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    KM23C8100 Search Results

    KM23C8100 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Type PDF
    KM23C8100D-12 Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF
    KM23C8100D-15 Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF
    KM23C8100DET-10 Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF
    KM23C8100DET-12 Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF
    KM23C8100DET-15 Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF
    KM23C8100DG-10 Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF
    KM23C8100DG-12 Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF
    KM23C8100DG-15 Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF
    KM23C8100DT-10 Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF
    KM23C8100DT-12 Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF
    KM23C8100DT-15 Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: KM23C8100D E T CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,5762 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +5V • Current consumption


    Original     		PDF KM23C8100D /512Kx16) 100ns 44-TSOP2-400 44-TSOP2-400)

    sop34

    Abstract: No abstract text available
    Text: KM23C8100D G CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +5V • Current consumption


    Original     		PDF KM23C8100D /512Kx16) 100ns KM23C8100D 42-DIP-600 KM23C8100DG 44-SOP-600 200MAX sop34

    T-15

    Abstract: No abstract text available
    Text: KM23C8100D E T CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,5762 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +5V • Current consumption


    Original     		PDF KM23C8100D /512Kx16) 100ns 44-TSOP2-400 T-15

    44-TSOP2-400

    Abstract: T-15 44-TSOP2
    Text: KM23C8100D E T CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,5762 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +5V • Current consumption


    Original     		PDF KM23C8100D /512Kx16) 100ns 44-TSOP2-400 44-TSOP2-400 T-15 44-TSOP2

    Untitled

    Abstract: No abstract text available
    Text: KM23C8100D G CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +5V • Current consumption


    Original     		PDF KM23C8100D /512Kx16) 100ns KM23C8100D 42-DIP-600 KM23C8100DG 44-SOP-600

    23C8100DG

    Abstract: No abstract text available
    Text: KM23C8100D G CMOS MASK ROM 8M-Bit (1Mx8 512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access tim e : 100ns(Max.) • Supply voltage : single +5V • C urrent consumption


    OCR Scan     		PDF KM23C8100D 512Kx16) 100ns KM23C8100D 42-DIP-600 23C8100DG 44-SQP-600 23C8100D KM23C81 42-DIP-600) 23C8100DG

    E5ex

    Abstract: No abstract text available
    Text: KM23C8100CET CMOS Mask ROM ELECTRONICS 8M-Bit 1 M X 8/512 K x 16 M-ROM(Extended Temperature Product) • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16(word mode) • Fast access time : 120ns(max.) • Supply voltage : single +5V • Current consumption


    OCR Scan     		PDF KM23C8100CET 120ns 44-TSQP2-400 KM23C8100CET 576x8bit 288x16bit KM23C8100CET) E5ex

    Untitled

    Abstract: No abstract text available
    Text: KM23C8100AFP2 CMOS MASK ROM 8M-Bit 1M X 8 /5 1 2 K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w itc h a b le o rg a n iza tio n 1 ,0 4 8 ,5 7 6 x 8 (b y te m o d e ) The KM23C8100AFP2 is a fully static mask programma­ ble ROM fabricated using silicon gate CMOS process


    OCR Scan     		PDF KM23C8100AFP2 KM23C8100AFP2 150ns KM23C8100AFP2)

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS MASK ROM KM23C8100H 8M-Bit 1M X 8 /5 1 2 K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode) • Fast access time: 100ns (max.) • Supply voltage: single + 5 V


    OCR Scan     		PDF KM23C8100H 100ns 42-pin, 44-pin, KM23C8100H KM23C8100H) KM23C8100HG)

    Untitled

    Abstract: No abstract text available
    Text: CMOS MASK ROM KM23C8100FP2 8M-BH 1M X 8 /5 1 2K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode) • Fast access time: 150ns (max.) • Supply voltage: single + 5V • Current consumption


    OCR Scan     		PDF KM23C8100FP2 150ns 64-pin KM23C81OOFP2 KM23C8100FP2)

    Untitled

    Abstract: No abstract text available
    Text: KM23C8100AFP1 CMOS MASK ROM 8M-BH 1M X 8 /5 1 2K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w itc h a b le o rg a n iza tio n The KM23C8100AFP1 is a fully static mask programma­ ble ROM fabricated using silicon gate CMOS process technology, and is organized either as 1 ,0 4 8 ,5 7 6 X 8 bit


    OCR Scan     		PDF KM23C8100AFP1 KM23C8100AFP1 KM23C8100AFP1)

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC 4EE D B 7^4142 KM23C8100 GDlllb? 3 B S M 6 K CMOS MASK ROM 8M-Bit 1M X 8 /5 12K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode) • Fast access time: 150ns (max.)


    OCR Scan     		PDF KM23C8100 150ns 42-pin, 44-pin, KM23C8100

    Untitled

    Abstract: No abstract text available
    Text: KM23C8100FP1 CMOS MASK ROM 8M-Bit 1M X 8 /5 1 2K X 16 CMOS MASK ROM FEATURES Sw itchable organization 1,048,576 X B (byte mode) 524,288 x 16 (word mode) Fast access time: 150ns (max.) Supply voltage: single + 5V C urrent consumption O perating: 50m A (max.)


