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    MRFE6S9160HR3 Search Results

    MRFE6S9160HR3 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MRFE6S9160HR3 Freescale Semiconductor HV6E 900MHZ 160W NI780H Original PDF

    MRFE6S9160HR3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A114

    Abstract: AN1955 JESD22 MRF6S9160H MRF6S9160HR3 MRF6S9160HSR3 atc100b220j
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9160H Rev. 2, 8/2008 MRF6S9160HR3/HSR3 replaced by MRFE6S9160HR3/HSR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistors ARCHIVE INFORMATION Designed for N - CDMA, GSM and GSM EDGE base station applications


    Original     		PDF MRF6S9160H MRF6S9160HR3/HSR3 MRFE6S9160HR3/HSR3. PCN12895 MRF6S9160HR3 MRF6S9160HSR3 A114 AN1955 JESD22 MRF6S9160H MRF6S9160HSR3 atc100b220j

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9160H Rev. 2, 8/2008 MRF6S9160HR3/HSR3 replaced by MRFE6S9160HR3/HSR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistors MRF6S9160HR3 MRF6S9160HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications


    Original     		PDF MRF6S9160H MRF6S9160HR3/HSR3 MRFE6S9160HR3/HSR3. PCN12895 MRF6S9160HR3 MRF6S9160HSR3 MRF6S9160HR3

    A114

    Abstract: AN1955 JESD22 MRF6S9160H MRF6S9160HR3 MRF6S9160HSR3 ALT101
    Text: Freescale Semiconductor Technical Data MRF6S9160HR3/HSR3 replaced by MRFE6S9160HR3/HSR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistors MRF6S9160HR3 MRF6S9160HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and GSM EDGE base station applications


    Original     		PDF MRF6S9160HR3/HSR3 MRFE6S9160HR3/HSR3. PCN12895 MRF6S9160HR3 MRF6S9160HSR3 MRF6S9160HR3 MRF6S9160H A114 AN1955 JESD22 MRF6S9160H MRF6S9160HSR3 ALT101

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9160H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier


    Original     		PDF MRFE6S9160H MRFE6S9160HR3 MRFE6S9160HSR3

    power transistors table

    Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL
    Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 34 6/2008 RF Product Selector Guide Offering a broad portfolio of RF products, Freescale Semiconductor primarily serves the wireless infrastructure, wireless subscriber, general purpose amplifier, broadcast and industrial markets. Freescale pioneered RF technology and continues to be the leader in the field by providing the quality,


    Original     		PDF

    MRF8P9040N

    Abstract: rf Amplifier mhz Doherty 470-860 MRF1513NT1 s2p MRF8S21100H MRF8S21100HS MRF8S9220HR3 AN1643 MRF6P23190H MRF8S9170NR3 MW6S004NT1
    Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 35.1 5/2010 RF Product Selector Guide Freescale Semiconductor offers a comprehensive portfolio of RF products, primarily serving the cellular infrastructure, general purpose amplifier, broadcast, aerospace and industrial


    Original     		PDF

    A114

    Abstract: A115 AN1955 C101 JESD22 MRFE6S9160HR3 MRFE6S9160HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9160H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier


    Original     		PDF MRFE6S9160H MRFE6S9160HR3 MRFE6S9160HSR3 A114 A115 AN1955 C101 JESD22 MRFE6S9160HSR3

    ATC100B220JT500

    Abstract: A114 A115 AN1955 ATC100B470JT500XT C101 JESD22 MRFE6S9160HR3 MRFE6S9160HSR3 atc100b220j
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9160H Rev. 0, 3/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier


    Original     		PDF MRFE6S9160H MRFE6S9160HR3 MRFE6S9160HSR3 ATC100B220JT500 A114 A115 AN1955 ATC100B470JT500XT C101 JESD22 MRFE6S9160HSR3 atc100b220j