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    27271SL Search Results

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    27271SL Price and Stock

    Johanson Manufacturing 27271SL

    CAP TRIMMER 0.6-4.5PF 500V SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 27271SL Bulk 690 1
    • 1 $31.68
    • 10 $23.779
    • 100 $19.5583
    • 1000 $17.83854
    • 10000 $17.83854
    		Buy Now

    Knowles Corporation 27271SL

    Trimmer / Variable Capacitors 0.6 - 4.5PF 500V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 27271SL 36
    • 1 $29.52
    • 10 $23.78
    • 100 $19.55
    • 1000 $19.49
    • 10000 $19.49
    		Buy Now

    Johanson Dielectrics Inc R27271SL

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics R27271SL 11 1
    • 1 $21.6
    • 10 $21.6
    • 100 $21.6
    • 1000 $21.6
    • 10000 $21.6
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    27271SL Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    27271SL Johanson Manufacturing WORKING VOLTAGE: 500 VDC (1000 V Original PDF

    27271SL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PC24J4R5

    Abstract: Johanson 27273 PC24K080 PC24J1R2 transistor 38W P4446 27261SL johanson 8762 27281SL pc21j4r5
    Text: Giga-Trim Selection Guide Click on the Part Number for Line Drawing Johanson P/N Capacitance Range pF 17273 0.6 to 4.5 27261 27261SL 27263 0.3 to 1.2 27264 27265 27271 27271SL 27273 0.6 to 4.5 27274 27275 27281 27281SL 27283 0.4 to 2.5 27284 27285 27291


    Original     		PDF 27261SL 27271SL 27281SL 27291SL 100MHz 200MHz PC24J4R5 Johanson 27273 PC24K080 PC24J1R2 transistor 38W P4446 27261SL johanson 8762 27281SL pc21j4r5

    330 j73 Tantalum Capacitor

    Abstract: j3076 100B100JCA500X 567 tone marking J6 transistors motorola marking pld-1.5 package 100B2R7CP500X z14 b marking 726 j68 marking us capacitor pf l1
    Text: Freescale Semiconductor Technical Data MW4IC001MR4 Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers MW4IC001NR4 MW4IC001MR4 The MW4IC001 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale’s newest


    Original     		PDF MW4IC001MR4 MW4IC001NR4 MW4IC001 MW4IC001NR4 330 j73 Tantalum Capacitor j3076 100B100JCA500X 567 tone marking J6 transistors motorola marking pld-1.5 package 100B2R7CP500X z14 b marking 726 j68 marking us capacitor pf l1

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF6S9045 Rev. 2, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF6S9045NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRF6S9045 MRF6S9045NR1/NBR1. MRF6S9045MR1 MRF6S9045MBR1 MRF6S9045MR1

    Untitled

    Abstract: No abstract text available
    Text: MRF6S19100H Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S19100HR3 MRF6S19100HSR3 Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S19100H 37ficers, MRF6S19100HR3 MRF6S19100HSR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF284 Rev. 15, 12/2004 RF Power Field Effect Transistors MRF284LR1 MRF284LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier


    Original     		PDF MRF284 MRF284LR1 MRF284LSR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9160H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier


    Original     		PDF MRFE6S9160H MRFE6S9160HR3 MRFE6S9160HSR3

    Untitled

    Abstract: No abstract text available
    Text: RFG1M09180 RFG1M09180 700MHZ to 1000MHZ 180W GaN 700MHZ TO 1000MHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features  Advanced GaN HEMT Technology  Typical Peak Modulated Power >240W  Advanced Heat Sink Technology  Single Circuit for 865MHz To


    Original     		PDF RFG1M09180 700MHZ 1000MHZ 1000MHZ RF400-2 865MHz 960MHz 47dBm

    100B201JT500XT

    Abstract: CRCW12063900FKEA 365 pF variable capacitor 100B120JT500XT GX0300-55-22 MRF282
    Text: Freescale Semiconductor Technical Data Document Number: MRF282-2 Rev. 17, 10/2008 RF Power Field Effect Transistor MRF282ZR1 Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and


