-L# 256Kx4) 256Kx4 KM44C256D# KM44C256D-L# KM41C4000C# KM41C4000CL# KM41C4002C# KM41V4000C# KM418C256 KM48C2100AL KM416C254 KM44V4100AL KM44C1003