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    100B180JP Search Results

    100B180JP Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    100B180JP500XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 18PF 500V P90 1111 Original PDF
    100B180JP500XT1K American Technical Ceramics Ceramic Capacitor 18PF 500V P90 1111 Original PDF

    100B180JP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C8450

    Abstract: MRF5S4140H
    Text: Document Number: MRF5S4140H Rev. 1, 1/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these


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    PDF MRF5S4140H 28-volt MRF5S4140HR3 MRF5S4140HSR3 MRF5S4140H C8450

    A113

    Abstract: A114 A115 AN1955 C101 JESD22 MRF5S9070NR1 MRF5S9070NR
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S9070NR1 Rev. 6, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S9070NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


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    PDF MRF5S9070NR1 A113 A114 A115 AN1955 C101 JESD22 MRF5S9070NR1 MRF5S9070NR

    NIPPON CAPACITORS

    Abstract: capacitor mttf 100B120JP 100B180JP
    Text: Freescale Semiconductor Technical Data Rev. 2, 1/2005 RF Power Field Effect Transistors MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with


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    PDF MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1 MRF5S9100NR1 NIPPON CAPACITORS capacitor mttf 100B120JP 100B180JP

    UHF TRANSISTOR

    Abstract: J152-ND J151-ND RF MOSFET CLASS AB Coaxicom transistor SMD g 28 100B100JP500X RC1206JR-07100KL smd transistor 259 4404 mosfet
    Text: The innovative Semiconductor Company! HVV0405-175 HIGH VOLTAGE, HIGH RUGGEDNESS UHF Pulsed Power Transistor 420-470 MHz, 300µs Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications TM FEATURES • Silicon MOSFET Technology • Operation from 24V to 50V


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    PDF HVV0405-175 429-HVVi EG-01-DS10B 05/XX/09 UHF TRANSISTOR J152-ND J151-ND RF MOSFET CLASS AB Coaxicom transistor SMD g 28 100B100JP500X RC1206JR-07100KL smd transistor 259 4404 mosfet

    J0743

    Abstract: MRF5S4140H j0810 100B121JP500X A114 A115 AN1955 C101 JESD22 MRF5S4140HR3
    Text: Document Number: MRF5S4140H Rev. 2, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these


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    PDF MRF5S4140H MRF5S4140HR3 MRF5S4140HSR3 28-volt MRF5S4140HR3 J0743 MRF5S4140H j0810 100B121JP500X A114 A115 AN1955 C101 JESD22

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S9070NR1 Rev. 4, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9070NR1 MRF5S9070MR1 Designed for broadband commercial and industrial applications with


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    PDF MRF5S9070NR1 MRF5S9070MR1 MRF5S9070NR1

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF5S9100 Rev. 4, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF5S9100NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


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    PDF MRF5S9100 MRF5S9100NR1/NBR1. MRF5S9100MR1 MRF5S9100MBR1 MRF5S9100MR1

    hatching machine

    Abstract: NIPPON CAPACITORS A113 AN1955 MRF5S9100MBR1 MRF5S9100MR1 MRF5S9100NBR1 MRF5S9100NR1
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S9100/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Freescale Semiconductor, Inc. MRF5S9100NR1 RF Power Field Effect Transistors MRF5S9100NBR1 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9100MR1


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    PDF MRF5S9100/D MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1 MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 hatching machine NIPPON CAPACITORS A113 AN1955 MRF5S9100MBR1

    AN1955

    Abstract: MRF5S9070NR1 T491D106K035AS 272915l crcw12065603f100 MRF5S9070NR
    Text: MOTOROLA Order this document by MRF5S9070NR1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S9070NR1 Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of this


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    PDF MRF5S9070NR1/D MRF5S9070NR1 AN1955 MRF5S9070NR1 T491D106K035AS 272915l crcw12065603f100 MRF5S9070NR

    hatching machine

    Abstract: NIPPON CAPACITORS AVG26 100B180JP MARKING WB1 A114 A115 AN1955 C101 MRF5S9100
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S9100 Rev. 3, 7/2005 RF Power Field Effect Transistors MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with


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    PDF MRF5S9100 MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1 MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 hatching machine NIPPON CAPACITORS AVG26 100B180JP MARKING WB1 A114 A115 AN1955 C101 MRF5S9100

    NIPPON CAPACITORS

    Abstract: A113 A114 A115 AN1955 C101 JESD22 MRF5S9100NBR1 MRF5S9100NR1 ACPR25
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S9100N Rev. 5, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9100NR1 MRF5S9100NBR1 Designed for broadband commercial and industrial applications with


