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    27281SL Search Results

    27281SL Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    27281SL Johanson Manufacturing Trimmer Capacitor Original PDF

    27281SL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PC24J4R5

    Abstract: Johanson 27273 PC24K080 PC24J1R2 transistor 38W P4446 27261SL johanson 8762 27281SL pc21j4r5
    Text: Giga-Trim Selection Guide Click on the Part Number for Line Drawing Johanson P/N Capacitance Range pF 17273 0.6 to 4.5 27261 27261SL 27263 0.3 to 1.2 27264 27265 27271 27271SL 27273 0.6 to 4.5 27274 27275 27281 27281SL 27283 0.4 to 2.5 27284 27285 27291


    Original     		PDF 27261SL 27271SL 27281SL 27291SL 100MHz 200MHz PC24J4R5 Johanson 27273 PC24K080 PC24J1R2 transistor 38W P4446 27261SL johanson 8762 27281SL pc21j4r5

    J161 mosfet transistor

    Abstract: MOSFET J161 100B6R8JW
    Text: Preliminary Data Sheet July 2003 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21090E AGR21090EU AGR21090EF DS03-070RFPP DS02-276RFPP) J161 mosfet transistor MOSFET J161 100B6R8JW

    Untitled

    Abstract: No abstract text available
    Text: gigatrim = [ \ \ \ \_n[ZYWfWY_jehi$


    Original     		PDF 27261SL 27281SL 27283-3R10 27271SL 27291SL

    "RF Power Transistor"

    Abstract: AGR18030EF JESD22-C101A transistor equivalent table 557
    Text: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication


    Original     		PDF AGR18030EF AGR18030EF 21045F "RF Power Transistor" JESD22-C101A transistor equivalent table 557

    TF800BB14-061

    Abstract: P1999 8051 microwave oven ec 9410 cf K 2676 9343-11R1 TF800BA14-061 2320-1SL 9816SL 9410-3SL-1
    Text: < ] ^  _dZkijho$@e^Wdied^Wibed]X[[dh[Ye]d_p[ZWiW $ J^[jhWZ_j_edYedj_dk[i°


    Original     		PDF JK-943L 9343-11R1 9343-12R1 9343-13R1 9343-14R1 9343-16R1 9343-18R1 JK-943H TF800BB14-061 P1999 8051 microwave oven ec 9410 cf K 2676 9343-11R1 TF800BA14-061 2320-1SL 9816SL 9410-3SL-1

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet November 2003 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused, metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21090E AGR21090EU AGR21090EF DS04-018RFPP DS03-070RFPP)

    J299

    Abstract: No abstract text available
    Text: Preliminary Data Sheet December 2003 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused, metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21090E AGR21090EU AGR21090EF DS04-059RFPP DS04-018RFPP) J299

    AGR21090E

    Abstract: AGR21090EF JESD22-C101A mosfet 6 ghz
    Text: AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused, metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21090E AGR21090E AGR21090EU AGR21090EF 1090EF AGR21090XF M-AGR21090F 12-digit AGR21090EF JESD22-C101A mosfet 6 ghz

    mrf5s21090

    Abstract: Nippon capacitors
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S21090H Rev. 3, 10/2008 RF Power Field Effect Transistors MRF5S21090HR3 MRF5S21090HSR3 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF5S21090H MRF5S21090HR3 MRF5S21090HSR3 MRF5S21090H mrf5s21090 Nippon capacitors

    transistor equivalent table 557

    Abstract: 21045F
    Text: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication


    Original     		PDF AGR18030EF DS04-204RFPP PB04-101RFPP) transistor equivalent table 557 21045F

    AGR21090

    Abstract: mosfet j460 AGR21090E AGR21090EF JESD22-C101A mosfet J442 100b6r8 100B8 100B6R8JW
    Text: Preliminary Data Sheet April 2004 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused, metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21090E AGR21090E AGR21090EU AGR21090EF DS04-165RFPP DS04-059RFPP) AGR21090 mosfet j460 AGR21090EF JESD22-C101A mosfet J442 100b6r8 100B8 100B6R8JW

    AGR18030EF

    Abstract: JESD22-C101A
    Text: Preliminary Data Sheet November 2004 AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication


    Original     		PDF AGR18030EF AGR18030EF DS04-204RFPP PB04-101RFPP) JESD22-C101A

    27271SL

    Abstract: 27281SL 27273 27261SL 27291 17273 27293 57283-1 27291SL
    Text: gigatrim = [ \ \ \ \_n[ZYWfWY_jehi$