    OCR Scan     		PDF KM23C8100FP1 150ns 44-pin KM23C8100FP1 KM23C8100FP1)

    Untitled

    Abstract: No abstract text available
    Text: KM23C8100A CMOS MASK ROM 8M-Bit 1M X 8 /5 1 2K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1 ,0 4 8 ,5 7 6 x 8 (byte mode) 524,288 x 16 (word mode) • Fast access time: 150ns (max.) • Supply voltage: single + 5V • C urrent consumption


    OCR Scan     		PDF KM23C8100A 150ns 42-pin, 44-pin, KM23C01OOA KM23C8100A) KM23C8100AG)

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM23C8100HFP2 ^ CMOS MASK ROM 8M-Bit 1M X 8 /5 1 2 K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w itchable organization 1,048,576 X 6 (byte mode) 524,288 X 16 (word mode) • Fast access time: 100ns (max.) • Supply voltage: single + 5V


    OCR Scan     		PDF KM23C8100HFP2 100ns 64-pin KM23C8100HFP2 KM23C81OOH KM23C8100HFP2)

    Untitled

    Abstract: No abstract text available
    Text: SAM S UN G E L E C T R O N I C S INC 45E 1 7^4142 KM23C8100FP1 0011171 S CMOS MASK ROM ÒM-Bit 1M X 8 / 5 1 2 K X 16) CMOS MASK ROM FEATURES S witchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode) Fast access time: 150ns (max.) Supply voltage: single + 5V


    OCR Scan     		PDF KM23C8100FP1 150ns 44-pin 8100FP DG11174. 23C8100FP1)

    Untitled

    Abstract: No abstract text available
    Text: CMOS MASK ROM KM23C8100A 8M-Bit 1M X 8 /5 1 2 K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w itc h a b le o rg a n iz a tio n The KM23C8100A is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 1 ,0 4 8 ,5 7 6 X 8 bit


    OCR Scan     		PDF KM23C8100A KM23C8100A 50piA KM23C8100A) KM23C8100AG)

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC 42E D m 71b4m 2 KM23C8100FP2 DD1117S 5 HISN6K CMOS MASK ROM T ^ fc -lV lS 8M-BH 1M X 8 /5 12K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode) • Fast access time: 150ns (max.)


    OCR Scan     		PDF 71b4m KM23C8100FP2 DD1117S 150ns 64-pin 3fe414E 23C8100FP2)

    FA5A

    Abstract: No abstract text available
    Text: PRELIMINARY KM23C8100H CMOS MASK ROM 8M-Bit 1M X 8 /5 1 2 K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Swilchable organization 1,048,576 x B (byte mode) 524,288 x 16 (word mode) • Fast access time: 100ns (max.) • Supply voltage: single + 5V


    OCR Scan     		PDF KM23C8100H 100ns 42-pin, 44-pin, KM23C8100H Si58Sr KM23C8100H) KM23C8100HG) FA5A

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM23C8100HFP1 CMOS MASK ROM 8M-Bit 1M X 8 /5 1 2 K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode) • Fast access time: 100ns (max.) • Supply voltage: single 5V


    OCR Scan     		PDF KM23C8100HFP1 100ns 44-pin KM23C8100HFP1 KM23C8100HFP1)

    Untitled

    Abstract: No abstract text available
    Text: KM23C8100AFP1 CMOS MASK ROM 8M-Bit 1M X 8 /5 1 2K X 16 CMOS MASK ROM FEATURES • S w itc h a b le o rg a n iz a tio n 1 ,0 4 8 ,5 7 6 x 8 (b y te m o d e ) 5 2 4 ,2 8 8 x 16 (w o rd m o d e ) • F a s t a c c e s s tim e : 150 n s im a x ) • S u p p ly v o lta g e : s in g le *t-5V


    OCR Scan     		PDF KM23C8100AFP1 23C8100AFP1 B100AFP1-20 KM23C8100AFH-25 KM23C8100AFP1)

    KM23C81

    Abstract: No abstract text available
    Text: KM23C8100 CMOS MASK ROM 8M-Bit 1M X 8 /5 1 2K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 5 2 4 ,2 8 8 x 1 6 (word mode) • Fast access time: 150ns (max.) • Supply voltage: single + 5V • Current consumption


    OCR Scan     		PDF KM23C8100 150ns 50jjA 42-pin, 44-pin, KM23C8100) KM23C8100G) KM23C81

    Untitled

    Abstract: No abstract text available
    Text: KM23C8100AFP2 CMOS MASK ROM 8M-Bit 1M X 8 /5 1 2 K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w itc h a b le o rg a n iza tio n The KM23C8100AFP2 is a fully sta tic mask program m a­ ble ROM fab ricate d using s ilic o n gate CMOS process technology, and is organized either as 1 ,0 4 8 ,5 7 6 X 8 bit


    OCR Scan     		PDF KM23C8100AFP2 KM23C8100AFP2 KM23C8100AFP2)

    c3s3

    Abstract: 23c8100
    Text: KM23C8100D G CMOS MASK ROM 8M-Bit (1Mx8 /512KX16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1.040.576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +5V • Current consumption


    OCR Scan     		PDF KM23C8100D /512KX16) 100ns KM23C8100D 42-DIP-600 KM23C8100DG 44-SOP-6QO KM23C81 100pF c3s3 23c8100