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    23C8100 Search Results

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    23C8100 Price and Stock

    Molex 1301470079

    AC Power Plugs & Receptacles PLUG L15-30P 250V WATERTITE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 1301470079 1
    • 1 $87.77
    • 10 $80.57
    • 100 $80.57
    • 1000 $80.57
    • 10000 $80.57
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    23C8100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    23c8100

    Abstract: MX23C8100 MX23C8100MC-10 MX23C8100MC-12 MX23C8100MC-15 MX23C8100PC-10 MX23C8100PC-12 MX23C8100PC-15 MX23C8100TC-10 MX23C8100TC-12
    Text: 23C8100 8M-BIT MASK ROM 8/16 BIT OUTPUT FEATURES ORDER INFORMATION • Bit organization - 1M x 8 (byte mode) - 512K x 16 (word mode) • Fast access time - Random access: 100ns (max.) • Current - Operating: 60mA - Standby: 50uA • Supply voltage - 5V±10%


    Original     		PDF MX23C8100 100ns 500mil) 600mil) MX23C8100PC-10 MX23C8100PC-12 120ns MX23C8100PC-15 150ns 23c8100 MX23C8100 MX23C8100MC-10 MX23C8100MC-12 MX23C8100MC-15 MX23C8100PC-10 MX23C8100PC-12 MX23C8100PC-15 MX23C8100TC-10 MX23C8100TC-12

    atmel 844

    Abstract: 61256 GMS960800B atmel dream sam9713 SRAM 61256 dream sam9713 roland 13X2 la 7632 GMS970800B
    Text: Features • The SAM9713GS Board provides: 1 – – – – High Quality Wavetable Synthesis with 38 Voice Polyphony Compatible Reverb and Chorus Surround Four Band Equalizer Description The SAM9713GS Board demonstrates a typical application of the SAM9713. This is a


    Original     		PDF SAM9713GS SAM9713. SAM9713 PCM1718E GMS960800B® GMS970800BTM GMS960800B GMS970800B. GMS970800B atmel 844 61256 atmel dream sam9713 SRAM 61256 dream sam9713 roland 13X2 la 7632

    61256

    Abstract: atmel 844 13X2 1N4148 ATSAM9713 GMS960800B GMS970800B PCM1718E la 7632
    Text: Features • The ATSAM9713GS Board provides: 1 – – – – High Quality Wavetable Synthesis with 38 Voice Polyphony Compatible Reverb and Chorus Surround Four Band Equalizer Description The ATSAM9713GS Board demonstrates a typical application of the ATSAM9713.


    Original     		PDF ATSAM9713GS ATSAM9713. ATSAM9713 PCM1718E GMS960800B® GMS970800BTM GMS960800B GMS970800BTM, 61256 atmel 844 13X2 1N4148 GMS970800B la 7632

    Untitled

    Abstract: No abstract text available
    Text: 23C8100 8M-BIT MASK ROM 8/16 BIT OUTPUT FEATURES ORDER INFORMATION • Bit organization - 1M x 8 (byte mode) - 512K x 16 (word mode) • Fast access time - Random access: 100ns (max.) • Current - Operating: 60mA - Standby: 50uA • Supply voltage - 5V±10%


    Original     		PDF MX23C8100 100ns 500mil) 600mil) MX23C8100PC-10 100ns MX23C8100PC-12 120ns MX23C8100PC-15 150ns

    61256

    Abstract: SRAM 61256 dream sam9713 61256 SRAM SAM9713 roland sram GMS970800B Roland schematic SOP44 GMS960800B
    Text: 9713GS Reference Design 9713GS BOARD SAM9713 REFERENCE DESIGN 9713GS demonstrates a typical application of SAM9713. This is a Waveblaster compatible board which uses SAM9713 with 512kx16 ROM 8Mbit , 32kx8 SRAM, and a Burr-Brown PCM1718E stereo DAC. The ROM can be of the type GMS960800B (with express permission of Roland corporation, special


    Original     		PDF 9713GS SAM9713 SAM9713. 512kx16 32kx8 PCM1718E GMS960800B 61256 SRAM 61256 dream sam9713 61256 SRAM roland sram GMS970800B Roland schematic SOP44 GMS960800B

    Untitled

    Abstract: No abstract text available
    Text: 23C8100 8M-BIT MASK ROM 8/16 BIT OUTPUT FEATURES ORDER INFORMATION • Bit organization - 1M x 8 (byte mode) - 512K x 16 (word mode) • Fast access time - Random access: 100ns (max.) • Current - Operating: 60mA - Standby: 50uA • Supply voltage - 5V±10%


