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    SK Hynix Inc HY5117804BJ-60

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    HY5117804 Datasheets Context Search

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    HY5117804B

    Abstract: HY5117804 HYM564214AHG HYM564214ATHG
    Text: HYM564214A H-Series Buffered 2Mx64 bit CMOS DRAM MODULE based on 2Mx8 DRAM, EDO, 2K-Refresh GENERAL DESCRIPTION The HYM564214A H-Series is a 2Mx64-bit Extended Data Out mode CMOS DRAM module consisting of eight HY5117804B in 28 pin SOJ or TSOPII and two 16-bit BiCMOS line driver in TSSOP on a 168 pin


    Original     		PDF HYM564214A 2Mx64 2Mx64-bit HY5117804B 16-bit HYM564214AHG 168-Pin HY5117804 HYM564214ATHG

    hy5117804c

    Abstract: No abstract text available
    Text: HY5117804C,HY5116804C 2Mx8, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


    Original     		PDF HY5117804C HY5116804C

    HY5117804

    Abstract: No abstract text available
    Text: HY5117804C,HY5116804C 2Mx8, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


    Original     		PDF HY5117804C HY5116804C 10/Sep HY5117804

    HY5117804B

    Abstract: HY5117804BT HY5117804
    Text: HY5117804B,HY5116804B 2Mx8, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


    Original     		PDF HY5117804B HY5116804B HY5117804BT HY5117804

    HY5117804

    Abstract: No abstract text available
    Text: HY5117804C,HY5116804C 2Mx8, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


    Original     		PDF HY5117804C HY5116804C HY5117804

    Untitled

    Abstract: No abstract text available
    Text: • HYUNDAI HYM532224A E-Series 2M x 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532224A is a 2M x 32-bit EDO m ode CMOS DRAM m odule consisting of four HY5117804B in 28/28 pin SOJ or TSOPII and an AND gate in 16 pin SOP on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling


    OCR Scan     		PDF HYM532224A 32-bit HY5117804B HYM532224AE/ASLE/ATE/ASLTE HYM532224AEG/ASLEG/ATEG/ASLTEG 171M1N DD054M 1CE13-10-0EC94

    Untitled

    Abstract: No abstract text available
    Text: •HY U ND A I HYM572A414A F-Series Unbuffered 4M x 72-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION T ie HYM572A414A is a 4M x 72-bit EDO mode CMOS DRAM module consisting of eighteen HY5117804B in 28/28 SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1nF and 0.01 ^F


    OCR Scan     		PDF HYM572A414A 72-bit HY5117804B HYM572A414AFG/ATFG/ASLFG/ASLTFG -0004gOQ 4b750flfl D005fl51 1EC07-10-JAN96

    HYM532214A

    Abstract: No abstract text available
    Text: HYM532214A E-Series •HYUNDAI 2M x 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532214A is a 2M x 32-bit EDO mode CMOS DRAM module consisting of four HY5117804B in 28/28 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 nF and 0.01 decoupling capacitors are mounted


    OCR Scan     		PDF HYM532214A 32-bit HY5117804B HYM532214AE/ASLE/ATE/ASLTE HYMS32214AEG/ASLEG/ATEG/ASLTEG R0n62 XW137 W10161

    Untitled

    Abstract: No abstract text available
    Text: » H Y U N D A I H Y M 5 6 4 2 1 4 A F - S e r ie s Unbuffered 2M x 64-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION The HYM564214A is a 2M x 64-bit EDO mode CMOS DRAM module consisting of eight HY5117804B in 28/28 SOJ


    OCR Scan     		PDF 64-bit HYM564214A HY5117804B HYM564214AFG/ATFG/ASLFG/ASLTFG of16M /-0004f2 S41MIN. -004M 4b750flfl

    Untitled

    Abstract: No abstract text available
    Text: •«HYUNDAI HYM564414A F-Series Unbuffered 4M x 64-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION The HYM564414A is a 4M x 64-bit EDO m ode CMOS DRAM m odule consisting of sixteen HY5117804B in 28 28 SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 uF and 0.01 uF


