Untitled
Abstract: No abstract text available
Text: ECO-05-000377 LCP 21MAR05 L.Z I.E
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ECO-05-000377
21MAR05
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DG2011
Abstract: DG2011DX-T1 HP4192A SC-89
Text: DG2011 Vishay Siliconix Low-Voltage, Low rON, Single SPDT Analog Switch In SC-89 Package FEATURES BENEFITS D Low Voltage Operation 1.8 V to 5.5 V D Low On-Resistance - rON: 1.8 W @ 2.7 V D Low Charge Injection D Low Voltage Logic Compatible D SC-89 Package (1.6 x 1.6 mm)
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DG2011
SC-89
DG2011
HP4192A
S-50509--Rev.
21-Mar-05
DG2011DX-T1
HP4192A
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Si2321DS
Abstract: No abstract text available
Text: SPICE Device Model Si2321DS Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si2321DS
18-Jul-08
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Si3447BDV
Abstract: No abstract text available
Text: SPICE Device Model Si3447BDV Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si3447BDV
18-Jul-08
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Si7302DN
Abstract: No abstract text available
Text: SPICE Device Model Si7302DN Vishay Siliconix N-Channel 220-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7302DN
18-Jul-08
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Si3443DV
Abstract: 70-904
Text: SPICE Device Model Si3443DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si3443DV
18-Jul-08
70-904
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Si3442BDV
Abstract: No abstract text available
Text: SPICE Device Model Si3442BDV Vishay Siliconix N-Channel 2.5-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si3442BDV
18-Jul-08
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Si2306DS
Abstract: No abstract text available
Text: SPICE Device Model Si2306DS Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si2306DS
S-50383Rev.
21-Mar-05
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Si3445DV
Abstract: No abstract text available
Text: SPICE Device Model Si3445DV Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si3445DV
S-50383Rev.
21-Mar-05
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SI2308DS
Abstract: Si2308DS SPICE Device Model 70902
Text: SPICE Device Model Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si2308DS
S-50383Rev.
21-Mar-05
Si2308DS SPICE Device Model
70902
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Untitled
Abstract: No abstract text available
Text: Si7403BDN New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) −20 FEATURES rDS(on) (W) ID (A) 0.074 @ VGS = −4.5 V −8c 0.110 @ VGS = −2.5 V −7.4 Qg (Typ) 5 6 nC 5.6 D TrenchFETr Power MOSFET: 2.5-V Rated D RoHS Compliant
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Si7403BDN
07-mm
Si7403BDN-T1--E3
18-Jul-08
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DG3537DB-T5-E1
Abstract: No abstract text available
Text: DG3537/3538/3539/3540 Vishay Siliconix New Product 4-W, 360-MHz, Dual SPST Analog Switches FEATURES D D D D D D Termination 1.8-V to 5.5-V Operation is Pb-free 3-W @ 2.7-V rON 360-MHz Bandwidth ESD Method 3015.7 >2 kV Latch-Up Current .300 mA JESD 78 1.6-V Logic Compatible
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DG3537/3538/3539/3540
360-MHz,
360-MHz
DG3537/3538/3539/3540
S-50480--Rev.
21-Mar-05
DG3537DB-T5-E1
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Untitled
Abstract: No abstract text available
Text: Si7668ADP New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) FEATURES ID rDS(on) (W) 30 (A)a 0.003 @ VGS = 10 V 40 0.0034 @ VGS = 4.5 V 32 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) 52 nC Termination is Pb-free APPLICATIONS
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Si7668ADP
Si7668ADP-T1--E3
08-Apr-05
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Si3442BDV
Abstract: No abstract text available
Text: SPICE Device Model Si3442BDV Vishay Siliconix N-Channel 2.5-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si3442BDV
S-50383Rev.
21-Mar-05
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Si3434DV
Abstract: si3434 71652 61A18
Text: SPICE Device Model Si3434DV Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si3434DV
S-50383Rev.
21-Mar-05
si3434
71652
61A18
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Si3455ADV
Abstract: No abstract text available
Text: SPICE Device Model Si3455ADV Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si3455ADV
S-50383Rev.
21-Mar-05
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Untitled
Abstract: No abstract text available
Text: Si7148DP New Product Vishay Siliconix N-Channel 75-V D-S MOSFET PRODUCT SUMMARY VDS (V) FEATURES ID rDS(on) (W) 75 (A)a 0.011 @ VGS = 10 V 28 0.0145 @ VGS = 4.5 V 28 D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant Qg (Typ) 33 nC Product Is Completely
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Si7148DP
Si7148DP-T1--E3
18-Jul-08
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72555
Abstract: Si3440DV
Text: SPICE Device Model Si3440DV Vishay Siliconix N-Channel 150-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si3440DV
18-Jul-08
72555
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Si3443BDV
Abstract: 7276 72766 SI3443
Text: SPICE Device Model Si3443BDV Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si3443BDV
18-Jul-08
7276
72766
SI3443
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Si3459DV
Abstract: No abstract text available
Text: SPICE Device Model Si3459DV Vishay Siliconix P-Channel 60-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si3459DV
18-Jul-08
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Si2328DS
Abstract: No abstract text available
Text: SPICE Device Model Si2328DS Vishay Siliconix N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si2328DS
18-Jul-08
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Si2333DS
Abstract: No abstract text available
Text: SPICE Device Model Si2333DS Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si2333DS
18-Jul-08
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Si2319DS
Abstract: No abstract text available
Text: SPICE Device Model Si2319DS Vishay Siliconix P-Channel 40-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si2319DS
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: 7 THIS DRAWING IS UNPUBLISHED. GU COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 6 5 4 2 3 - ALL RIGHTS RESERVED. LOC DIST AD 00 REVISIONS P LTR DESCRIPTION B B1 C ROW Y TYP AT POST 1 6.05 [.238] Id I d 3. 05 + 0 .3 8 [•1 20 + .01 5]
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21MAR05
12SEP09
20JUL05
31MAR2000
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