    Original     		PDF MX23C8100 100ns 500mil) 600mil) MX23C8100PC-10 100ns MX23C8100PC-12 120ns MX23C8100PC-15 150ns

    Untitled

    Abstract: No abstract text available
    Text: 4% G M 23C8100 GoldStar 512Kx 16/IM GOLDSTAR ELECTRON CO., LTD. X 8 BIT CMOS MASK ROM Pin Configuration 42 DIP Top View D escription The 23C8100 high perform ance read only m em ory is organized either as 1,048,576x8 bit (Byte Mode) or as 524,288 x 16 bit (Word M ode|


    OCR Scan     		PDF 23C8100 512Kx 16/IM GM23C8100 576x8 D8-D14 D15/A-1 GM23C8100

    NA-1335

    Abstract: 42-pin D GM23C8100A
    Text: 23C8100A GoldStar GOLDSTAR ELECTRON CO., LTD. 1M x 8/512K x 16 BIT CMOS MASK ROM Description Pin Configuration The GM 23C8100A high performance read only memory is organized either as 1 ,0 4 8 ,5 7 6 x 8 bit Byte Mode or as 524,288 x 16 bit (Word Mode)


    OCR Scan     		PDF GM23C8100A GM23C8100A 8/512K 402A757 NA-1335 42-pin D

    Untitled

    Abstract: No abstract text available
    Text: W» LG Semicon. Co. LTD Description Pin Configuration The 23C8100A high performance read only memory is organized as 1,048,576 x 8 bit Byte Mode or as 524,288 x 16 bit (Word Mode) followed by BHE mode select. The 23C8100A offers automatic power down controlled by


    OCR Scan     		PDF GM23C8100A wjA15 402fl757

    GM23C8100BFW

    Abstract: 23C8100B
    Text: @ LG Semicon. Co. LTD Description The 23C8100B high performance read only memory is organized either as 1,048,576 x 8 byte mode or 524,288 x 16 bits (word mode) and has an access time of 120/15Qns. The 23C8100B offers automatic power down controlled by the mask


    OCR Scan     		PDF GM23C8100B 120/15Qns. IDA14 A0-A18 015/A-l MD2B757 0004fl32 GM23C8100BFW 23C8100B

    MB8316200

    Abstract: uPD23C4000S TC533200 23C4000C UPD23C4000 23C32000a 624116 HN62318/338B
    Text: MEMORY ICS FUNCTION GUIDE 3. CROSS REFERENCE GUIDE Density 4M bit 8M bit Samsung NEC Hitachi Sharp Toshiba Fujitsu K M 23C4000C UPD23C4001EB HN62344B LH534700 TC534000C M B834000A K M 23C4100C UPD23C4000S HN62444 LH534600B TC534200C M B834200A K M 23C 4; OOCET UPD23C4000S


    OCR Scan     		PDF 23C4000C 23C4100C 23C4200C 23V4000C KM23V41 KM23V41OOCET UPD23C4001EB UPD23C4000S HN62344B HN62444 MB8316200 uPD23C4000S TC533200 UPD23C4000 23C32000a 624116 HN62318/338B

    23C8100DG

    Abstract: No abstract text available
    Text: 23C8100D G CMOS MASK ROM 8M-Bit (1Mx8 512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access tim e : 100ns(Max.) • Supply voltage : single +5V • C urrent consumption


    OCR Scan     		PDF KM23C8100D 512Kx16) 100ns KM23C8100D 42-DIP-600 23C8100DG 44-SQP-600 23C8100D KM23C81 42-DIP-600) 23C8100DG

    Untitled

    Abstract: No abstract text available
    Text: M X23C81OO MACftONIX, INC. 8 M - B I T 1 M C x M 8 O / 5 S 1 M S A K S K x R 1 8 O M FEATURES • • • • • Switchable configuration -1 M x 8(byte mode) - 512K x 16(word mode) • Single +5V power supply • Fast access time: 100/120/150/200ns (max)


    OCR Scan     		PDF X23C81OO 100/120/150/200ns MX23C8100 MX23C8100PC-10 MX23C8100MC-10 MX23C8100PC-12 MX23C8100MC-12 MX23C8100PC-15 MX23C8100MC-15 MX23C8100PC-20

    Untitled

    Abstract: No abstract text available
    Text: KM23C81 OOD E T CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,5762 x 8(byte mode) 524,288 x 16(word mode) • Fast access tim e : 100ns(Max.) • Supply voltage : single +5V • Current consumption