    Original     		PDF MRF282--2 MRF282ZR1 458C-03, NI-200Z MRF282--2 100B201JT500XT CRCW12063900FKEA 365 pF variable capacitor 100B120JT500XT GX0300-55-22 MRF282

    Untitled

    Abstract: No abstract text available
    Text: RFG1M09090 700MHZ to 1000MHZ 90W GaN RFG1M09090 Proposed 700MHZ TO 1000MHZ 90W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advanced GaN HEMT Technology Typical Peak Modulated Power >120W Advanced Heat-Sink Technology


    Original     		PDF RFG1M09090 700MHZ 1000MHZ RFG1M09090 RF400-2 865MHz 960MHz 44dBm

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF284 Rev. 16, 5/2005 RF Power Field Effect Transistors MRF284LR1 MRF284LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier


    Original     		PDF MRF284 MRF284LR1 MRF284LSR1 MRF284

    ferroxcube for ferrite beads

    Abstract: MRF282
    Text: Freescale Semiconductor Technical Data Document Number: MRF282 Rev. 14, 5/2005 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and


    Original     		PDF MRF282 MRF282SR1 MRF282ZR1 MRF282 ferroxcube for ferrite beads

    8587

    Abstract: 100B120JP500X 100B2R7CP500X 100B3R3CP500X 100B430JP500X 100B4R7CP500X C1210C104K5RACTR MW4IC001MR4 RO4350 T491X226K035AS
    Text: MOTOROLA Order this document by MW4IC001MR4/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifier MW4IC001MR4 The MW4IC001MR4 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Motorola’s


    Original     		PDF MW4IC001MR4/D MW4IC001MR4 MW4IC001MR4 8587 100B120JP500X 100B2R7CP500X 100B3R3CP500X 100B430JP500X 100B4R7CP500X C1210C104K5RACTR RO4350 T491X226K035AS

    MRFE6S9200H

    Abstract: 465B A114 A115 AN1955 JESD22 MRFE6S9200HR3 MRFE6S9200HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9200H Rev. 0, 3/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		PDF MRFE6S9200H MRFE6S9200HR3 MRFE6S9200HSR3 MRFE6S9200H 465B A114 A115 AN1955 JESD22 MRFE6S9200HSR3

    EEEFK1H101P

    Abstract: A114 A115 AN1955 C101 JESD22 MRF6P18190HR6
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P18190H Rev. 2, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W - CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF6P18190H MRF6P18190HR6 EEEFK1H101P A114 A115 AN1955 C101 JESD22 MRF6P18190HR6

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S21100H Rev. 4, 12/2010 RF Power Field Effect Transistors MRF5S21100HR3 MRF5S21100HSR3 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF5S21100H MRF5S21100HR3 MRF5S21100HSR3 MRF5S21100H

    NIPPON CAPACITORS

    Abstract: capacitor mttf 100B120JP 100B180JP
    Text: Freescale Semiconductor Technical Data Rev. 2, 1/2005 RF Power Field Effect Transistors MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with


    Original     		PDF MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1 MRF5S9100NR1 NIPPON CAPACITORS capacitor mttf 100B120JP 100B180JP

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet May 2004 AGR09030E 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		PDF AGR09030E Hz--895 DS04-197RFPP DS04-149RFPP)

    MRF6S9045MR1

    Abstract: A113 A114 A115 AN1955 C101 JESD22 MRF6S9045 MRF6S9045MBR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9045 Rev. 2, 5/2006 Replaced by MRF6S9045NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRF6S9045 MRF6S9045NR1/NBR1. MRF6S9045MR1 MRF6S9045MBR1 A113 A114 A115 AN1955 C101 JESD22 MRF6S9045 MRF6S9045MBR1

    KME63VB471M12x25LL

    Abstract: transistors 5287 A114 A115 AN1955 C101 JESD22 MRF5S9150HR3 MRF5S9150HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S9150H Rev. 1, 5/2006 RF Power Field Effect Transistors MRF5S9150HR3 MRF5S9150HSR3 Designed for N - CDMA base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications.


