GM23C8100BFW
Abstract: 23C8100B
Text: @ LG Semicon. Co. LTD Description The GM23C8100B high performance read only memory is organized either as 1,048,576 x 8 byte mode or 524,288 x 16 bits (word mode) and has an access time of 120/15Qns. The GM23C8100B offers automatic power down controlled by the mask
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GM23C8100B
120/15Qns.
IDA14
A0-A18
015/A-l
MD2B757
0004fl32
GM23C8100BFW
23C8100B
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gm16c450
Abstract: GM82C50A C50A GD43C gm82C AXH marking
Text: G M 1 6 C 4 5 0 /8 2 C 5 0 A ASYNCHRONOUS COMMUNICATIONS ELEMENT General Description Features The GM16C450 is an improved specification version of the GM82C50A Asynchronous Communications Ele ment ACE . The improved specifications ensure com patibility with state-of-the-art CPUs. Functionally, the
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M16C450/82C50A
GM16C450
GM82C50A
GM82C5QA.
DDD43TÃ
C50A
GD43C
gm82C
AXH marking
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GM71C16400AR-7
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD Description Pin Configuration The GM71C16400A is the new generation dynamic RAM organized 4,194,304 x 4 Bit. GM71C16400A has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The GM71C16400A offers Fast
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GM71C16400A
GM71C16400AR-7
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GM71C4263
Abstract: GM71C4
Text: @ LG Semicon. Co. LTD. Description Features The GM71C S 4263D/DL is the new generation dynamic RAM organized 262,144 words x 16 bit. GM71C(S)4263D/DL has realized higher density, higher performance and various functions by utilizing advanced CMOS process tech n o lo g y . The
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4263D/DL
GM71C
Q0D53b4
00D53b5
GM71C4263
GM71C4
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