    OCR Scan     		PDF KM23C81 /512Kx16) 100ns 8100D 44-TSQ P2-400 23C8100D

    23C8001A

    Abstract: 23C8001 KM23C2001 2001h 23c4001
    Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. 2. 3 4 II. EEPROM DATA SHEETS 1 2 3 4. 5 6. 7. 8. 9. 10 11. 12 13. 14. III. In tro d u ctio n. v -. 11 Product G uide. \ . 28


    OCR Scan     		PDF 32000G 32000FP. 23C32100G 32100FP 23C8001A 23C8001 KM23C2001 2001h 23c4001

    Untitled

    Abstract: No abstract text available
    Text: CMOS MASK ROM 23C8100FP2 8M-BH 1M X 8 /5 1 2K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode) • Fast access time: 150ns (max.) • Supply voltage: single + 5V • Current consumption


    OCR Scan     		PDF KM23C8100FP2 150ns 64-pin KM23C81OOFP2 KM23C8100FP2)

    Untitled

    Abstract: No abstract text available
    Text: CMOS MASK ROM KM23C81 OOD G 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access tim e : 100ns(Max.) • Supply voltage : single +5V • Current consumption


    OCR Scan     		PDF KM23C81 /512Kx16) 100ns 23C8100D 42-DIP-600 23C8100DG 44-SQP-600 23C8100D

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC 4EE D B 7^4142 23C8100 GDlllb? 3 B S M 6 K CMOS MASK ROM 8M-Bit 1M X 8 /5 12K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode) • Fast access time: 150ns (max.)


    OCR Scan     		PDF KM23C8100 150ns 42-pin, 44-pin, KM23C8100

    Untitled

    Abstract: No abstract text available
    Text: 23C8100 MXIC 8M-Bit Mask ROM 8/16 Bit Output FEATURES ORDER INFORMATION Part No. Access Time Package 23C8100MC-10 100ns 44 pin SOP 23C8100MC-12 120ns 44 pin SOP 23C8100MC-15 150ns 44 pin SOP 23C8100PC-10 100ns 42 pin DIP Standby: 50nA 23C8100PC-12


    OCR Scan     		PDF MX23C8100 MX23C8100MC-10 100ns MX23C8100MC-12 120ns MX23C8100MC-15 150ns MX23C8100PC-10 MX23C8100PC-12

    Untitled

    Abstract: No abstract text available
    Text: MACRONIX IN C 5 3 E ]> ¿ b a a a a e □ □ a 3 t.fi h s i • P1ACX f j - i s - IV l JC „ M X23 C 8 10 0 M ACPO NIX, INC. B M a r n i M x b / b i c k x is CMOS MASK ROM FEATURES • Switchable configuration - 1Mx8 byte mode) - 512K x 16(word mode) • Single +5V power supply


    OCR Scan     		PDF MX23C8100 120/150/200ns 44-PIN

    Untitled

    Abstract: No abstract text available
    Text: 23C8100A LG Semicon Co.,Ltd. IM x 8 / 512K x 16 B IT C M O S M A SK R O M Pin Configuration Description The G M 28C 8100A high perform ance read only m em ory is organized as 1,048,576 x 8 bit Byte M ode o r as 524,288 x 16 bit (W ord M ode) follow ed by B H E m ode select. The


    OCR Scan     		PDF GM23C8100A

    Untitled

    Abstract: No abstract text available
    Text: SAM S UN G E L E C T R O N I C S INC 45E 1 7^4142 23C8100FP1 0011171 S CMOS MASK ROM ÒM-Bit 1M X 8 / 5 1 2 K X 16) CMOS MASK ROM FEATURES S witchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode) Fast access time: 150ns (max.) Supply voltage: single + 5V


    OCR Scan     		PDF KM23C8100FP1 150ns 44-pin 8100FP DG11174. 23C8100FP1)

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC 42E D m 71b4m 2 23C8100FP2 DD1117S 5 HISN6K CMOS MASK ROM T ^ fc -lV lS 8M-BH 1M X 8 /5 12K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode) • Fast access time: 150ns (max.)


    OCR Scan     		PDF 71b4m KM23C8100FP2 DD1117S 150ns 64-pin 3fe414E 23C8100FP2)

    PE 8001A

    Abstract: 23C1001 KM41C256P 23C1010 KM41C464P KM68512 km41c256 TFK 805 TFK 001
    Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM C apacity 256K bit 1M bit O rganization Speed ns T e ch n ology KM41C256P 255K X 1 70/80/100 CMOS Fast Page 16 Pm DIP Now KM41C256J 256 K X 1 70/80/100 CMOS Fast Page 16 Pm PLCC Now KM41C256Z 256Kx 1


    OCR Scan     		PDF KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C464P PE 8001A 23C1001 23C1010 KM68512 km41c256 TFK 805 TFK 001