    OCR Scan     		PDF HYM564414A 64-bit HY5117804B HYM564414AFG 1EC07-10-J 100CS4

    HY5117800BT

    Abstract: No abstract text available
    Text: - K Y U H O A I HY5117804B,HY5116804B 2Mx8, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


    OCR Scan     		PDF HY5117804B HY5116804B A0-A11) HY5117800BT

    Untitled

    Abstract: No abstract text available
    Text: •«HYUNDAI HYM572A214A F-Series Unbuffered 2M x 72-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION The HYM572A214A is a 2M x 72-bit EDO m ode CMOS DRAM m odule consisting of nine HY5117804B in 28.28 SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 mF and 0.01 mF


    OCR Scan     		PDF HYM572A214A 72-bit HY5117804B HYM572A214AFG A0-A10) CAS0-CA57) DQ0-DQ71) 1EC07-10-JAN96

    Untitled

    Abstract: No abstract text available
    Text: «flY U H D IM • HYM532214C E-Series 2Mx32 bit EDO DRAM MODULE based on 2Mx8 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532214C E-Series is a 2Mx32-bit Extended Data Out mode CMOS DRAM m odule consisting of four HY5117804C in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1 uF and 0.01 uF


    OCR Scan     		PDF HYM532214C 2Mx32 2Mx32-bit HY5117804C HYM532214CE HYM532214CEG 72-Pin 256ms 16-bit

    52CAE

    Abstract: HY5117804
    Text: •«HYUNDAI HYM572A414A F-Series Unbuffered 4M x 72-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM572A414A is a 4M x 72-bit EDO m ode CMOS DRAM m odule consisting of eighteen HY5117804B in 28/28 SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 nF and 0.01 nF


    OCR Scan     		PDF HYM572A414A 72-bit HY5117804B HYM572A414AFG/ATFG/ASLFG/ASLTFG A0-A10) DQ0-DQ71) 1EC07-10-JAN96 52CAE HY5117804

    Untitled

    Abstract: No abstract text available
    Text: -HYUHDWP • HYM532214A E-Series 2Mx32 bit EDO DRAM MODULE based on 2Mx8 DRAM, SV, 2K-Refresh GENERAL DESCRIPTION The HYM532214A E-Series is a 2Mx32-bit Extended Data Out mode C M O S DRAM module consisting of four HY5117804B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1 nF and 0.01 ¡iF


    OCR Scan     		PDF HYM532214A 2Mx32 2Mx32-bit HY5117804B HYM532214AE HYM532214AEG 72-Pin 256ms

    Untitled

    Abstract: No abstract text available
    Text: < < 3 < 3 Y IIIID A I - ^ • HYM564214A H-Series 4Mx64-blt CMOS ORAM MODULE with EXTENDED DATA OUT J GENERAL DESCRIPTION The HYM 564214A H-Series is a 2M x64-bit Extended Data O ut mode CM OS DRAM m odule consisting of eight HY5117804B in 28 pin SOJ or TSOPII and tw o 16-bit BiCMOS line driver in TSSO P on a 168 pin


    OCR Scan     		PDF HYM564214A 4Mx64-blt 64214A x64-bit HY5117804B 16-bit HYM564214AHG 168-Pin 2Mx64

    HY5117804B

    Abstract: 5117804b HY5117804
    Text: HYUNDAI HY5117804B>HY51168046 2M X 8-bit CMOS DRAM with Extended Data Out DESCRIPTION ORDERING INFORMATION T his fa m ily is a 16M bit dynam ic RAM organized 2,097,152 x 8-bit configuration with Extended Data O ut n o d e CM O S DRAMs. Extended Data O ut m ode


    OCR Scan     		PDF HY5117804B HY51168046 HY5117804BJ HY5117804BSLJ HY5117804BT HY5117804BSLT HY5116804BJ HY5116804BSLJ Y5116804BT HY5116804BSLT 5117804b HY5117804