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    PDF MRF5S9100N MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100NR1 NIPPON CAPACITORS A113 A114 A115 AN1955 C101 JESD22 MRF5S9100NBR1 ACPR25

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF5S9100N Rev. 5, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9100NR1 MRF5S9100NBR1 Designed for broadband commercial and industrial applications with


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    PDF MRF5S9100N MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100NR1

    MRF5S9070NR1

    Abstract: marking us capacitor pf l1 A113 A114 A115 AN1955 C101 JESD22 crcw12065603f100 MRF5S9070MR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S9070MR1 Rev. 5, 5/2006 Replaced by MRF5S9070NR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


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    PDF MRF5S9070MR1 MRF5S9070NR1. MRF5S9070NR1 marking us capacitor pf l1 A113 A114 A115 AN1955 C101 JESD22 crcw12065603f100 MRF5S9070MR1

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF5S9070NR1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S9070NR1 Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of this


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    PDF MRF5S9070NR1/D MRF5S9070NR1

    MRF5S4140H

    Abstract: No abstract text available
    Text: Document Number: MRF5S4140H Rev. 0, 1/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these


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    PDF MRF5S4140H MRF5S4140HR3 MRF5S4140HSR3 28-volt MRF5S4140HR3 MRF5S4140H

    DATUM

    Abstract: MRF5S9070NR
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S9070NR1 Rev. 4, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9070NR1 MRF5S9070MR1 Designed for broadband commercial and industrial applications with


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    PDF MRF5S9070NR1 MRF5S9070MR1 MRF5S9070NR1 DATUM MRF5S9070NR

    MRF5S9070NR

    Abstract: No abstract text available
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S9070NR1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET MRF5S9070NR1 Designed for broadband commercial and industrial applications with


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    PDF MRF5S9070NR1/D MRF5S9070NR1 MRF5S9070NR

    MRF5S4140H

    Abstract: No abstract text available
    Text: Document Number: MRF5S4140H Rev. 2, 5/2006 Freescale Semiconductor Technical Data N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these


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    PDF MRF5S4140H MRF5S4140HR3 MRF5S4140HSR3 28-volt MRF5S4140HR3 MRF5S4140H

    22 pf capacitor datasheet

    Abstract: 100B121JP500X A114 A115 AN1955 C101 JESD22 MRF5S4140HR3 MRF5S4140HSR3 J0743
    Text: RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these


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    PDF MRF5S4140HR3 MRF5S4140HSR3 28-volt MRF5S4140HR3 MRF5S4140H 22 pf capacitor datasheet 100B121JP500X A114 A115 AN1955 C101 JESD22 MRF5S4140HSR3 J0743

    j0810

    Abstract: J0743 j0249 100b1r5jp500x J0313
    Text: Document Number: MRF5S4140H Rev. 2, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of


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    PDF MRF5S4140H 28--volt IS--95 MRF5S4140HR3 MRF5S4140HSR3 MRF5S4140H j0810 J0743 j0249 100b1r5jp500x J0313

    Philips 4312 020

    Abstract: BLV25 Philips 2222 ferrite fxc3b fxc3b PHILIPS 4312 blw 64 rf transistor PHILIPS 4312 amplifier philips rf choke ferrite 151 schematic for 88 to 108 amplifier
    Text: APPLICATION NOTE Wideband 300 W push-pull FM amplifier using BLV25 transistors AN98031 Philips Semiconductors Wideband 300 W push-pull FM amplifier using BLV25 transistors CONTENTS 1 INTRODUCTION 2 AMPLIFIER DESIGN THEORY 2.1 2.2 2.3 The output network The input network


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    PDF BLV25 AN98031 BLV25 BLW86 SCA57 Philips 4312 020 Philips 2222 ferrite fxc3b fxc3b PHILIPS 4312 blw 64 rf transistor PHILIPS 4312 amplifier philips rf choke ferrite 151 schematic for 88 to 108 amplifier

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF5S9070MR1 Rev. 5, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF5S9070NR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


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    PDF MRF5S9070MR1 MRF5S9070NR1.

    NIPPON CAPACITORS

    Abstract: No abstract text available
    Text: MRF5S9100 Rev. 2, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with


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    PDF MRF5S9100 MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1 NIPPON CAPACITORS

    NIPPON CAPACITORS

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S9100 Rev. 3, 7/2005 RF Power Field Effect Transistors MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with


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    PDF MRF5S9100 MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1 MRF5S9100 NIPPON CAPACITORS