    Original     		PDF 27261SL 27281SL 27271SL 27291SL 27271SL 27281SL 27273 27261SL 27291 17273 27293 57283-1 27291SL

    AN1955

    Abstract: ATC100B2R0BT500XT ATC100B9R1CT500XT MRF5S21090H MRF5S21090HR3 MRF5S21090HSR3 mrf5s21090 D2426 Nippon capacitors
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S21090H Rev. 3, 10/2008 N-Channel Enhancement-Mode Lateral MOSFETs MRF5S21090HR3 MRF5S21090HSR3 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF5S21090H MRF5S21090HR3 MRF5S21090HSR3 MRF5S21090HR3 AN1955 ATC100B2R0BT500XT ATC100B9R1CT500XT MRF5S21090H MRF5S21090HSR3 mrf5s21090 D2426 Nippon capacitors

    Johanson 27273

    Abstract: PC24J4R5
    Text: Giga-Trim Capacitor Selection Guide Johanson P/N Dielectric .6 to 4.5 >8 500 Alumina 500 Sapphire Sapphire Sapphire Sapphire Sapphire 17273 27261 27261SL 27263 27264 27265 27271 27271SL 27273 27274 27275 27281 27281SL 27283 27284 27285 27291 27291SL 27293


    OCR Scan     		PDF 27261SL 27271SL 27281SL 27291SL 5001J1R2 PC21J2R5 PC22J1R2 PC22J2R5 Johanson 27273 PC24J4R5

    Untitled

    Abstract: No abstract text available
    Text: Giga-Trim Capacitor Selection Guide 27261 27261SL 27263 27264 27265 27271 27271SL 27273 27274 27275 27281 27281SL 27283 27284 27285 .3 to 1.2 >5 PC21J1R2 PC22J1R2 PC24J1R2 PC23J1R2 500 0 ± 50 .1-1 >5000 21 0 ± 50 .2-2 >3000 22 0 ± 50 .2-2 >4000 23 0 ± 75


    OCR Scan     		PDF 27261SL 27271SL 27281SL PC21J1R2 PC22J1R2 PC24J1R2 PC23J1R2 PC21J4R5 PC22J4R5 PC24J4R5

    Untitled

    Abstract: No abstract text available
    Text: Giga-Trim Series Figure 3 Dimensions: inches Cap Rjwgs pF m - : A ' - *' c D s (f ' 3 1.2 4 2.5 6 4.5 . 8 - 8.0 27261 27281 27271 27291 0.225 0.225 0.314 0.480 0.075 0.118 0.118 0.118 0.23 0.23 0.23 0.23 0.08 0.08 0.13 0.25 0.04 0.04 0.04 0.04 0.094 0.14


    OCR Scan     		PDF 261SL 27281SL 27271SL 27291SL

    MVM010

    Abstract: MURATA mvm010 PC26T140 PC26J300 PC24J4R5 MVM010W GHC11000 mav03 pc28j3r5 CDR21BG
    Text: Configuration Microelectronics Johanson Vottro -nics Tronser MIL Designation Tekelec II n MTR02X YV 1 1 MTR12X MTR22X l i MTR32X «E». a w MTR42X ea H i U t MTR52X MTR021 MTR121 MTR221 MTR321 MTR421 MTR521 27260 27261 27261SL 27264 27265 27263 P1A P1B P1J


    OCR Scan     		PDF MTR021 MTR121 MTR221 MTR321 MTR421 MTR521 MTR921 MTR022 MTR122 MTR222 MVM010 MURATA mvm010 PC26T140 PC26J300 PC24J4R5 MVM010W GHC11000 mav03 pc28j3r5 CDR21BG

    PC24J2R5

    Abstract: JMC 27284
    Text: JOHANSON MANUFACTURING 44E » B DOOOSbB M B ç>Ç- %Z - C>Ç <^$4aM »t£> Tfp<§ .4 to 2.5pF 1?; a s .8 to 8pF ¿T ' GIGA-TRIM CAPACITORS J M C P/N M IL S P E C RANGE PF TC PPM /°C GIGA-TRIM® CAPACITORS M IN. Q @ 250 M H z D IM E N SIO N S IN CHES ADJUSTING


    OCR Scan     		PDF 27281SL PC22J2R5 PC21J2R5 PC24J2R5 PC23J2RS FAX-201-334-2954 PC24J2R5 JMC 27284