    Original     		PDF MRF5S9150H MRF5S9150HR3 MRF5S9150HSR3 MRF5S9150HR3 KME63VB471M12x25LL transistors 5287 A114 A115 AN1955 C101 JESD22 MRF5S9150HSR3

    A114

    Abstract: AN1955 JESD22 MRF6S9160H MRF6S9160HR3 MRF6S9160HSR3 atc100b220j
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9160H Rev. 2, 8/2008 MRF6S9160HR3/HSR3 replaced by MRFE6S9160HR3/HSR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistors ARCHIVE INFORMATION Designed for N - CDMA, GSM and GSM EDGE base station applications


    Original     		PDF MRF6S9160H MRF6S9160HR3/HSR3 MRFE6S9160HR3/HSR3. PCN12895 MRF6S9160HR3 MRF6S9160HSR3 A114 AN1955 JESD22 MRF6S9160H MRF6S9160HSR3 atc100b220j

    Untitled

    Abstract: No abstract text available
    Text: 27270, 47270 Series Giga-Trim .6 to 4.5 pF . 14 0 K - .118 0 "7 ADJUSTING SLOT . 0 1 5W X . 0 7 8 • ADJUSTING SLOT . 0 1 5W X .0 7 8 27271SL *PC22J4R5 27271 *PC21 J4R5 27274 PC23J4R5 Capacitance Range .6 to 4.5 pF Working Voltage 500 VDC Temperature Coefficient


    OCR Scan     		PDF 27271SL PC22J4R5 PC23J4R5 Mil-C-14409

    Johanson 27273

    Abstract: PC24J4R5
    Text: Giga-Trim Capacitor Selection Guide Johanson P/N Dielectric .6 to 4.5 >8 500 Alumina 500 Sapphire Sapphire Sapphire Sapphire Sapphire 17273 27261 27261SL 27263 27264 27265 27271 27271SL 27273 27274 27275 27281 27281SL 27283 27284 27285 27291 27291SL 27293


    OCR Scan     		PDF 27261SL 27271SL 27281SL 27291SL 5001J1R2 PC21J2R5 PC22J1R2 PC22J2R5 Johanson 27273 PC24J4R5

    Untitled

    Abstract: No abstract text available
    Text: Giga-Trim Capacitor Selection Guide 27261 27261SL 27263 27264 27265 27271 27271SL 27273 27274 27275 27281 27281SL 27283 27284 27285 .3 to 1.2 >5 PC21J1R2 PC22J1R2 PC24J1R2 PC23J1R2 500 0 ± 50 .1-1 >5000 21 0 ± 50 .2-2 >3000 22 0 ± 50 .2-2 >4000 23 0 ± 75


    OCR Scan     		PDF 27261SL 27271SL 27281SL PC21J1R2 PC22J1R2 PC24J1R2 PC23J1R2 PC21J4R5 PC22J4R5 PC24J4R5

    k 1225 data

    Abstract: mosfet k 1225 transistor tt 2170 100B104JCA50X RF chip 81 210 W 20 IMO TDMA TT 2170 MRF21125 MRF21125S
    Text: MOTOROLA O rder this docum ent by M RF21125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line MRF21125 MRF21125S RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W -C D M A base station applications at frequencies from 2110


    OCR Scan     		PDF MRF21125/D 465C-01 MRF21125S) MRF21125 MRF21125S k 1225 data mosfet k 1225 transistor tt 2170 100B104JCA50X RF chip 81 210 W 20 IMO TDMA TT 2170 MRF21125S