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    25N80 Search Results

    25N80 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    SiT8008BI-21-25N-8.000000 SiTime 1 to 110 MHz, Low Power Oscillator Datasheet
    SiT8008BC-22-25N-80.000000 SiTime 1 to 110 MHz, Low Power Oscillator Datasheet
    SiT8920BMA81-25N-8.000000 SiTime 1 to 110 MHz, Wide Temperature Oscillator (-55 to +125°C) Datasheet
    SiT8008BIA81-25N-8.000000 SiTime 1 to 110 MHz, Low Power Oscillator Datasheet
    SF Impression Pixel

    25N80 Price and Stock

    Rochester Electronics LLC UC2825N-80709

    UC2825 SWITCHING CONTROLLER
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    DigiKey UC2825N-80709 Bulk 12,741 258
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    STMicroelectronics STP25N80K5

    MOSFET N-CH 800V 19.5A TO220
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    STMicroelectronics STB25N80K5

    MOSFET N-CH 800V 19.5A D2PAK
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    STB25N80K5 Cut Tape 618 1
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    STB25N80K5 Reel 1,000
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    Mouser Electronics STB25N80K5 850
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    STMicroelectronics STW25N80K5

    MOSFET N-CH 800V 19.5A TO247
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    TME STW25N80K5 1
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    Win Source Electronics STW25N80K5 35,200
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    STMicroelectronics STF25N80K5

    MOSFET N-CH 800V 19.5A TO220FP
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    Avnet Silica STF25N80K5 950 15 Weeks 50
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    Find more 25N80 price and stock on Findchips.com

    25N80 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CoolMOS Power Transistor

    Abstract: POWER MOSFET 4600 UPS SIEMENS 25N80C
    Text: Power MOSFET ISOPLUS220TM IXKC 25N80C Electrically Isolated Back Surface Low RDS on , High Voltage, CoolMOSTM Superjunction MOSFET VDSS = 800 V ID25 = 20 A Ω RDS(on) = 150 mΩ Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF ISOPLUS220TM 25N80C E153432 065B1 728B1 123B1 CoolMOS Power Transistor POWER MOSFET 4600 UPS SIEMENS 25N80C

    Untitled

    Abstract: No abstract text available
    Text: Power MOSFET ISOPLUS220TM IXKC 25N80C Electrically Isolated Back Surface Low RDS on , High Voltage, CoolMOSTM Superjunction MOSFET VDSS = 800 V = 25 A ID25 Ω RDS(on) = 150 mΩ Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF ISOPLUS220TM 25N80C ISOPLUS220LV 728B1 065B1 123B1

    25N80C

    Abstract: No abstract text available
    Text: IXKC 25N80C COOLMOS * Power MOSFET ISOPLUSTM Package ID25 = 25 A VDSS = 800 V RDS on max = 150 mΩ N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface ISOPLUS220 D G G D S S E72873 Features MOSFET Symbol Conditions


    Original     		PDF 25N80C ISOPLUS220 E72873 25N80C

    27N80

    Abstract: 25n80 IXFK27N80 IXFN27N80 125OC
    Text: Not for New Designs VDSS HiPerFETTM Power MOSFETs IXFK IXFK IXFN IXFN N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 27N80 25N80 27N80 25N80 800 800 800 800 ID25 V V V V RDS on 27 A 25 A 27 A 25 A 0.30 0.35 0.30 0.35 Ω Ω Ω Ω TO-264 AA (IXFK)


    Original     		PDF 27N80 25N80 O-264 27N80 25N80 IXFK27N80 IXFN27N80 125OC

    IXKR25N80C

    Abstract: No abstract text available
    Text: IXKR 25N80C Advanced Technical Information COOLMOS * Power MOSFET ID25 = 25 A VDSS = 800 V RDS on = 125 mW in ISOPLUS247TM Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ISOPLUS 247TM D * G E153432


    Original     		PDF 25N80C 125mW 247TM ISOPLUS247TM E153432 ISOPLUS247 O-247 IXKR25N80C

    CoolMOS Power Transistor

    Abstract: ISOPLUS247 IXKR25N80C
    Text: Advanced Technical Information VDSS CoolMOS Power MOSFET in ISOPLUS247TM Package RDS on 25 A 125 mΩ Ω 800 V IXKR 25N80C N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ID25 D G *) S ISOPLUS 247TM E153432


    Original     		PDF ISOPLUS247TM 25N80C 247TM E153432 CoolMOS Power Transistor ISOPLUS247 IXKR25N80C

    power switching

    Abstract: ISO264 ISO264TM ID90
    Text: ADVANCE TECHNICAL INFORMATION CoolMOSTM Power MOSFET IXKG 25N80C ISO264TM Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VGS Continuous ±20


    Original     		PDF 25N80C ISO264TM 728B1 065B1 123B1 power switching ISO264 ISO264TM ID90

    25N80C

    Abstract: 25n80 E72873 mosfet b4
    Text: IXKC 25N80C CoolMOS 1 Power MOSFET ISOPLUSTM Package ID25 = 25 A VDSS = 800 V RDS on) max = 150 mΩ N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface D ISOPLUS220 G G D q S S isolated back surface E72873 Features


    Original     		PDF 25N80C ISOPLUS220 E72873 20080526a 25N80C 25n80 E72873 mosfet b4

    27N80

    Abstract: 25n80 IXFN27N80 IXFK27N80 125OC
    Text: HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol IXFK 27N80 IXFK 25N80 IXFN 27N80 IXFN 25N80 Test Conditions VDSS TJ = 25°C to 150°C 800 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 800 800 V VGS Continuous ±20