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI HYM532214A E-Series 2M x 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM 532214Ais a 2M x 32-bit EDO mode CMOS DRAM m odule consisting of four HY5117804B in 28/28 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 jFand 0.01 nF decoupling capacitors are mounted


    OCR Scan     		PDF HYM532214A 32-bit 532214Ais HY5117804B HYM532214AE/ASLE/ATE/ASLTE HYM532214AEG/ASLEG/ATEG/ASLTEG 12S-/-0 OOS11DI* 25IMAX

    Untitled

    Abstract: No abstract text available
    Text: •'H Y U N D A I HYM572A214A F-Series Unbuffered 2M x 72-bit CMOS DRAM MODULE with EXTENDED DATA OUT _ DESCRIPTION The HYM572A214A is a 2M x 72-bit EDO m ode CMOS DRAM m odule consisting of nine HY5117804B in 28/28 SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 jF and 0.01 nF


    OCR Scan     		PDF HYM572A214A 72-bit HY5117804B HYM572A214AFG/ATFG/ASLFG/ASLTFG 100ffi 12S0171MIN 1EC07-10-J

    Untitled

    Abstract: No abstract text available
    Text: 'HYUNDAI HYM564214A F-Series Unbuffered 2M x 64-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION The HYM564214A is a 2M x 64-bit EDO mode CMOS DRAM module consisting of eight HY5117804B in 28/28 SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 nF and 0.01 ^d e c o u p lin g


    OCR Scan     		PDF HYM564214A 64-bit HY5117804B HYM564214AFG/ATFG/ASLFG/ASLTFG of16M A0-A10) CA50-CA57) DQ0-DQ63)

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI H Y 5 1 17 8 0 4 B ,H Y 5 1 16 8 0 4 B 2Mx8, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


    OCR Scan     		PDF

    1MX16BIT

    Abstract: 16MX1
    Text: 'H Y U N D A I TABLE OF CONTENTS 1. TABLE OF CONTENTS In d e x . 1 2. PRODUCT QUICK REFERENCE


    OCR Scan     		PDF 256Kx4-bit, 1MX16BIT 16MX1

    H52M

    Abstract: No abstract text available
    Text: •HYUNDAI HYM5V64414A F-Series 4M x 64-bit CMOS DRAM MODULE Unbuffered with EXTENDED DATA OUT DESCRIPTION The HYM5V64414A is a 4M x 64-bit EDO mode CMOS DRAM m odule consisting of sixteen HY51 Vi 7804B in 28 28 SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pm glass-epoxy printed circuit board 0 1u F and 0 01 uF


    OCR Scan     		PDF HYM5V64414A 64-bit 7804B HYM5V64414AFG DQ0-DQ63) 1EC07-10-JAN96 H52M

    HYM532814

    Abstract: HY531000AJ HYM532224 hy5118160bjc HYM532214AE60 HY5118160 HYM536A814BM HYM536100AM HY51178048J HY5118160JC
    Text: QUICK REFERENCE SIMM MODULE 5V SIMM TYPE SIZE 72 Pin 4MB DESCRIPTION 1M X 32 8 IM M 1Mx36 8M B 2M 2M 16MB 4M 4M 32M B 8M 8M NO TE : 4 X X X X X X 32 36 32 36 32 36 PART NO. SPEED REF. DEVICE USED HEIGHT EDO, S L HYM532124AW/ATW 60/70/80 IK HY5118164BUC/BTC x 2


    OCR Scan     		PDF HYM532124AW/ATW 532100AM HYM532120W/TW HYMS32120AW/ATW HY5118164BUC/BTC HY514400AJ HY5118160JC/TC HY5118160BJC/BTC HY531000AJ HYM532814 HYM532224 hy5118160bjc HYM532214AE60 HY5118160 HYM536A814BM HYM536100AM HY51178048J HY5118160JC