    Original     		PDF 27N80 25N80 O-264 27N80 25n80 IXFN27N80 IXFK27N80 125OC

    25N80C

    Abstract: "VDSS 800V" mosfet ISOPLUS247 25n80
    Text: IXKR 25N80C Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 25 A VDSS = 800 V RDS on) = 125 mW in ISOPLUS247™ Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ISOPLUS 247™ D G E153432


    Original     		PDF 25N80C 125mW ISOPLUS247TM 247TM E153432 20080526a 25N80C "VDSS 800V" mosfet ISOPLUS247 25n80

    25n8

    Abstract: No abstract text available
    Text: IXKC 25N80C CoolMOS 1 Power MOSFET ISOPLUSTM Package ID25 = 25 A VDSS = 800 V RDS on) max = 150 m N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface D ISOPLUS220 G G D fl S S isolated back surface E72873 Features


    Original     		PDF 25N80C ISOPLUS220 E72873 0080526a 20080526a 25n8

    27N80

    Abstract: U/25/20/TN26/15/850/25N80
    Text: Not for New Designs VDSS HiPerFETTM Power MOSFETs IXFK IXFK IXFN IXFN N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 27N80 25N80 27N80 25N80 800 800 800 800 ID25 V V V V RDS on 27 A 25 A 27 A 25 A 0.30 0.35 0.30 0.35 Ω Ω Ω Ω TO-264 AA (IXFK)


    Original     		PDF 27N80 25N80 O-264 27N80 25N80 U/25/20/TN26/15/850/25N80

    Untitled

    Abstract: No abstract text available
    Text: IXKR 25N80C Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 25 A VDSS = 800 V RDS on) = 125 mW in ISOPLUS247™ Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ISOPLUS 247™ D G G E53432


    Original     		PDF 25N80C ISOPLUS247â E153432 20080526a

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE TECHNICAL INFORMATION CoolMOS Power MOSFET ISOPLUS220TM IXKC 25N80C Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VGS Continuous


    Original     		PDF ISOPLUS220TM 25N80C 220TM

    Untitled

    Abstract: No abstract text available
    Text: 25N80K5, 25N80K5, 25N80K5, 25N80K5 N-channel 800 V, 0.19 Ω typ., 19.5 A SuperMESH 5 Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packages Datasheet − production data Features TAB Order codes 3 3 1 1 D2PAK 2 VDS @ TJmax RDS on max ID


    Original     		PDF STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5 O-220FP, O-220 O-247 STB25N80K5 O-220FP STF25N80K5

    C1162

    Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158

    sd 20n60

    Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
    Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


    Original     		PDF AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80

    M27N80

    Abstract: No abstract text available
    Text: VDSS HiPerFET Power MOSFETs IXFK 27N80 IXFK 25N80 IXFN 27N80 IXFN 25N80 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 800 V 800 V 800 V 800 V D DS on ^D25 27 25 27 25 A A A A 0.30 0.35 0.30 0.35 a £2 £2 ß TO-264 AA (IXFK) Symbol Test Conditions


    OCR Scan     		PDF 27N80 25N80 25N80 O-264 UL94V-0, M27N80

    IXFK27N80

    Abstract: IXFN27N80
    Text: nixYs v DSS HiPerFET Power MOSFETs IXFK 27N80 IXFK 25N80 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFN 27N80 IXFN 25N80 800 800 800 800 V V V V p ^D25 27 A 25 A 27 A 25 A DS on 0.30 0.35 0.30 0.35 a Q £2 a TO-264 AA (IXFK) Symbol


    OCR Scan     		PDF IXFK27N80 IXFK25N80 IXFN27N80 IXFN25N80 O-264 to150 27N80 25N80

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS VDSS HiPerFET Power MOSFETs 27N80 IXFK 25N80 IXFN 27N80 IXFN 25N80 ix f k N-Channel Enhancement Mode AvalancheRated, High dv/dt, Lowtrr 800 800 800 800 V V V V D ^D25 27 25 27 25 A A A A D S o n 0.30 0.35 0.30 0.35 Q Q Q Q TO -264A A (IX FK )


    OCR Scan     		PDF 27N80 25N80 -264A

    IXFN27N80

    Abstract: No abstract text available
    Text: HiPerFET Power MOSFETs IXFK IXFK IXFN IXFN N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Lowt^ 27N80 25N80 27N80 25N80 D v DSS ^D25 800 V 800V 800 V 800 V 27 A 25 A 27 A 25 A DS on 0.30 n 0.35 O 0.30 Q 0.35 O TO-264AA(IXFK) Symbol vw DSS Test Conditions


    OCR Scan     		PDF 27N80 25N80 25N80 O-264AA IXFN27N80

    ixys ixfn 55n50

    Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60
    Text: i , i - •*.*• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ | Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01


    OCR Scan     		PDF O-247 O-247 T0-204 O-264 O-264 76N06-11 75N06-12 110N06 76N07-11 76N07-12 ixys ixfn 55n50 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60

    wabash

    Abstract: 25N80A LHi 978 25n80 25N100 25N90 IXGH25N100 IXGH25N80 IXGH25N90 IXGM25N100
    Text: I X Y S LOKM " 03 4686226 I X Y S C O R P DE I 4bübddb UUUUddU Jj 03E 00220 D 25N80, 90, 100 25N80, 90, 100 25 AMPS, 800-1000 VOLTS MAXIMUM RATINGS Sym. 25N80 25N80 IXGH25N90 IXGM25N90 IXGH25N100 IXGM25N100 Unit Drain-Source Voltage 1 Vd ss


    OCR Scan     		PDF IXGH25N80, IXGM25N80, IXGH25N80 IXGM25N80 IXGH25N90 IXGH25N100 IXGM25N90 IXGM25N100 wabash 25N80A LHi 978 25n80 25N100 25N90